# IGBT, 160 A, 1.5 V, 833 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2986429/)

**URL**: https://novapart.co/products/AIKQ120N60CTXKSA1/igbt-160-a-15-v-833-w-600-to-247-3-pins
**SKU**: AIKQ120N60CTXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €8.1200
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:833W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 833W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 160A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986429/)

AIKQ120N60CT 

## TRENCHSTOP[TM] 

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TM<br>**----- End of picture text -----**<br>


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Features: C<br>¢« Automotive AEC-Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>* 100% short circuit tested<br>* 100% of the parts are dynamically tested<br>¢ Positive temperature coefficient in V CE(sat)<br>* Low EMI @,,<br>G<br>+ Low gate charge Q 222, Cap<br>« Green package<br>¢ Very soft, fast recovery antiparallel Emitter Controlled HE -<br>diode ni<br>¢ TRENCHSTOP TM _ and Fieldstop technology for 600V :<br>applications offers: y<br>- very tight parameter distribution G d<br>- high ruggedness, temperature stable behavior C ‘<br>- very high switching speed E<br>Applications:<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKQ120N60CT|600V|120A|1.5V|175°C|AK120DCT|PG-TO247-3-46|



Datasheet www.infineon.com 

2017-02-09 

AIKQ120N60CT 

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## TRENCHSTOP[TM] �Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP[TM] �Series 

## **Maximum�Ratings** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=135°C|_I_C||160.0<br>120.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||480.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||480.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=124°C|_I_F||160.0<br>120.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||480.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C|_P_tot||833.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.18|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.30|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Package not recommended for surface mount application 

2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 

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## TRENCHSTOP[TM] �Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=120.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=120.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.90mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=120.0A|-|75.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|7530|-|pF|
|Output capacitance|_C_oes||-|446|-||
|Reverse transfer capacitance|_C_res||-|206|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=120.0A,<br>_V_GE=15V|-|772.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|846|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=120.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.0Ω,_R_G(off)=3.0Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|43|-|ns|
|Turn-off delaytime|_t_d(off)||-|310|-|ns|
|Fall time|_t_f||-|33|-|ns|
|Turn-on energy|_E_on||-|4.10|-|mJ|
|Turn-off energy|_E_off||-|2.80|-|mJ|
|Total switchingenergy|_E_ts||-|6.90|-|mJ|



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## TRENCHSTOP[TM] �Series 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=120.0A,<br>_di_F_/dt_=1100A/µs|-|280|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|3.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|25.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=120.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.0Ω,_R_G(off)=3.0Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|51|-|ns|
|Turn-off delaytime|_t_d(off)||-|355|-|ns|
|Fall time|_t_f||-|43|-|ns|
|Turn-on energy|_E_on||-|6.70|-|mJ|
|Turn-off energy|_E_off||-|4.10|-|mJ|
|Total switchingenergy|_E_ts||-|10.80|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=120.0A,<br>_di_F_/dt_=1000A/µs|-|410|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|10.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|45.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-520|-|A/µs|



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## ~~series~~ TRENCHSTOP[TM] 

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900 180<br>800 160<br>PP ttt} EE<br>700 NO 140<br>600 120<br>pe] Ne yee tA<br>500 100<br>Senenen| Senna<br>2 400 ee 80 eee<br>300 60<br>Pt oT INE ge EE<br>is ee Ge<br>200 40<br>100 ee ee 20 ee<br>|<br>0 PPE 0 EE<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C “CASE TEMPERATURE [°C T C “CASE TEMPERATURE[I<br>Figure 1. Figure 2.<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ iy T j ≤ 175°C)<br>360 360<br>VGE=20V VGE=20V<br>320 15V 320 15V<br>13V 13V<br>280 a 280 | oe /<br>11V 11V<br>9V 9V<br>e 240 SY 240 SN<br>|RoWLT LR RV<br>8V 8V<br>200 7V 200 7V<br>6V 6V<br>160 160<br>PE ANE PSS"<br>120 120<br>EA ISaoE ENCE<br>80 80<br>SP A LEN<br>40 Vw 40<br>0 p i APR e r |C OL 0 L_ LBERNNLAA NN<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. typical ( _T_ j=25°C) 

Figure 4. rypieal ( _T_ j=175°C) 

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AIKQ120N60CT 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
360 Lt<br>Tj=25°C<br>Tj=175°C<br>320 Ey<br>/<br>== 280240 PF]et ftftflLy| / | |<br>Zz /<br>WW<br>faa<br>w) 200 PF} fy |<br>ad<br>eeo 160<br>4<br>:a 120 Pt | tL i<br>80<br>40<br>0<br>0 2 4 6 8 10 12 14<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=20V) 

