# IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3267596/)

**URL**: https://novapart.co/products/AIKW40N65DF5XKSA1/igbt-74-a-16-v-250-w-650-to-247-3-pins
**SKU**: AIKW40N65DF5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.3800
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 74A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3267596/)

## AIKW40N65DF5 

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High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>Best-in-Class efficiency in hard switching and resonant<br>topologies<br>650V breakdown voltage<br>G<br>Low gate charge Q G<br>E<br>IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>Maximum junction temperature 175°C<br>Dynamically stress tested<br>Qualified according to AEC-Q101<br>Green package (ROHS compliant) rs<br>Complete product spectrum and PSpice Models: Gi,<br>http://www. infineon.com/igbt/ re liteg,<br>Applications:<br>‘d<br>Off-board charger<br>On-board charger<br>DC/DC converter<br>Power-Factor correction 1<br>2<br>3<br>**----- End of picture text -----**<br>


## **Applications:** 

|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKW40N65DF5|650V|40A|1.6V|175°C|AK40EDF5|PG-TO247-3|



Datasheet www.infineon.com 

2017-06-30 

AIKW40N65DF5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||36.0<br>21.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,2)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.60|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|1.80|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

2) Package not recommended for surface mount applications 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.53<br>1.49|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|50.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|165|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.35|-|mJ|
|Turn-off energy|_E_off||-|0.10|-|mJ|
|Total switchingenergy|_E_ts||-|0.45|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|175|-|ns|
|Fall time|_t_f||-|12|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.10|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1230A/µs|-|73|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.54|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1530A/µs|-|31|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-640|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|195|-|ns|
|Fall time|_t_f||-|5|-|ns|
|Turn-on energy|_E_on||-|0.46|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.62|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|225|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.14|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.19|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1250A/µs|-|98|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.06|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-195|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1330A/µs|-|55|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.55|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-425|-|A/µs|



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275 80<br>250<br>70<br>225 oy RE<br>60<br>200<br>~ Soe, PN<br>175 50<br>ENG tL<br>150<br>EASES eee<br>40<br>125<br>Popes PK<br>ob EEA<br>100 30<br>= 75 PF<br>EN Tye 20 Pf | UN<br>50<br>Sy EEN<br>10<br>25<br>ee<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 BEE) | ee 120 eee?) ee<br>100 100<br>OA VGE = 20V Le VGE = 20V<br>18V 18V<br>80 80<br>s 15V [VAIO s Ce 15V<br>12V 12V<br>PLAT eo<br>60 10V 60 10V<br>8V 8V<br>qi 8 Sz<br>7V 7V<br>40 40<br>6V 6V<br>5V 5V<br>20 20<br>POACEEEEE) = LO JBeS ===<br>F ——————<br>0 0<br>0 PAS 1 2 3 4 5 =  L 0 ESSEE 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


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## AIKW40N65DF5 

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**----- Start of picture text -----**<br>
120<br>Tj=25°Cj=25°C=25°C<br>100 P Tj=150°Cj=150°C=150°C TT<br>| ly}<br>ee P o||<br>ee<br>80<br>e ||j<br>ivae j<br>oOBoDBoD peF<br>a 60<br>=e_!<br>_! / /<br>40<br>8--<br>SREP ee<br>/<br>20<br>4 | |<br>PE [[TAY]] [|<br>a2 ceneeneY ceneeneYY<br>0<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>


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120 2.50<br>Tj=25°Cj=25°C=25°C IC=10A<br>Tj=150°Cj=150°C=150°C IC=20A<br>2.25 IC=40A<br>100 P TT<br>| ly} s E<br>P z 2.00<br>ee o|| ll<br>ee<br>80<br>1.75<br>ivae ||j _ ===ai<br>oOBoDBoD peF beer——<br>a 60 Ee 1.50<br>-<br>=e_! / / ov= 1.25 a<br>40<br>8-- 2 tt | | |ff<br>SREP ee —! 1.00 ee ee<br>/<br>20<br>0.75<br>4 | |<br>PE [[TAY]] [|<br>a2 ceneeneY ceneeneYY eee<br>0 0.50<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>1| td(off) aa aee ee ee i| td(off) a ee a aee ee<br>I tf p o | tf ee eeee<br>td(on) td(on)<br>tr tr<br>F | he FE baereee eee<br>paw  | a ee ee|ee ee | [rPoeT | | | | | |<br>S T<br>z 100 || Tr ?z 100<br>ip) a a ss<br>uw poea a |ip) aSSss es<br>= ee<br>- a a ee = a ee ee ee ee<br>Qz rea eeeeee ae ee ae e e ee aeee ee<br>wae r mre<br>aT 7 oT abe<br>10 10<br>efor se | TE oe<br>- po - a 2 es es ee<br>a Se ae ee ee ee Ca 0<br>AA<br>aa a ee ee ee a a eeee ee<br>ee es a a eeeeee<br>a Pf ft | hc] |<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =20A,Dynamic test circuit in<br>Figure E) Figure E)<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000 aa 5.5<br>| 1 td(off) aa  ee a a ee ee typ.<br>I tf a ee ee ee eee _ min.<br>I td(on) aee 5.0 SLL max.<br>tr<br><x<br>— FE 4.5 a<br>fe) AL<br>iF 100 a es Q 4.0 S ~<br>ip) a i NO<br>im poa a a (e) mS NS S<br>- es ee Wy 3.5 NS S<br><= -<br>3.0<br>= ee ee ee ~ —™<br>: f —_ a<br>= Te - ~<br>10 2.5<br>7 poa a Ww ~N<br>ee ~<br>a eee e 2.0 ~N<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>8 1.6<br>Eoff Eoff<br>7 | EEonts / 1.4 | EEonts<br>/<br>—5 £ 6 ‘/ 7£ 1.2 ZYo<br>Ww / Ww LY<br>op) / ) 7<br>(op) 7 io) 7<br>e) 5 e) 1.0 c<br>| / | yY<br>[ag Yo w a a<br>3 4 / 3 0.8 < ea<br>Wl / v4 Ww a “ = -<br>3 0.6<br>LI4<br>-/<br>= 2 7 L 7 S Z a= 0.4 Z Za a<br>7<br>| 1 AP ane 0.2 eee<br>aZone —a<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>


