# Power MOSFET, N Channel, 30 V, 75 A, 0.004 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/AP90T03GH-HF-3TR/power-mosfet-n-channel-30-v-75-a-0004-ohm-to-252
**SKU**: AP90T03GH-HF-3TR
**Manufacturer**: ADVANCED POWER ELECTRONICS CORP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2750
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 96W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 96W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.004ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 0.004ohm |
| Gate Source Threshold Voltage Max | 800mV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2319631/)
## - **Advanced Power Electronics Cor . p**
## **AP90T03GH/J** ~~—~~ **RoHS-compliant Product** _**N-CHANNEL ENHANCEMENT MODE**_
_**POWER MOSFET**_
▼ **Lower On- resistance** D BVDSS 30V ▼ **Simple Drive Requirement** RDS(ON) 4m Ω ▼ **Fast Switching Characteristic** ID 75A G S i ~~@~~ **Description** The TO-252 package is widely preferred for commercial-industrial **G D S**
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP90T03GJ) is available for low-profile applications.
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TO-252(H)
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G
D
S TO-251(J)
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## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|30|V|
|VGS|Gate-Source Voltage|+
20|V|
|ID@TC=25℃|Continuous Drain Current, VGS@ 10V|75|A|
|ID@TC=100℃|Continuous Drain Current, VGS@ 10V|63|A|
|IDM|Pulsed Drain Current1|350|A|
|PD@TC=25℃|Total Power Dissipation|96|W|
||Linear DeratingFactor|0.7|W/℃|
|TSTG|Storage Temperature Range|-55 to 150|℃|
|TJ|OperatingJunction Temperature Range|-55 to 150|℃|
**Thermal Data** Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)[3] 62.5 ℃ /W ~~—<__—~~ Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃ /W
**1**
_Data & specifications subject to change without notice_
**200901063**
## **AP90T03GH/J**
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## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=10V, ID=45A|-|-|4|mΩ|
|||VGS=4.5V, ID=30A|-|-|6|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|0.8|-|3|V|
|gfs|Forward Transconductance|VDS=10V, ID=30A|-|55|-|S|
|IDSS|Drain-Source Leakage Current|VDS=30V, VGS=0V|-|-|1|uA|
||Drain-Source Leakage Current (Tj=125oC)|VDS=24V, VGS=0V|-|-|250|uA|
|IGSS|Gate-Source Leakage|VGS= +
20V, VDS=0V|-|-|+
100|nA|
|Qg|Total Gate Charge2|ID=40A
VDS=24V
VGS=4.5V|-|60|96|nC|
|Qgs|Gate-Source Charge||-|8.5||nC|
|Qgd|Gate-Drain("Miller")Charge||-|38||nC|
|td(on)|Turn-on DelayTime2|VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω|-|14|-|ns|
|tr|Rise Time||-|83|-|ns|
|td(off)|Turn-off DelayTime||-|66|-|ns|
|tf|Fall Time||-|120|-|ns|
|Ciss|Input Capacitance|VGS=0V
VDS=25V
f=1.0MHz|-|4090|6540|pF|
|Coss|Output Capacitance||-|1010|-|pF|
|Crss|Reverse Transfer Capacitance||-|890|-|pF|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=45A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time2|IS=30A,VGS=0V,
dI/dt=100A/µs|-|51|-|ns|
|Qrr|Reverse RecoveryCharge||-|63|-|nC|
## **Notes:**
- 1.Pulse width limited by Max. junction temperature.
