# IGBT, 74 A, 1.66 V, 250 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2986335/)

**URL**: https://novapart.co/products/AIKW40N65DH5XKSA1/igbt-74-a-166-v-250-w-650-to-247-3-pins
**SKU**: AIKW40N65DH5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.7800
**Stock**: 10+
**Lead Time**: 281 days (indicative)

## Description

DC Collector Current:74A; Collector Emitter Saturation Voltage Vce(on):1.66V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 74A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.66V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986335/)

## AIKW40N65DH5 

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High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5 technology offering:<br>Best-in-Class efficiency in hard switching and resonant<br>topologies<br>Plug and play replacement of previous generation IGBTs<br>G<br>650V breakdown voltage<br>E<br>Low gate charge Q G<br>IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>Maximum junction temperature 175°C<br>Dynamically stress tested<br>Qualified according to AEC-Q101 =<br>Green package (ROHS compliant) Gy,<br>Complete product spectrum and PSpice Models: re liteg,<br>http://www. infineon.com/igbt/ i aa<br>Applications:<br>Off-board charger<br>On-board charger<br>DC/DC converter 1<br>Power-Factor correction 2<br>3<br>**----- End of picture text -----**<br>


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Applications:<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKW40N65DH5|650V|40A|1.66V|175°C|AK40EDH5|PG-TO247-3|



Datasheet www.infineon.com 

2017-06-30 

AIKW40N65DH5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||36.0<br>21.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,2)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.60|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|1.80|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

2) Package not recommended for surface mount applications. 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.66<br>1.85<br>2.05|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.53<br>1.49|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>800|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|50.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2300|-|pF|
|Output capacitance|_C_oes||-|43|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|92.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|153|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.38|-|mJ|
|Turn-off energy|_E_off||-|0.12|-|mJ|
|Total switchingenergy|_E_ts||-|0.50|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|161|-|ns|
|Fall time|_t_f||-|24|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.12|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.52|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.1|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-217|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1000A/µs|-|37|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.23|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-550|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|14|-|ns|
|Turn-on energy|_E_on||-|0.57|-|mJ|
|Turn-off energy|_E_off||-|0.22|-|mJ|
|Total switchingenergy|_E_ts||-|0.79|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|223|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.22|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|128|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.22|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-170|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1000A/µs|-|68|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.58|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|15.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-320|-|A/µs|



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275 80<br>250<br>TTTTTT] 70 Ty] [Td<br>225<br>CEE, 60 IA<br>200<br>- AEE. PA<br>ae ee 175 50<br>150<br>pho KBP DN<br>40<br>125<br>ee 100 30 |<br>er 75 TNC ye fr KA<br>20<br>50<br>Ne ee<br>10<br>ee \<br>25<br>0 Sg 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>To Ae<br>100 100<br>COA C7<br>VGE = 20V VGE = 20V<br>a Ca<br>18V 18V<br>80 80<br>ea 15V 15V<br>7an7s 12V ea |e Lee 12V<br>8 60 10V iVaneen 60 ene) 10V //ae a e<br>LOW ce<br>8V 8V<br>BC eae ee<br>7V 7V<br>40 40<br>ees 6V /Geeeees eeen8 6V (4p —<br>S NPR 5V & Re 5V<br>20 20<br>PON) PNK<br>PORK EE) EO JRBS<br>0 ZS 0 O EAEN<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


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## AIKW40N65DH5 

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120<br>Tj = 25°C<br>E Tj = 150°C y<br>100 aa | yyIf5 |<br>p L|<br>ee<br>80<br>Pa ee<br>Ww<br>ee<br>rs)w 60 /|<br>Ww<br>=e ed<br>(oe) 40 ['<br>.<br>2 A 7<br>CCT<br>20 Pt [TY] 7 | |<br>0 — ———|<br>cet—_— 7 trrr )<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical transfer characteristic<br>( V CE=20V)<br>I C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.50<br>IC = 5A<br>IC = 10A<br>2.25 IC = 20A<br>IC = 40A Ree<br>s<br>z 2.00<br>=<br>ll<br>rE<br><x 1.75<br>ee:<br>EE 1.50<br>ad<br>1.25<br>_<br>® 1.00<br>0.75<br>0.50<br>Liltt dt<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 6. Typical a function ( _V_ GE=15V) 

