# Dual MOSFET, Dual N Channel, 30 V, 3.4 A, 0.06 ohm

![Product image](https://novapart.co/image/farnell:4472955/)

**URL**: https://novapart.co/products/AO6800/dual-mosfet-n-channel-30-v-34-a-006-ohm
**SKU**: AO6800
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0990
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 6Pins |
| Channel Type | Dual N Channel |
| Product Range | Multicomp Pro MOSFETs |
| Qualification | - |
| Transistor Case Style | SOT-23 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 1.15W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 3.4A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.06ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4472955/)

## **Dual Channel MOSFET** 

## **Features** 

- VDS (V) =30V 

- ID =-3.4 A (VGS =10V) 

- RDS(ON) < 60mΩ (VGS =10V) 

- RDS(ON) < 70mΩ (VGS =-4.5V) 

- RDS(ON) < 90mΩ (VGS =-2.5V) 

## **Absolute Maximum Ratings (Ta=25°C)** 

|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Symbol**<br>|**Rating**<br><br>~~es~~|**Unit**<br><br>~~A~~|
|---|---|---|---|---|
|Drain-Source Voltage<br>~~aee~~||VDS<br>~~ee~~|30<br>~~ee~~<br>~~es~~|V<br>~~ee~~<br>~~A~~|
|Gate-Source Voltage<br>~~ee~~<br>~~a~~||VGS<br>~~ee~~<br>~~a~~|+12<br>~~ee~~<br>~~es~~<br>~~a~~||
|Continuous Drain Current<br>~~a~~<br>~~|~~<br>~~a~~|TA= 25°C<br>~~a~~<br>~~|~~|ID<br>~~a~~<br>~~|~~|3.4<br>~~es ~~<br>~~a~~<br>~~|~~|A<br> ~~A~~<br>~~——~~|
||TA= 70°C<br>~~a~~<br>~~|~~||2.7<br>~~a~~<br>~~|siz~~||
|Pulsed Drain Current<br>~~|~~<br>~~a~~<br>~~pS~~||IDM<br>~~|~~<br>~~——~~|20<br>~~|siz~~<br>~~——~~||
|Power Dissipation<br>~~a~~<br>~~pS~~|TA= 25°C<br>~~pS~~|PD<br><br>~~——~~|1.15<br>~~siz~~<br>~~——~~|W<br>~~——~~|
||TA= 70°C<br>~~pS~~<br>~~e~~~~**s** Oe~~|~~——~~<br>~~PF~~<br>~~Oe~~|0.73<br>~~——~~<br>~~PF~~<br>~~eee~~||
|Thermal Resistance.Junction- to-Ambient<br>~~pS~~<br>~~ee~~|t ≤ 10s<br>~~pS~~<br>~~ee~~<br>~~e~~~~**s** Oe~~|RthJA<br>~~——~~<br>~~PF~~<br>~~ee~~<br>~~Oe~~|110<br>~~——~~<br>~~PF~~<br>~~ee~~<br>~~eee~~|°C/W<br>~~——~~<br>~~ee~~|
||Steady-State<br>~~pS~~<br>~~ee~~<br>~~e~~~~**s** Oe~~||150<br>~~——~~<br>~~PF~~<br>~~ee~~<br>~~eee~~||
|Thermal Resistance.Junction- to-Lead<br>~~e~~~~**s** Oe~~<br>~~e~~<br>~~SS~~||RthJL<br>~~Oe ~~<br>~~SS~~|80<br> ~~eee~~||
|Junction Temperature<br>~~SS~~||TJ<br>~~SS~~|150|°C|
|Storage Temperature Range<br>~~SS~~<br>~~a~~||Tstg<br>~~SS~~<br>~~a~~|-55 to 150<br>~~a~~||