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**----- Start of picture text -----**<br>
3.0 Ld<br>IC=38A<br>IC=75A<br>IC=120A<br>Z 2.5 IC=150A<br>fe)3<br>Ee: 2.0 a<br>> cael<br>& [ee<br>B eee _<br>or rae cee? aor Ue<br>= 1.5 =<br>Lua —=__ -<br>FE<br>:Go 1.0 fT,<br>(e)<br>0.5<br>0.0<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


Figure 6. Typical a function ( _V_ GE=15V) 

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1000 1E+4<br>aa ee A ee ee Hi ttd(off)f a a<br>td(on)<br>tr<br>a ee ee ee \ es<br>ee<br>| td(off) ee A R O<br>tf<br>Ynze |e ttd(on)r |df ip)2 1000 |a | en| ee——ee|ee<br>Ww Lu a ce<br>= = a a ee ee ee<br>- - as a ee<br>100<br>SSS eee<br>5 a a a<br>Ee a es _<br>es Pole|p eepe el 100 es ee<br>aoewt a aee eeee ee<br>10 10<br>0 25 50 75 100 125 150 175 200 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>


Figure 7. 

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**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, r G=3 Ω ,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 8. Typical **resistor** 

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**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, I C =120A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Datasheet 

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AIKQ120N60CT 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
1000 aa 8<br>I | ttd(off)f po a ee ee ee typ.min.<br>| td(on) po 7 max.<br>tr<br>a Oo4<br>6<br>S S ee se ee. ee<br>= a mt<br>7p) 5 5 — ~te<br>WwW ~<br>= Lu ss<br>o)Z=oO 100 aa a a ee or= 4 ~> = a>_~ ——~~<br>a<br>Ee a ~<br>= re ee ee ee ee eee 3 ~SL<br>2 Lceeneefpeme ET ~<br>e e ee e 2<br>1<br>10 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =120A, r G=3 ,Dynamic test circuit in<br>E)<br>**----- End of picture text -----**<br>


Figure 10. 

( _I_ C=1,9mA) 

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**----- Start of picture text -----**<br>
30 40<br>Eoff Eoff<br>Eon Eon<br>Ets 35 Ets<br>/<br>25<br>3 / £ 30<br>Lu Lu a<br>dp)nO 20 7 / (dp)icp) aa<br>e)i / e) 25 ><br>>O / W > oe<br>ow 7 WA O ae<br>nm 15 ; nmwa 20 y<br>z / Zz oe<br>/ Pad<br>15<br>x= = 7<br>10<br>= 7 7 = oe<br>10<br>5 /oe7 - Le a<br>5<br>Ca“ ae<br>0 0<br>0 40 80 120 160 200 240 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T j =175°C, V CE=400V, (inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, r G=3 Ω ,Dynamic test circuit in V GE =15/0V, I C =120A,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Datasheet<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
16 16<br>Eoff Eoff<br>Eon Eon<br>14 Ets 14 Ets<br>5 5 “<br>£& 12 & 12 Z<br>Ww Ww “<br>7) _ 7)<br>io) eo op) 7<br>e) 10 = e) 10 <<br>aa Ube" aa Yo<br>> veo > 7<br>w a7 na a a<br>8 8<br>oO _—_— Oo “<br>Zz 6 a_oT Zz 6 Z<br>E a —_ E a“ 7 | |<br>=Seer 4 a _t| = 4 eeea _|<br>2 2<br>0 0<br>25 50 75 100 125 150 175 200 300 400 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T j =175°C, V GE=15/0V,<br>I C =120A, r G=3 ,Dynamic test circuit in I C =120A, R G=3 , Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>120V Cies<br>480V Coes<br>= / [-— _—_ |<br>14 / A/ == Cres -+-—+—-+ 4+—<br>7 1E+4 Se<br>/ —<br>_ e e<br>S — 12<br>ra} / (aa es es es ee<br>< / re<br>a 10 WA — Wy<br>e) / mn is<br>wv -_ 1000 PN<br>ey e |e NE<br>ul 8 ee < Ts<br>FE Oo a a a<br>== a poeeJ<br>6<br>ut a.a e ee e ee eee<br>O<br>: 100<br>4 _a ss<br>aa<br>asees<br>2 ee ee ee ee ee ee<br>0 10<br>0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=120A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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## AIKQ120N60CT 