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**----- Start of picture text -----**<br>
1000 a a 1000 a SS SS ES ES<br>1| td(off) a ee ee ee | td(off) se ee ee ae<br>I tf p a a o i| tf aa aee eeeteee eee<br>td(on) td(on)<br>tr tr<br>F he FE be<br>| p o | Pea eee<br>= + } | {| _}<br>5 |<br>— 100 ee cs 100 a<br>ip) a a es<br>uw aa aeeenee ee ip)<br>= ce | a a<br>- a ee ee ee = a eeeee<br>Q eea es eeaae ee ee” a ee e eeeee<br>ef ete] eer |<br>= a = in eo ae<br>2)- 10 aa a ee 2)- 10 Aa SS<br>po a es ss es<br>a<br>aa ee ee aeeee ee<br>ee es a Deee<br>a Pf ft | hc] |<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =20A,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000 aEs |1 td(off) a aaRs  ee a a ee ee 5.5 typ.<br>tf min.<br>I td(on) aee 5.0 a max.<br>tr<br><x<br>rr — FE 4.5 S<br>=2 100 —Fryry fT aaye 4.0 hbKA | ~~ SN<br>ip)im= po a aes a (e)a ae SAY aw ~N.<br>- a a 3.5 Pe ~<br>es ee Ww a<br><= - ~<br>3.0<br>= | | | ed og AR —?<br>e _ — Lu ~ ~~<br>= pees eee ecteloeeee- ee meee La ~<br>10 2.5<br>7 a 7 Nn<br>po wi<br>ee N<br>a eseo) 2.0 ]<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>8 1.6<br>Eoff Eoff<br>Eon y/ Eon aa<br>7 = Ets / / 1.4 = Ets Y<br>/ 7<br>‘<br>_ / _ “<br>6 1.2<br>Lu / Lu “<br>io) / ip) y<br>(op) / (op) 7 -<br>e) 5 f e) 1.0 <<br>> / vA > “ =<br>©) / yo ©) 4A a7<br>w / iad Pa a<br>WwW 4 Ww 0.8 L<br>Zz / 7 Zz y a<br>Lu / WA Lu a -<br>Oo / / Oo a<br>Zz 3 Zz 0.6<br>: Awa : -<br>== 2 /aa yZO == 0.4 a ma<br>fa 1 / 7 a 0.2 LL|| | —<br>as<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>


