# IGBT, 80 A, 1.6 V, 305 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3582443/)

**URL**: https://novapart.co/products/AIKB50N65DF5ATMA1/igbt-80-a-16-v-305-w-650-to-263-d2pak-3-pins
**SKU**: AIKB50N65DF5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.0800
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 305W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582443/)

## AIKB50N65DF5 

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**----- Start of picture text -----**<br>
High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>¢ Low gate charge Q G<br>E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Dynamically stress tested C<br>* Qualified according to AEC-Q101<br>¢ Green package (ROHS compliant) Ol<br>¢« Complete product spectrum and PSpice Models: ron ‘nf<br>http://www. infineon.com/igbt/ : GL 7. op<br>026<br>a,<br>Applications:<br>¢ Off-board charger f<br>¢ On-board charger Fan)<br>G<br>*« DC/DC converter A<br>¢ Power-Factor correction<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB50N65DF5|650V|50A|1.6V|175°C|AK50EDF5|PG-TO263-3|



Datasheet www.infineon.com 

2019-10-17 

AIKB50N65DF5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>56.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||42.0<br>26.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||305.0<br>152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.50|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=27.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|50.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|65|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|115.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|166|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.55|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.66|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|172|-|ns|
|Fall time|_t_f||-|28|-|ns|
|Turn-on energy|_E_on||-|0.13|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.17|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1225A/µs|-|79|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.65|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-235|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1335A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.32|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-805|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|179|-|ns|
|Fall time|_t_f||-|9|-|ns|
|Turn-on energy|_E_on||-|0.74|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.89|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|205|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.21|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1190A/µs|-|117|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.35|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-224|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1268A/µs|-|63|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-514|-|A/µs|



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**----- Start of picture text -----**<br>
350 90<br>80<br>300 Pit tt PP EE<br>70<br>250<br>60<br>PP Xo, PRE<br> NC 200<br>50<br>pepL ASE<br>SGR\G8n| 150 40 oN<br>Pp 30 saeeNen<br> Na 100 PEN<br>20<br>ON GERAD<br>50<br>10<br>PLU P|ULEty |<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 "*N 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>


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150 150<br>VGE=20V VGE=20V<br>135 18V 135 18V<br>IN 15V ENG 15V 7a<br>120 120<br>\\ If NG ae<br>12V 12V<br>105 105<br>z 10V NY/ee 10V WS<br>8V 8V<br>90 90<br>N/A eS / ae<br>7V 7V<br>75 75<br>6V 6V<br>60 5V 60 5V<br>45 45<br>30 30<br>fx<br>15 15<br>> | |fyxs——<br>0 A e e 0 e 4<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=150°C) 

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## AIKB50N65DF5 

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**----- Start of picture text -----**<br>
150 2.50<br>Tvj = 25°C IC = 6.25A<br>135 Tvj = 150°C IC = 12.5A<br>2.25 IC = 25A<br>IC = 50A<br>120<br>fe)<br>_ I éE 2.00 7<br>ee 105 ee ee<br>ee eee<br>1.75<br>90<br>z 5<br>.ef BeerE<br>a 75 Ee 1.50<br>4a 60 Po | LAE OadFE 1.25<br>ee) ee:<br>rs) 45 / a<br>1.00<br>: fe) jp  —<br>30<br>0.75<br>ffif de<br>15<br>0 -— LA.CA 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 ——— a<br>|1 td(off) aa a ee ee |i td(off) ppm a ee|<br>I tf ee ee ee | tf a ee ee ee eee<br>td(on) td(on)<br>tr tr<br>Ff} | p o EE |  baa ee |<br>100 100<br>z | TT} g -<br>ip) (a ee ee a es es a ee<br>uw pee ee ip) poee<br>= a Sa ne | a a a Se<br>- a eeee ee eeee ee = aa eeaeeeeee ee<br>Q a a en ee ee ee Geeeeee<br>= ciao Se<br>E Noe E oY<br>2) 10 a 2) 10 a A a ee ee<br>- a a - a<br>aEe iAa aeeeea es ee ee<br>a ee a ee ee ee ee ee eee eee<br>a ee ee a Deee<br>es ee ee ee ee Pf ft | hc] |<br>1 1<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>


Figure 7. 

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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=12 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 8. Typical **resistor** 

