# Power MOSFET, N Channel, 40 V, 160 A, 3700 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1813387/)

**URL**: https://novapart.co/products/AUIRF1404Z/power-mosfet-n-channel-40-v-160-a-3700-ohm-to
**SKU**: AUIRF1404Z
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.6500
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0027ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 3700µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1813387/)

AUIRF1404Z AUIRF1404ZS **AUTOMOTIVE GRADE** AUIRF1404ZL ~~a~~ 

## ~~Cinfineon~~ 

HEXFET[® ] Power MOSFET 

## **Features** 

|**Features**||||||HEXFET[® ]Power MOSFET|
|---|---|---|---|---|---|---|
|Advanced Process Technology<br>Ultra Low On-Resistance<br>175°C Operating Temperature||||**VDSS**<br>**RDS(on)   max.**||**40V**<br>**max.**<br>**3.7m**|
|Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax<br>Lead-Free, RoHS Compliant||||**ID (Silicon Limited)**<br>**180A**<br>**ID (Package Limited)**<br>**160A**|||
|Automotive Qualified *|||||||
|**Description**||||||D<br>D|
|Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to<br>achieve extremely low on-resistance per silicon area.  Additional||||S<br>D<br>G||S<br>G<br>S<br>GD|
|features of this design  are a 175°C junction operating temperature,<br>fast switching speed and improved repetitive avalanche rating .||||TO-220AB<br>AUIRF1404Z||D2Pak<br>AUIRF1404ZS<br>TO-262<br>AUIRF1404ZL|
|These features combine to make this design an extremely efficient<br>and reliable device for use in Automotive applications and a wide<br>variety of other applications.<br>**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>**G**<br>Gate<br>~~a~~||||||**Orderable Part Number**<br>**D**<br>**S**<br>Drain<br>Source|
|AUIRF1404Z<br>TO-220<br>Tube||||50||AUIRF1404Z|
|AUIRF1404ZL<br>TO-262<br>Tube||||50||AUIRF1404ZL|
|AUIRF1404ZS<br>D2-Pak<br>Tube<br>Tape and Reel Left||||50<br>800||AUIRF1404ZS<br>AUIRF1404ZSTRL|



- Advanced Process Technology 

- Ultra Low On-Resistance 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|otherwise specified.||||
|---|---|---|---|
|**Symbol**<br>~~———————————~~|**Parameter**<br>~~———————————~~|**Max.**<br>~~ae~~|**Units**<br>~~ae~~|
|ID @TC= 25°C<br>~~———————————~~|ContinuousDrainCurrent,VGS @10V(Silicon Limited)<br>~~———————————~~|180<br>~~ae~~|A<br>~~ae~~|
|ID @TC= 100°C<br>~~———————————~~|ContinuousDrainCurrent,VGS @10V(Silicon Limited)<br>~~———————————~~|120<br>~~ae~~||
|ID@ TC= 25°C<br>~~———————————~~|Continuous Drain Current, VGS@ 10V (Package Limited)<br>~~———————————~~|160<br>~~ae~~||
|IDM<br>~~———————————~~|PulsedDrainCurrent <br>~~———————————~~|710<br>~~ae~~||
|PD @TC= 25°C<br>~~———————————~~<br>~~———————~~|Maximum Power Dissipation<br>~~———————————~~<br>~~———————~~|200<br>~~ae~~<br>~~ee~~|W<br>~~ae~~<br>~~ee~~|
|~~———————~~|Linear DeratingFactor<br>~~———————~~|1.3<br>~~ee~~|W/°C<br>~~ee~~|
|VGS<br>~~———————~~|Gate-to-SourceVoltage<br>~~———————~~|±20<br>~~ee~~|V<br>~~ee~~|
|EAS<br>~~———————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~———————~~|330<br>~~ee~~|mJ<br>~~ee~~|
|EAS(tested)<br>~~———————~~|SinglePulseAvalancheEnergyTestedValue <br>~~———————~~|480<br>~~ee~~||
|IAR<br>~~———————~~<br>~~a~~|Avalanche Current <br>~~———————~~<br>~~a~~|See Fig.15,16, 12a, 12b<br>~~ee ~~<br>~~a~~|A<br> ~~ee~~<br>~~a~~|
|EAR<br>~~a~~|RepetitiveAvalancheEnergy <br>~~a~~||mJ<br>~~a~~|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~ee~~|°C<br>~~ee~~|
|~~ee~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~ee~~|300<br>~~ee~~||
|~~ee~~|Mountingtorque,6-32 or M3 screw<br>~~ee~~|10 lbf•in(1.1N•m)<br> <br>~~ee~~|~~ee~~|



HEXFET® is a registered trademark of Infineon. 

