# IGBT, 80 A, 1.65 V, 305 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3582444/)

**URL**: https://novapart.co/products/AIKB50N65DH5ATMA1/igbt-80-a-165-v-305-w-650-to-263-d2pak-3-pins
**SKU**: AIKB50N65DH5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4200
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 305W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582444/)

## AIKB50N65DH5 

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High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>¢ Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>« Dynamically stress tested<br>* Qualified according to AEC-Q101 Ol<br>¢ Green package (ROHS compliant) b = ‘nf<br>¢« Complete product spectrum and PSpice Models: d GL 7. op<br>http://www.infineon.com/igbt/ ee<br>Applications:<br>¢ Off-board charger Fi<br>G<br>¢ On-board charger fl<br>¢« DC/DC converter<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB50N65DH5|650V|50A|1.65V|175°C|AK50EDH5|PG-TO263-3|



Datasheet www.infineon.com 

2019-10-17 

AIKB50N65DH5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>56.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||42.0<br>26.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||305.0<br>152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.50|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=27.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|50.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|65|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|115.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|163|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.55|-|mJ|
|Turn-off energy|_E_off||-|0.12|-|mJ|
|Total switchingenergy|_E_ts||-|0.67|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|169|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.13|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.16|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1235A/µs|-|77|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.66|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|15.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-265|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1345A/µs|-|38|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.33|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-720|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|182|-|ns|
|Fall time|_t_f||-|17|-|ns|
|Turn-on energy|_E_on||-|0.74|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.90|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|200|-|ns|
|Fall time|_t_f||-|34|-|ns|
|Turn-on energy|_E_on||-|0.21|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.26|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1230A/µs|-|115|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.37|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-245|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1300A/µs|-|61|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.67|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-517|-|A/µs|



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**----- Start of picture text -----**<br>
350 90<br>80<br>300 Pit tt PP EE<br>70<br>250<br>60<br>PP Xo, PRE<br> NC 200<br>50<br>pepL ASE<br>SGR\G8n| 150 40 oN<br>Pp 30 saeeNen<br>EEE<br> Na 100 PEN<br>20<br>RKG) Eee AS<br>50<br>10<br>PLU ULEP| ty |<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 "*N 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>150 150<br>VGE = 20V VGE = 20V<br>135 18V 135 18V<br>15V 15V<br>120 120<br>NG NC // NNNew/ aean<br>12V 12V<br>z Nf<br>105 105<br>10V | 10V Of<br>8V 8V<br>90 90<br>WE LESS/ Z|<br>7V 7V<br>75 75<br>6V 6V<br>60 5V 60 5V<br>45 45<br>: \WY dB VY<br>30 30<br>15 iKK| 15 fKY_<br>0  Zee ee 0 a<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=150°C) 

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150 2.2<br>Tvj = 25°C IC = 6.25A<br>135 E Tvj = 150°C J) yf} 2.0 | IICC = 12.5A = 25A La<br>IC = 50A<br>120 eee eeeS 1.8 (ce TT<br><x 105 /<br>ee oe 1.6<br>im <x<br>90<br>1.4<br>ee ee ee:<br>75<br>: | srry) 1.2<br>w |<br>eeWw 60 Ead<br>1.0<br>e/a<br>45<br>8 0.8<br>30<br>15 0.6<br>7<br>0 0.4<br>a eeeee<br>4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


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1000 aa 1000<br>1 | td(off) a a ee ee i| td(off) a ee ce<br>I tf ee ee ee | tf a ee ee ee ee eee<br>td(on) td(on)<br>tr tr<br>Ff} FE boa<br>|<br>Z le} se<br>— 100 Pe cs 100 a<br>ip) a Pe poee ee |<br>uw aaeolec ip)| rea eeee<br>= oe<br>- a ee ee ee = a eeeeee<br>a ee ee a re<br>Q=tl eeNeeoe io ae ee = aeaeo | eeee eee<br>EF=e:per Eee ms<br>2)- 10 a a 2) 10 a S(O<br>a<br>aa a<br>aa ee es ee aeeee ee<br>ee ee a Deee<br>es ee ee ee ee Pf ft | hc] |<br>1 1<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=12 Ω , Dynamic test circuit in V GE =15/0V, I C =25A,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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## AIKB50N65DH5 