## TRENCHSTOP[TM] 

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16001400 Pt] tl tye 12 KU<br>: : 10 PINEEE<br>é =a<br>3 1200 Z Are(| 3 eeN |<br>3 4 e PN<br>8<br>: 1000 y FZz<br>a fe PoP EN<br>MW ZL : LIN<br>800 6<br>a E NN<br>a<br>g 600 oa<br>oa Se 4 fo<br>rs) wa : Eaeeee<br>: Annee Ee Pet<br>400<br>=:; j 2 feytT ye|<br>200<br>ERR<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE | GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current asa Figure 18. sateemitterircuit Voltegwithstandantimei as a function<br>( enV. V CE  aartat T j 150°C) ( V CE “A0OV, start at T j =25°C, T jmax ≤ 150°C)<br>LAT TTFPPC PTTL co<br>=<.5O= 0.1 GSAHRSa By  SmaT 0.1 MLSa IeA|en|<br>2 CUCU*h Lyi LN TTTti 2O PCES Seeieee<br>eA ss YY Sul<br>D=0.5 D=0.5<br>= Wiper eh, Lu pi iil<br>WW VAatme 0.20.1 llmE)iii) = EareA 0.20.1<br>0.05 0.05<br>xS te ci 0.02 2S CeeAlp, Lit Tnml 0.02 CTWOT<br>0.01 0.01<br>0.01 }) III il single pulse | ra anyrT (Co single pulse<br>ce< ce Yall a egJypelee:Te<br>E ee mail Ee 0.01 Pn ZA er ul<br>22 COMIWi ZAtaa LatParrTn)<br>a H i Hi iemm<br>2 I eI 77} SS aatllli7a ae —<br>Mian Ret oh [LHe] |} Z i+<br>-- [|<br>TPA CHIGIMA ae Se GHG<br>:| SWAINA TLedteele HY St e -t<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.02686799 0.0369369 0.1151423 3.0E-3 ri[K/W]: 0.05464681 0.08604638 0.1607048 4.1E-3<br>τ i[s]: 2.1E-4 1.6E-3 0.01573455 0.2126417 τ i[s]: 2.1E-4 2.6E-3 0.01504089 0.2133931<br>| AMM  A Fi a 0 a A [ eT<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. function ient thermal impedancei  asa Figure 20. Diodei transientient thermalr impedance4; a8 asa2<br>cycles D of pulse width for different duty tyeles D  of pulse width for different duty<br>( D = t p/T) ( D = t p/T)<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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800 12<br>Tj=25°C, IF = 120A<br>Tj=175°C, IF = 120A<br>700<br>10 ttt<br>= \ = Tj=25°C, IF = 120A<br>uw 600 \ a} Tj=175°C, IF = 120A<br>= - ed<br>8<br>500<br>> ow<br>oe)uwF9 Nf 400 ~ XN \ ~ ~L fe)>rs> 6 aaa<br>uw<br>300<br>uw x 4<br>z&<br>f ||——<br>| 200<br>2<br>100 Pf | tt<br>0 0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( V R =400V,Dynamic test circuit in Figure E) ( V R =400V, Dynamic test circuit in Figure E)<br>70 0<br>Tj=25°C, IF = 120A Tj=25°C, IF = 120A<br>Tj=175°C, IF = 120A Tj=175°C, IF = 120A<br>—7<br>60<br>> -200<br>= a ee<br>a 7 Z a MS<br>50<br>a7 4 . -400 ol<br>> 40 Z<br>3a 8 -600 J<br>Ww 30 oO<br>a | 8 .<br>-800<br>y gs | [oF]<br>20<br>if<br>aa ce ee es<br>-1000<br>10 \<br>a<br>0 -1200<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


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( V R<br>**----- End of picture text -----**<br>


( _V_ R 

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## TRENCHSTOP[TM] 

**==> picture [474 x 286] intentionally omitted <==**

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360 / 4.0 Ld<br>Tj=25°C IF=38A<br>| Tj=175°C / / 3.5 IIFF=75A=120A<br>300 IF=150A<br>3.0<br>kK 240 Ww<br>Zz= / O7 2.5 Pf | tt<br>a / 4<br>3 / s<br>180 2.0<br>vd<br>Qo Q<br><x <x<br>= =<br>xr ag 1.5<br>oO oO<br>120<br>° ’ oe liie<br>J 1.0 oo_<br>/<br>60<br>0.5<br>/<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 25. 

Figure 26. 

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## TRENCHSTOP[TM] �Series 

## **Package Drawing PG-TO247-3-46** 

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MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] �Series 

## **Testing Conditions** 

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V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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t<br>**----- End of picture text -----**<br>


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Figure D. 

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CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## TRENCHSTOP[TM] �Series 

## **Revision�History** 

AIKQ120N60CT 

## **Revision:�2017-02-09,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-02-09|Data sheet created|



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## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKQ120N60CTXKSA1/igbt-160-a-15-v-833-w-600-to-247-3-pins)
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- [Supplier page](https://es.farnell.com/infineon/aikq120n60ctxksa1/igbt-aec-q101-600v-160a-833w-to/dp/2986429)
---

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