- 2.Pulse test
- 3.Surface mounted on 1 in[2] copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2**
**AP90T03GH/J**
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200
T C =25 [o] C
10V
160 7.0V
5.0V
4.5V
120 V G =3.0V
80
40
0
0 1 2 3
V DS , Drain-to-Source Voltage (V)
, Drain Current (A)
ID
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**Fig 1. Typical Output Characteristics**
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5.0
I D =20A
T C =25 [o] C
4.5
4.0
3.5
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
(mΩ)
DS(ON)
R
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**Fig 3. On-Resistance v.s. Gate Voltage**
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20
15
T j =150 [o] C T j =25 [o] C
10
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V SD , Source-to-Drain Voltage (V)
Is (A)
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Fig 5. Forward Characteristic of
Reverse Diode
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160
140 T C = 1 50 [o] C 7.0V10V
5.0V
120
4.5V
100 V G =3.0V
80
60
40
20
0
0 1 2 3 4 5
V DS , Drain-to-Source Voltage (V)
, Drain Current (A)
ID
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**Fig 2. Typical Output Characteristics**
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2.0
I D = 45 A
1.8 V G =10V
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50 0 50 100 150
T j , Junction Temperature ( [o] C)
DS(ON)
Normalized R
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**Fig 4. Normalized On-Resistance v.s. Junction Temperature**
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2
1.5
1
0.5
0
-50 0 50 100 150
T j , Junction Temperature ( [o] C)
(V)
GS(th)
V
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**Fig 6. Gate Threshold Voltage v.s. Junction Temperature**
**3**
## **AP90T03GH/J**
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14 10000 f=1.0MHz
I D = 40 A
12
V DS =15V Ciss
10 V DS =20V
V DS =24V
8
1000 Coss
Crss
6
4
2
0 100
0 20 40 60 80 100 120 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)
C (pF)
, Gate to Source Voltage (V)
GS
V
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**Fig 7. Gate Charge Characteristics**
**Fig 8. Typical Capacitance Characteristics**
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1000
100 100us
1ms
10 10ms
100ms
T c =25 [o] C DC
Single Pulse
1
0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
(A)
ID
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**Fig 9. Maximum Safe Operating Area**
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1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02 t
T
0.01
Single Pulse Duty factor = t/T
Peak T j = P DM x R thjc + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
)thjc
Normalized Thermal Response (R
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**Fig 10. Effective Transient Thermal Impedance**
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VDS
90%
10%
VGS
td(on) [t] r td(off) tf
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VG
QG
4.5V
QGS QGD
Charge Q
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**Fig 11. Switching Time Waveform**
**Fig 12. Gate Charge Waveform**
**4**
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## **ADVANCED POWER ELECTRONICS CORP.**
## **Package Outline : TO-252**
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Millimeters
D SYMBOLS
MIN NOM MAX
D1
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
E1 F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
B1 F1
F
e e 1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3 (0.1mm C
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## **Part Marking Information & Packing : TO-252**
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Laser Marking
Part Number
Meet Rohs requirement
for low voltage MOSFET only
90T03GH Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
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**5**
**ADVANCED POWER ELECTRONICS CORP.**
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## **Package Outline : TO-251**
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D
A
c1
D1
E2
E1 E
A1
B2
F
B1
c
e e
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|SYMBOLS|Millimeters|Millimeters|Millimeters|
|---|---|---|---|
||MIN|NOM|MAX|
|A|2.20|2.30|2.40|
|A1|0.90|1.20|1.50|
|B1|0.40|0.60|0.80|
|B2|0.60|0.85|1.05|
|c|0.40|0.50|0.60|
|c1|0.40|0.50|0.60|
|D|6.40|6.60|6.80|
|D1|4.80|5.20|5.50|
|E|6.70|7.00|7.30|
|E1|5.40|5.60|5.80|
|E2|1.30|1.50|1.70|
|e|----|2.30|----|
|F|7.00|8.30|9.60|
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1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
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## **Part Marking Information & Packing : TO-251**
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Part Number meet Rohs requirement
for low voltage MOSFET only
90T03GJ Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence
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**6**
## Links
- [View this product on Novapart](https://novapart.co/products/AP90T03GH-HF-3TR/power-mosfet-n-channel-30-v-75-a-0004-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/advanced-power-electronics-corp/ap90t03gh-hf-3tr/mosfet-nch-30v-4mohm-to-252/dp/2319631)
---
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