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**----- Start of picture text -----**<br>
1000 aa 5.5<br>| 1 td(off) aa  ee a a ee ee typ.<br>I tf a ee ee ee eee _ min.<br>I td(on) a ee 5.0 max.<br>tr<br>Oe 4.5<br>[ E e eee <xFE ~ phon<br>iF2. 100 a es[| | |] | Q|: 4.0 ea ~<br>ip) po (e) se<br>im a a a <<br>- es ee Ww 3.5 P a .<br>= ke ~<br>3.0<br>a ~~ ™ \,<br>: : — NO<br>=2)° 10 a eS == 2.5 SN ~ IN<br>po Ww ~<br>ee ~~<br>a ee se x<br>a eseo) 2.0 \ \<br>1.5<br>\<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

Figure 10. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V, ( I C=0.5mA)<br>I C =25A, r G=12 ,Dynamic test circuit in Figure<br>E)<br>12 2.7<br>Eoff Eoff ¢<br>11 Eon Eon<br>Ets 2.4 Ets<br>A<br>10<br>2.1<br>z E 9 | | 2<br>:<br>8 1.8<br>g | LT [te]<br>aa / ¢<br>> 7 7 > “ _<br>1.5<br>6<br>WW / uA TT a -<br>1.2<br>|= 5 AE ee¢?<br>5 4 /7 7 =5 0.9 7 ¢ Z “7 Z<br>= 3 / Z| = Yo<br>0.6<br>ep) 7 7 2)<br>2<br>OO Ps<br>0.3<br>1<br>aa Z|<br>Pe ee e<br>0 eee 0.0 ce|<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=12 Ω ,Dynamic test circuit in V GE =15/0V, I C =25A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.0 1.2<br>Eoff Eoff<br>Eon 1.1 Eon<br>0.9 eee ee ee e e [ee]<br>Ets -o* 1.0 Ets ¢? va<br>Zz 0.8 = y “<br>0.9 ee ee7<br>2 0.7 f er4 2 e e<br>0.8<br>aa: 0.6 a aaie eea 7 ae<br>2 _— 2 0.7 Pea " 7<br>0.5 0.6<br>ffZz ffZz Poe “ 7<br>iwi wW 0.5 Feat 7<br>0.4<br>LL<br>0.4<br>E 0.3 E<br>° 0.3<br>0.2<br>0.2<br>a<br>{or “ [ [| ft ft ty<br>0.1<br>0.1<br>e e pt<br>0.0 0.0<br>e e  eee<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =25A, r G=12 ,Dynamic test circuit in I C =25A, r G=12 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>[7<br>— V CC Cies<br>V CC Co(er)<br>14 q 1E+4 I= Coes (EET<br>_ 12 Hi, ee Cres ee<br>al ee<br>Ww 7/ a<br>1000<br>FE 10 A 2 _——————————<br>O> uw ‘aa<br>Vs 2 a ee a ee ee eee<br>ke 8 } —< HKpot TT<br>100<br>: a, S Ro<br>ii rs a SSE —————————<br>Mu 6 O- eSa eS ee<br>x<br>o {a<br>4<br>10<br>aa<br>2 a<br>0 Ae 1 | | | | | |<br>0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=50A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>