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0.8 1.0<br>Eoff Eoff<br>Eon 0.9 Eon<br>0.7 Ets Ets<br>0.8<br>0.6<br>Lu a wi 0.7 7<br>ip): _ Lec - ~Pf ”: :<br>o 0.5 wen _ —_— o 0.6 “eo Zz<br>> “7 _ —_ > 7 “eo 7 a<br>uw 0.4 — Wi 0.5 aa Za<br>o 7 ~ o<br>0.4<br>Zz 0.3 Zz 27<br>E 0.3<br>; 0.2<br>ee ee 0.2 eee<br>| a —<br>0.1<br>pt pa<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16 1E+4<br>——7 VV CCCC == 520V130V / : HH CCiesoes eT a a<br>14 L M Cres eeee ee<br>5 12 A 1000 |<br>oO — a ee<br><x LL Pses<br>a 10 VA 2 e e<br>fe / W L a A<br>bu 8 i 100 a Oe ee<br>LI=i 6 f\) | —_ cS)oa aaPpeee<br>: 4 /i tf ft | | 10 2SEE eee<br>a es ss ee<br>po<br>2 a eeee<br>0 1<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 15. Typical ( _I_ C=40A) 

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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>PT ee 1 Pall imilil<br>D = 0.5 D = 0.5<br>iT] aL aN: zal allem ee ee<br>0.2 0.2<br>ge 0.1 0.1 lll (i = Eee 0.1<br>qi ort 7 con iit qi mill nit 1 Ha BSBA emma<br>fallS= SSeSAritaCer aiteeeen 0.050.02 a S 0.1 pULY] 1 Ut 0.050.02<br>a TnZeLe EH Serr Aner te EE<br>= eT 0.01 TT) PIE A ee 0.01 SIE<br>rd ANT| ee ae pou Ss | CT Th<br>uwx PV | Ue ei)lll single pulse EIN oe ertSenerZIMau ENEer TTso single pulse Mill<br>fC Wd aati Lert | eri = Ae yy,<br>6 0.01 Ceet) TTT fF ST LEAH<br>Q Peel e g 0.01 NOWI<br>f Ri Ro ee Ry Ro tii)<br>- EATEAP | eNom oto | AAMAT Mc ie, centers ll<br>AAAI IME LT? TTot oll<br>UUM i: 1 LA 2 CA 3 CAT 4 Fh FTA” DAT EL i: 1 CCC 2 3<br>ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708 ri[K/W]: 0.6701584 0.775759 0.3540826<br>τ i[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881 τ i[s]: 3.4E-4 4.7E-3 0.04680901<br>fe PTT TTT TT TT |. il a<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. Diode function ( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
130 1.2<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>120<br>DN Ee eee<br>\ sy 1.0 _i-<br>a 110 PT NTT“SS TTT).= LLLpan Reco<br>ef Pee<br>100<br>- _~ 7 =<br>: : sf<br>0.8<br>elx os<br>90<br>sf BE<br>ef<br>in 80 oN fs)<br>0.6<br>70<br>“Sy e Ppp<br>* > pt<br>els A<br>60 ete<br>0.4<br>50<br>40 0.2<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. 

( _V_ R=400V) 

Figure 20. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
20 0<br>19 Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>18 Fates Tj=150°C, IF = 20A  SS -50 eee— Tj=150°C, I —_ F = 20A<br>17<br>-100<br>16<br>fe | tT<br>eenener ener S00000000<br>15<br>Poot A$<br>-150<br>14<br>ie ee <<<br>13<br>| becca |SS<br>-200<br>12<br>6B 11 |47 [te] | SI<br>-250<br>B 10 eoopeerreey€ [ft REE<br>fi<br>ee 9 [Ee1T7Tt_TtrlTTT) -300<br>8<br>7 PP TT} |} | tye -350 TTT TTT yr<br>6 PP | PP ET |<br>5 PE | PP ET | -400 yy TT PT yy ye<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>( function V R=400V) of diode current slope recoveryope as a function of diode<br>( V R=400V)<br>60 2.2<br>Tj=25°C IF=10A<br>E Tj=150°C o] R IF=20A O<br>IF=40A<br>2.0<br>50 eye eae e ee<br>1.8<br>Ss po | | |<br>40<br>“ EF<br>1.6<br>30<br>1.4<br>ce<br>ef #¢  |[e Le<br>20<br>1.2<br>Sy ee<br>ip P| |<br>10 e/a a<br>1.0<br>a 7 ee<br>Fa<br>0 0.8<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>


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## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO247-3** 

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## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKW40N65DF5 

## **Revision:�2017-06-30,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-06-30|Data sheet created|



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## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKW40N65DF5XKSA1/igbt-74-a-16-v-250-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikw40n65df5xksa1/igbt-650v-74a-175deg-c-250w/dp/3267596)
---

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