# IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3582441/)

**URL**: https://novapart.co/products/AIKB40N65DF5ATMA1/igbt-74-a-16-v-250-w-650-to-263-d2pak-3-pins
**SKU**: AIKB40N65DF5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4000
**Stock**: 10+
**Lead Time**: 281 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 74A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582441/)

## AIKB40N65DF5 

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**----- Start of picture text -----**<br>
High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>¢ Low gate charge Q G<br>E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Dynamically stress tested C<br>* Qualified according to AEC-Q101<br>¢ Green package (ROHS compliant) Ol<br>¢« Complete product spectrum and PSpice Models: ron ‘nf<br>http://www. infineon.com/igbt/ : GL 7. op<br>026<br>a,<br>Applications:<br>¢ Off-board charger f<br>¢ On-board charger Fan)<br>G<br>*« DC/DC converter A<br>¢ Power-Factor correction<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB40N65DF5|650V|40A|1.6V|175°C|AK40EDF5|PG-TO263-3|



Datasheet www.infineon.com 

2019-10-17 

AIKB40N65DF5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||37.0<br>22.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.60|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|90.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|166|-|ns|
|Fall time|_t_f||-|6|-|ns|
|Turn-on energy|_E_on||-|0.39|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.50|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|183|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1098A/µs|-|73|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.53|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-228|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1251A/µs|-|35|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-667|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|203|-|ns|
|Fall time|_t_f||-|4|-|ns|
|Turn-on energy|_E_on||-|0.53|-|mJ|
|Turn-off energy|_E_off||-|0.21|-|mJ|
|Total switchingenergy|_E_ts||-|0.74|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|243|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.24|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1087A/µs|-|114|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.20|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-203|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1119A/µs|-|61|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.57|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-425|-|A/µs|



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**----- Start of picture text -----**<br>
300 80<br>70<br>250 TH) NA<br>60 \<br>\ BNE<br>200<br>50<br><x ia<br>PLN PEE<br>; 150 \ pt 40 NO<br>30<br>PONE EEE NG<br>100<br>a<br>20<br>50<br>SanDNG Soeeene<br>10<br>PEN EEE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE = 20V VGE = 20V<br>18V 18V<br>/ |<br>100 15V 100 15V<br>TW] [SS<br>12V 12V<br>10V 10V<br>80 80<br>sf) 8V ie | 8V Sy<br>7V 7V<br>60 60<br>6V 6V<br>5V 5V<br>40 40<br>20 20<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>|  fA |_  ENT<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Datasheet 

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## AIKB40N65DF5 

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**----- Start of picture text -----**<br>
120 2.50<br>Tvj = 25°C IC = 10A<br>Tvj = 150°C IC = 20A<br>2.25 IC = 40A<br>100<br>z<br>s<br>Ee 2.00<br>_ |<br>80<br>Pa rE<br>im <x 1.75<br>oe ep)<br>Ooa 60 fFEe 1.50 uo"<br>ua 5FE 1.25 f=<br>40<br>: pe fo<br>1.00<br>20<br>0.75<br>7<br>BO4nEe Eas<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage as<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>| 1 td(off) a a ee ee ee | td(off) a ee ee ee ee en<br>I tf p o | tf ee ee = eee eee<br>td(on) td(on)<br>tr tr<br>F p FE be<br>| a ee ee ee ee | fp,<br>z | Ta =<br>— 100 a cs 100 a<br>ip) Pe a es ee<br>uw a ee ee ee eee ip) a eseee<br>= a a eh he a a en<br>- poa edee ee ee = aa eeee eeee eeaeee e ee eee<br>Q pgs | | __ Q eeee<br>so are ne eelrea<br>Een ee7 E eea 7<br>2) 10 a 2) 10 a 2 es<br>- a a - Sa A<br>po po A<br>a a a 72 a<br>a es ee ee ys a ee ee ee ee<br>a p e | |<br>a Po | ot tT | dT<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>


Figure 7. 

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**----- Start of picture text -----**<br>
T vj =150°C, V CE=400V,<br>**----- End of picture text -----**<br>


Figure 8. Typical **resistor** 

_T_ vj =150°C, _V_ CE=400V, 

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**----- Start of picture text -----**<br>
V GE =15/0V, r G=15 Ω<br>Figure E)<br>**----- End of picture text -----**<br>


_V_ GE =15/0V, _I_ C Figure E) 

