# Power MOSFET, N Channel, 30 V, 4.7 A, 0.042 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2319598/)

**URL**: https://novapart.co/products/AP2316GN-HF-3TR/power-mosfet-n-channel-30-v-47-a-0042-ohm-sot-23
**SKU**: AP2316GN-HF-3TR
**Manufacturer**: ADVANCED POWER ELECTRONICS CORP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0690
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 1.38W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1.38W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.042ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.7A |
| Drain Source On State Resistance | 0.042ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2319598/)

**Advanced Power Electronics Cor . p** 

## **AP2316GN-HF-3** 

## **N-channel Enhancement-mode Power MOSFET** 

## **Simple Drive Requirement** 

## **Low Gate Charge** 

**Surface Mount Device RoHS-compliant, halogen-free** 

**==> picture [231 x 72] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>BV                       30VDSS<br>R                    42mΩ<br>DS(ON)<br>G<br>I                         4.7AD<br>@ S |<br>**----- End of picture text -----**<br>


## **Description** 

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. 

The AP2316GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. 

**==> picture [83 x 70] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>S<br>SOT-23 G<br>**----- End of picture text -----**<br>


This device is well suited for use in medium current applications such as load switches. 

## **Absolute Maximum Ratings** 

|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage                                                              30                            V|e                                                              30                            V|e                                                              30                            V|
|VGS|Gate-Source Voltage|~~+~~<br>20                          V|20                          V|
|D         A<br>I<br>at T =25°C                                                                                                    4.7                           A|Continuous Drain Current3<br>at T =25°C                                                                                                    4.7                           A|at T =25°C                                                                                                    4.7                           A|at T =25°C                                                                                                    4.7                           A|
|ID<br>A<br>at T = 70°C                                                                                                    3.7                           A|Continuous Drain Current3<br>at T = 70°C                                                                                                    3.7                           A|at T = 70°C                                                                                                    3.7                           A|at T = 70°C                                                                                                    3.7                           A|
|IDM|Pulsed Drain Current1|10                            A|10                            A|
|D at TA=25°C<br>P|Total Power Dissipation                                                          1.38                          W|ation                                                          1.38                          W|ation                                                          1.38                          W|
|TSTG|Storage Temperature Range|-55 to 150                     °C|-55 to 150                     °C|
|J<br>T|Operating Junction Temperature Range|-55 to 150                     °C|-55 to 150                     °C|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient|90                 °C/W|90                 °C/W|



## **Ordering Information** 

**AP2316GN-HF-3TR     RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel** 

**201008182-3 1/5** 

**©2010 Advanced Power Electronics Corp. USA** 

**www.a-powerusa.com** 

**Advanced Power Electronics Cor . p** 

**AP2316GN-HF-3** 

## **Electrical Specifications at Tj=25°C (unless otherwise specified)** 

|**Electrical Specifications**|**Electrical Specifications at Tj=25°Cj=25°C=25°C°CC (unless otherwise specified)**|**(unless otherwise specified)**|||||
|---|---|---|---|---|---|---|
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max. Units|Max. Units|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|∆BVDSS/∆Tj|jBreakdown Voltage Temperature Coefficient|Reference to 25°C, ID=1mA             -|=1mA             -|0.02|-|V/°C|
|RDS(ON)|Static Drain-Source On-Resistance|VGS=10V, ID=4A|-|-|42|mΩ|
|||VGS=4.5V, ID=2A|-|-|72|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1|-|3|V|
|gfs|Forward Transconductance|VDS=10V, ID=4A|-|5|-|S|
|IDSS|Drain-Source Leakage Current|VDS=30V, VGS=0V|-|-|1|uA|
|||VDS=24V,VGS=0V, TJ=70°C               -|=70°C               -|-|10|uA|
|IGSS|Gate-Source Leakage|VGS=±20V|-|-|±100|nA|
|Qg|Total Gate Charge2|ID=4A<br>VDS=24V<br>VGS=4.5V<br>~~anne~~|-|5|8|nC|
|Qgs|Gate-Source Charge||-|1|-|nC|
|Qgd<br>~~ee~~|Gate-Drain("Miller")Charge<br>~~ee~~||-<br>~~anne~~|3<br>~~anne~~|-<br>~~anne~~|nC<br>~~anne~~|
|td(on)<br>~~ee~~|Turn-on DelayTime2<br>~~ee~~|VDS=15V<br>ID=1A<br>RG=3.3Ω,VGS=10V<br>RD=15Ω<br>~~anne~~|-<br>~~anne~~|7<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|tr<br>~~ee~~|Rise Time<br>~~ee~~||-<br>~~anne~~|8<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|td(off)<br>~~ee~~|Turn-off DelayTime<br>~~ee~~||-<br>~~anne~~|12<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|tf<br>~~ee~~|Fall Time<br>~~ee~~||-<br>~~anne~~|3<br>~~anne~~|-<br>~~anne~~|ns<br>~~anne~~|
|Ciss<br>~~ee~~<br>~~—————~~|Input Capacitance<br>~~ee~~<br>~~—————~~|VGS=0V<br>VDS=25V<br>f=1.0MHz<br>~~anne~~<br>~~—————~~|-<br>~~anne~~<br>~~—————~~|270<br>~~anne~~<br>~~—————~~|430<br>~~anne~~<br>~~—————~~|pF<br>~~anne~~<br>~~—————~~|
|Coss<br>~~ee~~<br>~~—————~~|Output Capacitance<br>~~ee~~<br>~~—————~~||-<br>~~anne~~<br>~~—————~~|70<br>~~anne~~<br>~~—————~~|-<br>~~anne~~<br>~~—————~~|pF<br>~~anne~~<br>~~—————~~|
|Crss<br>~~—————~~|Reverse Transfer Capacitance<br>~~—————~~||-<br>~~—————~~|60<br>~~—————~~|-<br>~~—————~~|pF<br>~~—————~~|
|Rg<br>~~—————~~|Gate Resistance<br>~~—————~~|f=1.0MHz<br>~~—————~~|-<br>~~—————~~|1.4<br>~~—————~~|2.1<br>~~—————~~|Ω<br>~~—————~~|



THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2/5** 

**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com** 

**Advanced Power Electronics Cor . p** 

**AP2316GN-HF-3** 

## **Typical Electrical Characteristics** 

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12 12<br>  10V   10 V<br>T A =25 [o] C 7.0V T A = 150 [o] C 7.0 V<br>5.0V 5.0 V<br>4.5V 4.5 V<br>8 es 8 a<br>V  G  = 3.0 V<br>4 V  G  = 3.0 V 4<br>P| pe<br>0 yo 0<br>0 1 2 3 4 0 1 2 3 4<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>        Fig 1. Typical Output Characteristics                 Fig 2. Typical Output Characteristics<br>65 1.8<br>I D = 2 A I D = 4 A<br>T A =25 [o] C V G =10V<br>55 1.5<br>45 1.2<br>BEL CD mm<br>3525 CoNSET 0.90.6 LEA<br>2 4 6 8 10 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>          Fig 3.      On-Resistance vs.                       Fig 4. Normalized On-Resistance<br>Gate Voltage           vs. Junction Temperature<br>4.03.0 To] 1.81.4 =eE<br>T j =150 [o] C T j =25 [o] C<br>2.0 1.0<br>1.0 0.6<br>0.0 ee 0.2 =<br>0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>               Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage vs.<br>            Reverse Diode                 Junction Temperature<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>) DS(ON)<br>Ω<br> (m<br>DS(ON)<br>R Normalized R<br>(V)<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


Fig 1. Typical Output Characteristics 

**==> picture [181 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
          Fig 3.      On-Resistance vs.<br>**----- End of picture text -----**<br>


**3/5** 

**©2010 Advanced Power Electronics Corp. USA** 

**www.a-powerusa.com** 

**Advanced Power Electronics Cor . p** 

**AP2316GN-HF-3** 

## **Typical Electrical Characteristics  (cont.)** 

**==> picture [412 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
f=1.0MHz<br>10 1000<br>I D =4A<br>8<br>V DS =15V C  iss<br>   V DS =20V<br>6       V DS =24V<br>100<br>C oss<br>4<br>C rss<br>2<br>0 10<br>0 2 4 6 8 1 5 9 13 17 21 25 29<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Fig 7. Gate Charge Characteristics 

Fig 8. Typical Capacitance Characteristics 

**==> picture [414 x 363] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1<br>Duty factor=0.5<br>10 0.2<br>cee ai 100us 0.1 Hin 0.1  eee<br>0.05<br>1 i} i} ‘ i} Id 1ms i} WY PDM<br>NSS 10ms 0.01 >t t T<br>0.01 Single Pulse Duty factor = t/T<br>0.1 renner { { ae{ { NUe SeinXN { RATT 100ms fod { i ii iemneall RPeak Tthja = 270 j  = P°C/W DM  x R thja  + T a 4<br>T A =25 [o] C 1s<br>Single Pulse DC<br>0.01 0.001<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>          Fig 9. Maximum Safe Operating Area       Fig 10. Effective Transient Thermal Impedance<br>12<br>V DS =5V DS =5V =5V VG<br>9 QG<br>T j =25 j =25 =25 [[o]] C T j =150 j =150 =150 [[o]] C 4.5V<br>6 QGS QGD<br>3<br>Charge Q<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>


Fig 9. Maximum Safe Operating Area 

Fig 10. Effective Transient Thermal Impedance 

**==> picture [184 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>V DS =5V DS =5V =5V<br>9<br>T j =25 j =25 =25 [[o]] C T j =150 j =150 =150 [[o]] C<br>6<br>3<br>0<br>0 2 4 6<br>V GS  , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>


Fig 11. Transfer Characteristics                                           Fig 12. Gate Charge Waveform 

**4/5** 

**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com** 

**Advanced Power Electronics Cor . p** 

**AP2316GN-HF-3** 

## **Package Dimensions: SOT-23** 

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**----- Start of picture text -----**<br>
D<br>D1<br>o><br>| E1<br>E<br>LP e<br>—<br>A A2 M<br>A1 M<br>L<br>**----- End of picture text -----**<br>


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Millimeters<br>SYMBOLS<br>MIN  NOM  MAX<br>CE A  0.88  --  1.30<br>ee A1  0.00  ee ee --  0.10<br>A2  0.08  --  0.25<br>a ee ee<br>D1  0.30  0.40  0.50<br>e  1.70  2.00  2.30<br>—-ee D  2.70  2.90  3.10<br>E  2.20  2.60  3.00<br>Fo E1  1.20  1.50  1.80<br>M  0°  --  10°<br>FE L  0.30  --  0.60<br>**----- End of picture text -----**<br>


1. All dimensions are in millimeters. 

2. Dimensions do not include mold protrusions. 

## **Marking Information:  SOT-23** 

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**----- Start of picture text -----**<br>
NIXX<br>i<br>**----- End of picture text -----**<br>


Product: NI = AP2316GN-HF-3 

## Date/lot code 

For details of how to convert this to standard YYWW date code format, please contact us directly. 

**5/5** 

**©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com** 



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- [Supplier page](https://es.farnell.com/en-ES/advanced-power-electronics-corp/ap2316gn-hf-3tr/mosfet-nch-30v-42mohm-sot-23/dp/2319598)
---

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