## **Electrical Characteristics Ta = 25°C** 

|**Characteristic**<br>~~GQ~~|**Symbol**<br>~~GQ~~|**Conditions**<br>~~GQ~~|**Min**<br>~~GQ~~<br>~~GO~~|**Typ**<br>~~GQ~~<br>~~GO~~|**Max**<br>~~GQ~~|**Unit**<br>~~GQ~~|
|---|---|---|---|---|---|---|
|Drain-Source Breakdown Voltage<br>~~DO~~|VDSS<br>~~DO~~|ID=-250μA, VGS=0V<br>~~DO~~|30<br>~~GO~~<br>~~DO~~<br>~~es~~|~~GO~~<br>~~DO~~|~~DO~~|V<br>~~DO~~|
|Zero Gate Voltage Drain Current<br>~~|~~|IDSS<br>~~|~~|VDS=30V, VGS=0V<br>~~es~~<br>~~|~~|~~es~~<br>~~es~~<br>~~|~~|~~es~~<br>~~|~~|1<br>~~es~~<br>~~|~~|uA<br>~~|~~|
|||VDS=30V, VGS=0V, TJ=55°C<br>~~|~~|~~es~~<br>~~|~~|~~|~~|5<br>~~|~~||
|Gate-Bodyleakage current<br>~~OO~~|IGSS<br>~~OO~~|VDS=0V, VGS=±20V<br>~~OO~~|~~OO~~<br>~~GO~~|~~OO~~<br>~~GO~~|±100<br>~~OO~~|nA<br>~~OO~~|
|Gate Threshold Voltage<br>~~GG~~|VGS(th)<br>~~GG~~|VDS=VGSID=-250μA<br>~~GG~~|0.5<br>~~GG~~<br>~~GO~~<br>~~ee~~|~~GG~~<br>~~GO~~|1.5<br>~~GG~~|V<br>~~GG~~|
|Static Drain-Source On-Resistance|RDS(On)|VGS=10V, ID=3.4A<br>~~ee~~|~~GO~~<br>~~ee~~<br>~~ee~~|~~GO~~<br>~~ee~~|60<br>~~ee~~|mΩ|
|||VGS=10V, ID=3.4A TJ=125°C|~~ee~~<br>~~ee~~||88||
|||VGS=4.5V, ID=3A<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|70<br>~~ee~~||
|||VGS=2.5V, ID=2A<br>~~ee~~<br>~~OO~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|~~ee~~<br>~~ee~~<br>~~OO~~|90<br>~~ee~~||
|On State Drain Current<br>~~GO~~|ID(ON)<br>~~GO~~|VGS=10V, ID=5V<br>~~GO~~<br>~~OO~~|20<br>~~ee ~~<br>~~GO~~<br>~~OO~~<br>~~GO~~|~~ee~~<br>~~GO~~<br>~~OO~~<br>~~GO~~|~~GO~~<br>~~GO~~|A<br>~~GO~~|
|Forward Transconductance<br>~~GQ~~|gFS<br>~~GQ~~|VDS=-5V, ID=3.4A<br>~~OO~~<br>~~GQ~~|~~OO~~<br>~~GQ~~<br>~~GO~~|14<br>~~OO~~<br>~~GQ~~<br>~~GO~~|~~GQ~~<br>~~GO~~|S<br>~~GQ~~|



Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

Page <1> 05/08/24 V1.0 

## **Dual Channel MOSFET** 

|**Characteristic**|**Symbol**|**Conditions**<br>**Min**<br>**Ty**|
|---|---|---|
|Input Capacitance|Ciss|VGS=0V, VDS=-15V, f=1MHz<br>23<br>35<br>18|
|Output Capacitance|Coss||
|Reverse Transfer Capacitance|Crss||
|Gate Resistance|Rg|VGS=0V, VDS=0V, f=1MHz<br>4.3|
|Total Gate Charge(10V)|Qg|VGS=10V, VDS=15V, ID=-4.4A<br>10<br>4.7<br>0.9<br>1.6|
|Total Gate Charge(4.5V)|||
|Gate Source Charge|Qgs||
|Gate Drain Charge|Qgd||
|Turn-On DelayTime|td(on)|VGS=-10V, VDS=15V, RL=4.4Ω<br>,RG=3Ω<br>3.5<br>1.5<br>17.<br>2.5|
|Turn-On Rise Time|tr||
|Turn-Of DelayTime|td(of)||
|Turn-Of Fall Time|tf||
|BodyDiode Reverse RecoveryTime|trr|IF=3.4A, dI/dt=100A/μs<br>8.5<br>2.5|
|BodyDiode Reverse RecoveryCharge|Qrr||
|Maximum Body-Diode Continuous Current|IS||
|Diode Forward Voltage|VSD|IS=-2A,VGS=0V|



* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. 

## **Typical Characterisitics** 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## **Dual Channel MOSFET** 

## **Typical Characterisitics** 

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## **Diagram** 

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## **Part Number Table** 

## Dimensions : Millimetres 

||**Part Number Table**||
|---|---|---|
||**Description**|**Part Number**|
||Dual Channel MOSFET, 3.4A, 30V|AO6800|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/AO6800/dual-mosfet-n-channel-30-v-34-a-006-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/ao6800/mosfet-dual-n-ch-30v-3-4a-sot/dp/4472955)
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