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**----- Start of picture text -----**<br>
1000 aa 5.5<br>| 1 ttd(off)f a aee aee ee typ.min.<br>I td(on) a eeee ee ee eee _ 5.0 = max.<br>tr<br>a Os [<¢] 4.5 Wee,<br>a ee J] ~ss<br>e) ‘s<br>2f | || 4§ .<br>= 100 a es a 4.0 EE —_| ~<br>ip) a i ~<br>im poa a a (e) — SA s<br>- es ee Wy 3.5 we \<br>= aa ~<br>3.0<br>e e<br>= ee 4 = ~ —_<br>S2)7 10 a eS Ww:7 2.5 ~ ~~ \ \Y<br>po wi XN<br>es \<br>a i ee ee ro) 2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>15 2.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>12 1.6<br>n n ra<br>Lu Lu ?<br>7) 7) 7<br>o ep) ”<br>e) e) “<br>—! 9 —! 1.2<br>> > a<br>im “ m7 oo a7<br>Zz v4 Zz ¢<br>Lu ¢ Ww pod co<br>oOZz 6 ¢ a (VU)Z 0.8 ° o -7<br>= “ 7 = “ -<br>O 7 a O 7 -<br>E “ , E -<br>a“a7<br>a<br>“ - 7 —<br>3 7 0.4 |<br>a a><br>-t-_<br>“Lo -nee a —_—<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.2 1.4<br>Eoff Eoff<br>Eon Eon<br>Ets 1.2 Ets<br>oy oy<br>0.9<br>on on 1.0<br>Ww Ww<br>7) 7)<br>o —-| oO<br>—! "7 o o<br>> -" > 0.8 ?<br>na na “7<br>Ww 0.6 > Ww Prat<br>) -- _-— ) 0.6 oe -<br>Zz _ =_— Zz oe -<br>= _ L “7 -<br>Ee — F Ee 0.4 7“ a “ -<br>a 0.3 3 =<br>0.2<br>ee - ————<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>——s-rnv V CC [ Cies 7<br>—_— V CC = / Co(er)<br>14 , 1E+4 I Coes<br>Cres<br>a<br>12 fi a<br>=. | a a a<br>Ww<br>1000<br>FE 10 A 2 EE<br>O> uw SEa ss<br>Vs 2 a ee ee ee ee eee eee<br>ke 8 —< pot tT<br>100<br>E _/ S of‘<br>i oO EEE<br>6 O a<br>Mux [__ <- oSSRSa ee re re he ee ae ee ree<br>o RO<br>4<br>10<br>aa<br>2 a<br>0 fit, td 1 Pot | |<br>0 20 40 60 80 100 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>


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**==> picture [475 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>= a  TT 1 CTA ea T T<br>eA<br>Ssz PT TT TeterATENTTT TTTTMM) S= PEER iTTTwallre<br>D = 0.5<br>: TN ae TT — SS<br>OA BEC EHC<br>0.2<br>Z HHH<br>eS ay 0.1 a Z mmaOMS D = 0.5<br>0.1<br>oO= etor eA 0.05 | Wyalllhij| 0.2<br>0.02 0.1 0.1<br>Z Salle / eal CCC Co) = VO Allin<br>0.01 0.05<br>= or eo ema - Ee<br>single pulse 0.02<br>= et A I TM) Ser) ee aml 0.01 Hi cei emma<br>nV 2 ea = CSS TT<br>single pulse<br>E 0.01 A |= AA 1/0<br>Bs 0.01 FAMICTIIETTI ju ET<br>F A ad Fn |<br>A AE AE ITT ol CHM CCC CC<br>i: 1 2 3 4 5 6 i: 1 2 3 4<br>ri[K/W]: 5.5E-3 0.142332 0.228875 0.212006 0.017599 2.1E-3 ri[K/W]: 0.30198 0.50383 0.66635 0.32819<br>| τ i[s]: 1.3E-5 2.7E-4 1.8E-3 8.8E-3 0.13885 2.05094 CREAT PE τ i[s]: 7.0E-5 2.9E-4 3.9E-3 S 0.01434<br>| | ee |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. Diode function ( _D_ = _t_ p/T) 

**==> picture [236 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
180 |<br>Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A<br>160<br>=<br>140<br>kb _<br>z 120 —<br>m7 ee<br>rdo 10080 ~~<br>60<br>40<br>20<br>500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>


Figure 19. Typical of diode ( _V_ R=400V) 

**==> picture [235 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 |<br>Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A<br>1.4<br>S<br>1.2<br>= -—<br>:<br>a 1.0<br>fe)<br>0.8<br>im<br>0.6<br>0.4<br>0.2<br>500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 20. 

( _V_ R=400V) 

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AIKB40N65DF5 

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**----- Start of picture text -----**<br>
30 0<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A Tvj = 150°C, IF = 20A<br>25 -100<br>= a<br>i 7<br>om 7 vo | =<br>s76<br>O<br>20 -200<br>ra, “7 = ~<br>;<br>7 - - Ss = —<br>7 x —<br>oYO 15 7 —| QooO -300 ~~ —=<br>or 2<br>Ww 3<br>> [.]<br>i<br>me 10 aa -400<br>5 -500<br>500 1000 1500 2000 2500 500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>60 2.50<br>Tvj = 25°C IF = 10A<br>Tvj = 150°C IF = 20A<br>2.25 IF = 40A<br>50<br>z i / S 2.00<br>= 40 Ww<br>1.75<br>si g<br>5O<br>°<br>: 30 : 1.50 P| | ft<br>2 a<br>S$ / a<br>= y] =a 1.25<br>: 20 ) Oep<br>1.00<br>10<br>of a<br>0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

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AIKB40N65DF5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO263-3** 

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**==> picture [43 x 105] intentionally omitted <==**

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



Datasheet 

V�2.2 2019-10-17 

AIKB40N65DF5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [189 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

V�2.2 2019-10-17 

Datasheet 

AIKB40N65DF5 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKB40N65DF5 

## **Revision:�2019-10-17,�Rev.�2.2** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2019-06-07|Final Datasheet|
|2.2|2019-10-17|updated fig.15|



15 

V�2.2 2019-10-17 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKB40N65DF5ATMA1/igbt-74-a-16-v-250-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikb40n65df5atma1/transistor-igbt-650v-74a-to-263/dp/3582441)
---

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