# IGBT, 74 A, 1.65 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3582442/)

**URL**: https://novapart.co/products/AIKB40N65DH5ATMA1/igbt-74-a-165-v-250-w-650-to-263-d2pak-3-pins
**SKU**: AIKB40N65DH5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4800
**Stock**: 1000+
**Lead Time**: 281 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 74A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582442/)

## AIKB40N65DH5 

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High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>¢ Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>« Dynamically stress tested<br>* Qualified according to AEC-Q101 Ol<br>¢ Green package (ROHS compliant) b = ‘nf<br>¢« Complete product spectrum and PSpice Models: d GL 7. op<br>http://www.infineon.com/igbt/ ee<br>Applications:<br>¢ Off-board charger Fi<br>G<br>¢ On-board charger fl<br>¢« DC/DC converter<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB40N65DH5|650V|40A|1.65V|175°C|AK40EDH5|PG-TO263-3|



Datasheet www.infineon.com 

2019-10-17 

AIKB40N65DH5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||37.0<br>22.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.60|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|90.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|158|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.41|-|mJ|
|Turn-off energy|_E_off||-|0.12|-|mJ|
|Total switchingenergy|_E_ts||-|0.53|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|163|-|ns|
|Fall time|_t_f||-|37|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.16|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1184A/µs|-|72|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.52|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-248|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1165A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-680|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|176|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.54|-|mJ|
|Turn-off energy|_E_off||-|0.18|-|mJ|
|Total switchingenergy|_E_ts||-|0.72|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|196|-|ns|
|Fall time|_t_f||-|32|-|ns|
|Turn-on energy|_E_on||-|0.17|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.23|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1185A/µs|-|108|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.01|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-202|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1125A/µs|-|60|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.54|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-422|-|A/µs|



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**----- Start of picture text -----**<br>
300 80<br>70<br>250<br>Pit ett} Ae ee et<br>60<br>pA PNcEE<br>200<br>50<br>IX =<br>150 40<br>PEN STN<br>Je 30 EK<br>PPX EN<br>100<br>20<br>NSP RAR<br>50<br>10<br>[EEE]<br>0 0<br>Pp [LPEEN] | NS<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE = 20V<br>VGE = 20V<br>18V<br>18V<br>oN 7<br>100 100 15V<br>15V<br>12V<br>12V<br>10V<br>80 80<br>10V<br>8V<br>8V<br>7V<br>7V<br>60 60<br>6V<br>6V<br>E [ Fr /<br>5V<br>5V<br>40 40<br>20 20<br>0 0<br>D ASE D p  zeman<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=150°C) 

Datasheet 

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## AIKB40N65DH5 

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**----- Start of picture text -----**<br>
120 2.50<br>Tvj = 25°C IC = 5A<br>Tvj = 150°C IC = 10A<br>2.25 IC = 20A<br>100 IC = 40A<br>z<br>2.00<br>=s we<br>80<br>oei / ep)< 1.75<br>. E<br>a 60 Ee 1.50<br>Ww ad<br>1.25<br>40<br>._<br>1.00<br>20<br>0.75<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage as<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>|1 td(off) aa aee ee ee |i td(off) ee a ee ee ae<br>I tf p o | tf a ee ee eee eee<br>td(on) td(on)<br>tr tr<br>F p FE bee<br>| p o | loa |<br>a | ter | | | lll<br>z TTT ea: Vv<br>— 100 pe cs 100 a<br>ip) Pee a<br>uw aae aeeTe ip)| aa aeeheee ee es es Lee<br>= a es ee ee ee = a ee ee ee ee eee<br>- aed,ee ee ee ee ee ed ee ee<br>Q a Q a a ee ee<br>a ec ee<br>E E “-<br>ee | | UE ee<br>2) 10 a a 2) 10 a<br>- a - RR<br>Ee es SS es<br>aaa<br>aa a eeee ee<br>a Deee<br>a Pf ft | hc] |<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of gate<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =20A,Dynamic test circuit in<br>Figure E) Figure E)<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>


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## AIKB40N65DH5 

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**----- Start of picture text -----**<br>
1000 aa 5.5<br>| i td(off) a ee ee ee typ.min.<br>tf<br>I td(on) a ee ee ee eee _ 5.0 = max.<br>I a eeee a<br>tr<br>4.5<br>(Oa es ee eee <xFE SA tL<br>e) sy<br>iF 100 a es Q 4.0<br>ip) a _ | ae<br>im po (e) S.<br>= a — SS<br>- a a 3.5 aie .<br>a Ww a x<br>= ke ~— *<br>3.0<br>a ee eeee e — —<br>=<br>e e<br>10 2.5<br>7<br>po a aa wi7 \<br>a<br>a ee se x 2.0 \<br>eseo) \<br>\<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>8 2.0<br>Eoff Eoff<br>Eon 1.8 Eon<br>7 | Ets / | Ets I Y<br>/ “<br>5 / 5 1.6 7<br>6<br>ie) / ip) Ve<br>7) / 7) 1.4 : ]<br>5<br>7 / 7 a 1.2 5 Lo<br>va / 7 ya vy “7<br>19) 7 Va 19) ?<br>a / / ing 0 a<br>ra 4 4 7 y 1.0 ” a”<br>Ww / 7 Ww 7 7<br>Y) / 7 U) 0.8 “ 2<br>Zz 3 7 Zz “a ri<br>—4 0.6<br>7<br>2<br>5 ° : a Te” be4 —<br>0.4<br>” eT<br>Zeo & ><br>1 _—<br>oa 0.2 pt<br>a ley<br>or<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>