***** Qualification standards can be found at www.infineon.com 

1 

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AUIRF1404Z/S/L 

**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~ee~~|Total Gate Charge|–––|100|150|nC|ID= 75A<br>VDS= 32V<br>VGS= 10V|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~ee~~<br>~~es~~|Gate-to-Source Charge|–––|31|–––|||
|Qgd<br>~~es~~|Gate-to-Drain Charge|–––|42|–––|||
|gd<br>td(on)<br>~~es~~<br>~~es~~|Turn-On Delay Time|–––|18|–––|ns|VDD= 20V<br>ID= 75A<br>RG= 3.0<br>VGS= 10V<br>~~ee:~~|
|d(on)<br>tr<br>~~es~~<br>~~ee~~|RiseTime|–––|110|–––|||
|td(off)<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-Off DelayTime<br>|–––<br>|36|–––|||
|d(off)<br>tf<br>~~ee~~<br>~~eeSSS~~|Fall Time<br>~~SSS~~|–––<br>~~SSS~~|58|–––|||
|LD<br>~~eeSSS~~|Internal Drain Inductance<br>~~SSS~~|–––<br>~~SSS~~|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee:~~<br>~~ee~~|
|LS<br>~~SSS~~<br>~~a~~|Internal Source Inductance<br>~~SSS~~|–––<br>~~SSS~~|7.5|–––|||
|Ciss<br>~~SSS~~<br>~~a~~<br>~~rae~~|Input Capacitance<br>~~SSS~~<br>~~rae~~|–––<br>~~SSS~~<br>~~rae~~|4340<br>~~rae~~|–––<br>~~rae~~|pF<br>~~rae~~<br> rs|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ee:~~<br>~~ee~~|
|Coss<br>~~a~~<br>~~Ge~~<br>~~rae~~|Output Capacitance<br>~~Ge~~<br>~~rae~~|–––<br>~~Ge~~<br>~~rae~~|1030<br>~~Ge~~<br>~~rae~~|–––<br>~~Ge~~<br>~~rae~~|||
|Crss<br>~~a~~<br>~~rae~~<br>~~GO~~|ReverseTransferCapacitance<br>~~rae~~<br>~~GO~~|–––<br>~~rae~~<br>~~GO~~|550<br>~~rae~~<br>~~GO~~|–––<br>~~rae~~<br>~~GO~~|||
|Coss<br>~~a~~<br>~~rae~~<br>~~GO~~|Output Capacitance<br>~~rae~~<br>~~GO~~|–––<br>~~rae~~<br>~~GO~~|3300<br>~~rae~~<br>~~GO~~|–––<br>~~rae~~<br>~~GO~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~ee~~|
|Coss<br>~~rae~~<br>~~GO~~<br>~~OO~~|Output Capacitance<br>~~rae~~<br>~~GO~~<br>~~OO~~|–––<br>~~rae~~<br>~~GO~~<br>~~OO~~|920<br>~~rae~~<br>~~GO~~<br>~~OO~~|–––<br>~~rae~~<br>~~GO ~~<br>~~OO~~||VGS =0V, VDS =32V ƒ=1.0MHz|
|Coss eff.<br>~~rae~~<br>~~a~~|Effective Output Capacitance<br>~~rae~~<br>~~DG~~|–––<br>~~rae~~<br>~~DG~~|1350<br>~~rae~~<br>~~DG~~|–––<br>~~rae~~<br>~~DG~~||VGS=0V,VDS=0Vto 32V|
|**Diode Characteristics**<br>~~rae~~<br>~~a DG~~<br>~~po~~|||||||
|~~po4,7),~~|**Parameter **<br>~~4,7),~~|**Min.**<br>~~4,7),~~|**Typ. M**<br>~~4,7),~~|**. Max.**<br>~~4,7),~~|**Units**<br>~~4,7),~~|**Conditions**<br>~~4,7),~~<br>~~&~~|
|IS<br>~~po4,7),~~|Continuous Source Current<br>(Body Diode)<br>~~4,7),~~|–––<br>~~4,7),~~|–––<br>~~4,7),~~|160<br>~~4,7),~~|A<br>~~4,7),~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~4,7),~~<br>~~&~~|
|ISM<br>~~4,7),~~|Pulsed Source Current<br>(Body Diode)<br>~~4,7),~~|–––<br>~~4,7),~~<br>~~GD~~|–––<br>~~4,7),~~<br>~~GD~~|750<br>~~4,7),~~<br>~~GD~~|||
|VSD<br>~~4,7),~~<br>~~ee~~<br>~~ss~~|Diode Forward Voltage<br>~~4,7),~~<br>~~ee~~<br>~~ss~~|–––<br>~~4,7),~~<br>~~ee~~<br>~~GD~~<br>~~ss~~|–––<br>~~4,7),~~<br>~~ee~~<br>~~GD~~<br>~~ss~~|1.3<br>~~4,7),~~<br>~~ee~~<br>~~GD~~<br>~~ss~~|V<br>~~4,7),~~<br>~~ee~~<br>~~HiT~~|TJ =25°C,IS=75A,VGS =0V<br>~~4,7),~~<br>~~&~~<br>~~ee~~<br>~~HiT~~|
|trr<br>~~ee~~<br>~~ss~~<br>~~ee~~|Reverse Recovery Time<br>~~ee~~<br>~~ss~~|–––<br>~~ee~~<br>~~GD~~<br>~~ss~~|28<br>~~ee~~<br>~~GD~~<br>~~ss~~|42<br>~~ee~~<br>~~GD~~<br>~~ss~~|ns<br>~~ee~~<br>~~HiT~~|TJ= 25°C ,IF= 75A, VDD= 20V<br>nC   di/dt = 100A/µs<br>~~ee~~<br>~~HiT~~|
|Qrr<br>~~ss~~<br>~~ee~~|Reverse RecoveryCharge<br>~~ss~~|–––<br>~~ss~~|34<br>~~ss~~|51<br>~~ss~~|nC   di/dt = 100A/<br>~~HiT~~||
|ton<br>~~ss~~<br>~~ee~~|Forward Turn-On Time<br>~~ss~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~ss HiT~~|||||



**Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

-  Limited by TJmax, starting  TJ = 25°C, L = 0.11mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.  Pulse width 1.0ms; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

-  This value determined from sample failure population, starting TJ = 25°C, L = 0.11mH, RG = 25, IAS = 75A, VGS =10V. 

-  This is only applied to TO-220AB pakcage. 

-  This is applied to D[2] Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

-  TO-220 device will have an Rth value of 0.65°C/W. 

-  R is measured at TJ approximately 90°C. 

- Calculated continuous current based on maximum allowable junction temperature. Package limitation current limit is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

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1000 

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**----- Start of picture text -----**<br>
1000<br>            VGS              VGS<br> TOP          15V   TOP          15V<br>                   10V                     10V<br>                 8.0V                   8.0V<br>100                    7.0V                     7.0V<br>                   6.0V                     6.0V<br>                   5.5V                     5.5V<br>Zeon                    5.0V                     5.0V  Vga<br>BOTTOM   4.5V  BOTTOM   4.5V<br>10 100<br>1 4.5V<br>aa |  ee<br>4.5V<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>0.1 at Tj = 25°C et 10 a Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>200<br>1000<br>TJ = 25°C TJ = 175°C<br>T J  = 175°C 160<br>a CTE<br>100<br>120<br>TJ = 25°C<br>80<br>ALLL fo<br>10<br>| 40 po<br>VDS = 15V<br>V DS  = 15V 20µs PULSE WIDTH<br>20µs PULSE WIDTH 0 Ann<br>1 ALLEL |<br>0 40 80 120 160<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>A)<br><br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Typical Forward Trans conductance vs. Drain Current 

3 2015-11-11 ~~ET”.|.0..DCCOCC°° TT~~ 

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AUIRF1404Z/S/L ~~Fo~~ 

## ~~Cinfineon~~ 

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8000 20<br>VGS   = 0V,       f = 1 MHZ ID= 75A<br>Ciss    = Cgs  + Cgd,  Cds  SHORTED VDS= 32V<br>Crss    = Cgd  16 VDS= 20V<br>6000 C oss   = C ds  + C gd<br>ee 12 ee<br>Ciss<br>4000<br>8<br>et A<br>2000<br>Coss 4<br>SC TT Aan<br>Crss<br>0 ST 0 Zo<br>1 10 100 0 40 80 120 160<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 TJ = 175 ° C 1000<br>10.0 ae 100<br>TJ = 25°C 100µsec<br>1.0 10 1msec<br>Tc = 25°C<br>Tj = 175°C<br>0.1 ft VGS = 0V 1 Single Pulse 10msec<br>0.2 0.6 1.0 1.4 1.8 0 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode **Fig 8.** Maximum Safe Operating Area Forward Voltage 4 2015-11-11 ~~re~~ 