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0.9 1.0<br>Eoff Eoff<br>0.8 EEonts oa 0.9 EEonts 7<br>El l lt l4 ELEL Ee<br>en 0.7 ee ee 0.8 ee<br>“oO “7 “ op) 0.7 ve<br>0.6<br>0.6<br>> oT _ > “ Za<br>0.5<br>0.5<br>0.4<br>oO oO 0.4<br>0.3<br>E 0.3<br>;<br>0)<br>0.2<br>0.2<br>0) ee |<br>0.1 eee ee 0.1 ee<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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16 1E+4<br>— V CC = 130V H Cies ee<br>V CC Coes<br>14 —-  =520V L (,/ i\ Cres pa o a<br>5 12 1000 |<br>oO —_ a ee<br><x LL Ps<br>FE 10 A 2 (a<br>e woo<br>LL 8 i 100 a ee ee ee<br>E ff 7 ————<br>= o ee<br>i ip a a ee<br>Lu 6 Oo aee<br>* 4 10 i eee<br>a es ss ee<br>po<br>2 a es<br>0 1<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHZz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>TTT AT 1 Pall imilil<br>s FOIAeee rll SSS eA ay<br>S ceo Pei Lf<br>Tr De D = 0.5 5 eV D = 0.5<br>TTT TTI ae allem ee ee<br>0.2 0.2<br>gem) 0.1 = Ua 0.1<br>a 0.1 on | Ba! a |} Tit Pe<br>ul eee 0.05 ey 0.1 aa a ye 0.05<br>= ae oS eee ee aieseetl<br>z5 Teorn ee 0.02 TC)oo eeCeCeAV 0.02<br>rd= pert| ee ae pu 0.01 S | 0.01 CT Th<br>uw= TVANI TT single pulse colL lll)Ie ertSenerZIMau ENEer TTso single pulse Mill<br>F ga tt I a x pina y<br>2 0.01 geeA TT TTI tC ST LEAH<br>QD Pecoed z 0.01 ON NAY)<br>J Ri Ro Aa | Ri Ro tt}<br>- HIM HT Cie Cathie | . CO A AT TTT Wii, cettaire _|ll<br>PAINE { UMM i: 1 AU 2 LA)TH 3 CAer 4 | FTA”IME LT?DAT TTEL i: 1 CCCot 2 3 oll<br>ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708 ri[K/W]: 0.6701584 0.775759 0.3540826<br>τ i[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881 τ i[s]: 3.4E-4 4.7E-3 0.04680901<br>0.001 4fa. 0.001 |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


Figure 18. Diode function ( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
160 1.4 Eees<br>\ Tj = 25°C, IF = 20A Tj = 25°C, IF = 20A<br>150 NE Tj = 150°C, IF = 20A T 1.3 f Tj = 150°C, IF = 20A e<br>140 PIM N\TPT Pt | f | O 1.2 PD= Led== fp<br>z ~<br>E7) 130 ) N e 1.1 {ttett<br>: efit |<br>1.0<br>eee eee:<br>120<br>Ww ag<br>g rae 0.9 TL |tt<br>OG3 110 PPTL EEE LLL (e)> 0.8 P|] yt fit td<br>et gs<br>100<br>y etter<br>0.7<br>fe]<br>90<br>—_— e 0.6 tity<br>- a<br>i 80 ee ae s5==<br>—— | 0.5 | TE<br>PPR<br>70 0.4<br>CECCCLEEEe ELEC<br>60 0.3<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. Typical of diode ( _V_ R=400V) 

Figure 20. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
22 0<br>21 Tj = 25°C, IF = 20A Tj = 25°C, IF = 20A<br>Tj = 150°C, IF = 20A Tj = 150°C, IF = 20A<br>20 EO -50 Ed<br>e 19 Ce a<br>-100<br>se 18 L e<br>17<br>poo A<br>-150<br>16<br>8B fe RE<br>| 15 Ecco<br>-200<br>6 14 s PSB<br>|v} | | | pit ig Soy<br>13<br>Broo FPR<br>-250<br>12<br>A: =<br>eB 11 Peperee # -300 |i. Ty]<br>10<br>9 PA | Tt tT | -350<br>8<br>PERE COE<br>7 PE | PP ET -400<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 21.<br>**----- End of picture text -----**<br>


Figure 22. 

( _V_ R=400V) 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
60 2.2<br>Tj = 25°C IF = 10A<br>a Tj = 150°C es) f IF = 20A o<br>IF = 40A<br>2.0<br>50<br>SS) Et<br>1.8<br>Ss 40 Sey S E<br>1.6<br>30<br>1.4<br>ce<br>ef 20 oT we EE<br>1.2<br>eo P| tT<br>Ae |<br>10<br>1.0<br>i a ee ee ee<br>ee,<br>0 pet | 0.8 Pp | |TT<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>


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## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO247-3** 

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## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKW40N65DH5 

## **Revision:�2017-06-30,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-06-30|Data sheet created|



15 

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## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKW40N65DH5XKSA1/igbt-74-a-166-v-250-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikw40n65dh5xksa1/igbt-aec-q101-650v-74a-250w-to/dp/2986335)
---

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