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AIKB50N65DH5 

**==> picture [475 x 313] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>Fre tan<br>AVV EK 1 co iA m T<br>=SEU TTen TT) Ea H Crt<br>_ am. SESS ett<br>Z4» ERC — CTCNYY<br>a IN, 2 CIR D = 0.5 mo<br>uw 0.1 OA a mI aty/ UU)<br>oO NNPN NC AAa oeee eeooee Lu |)y, g {f ll 0.2<br>= PC CTIN NIZA 0.1 | ls ‘jin hi<br>Pe SS Sv Ai a 0.1<br>=z ee \ \V at 7 al iT 0.05<br>fe COSe4 NaC D = 0.5 TMToTeeI =Wi oiSet=  APSi datetime== 0.02<br>FT 0.2 eT 0.01 TTTt<br>0.1 single pulse<br>EL LAS ae maa a<br>0.01<br>BAS 0.05 gy cj<br>0.01<br>TT<br>0.02<br>E. HYA | S00LU Sn 0.01 CiAhIR, ConfalRe —- |CACC CI TTT Tce contains i_|ll<br>a single pulse ATT Z O<br>yA i: 1 2 3 4 WY 5 CATT 6 LATA Pr [LLU i: 1 Ceoy 2 col 3 4<br>ri[K/W]: 3.6E-3 0.119435 0.182725 0.177799 0.014558 2.0E-3 ri[K/W]: 0.37383 0.39164 0.52663 0.30736<br>τ i[s]: 1.1E-5 2.8E-4 1.9E-3 9.4E-3 0.149024 2.064771 τ i[s]: 1.7E-4 9.3E-4 0.01136 0.04589<br>| ——— |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


Figure 18. Diode function ( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
160 1.8<br>Tvj = 25°C, IF = 25A Tvj = 25°C, IF = 25A<br>150 Tvj = 150°C, IF = 25A Tvj = 150°C, IF = 25A<br>1.6<br>140 ~ g<br>SfoT qT | ft et<br>BP] o N ts 1.4 -<br>130<br>orPp> 120 ON~N O> 1.2 7 bem<br>fe) 110 ~ ><br>pe | |pol &<br>a 1.0<br>100<br>ptmy et [ttt] i ys<br>eee:<br>90<br>> PN i 0.8<br>a<br>80 — ——_<br>22S<br>0.6<br>70<br>60 0.4<br>500 700 900 1100 1300 1500 1700 1900 500 700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Typical reverse recovery time as a function Figure 20. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
26 -100<br>Tvj = 25°C, IF = 25A Tvj = 25°C, IF = 25A<br>Tvj = 150°C, IF = 25A Tvj = 150°C, IF = 25A<br>24 EO]<br>|lU EL<br>< aa - -150<br>_ 22 Z =,<br>a / z ‘.<br>Z<br>a 20 -200<br>7<br>fe 18 £<br>f re) aw<br>-250<br>gs 4 3 Nh<br>if | § >=<br>16<br>Ww<br>pf3 14 orgZO 2 -300 aT|<br>> [.]<br>i<br>12<br>-350<br>10<br>8 -400<br>500 700 900 1100 1300 1500 1700 1900 500 700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( V R=400V)<br>**----- End of picture text -----**<br>


( _V_ R=400V) 

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**----- Start of picture text -----**<br>
80 2.50<br>Tvj = 25°C IF = 12.5A<br>Tvj = 150°C IF = 27A<br>70 2.25 IF = 50A<br>=a 6050 ei | Le "|g 2.001.75 P| | tf | to<br>:<br>I<br>5 e)<br>w°Q 40 Pf :0 1.50 P| | tt<br>30 1.25<br>a<br>20 1.00<br>10 0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>


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## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO263-3** 

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



Datasheet 

V�2.1 2019-10-17 

AIKB50N65DH5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

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AIKB50N65DH5 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKB50N65DH5 

## **Revision:�2019-10-17,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|



15 

V�2.1 2019-10-17 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKB50N65DH5ATMA1/igbt-80-a-165-v-305-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikb50n65dh5atma1/transistor-igbt-650v-80a-to-263/dp/3582444)
---

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