AUIRF1404Z/S/L 

**==> picture [206 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>Limited By Package<br>150<br>et}<br>100<br>ce}<br>50<br>cee<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.0<br>ID = 75A<br>V GS  = 10V<br>LI<br>1.5<br>TTITAATL<br>1.0<br>HARTIif<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Normalized On-Resistance vs. Temperature 

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**----- Start of picture text -----**<br>
1<br>D = 0.50<br>0.20<br>0.1<br>0.10<br>at<br>jiaeoe<br>0.05<br>0.02<br>0.01 eel 0.01 |  OA<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>ail ear I<br>t1 , Rectangular Pulse Duration (sec)<br> thJC )<br>Thermal Response ( Z<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- - [V][DD]<br>IAS<br>20V<br>B tp 0.01 ib,  |<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>IAS W]<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**Fig 12b.** Unclamped Inductive Waveforms 

**==> picture [194 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>N YT<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 13a.** Gate Charge Waveform 

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600<br>               ID<br> TOP            31A<br>                     53A<br>500400 Lam BOTTOM     75A<br>300 RAKE|<br>200<br>BNNSEE<br>100<br>0<br>25 PCT 50 75  ISSS 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c. Ba  Maximum Avalanche Energy  NNEE<br> vs. Drain Current<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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4.0<br>ID = 250µA<br>3.0<br>2.0<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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10000<br>Allowed avalanche Current vs<br>1000 a Duty Cycle = Single Pulse avalanche  eee pulsewidth,  tav<br>assuming  Tj = 25°C due to<br>avalanche losses. Note: In no<br>case should Tj be allowed to<br>0.01 exceed Tjmax<br>100 Toai |<br>0.05<br>Seat 0.10 eeeEN metreai, SO<br>10 SAT)<br>1<br>1.0E-08 1.0E-07 1.0E-06 ATE 1.0E-05 AE 1.0E-04 Tis 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs. Pulse width<br>400<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>(For further info, see AN-1005 at www.infineon.com)<br>BOTTOM   10% Duty Cycle<br>ID = 75A 1. Avalanche failures assumption:<br>300 oT Purely a thermal phenomenon and failure occurs at a temperature far in<br>excess of Tjmax. This is validated for every part type. jmax. This is validated for every part type. . This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded.<br>NTT 3.  Equation below based on circuit and waveforms shown in Figures 12a, 12b.<br>200<br>4.  PD (ave) = Average power dissipation per single avalanche pulse.<br>5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>I<br>during avalanche).<br>6.  Iav = Allowable avalanche current.<br>100<br>7.  T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>25°C in Figure 15, 16).<br>ONT<br>tav = Average time in avalanche.<br>LTS D = Duty cycle in avalanche =  tav ·f<br>0<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) =  = 1/2 ( 1.3·BV·Iav) = av) = ) =   T/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. jmax. This is validated for every part type. . This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 15, 16). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) =  = 1/2 ( 1.3·BV·Iav) = av) = ) =**  **T/ ZthJCthJC Iav = 2**  **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

2015-11-11 

7 

~~Cinfineon~~ 

AUIRF1404Z/S/L ~~pe~~ 

**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

**==> picture [331 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUIRF1404Z<br>Date Code<br>IR Logo  I ¢aR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>Ld<br>Lot Code<br>**----- End of picture text -----**<br>


TO-220AB  package is not recommended for Surface Mount Application. 

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**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [330 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUIRF1404ZS<br>Date Code<br>IR Logo  I éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br>


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## **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [331 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AUIRF1404ZL<br>Date Code<br>IR Logo  I GOR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>——<br>Lot Code<br>**----- End of picture text -----**<br>


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## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [385 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [377 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

12 2015-11-11 ~~TT~~ 

AUIRF1404Z/S/L ~~8} §=»§€§»—xcrmrcrcrcraa~~ 

## ~~eC~~ 

## **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|||TO-262|MSL1|
|||D2-Pak||
|**ESD**|Machine Model|Class M4† <br>AEC-Q101-002||
||Human Body Model|Class H1C†<br>AEC-Q101-001||
||Charged Device Model|Class C3† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|11/11/2015||Updated datasheet with corporate template||
|||Corrected ordering table onpage1.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

13 

2015-11-11 



## Links

- [View this product on Novapart](https://novapart.co/products/AUIRF1404Z/power-mosfet-n-channel-40-v-160-a-3700-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/auirf1404z/mosfet-n-ch-40v-160a-to220ab/dp/1813387)
---

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