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## AIKB40N65DH5 

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**----- Start of picture text -----**<br>
0.9 1.0<br>Eoff Eoff<br>0.8 EEonts 0.9 EEonts<br>Elll tt)o Eee ?<br>~| 0.7 e y) , 0.8 Fe<br>7p) 7 7p)<br>0.7<br>a) 0.6 a) “ v7<br>O -_ -_— O 7 Pa<br>aa --- _ aa 0.6 Z<br>>oO 0.5 Ss ae >oO oo“ a<br>uw _ _ uw 0.5 ><br>0.4<br>2 Zz 0.4 7<br>0) 0.3 PP fff | U) Pae 2<br>E E 0.3 <-<br>n —| oa<br>; 0.2 a Fe<br>0.2<br>0.1 SSS eee 0.1 Pe<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
16<br>——s-rnv V CC | Cies a<br>V CC - i¢ 1E+4 I CCooes(er)<br>14 Cres<br>a<br>12 E E<br>=. fi a  a ee<br>Ww<br>1000<br>FE 10 jy 2 E e<br>O> uw aaSC<br>Vs 2 pe<br>E 8 =< a a eee<br>100<br>: 7, S fo<br>i i a. —————————<br>6<br>Mu O } SE ee st et<br>xo - ROa i ie le<br>4<br>10<br>aa<br>2 a<br>0 ft tT tf 1 Pot | |<br>0 20 40 60 80 100 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>


10 

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AIKB40N65DH5 

**==> picture [475 x 313] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 EEA Etre HEE PUTIN ETT TATE LETTE TE T<br>PT TTT TT UN<br>Se CCI CCEInE CCE rer TTT 1 ATT ee TT ue ae ma<br>S LTTATTh) S E e<br>WW D = 0.5 er<br>O Pll ins EA EEN aa PSS<br>0.2<br>2 Ve. O N/A<br>TE<br>| |) UE 0.1 yy iy 2 em D = 0.5<br>0.1<br>oa an, a 0.05 Tt ae a lime Al ™ 0.2<br>2 err Ae Ly d ill<br>0.02 0.1 0.1<br>Z Bee ee)ay), Aza atill | = 7AY/ (lillies| | Ti TT<br>0.01 0.05<br>or eo ema Z SSS SoSECS EECA<br>eeeA single pulse Tee 0.02<br>= TT 0.01 EH<br>b Se se Ul = eT + Cer FN<br>2 LL ee P(E single pulse TTT<br>0.01 KA fi ]<br>6 Eye GHG fe 0.01 | PALE Eee Ho]<br>et St ee e e<br>0 i: 1 2 3 4 5 6 Ea i: 1 2 3 4<br>ri[K/W]: 5.5E-3 0.142332 0.228875 0.212006 0.017599 2.1E-3 ri[K/W]: 0.37339 0.46711 0.56421 0.39557<br>τ i[s]: 1.3E-5 2.7E-4 1.8E-3 8.8E-3 0.13885 2.05094 τ i[s]: 1.3E-4 9.0E-4 10.0E-3 0.04909<br>rs | ||<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. Figure 18.<br>( IGBT D = t p/T)  transient thermal impedance podeunction transientof pulse eetwidt!  impedance as a<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


Figure 18. ( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
160 1.4<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>150 Tvj = 150°C, IF = 20A Tvj = 150°C, IF = 20A<br>1.2<br>140<br>_ SE TT E ELI.  ie<br>3. _-<br>PN a<br>130<br>= “omar<br>1.0<br>FTL ce -<br>NETL<br>120<br>: dé<br>ef . :<br>NA~ ><br>110 0.8<br>o) 8 EEE<br>:eto rs:<br>100<br>Ww<br>0.6<br>ee:> 90 W —_ |<br>80<br>PR Dee<br>0.4<br>i<br>70<br>60 0.2<br>Pt EE ey [Ey]<br>500 700 900 1100 1300 1500 1700 1900 2100 500 700 900 1100 1300 1500 1700 1900 2100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. 

( _V_ R=400V) 

Figure 20. 

( _V_ R=400V) 

11 

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AIKB40N65DH5 

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**----- Start of picture text -----**<br>
24 0<br>23 Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A Tvj = 150°C, IF = 20A<br>22 a re -50 =e<br>ee 21 ee ee ee a e<br>a 20 ee e e -100<br>19<br>eo o{[ tt} ioe | | pe<br>re 18 eeee -150<br>a 17<br>16<br>eee EN<br>-200<br>15<br>6 | [4 | | Ue | es SS =<br>14<br>Pee LENSE<br>-250<br>13<br>wo Te | |Cog ae<br>12<br>one eee<br>-300<br>11<br>ae 4a —<br>PC 10<br>9 Yi | | | | | | | -350<br>8<br>7 Pot | tT -400<br>500 700 900 1100 1300 1500 1700 1900 2100 500 700 900 1100 1300 1500 1700 1900 2100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


Figure 21. 

Figure 22. 

( _V_ R=400V) 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
60 2.50<br>Tvj = 25°C IF = 10A<br>Tvj = 150°C IF = 20A<br>= 2.25 F IF = 40A E]<br>50<br>/<br>2.00<br>= 40 Ww<br>: foods S S<br>i < 1.75<br>PLA de Ee<br>8 30 a 1.50<br>2<br>a<br>/<br>1.25<br>: 20 / 2<br>1.00<br>10<br>YE Gere<br>0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>


12 

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## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO263-3** 

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



Datasheet 

V�2.1 2019-10-17 

AIKB40N65DH5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

V�2.1 2019-10-17 

Datasheet 

AIKB40N65DH5 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKB40N65DH5 

## **Revision:�2019-10-17,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|



15 

V�2.1 2019-10-17 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKB40N65DH5ATMA1/igbt-74-a-165-v-250-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikb40n65dh5atma1/transistor-igbt-650v-74a-to-263/dp/3582442)
---

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