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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =25A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000 aa 5.5<br>td(off) typ.min.<br>I I ttfd(on) a ee — 5.0 max.<br>a eeee she<br>tr<br>4.5<br>( ee a -<br>oe a<br>ss 100 ee Qa 4.0 ~<br>ee<br>- esee ee 3.5 —™—. .<br>es es SY x<br>3.0<br>e n ee —— \<br>> p oco} Bf<br>10 E e i 2.5 N<br>”. A<br>poa eseo)x 2.0 \N<br>1.5<br>—+F4+4>4° |] [PPE] |<br>a<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj ,JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.5mA)<br>I C =25A, r G=12 ,Dynamic test circuit in Figure<br>E)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
13 3.2<br>Eoff 3.0 Eoff<br>12 fe Eon ] f Eon t<br>Ets 2.8 Ets<br>ee ed ee ee | ft i | ft<br>11<br>2.6<br>10<br>Z Af2 2.4 f o<br>7 9 Y e 2.2<br>ee 8 2.0 ee ee<br>1.8<br>a 7 ee ae<br>1.6<br>6<br>ee eae 1.4 ee ae<br>5 1.2<br>ee 4 ee 0ee 1.0 ee eee<br>0.8<br>Bf A 3 ee<br>0.6<br>fet<br>2<br>0.4<br>>a eee<br>1<br>0.2<br>0 Pa eee 0.0 eee<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses asa<br>function of collector T vj  current V CE=400V, feuen ofgate T  resistor vj V CE=400V,<br>V inetsOv GE r G=12 Ω Dynevnic test circuitin V " GE =15)/0V. I C =25A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.2 1.2<br>Eoff Eoff<br>Eon 1.1 Eon<br>Ets Ets<br>1.0 1.0<br>—_ —_ “<br>0.9<br>D 0.8 =a 0.8<br>-_o" __ - o a<br>>a - > 0.7<br>Ww: 0.6 _ aaa owGo| 0.6 ee“* ee [|]<br>Zz - Ww ,<br>i _— Zeeea  eea<br>0.5<br>L=<br>O 0.4 O 0.4<br>EE<br>° 0.3<br>0.2 0.2<br>P| “ [pa[| [ | ft 7<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =25A, r G=12 ,Dynamic test circuit in I C =25A, r G=12 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>[7<br>— V CC Cies<br>V CC Co(er)<br>14 -—— 7 / / 1E+4 H E CCoesres _—_——— L<br>a a a<br>ee ee<br>_ 12 Wf, a e e<br>ee<br>Ww<br>= 7. a a ee<br>1000<br>PL Lf lg Gee ==<br>FE 10 /) 2 SE<br>O uw aa<br>Vs= 8 <—porf<br>: iY S 100 Ro<br>i rT a. SS eee<br>Ww 6 oO SR ee ee ee ee ee ee<br>-<br>5<br>y<br>o [aee<br>4<br>10<br>2 [<<<br>0 Pet ft | 1 |a | | | | |<br>0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=50A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


**==> picture [61 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>aPF ae IE TIA TTI TATE ETT<br>=<br>=5 TCM Con —Lertaa | 1 a i eeSLeee Te<br>lu CO CI Ce D = 0.5 rT CT CTT & S S<br>23 oesb 0.2 TT UT HHI=< SeteWange<br>|UA 0.1 ge D = 0.5<br>0.1<br>0.05 0.2<br>a A 3 | AN<br>eS E SHERe 0.02 ee 0.1 lig’ A 0.1 ea<br>a CO aeem Tn) = ST a oh<br>0.01 0.05<br>HCH=+- YAV/A ae. single pulse ICHHE ET $a2e SEWi a 0.020.01 arTTT<br>single pulse<br>a | i b LAA ANE | IMM UTM<br>0.01<br>D BWANA[ff a y WW<br>2 I I S S H E RT H S 0.01 S/ R Re<br>: a yf -- Py Ti -— {ll<br>° sty)AI/ Tail ani ETSigg | ese) carters ii fatPaiSe oe Siggs eerie it<br>OF A i: 1 2 3 4 5 6 CREATa a PESee i: 1 2 3 4<br>ri[K/W]: 3.6E-3 0.119435 0.182725 0.177799 0.014558 2.0E-3 ri[K/W]: 0.21825 0.39674 0.52365 0.46136<br>τ i[s]: 1.1E-5 2.8E-4 1.9E-3 9.4E-3 0.149024 2.064771 τ i[s]: 5.0E-5 4.9E-4 7.0E-3 0.04062<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. Diode function ( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
160 1.6<br>Tvj = 25°C, IF = 25A Tvj = 25°C, IF = 25A<br>= Tvj = 150°C, IF = 25A Sa Tvj = 150°C, IF = 25A<br>1.4<br>140<br>r ‘ a 1.2 mae<br>= 120 =< < 7<br>1.0<br>OG 100 O<br>0.8<br>ep) uw<br>g 80 Sa : |<br>0.6<br>60<br>0.4<br>40 0.2<br>500 800 1100 1400 1700 2000 500 800 1100 1400 1700 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. Typical of diode ( _V_ R=400V) 

Figure 20. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
24 -100<br>Tvj = 25°C, IF = 25A Tvj = 25°C, IF = 25A<br>Tvj = 150°C, IF = 25A Tvj = 150°C, IF = 25A<br>22 EO)Ld a El) EELd<br>- _<br>E2 20 7 <=, -150<br>Lu 4 =<br>ro)=)>a 18 A 7 | | feSS 2°a=o \\\<br>> 16 = re -200<br>© / — x<br>tu / o<br>if 14 / ZO o<br>a g<br>(e)<br>rf 12 -250 x<br>10<br>8 -300<br>500 800 1100 1400 1700 2000 500 800 1100 1400 1700 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


Figure 21. 

Figure 22. 

( _V_ R=400V) 

( _V_ R=400V) 

**==> picture [474 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 2.50<br>Tvj = 25°C IF = 12.5A<br>Tvj = 150°C IF = 27A<br>70 Tvj = -40°C 2.25 IF = 50A<br>60 2.00<br>50 1.75<br>si g<br>wI<br>D [O]<br>:°Q 40 et | lA :a 1.50 P| | ft<br>a<br>S$= / =ce<br>30 1.25<br>or rn<br>O PT<br>20 1.00 |<br>10 0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

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## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO263-3** 

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



Datasheet 

V�2.1 2019-10-17 

AIKB50N65DF5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

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AIKB50N65DF5 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKB50N65DF5 

## **Revision:�2019-10-17,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|



15 

V�2.1 2019-10-17 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKB50N65DF5ATMA1/igbt-80-a-16-v-305-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikb50n65df5atma1/transistor-igbt-650v-80a-to-263/dp/3582443)
---

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