# IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3582440/)

**URL**: https://novapart.co/products/AIKB30N65DH5ATMA1/igbt-55-a-165-v-188-w-650-to-263-d2pak-3-pins
**SKU**: AIKB30N65DH5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9100
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 188W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 55A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582440/)

## AIKB30N65DH5 

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High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft anti-parallel diode<br>Features and Benefits: C<br>High speed H5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>¢ Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>« Dynamically stress tested<br>* Qualified according to AEC-Q101 Ol<br>¢ Green package (ROHS compliant) b = ‘nf<br>¢« Complete product spectrum and PSpice Models: d GL 7. op<br>http://www.infineon.com/igbt/ ee<br>Applications:<br>¢ Off-board charger Fi<br>G<br>¢ On-board charger fl<br>¢« DC/DC converter<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB30N65DH5|650V|30A|1.65V|175°C|AK30EDH5|PG-TO263-3|



Datasheet www.infineon.com 

2019-10-17 

AIKB30N65DH5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||55.0<br>35.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||37.0<br>22.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||188.0<br>93.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|30.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|10|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|184|-|ns|
|Fall time|_t_f||-|24|-|ns|
|Turn-on energy|_E_on||-|0.32|-|mJ|
|Turn-off energy|_E_off||-|0.09|-|mJ|
|Total switchingenergy|_E_ts||-|0.41|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|188|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.14|-|mJ|



## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1046A/µs|-|65|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.48|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-262|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=774A/µs|-|40|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.26|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-560|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|203|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.44|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.55|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|215|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.20|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=967A/µs|-|97|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.87|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|15.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-218|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=870A/µs|-|61|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-394|-|A/µs|



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200 60<br>180<br>FEES 50 NOT<br>160 NAtty ON<br>140<br>e -XPET 2 EN<br>40<br>120<br>100 30<br>Nee: \<br>80<br>PFEPNESE TENE<br>20<br>et] 60 oF IN 8 \<br>40<br>PEASE 10 PETES<br>20<br>aN LN<br>0 P| Et [LIN] 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br>


> Figure 1. Power **temperature** ( _T_ vj ≤ 175°C) 

Figure 2. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) 

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90 90<br>VGE=18V<br>80 ae a 80 YY<br>15V<br>70 12V 70 VGE=18V<br>10V 15V<br>60 60<br>8V 12V<br>7V 10V<br>50 50<br>6V 8V<br>40 5V 40 7V<br>4V 6V<br>30 30<br>5V<br>20 20 4V<br>10 10<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=150°C) 

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90 2.50<br>IC = 7.5A<br>Tvj = 25°C IC = 15A<br>8070 “T Tvj = 150°C T 2.25 IC = 30A<br>_ fpf| 3E 2.00<br>60<br>Pa rE<br>im <x 1.75<br>5 50 | th<br>w oa 1.50<br>: 40 =rm<br>a FE 1.25<br>A /<br>30<br>9 / oe<br>1.00<br>20 O<br>/<br>/ 0.75<br>10<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=20V) 

Figure 6. Typical a function ( _V_ GE=15V) 

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**----- Start of picture text -----**<br>
1000 a 1000 a SS SS ES ES<br>| 1 td(off) poa | td(off) Ee ee<br>I tf pot TT | tf a ee ee ee ee<br>td(on) td(on)<br>tr tr<br>| p | ft | tT | a eee<br>Pitot | | | | tT | | ott | | ht<br>100 100<br>itty ttt ys P e<br>ip) po eT (Sa ee<br>uw poa a hket ip)<br>= Nae a a<br>- aa a aekes eeeeee ee = aa eeeeeeeeeee<br>Q eee eee pf | ee em Teeter |<br>=tLe_ = eee- Tet<br>E E aay<br>pie TTT yg Per<br>2) 10 2) 10 Ss<br>- ee - ER<br>ee ER<br>a<br>a ee ee ee ee ee ee ee Se s e ee e e<br>ee ee ee ee eee a De De<br>P| | | | dt Po | ot tT | dT<br>1 1<br>0 10 20 30 40 50 60 70 80 90 100 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>


Figure 7. 

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Datasheet<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 8. Typical **resistor** 

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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =15A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000 aEsa Rs 5.5<br>| td(off) a ee ee ee typ.<br>tf min.<br>td(on) 5.0 max.<br>I a eeee<br>tr<br>n O<br>4.5<br>e —_—_—_————e ee b A<br>> <<br>ry= 100 a e es e 1a 4.0 _—~ “a, ss) .<br>on a i x<br>im a Oo . a<br>- a Ww 3.5 NN ‘<br>3.0<br>Boo eaesshesseszscocgocsccgeccocteeeef ~ \.<br>:= =e3 sy ~~ NON\<br>2) 10 a eS = 2.5<br>7 a 7 ~<br>poaaa wi NX<br>aeseo) 2.0 Ny \<br>1.5<br>\<br>\<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

Figure 10. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V, ( I C=0.3mA)<br>I C =15A, r G=23 ,Dynamic test circuit in Figure<br>E)<br>6.0 1.1<br>Eoff Eoff<br>5.5 Eon 1.0 Eon<br>Ets f Ets 7<br>a Fj } tt fe<br>5.0 ee ee<br>ee e e 0.9<br>= 4.5 7Ate= | e,<br>Bt tt 0.8 ’<br>} 4.0 v2 ¢<br>re ; ett 0.7 | eft<br>> a 3.5 7 =<br>0.6<br>eg ft/ 25 7 7<br>3.0<br>: 4 |<br>ef v4 7 z 0.5 o -<br>zw Sor BL ee eT<br>2 | 2.5 Bee<br>Zz ; Se<br>= 4 Zz 0.4 A 2<br>O 2.0 | [|||] 7YE | | OSs eo<br>PA Oe 0.3 ee<br>1.5<br>A 0.2 —<<br>° 1.0 C7 | baer ye | | e<br>ae A —<br>0.5 0.1<br>ean pt tee y | tt<br>ee<br>0.0 0.0<br>tT | CL<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω ,Dynamic test circuit in V GE =15/0V, I C =15A, Dynamictest circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.7 0.7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets a“<br>0.6 0.6<br>of<br>5 _eor ay oo<br>Wwo 0.5 Luo 0.5 ° 7? a<br>o Bo “ oo<br>° -_ - ~ —_ o a“a<br>> 0.4 = 5 0.4 7<br>2 -- q a<br>Ww eo Ww peat yr<br>fi 0.3 — fi 0.3 a 4<br>= = -<br>S) S) -<br>EE<br>0.2 0.2<br>n<br>n a<br>0.1 0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E) 

Figure 14. 

(inductive load, _T_ vj = 150°C, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E) 

**==> picture [474 x 322] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>— V CC a30V [ Cies 7<br>V CC Co(er)<br>14 1E+4 I= Coes (2<br>7/ H Cres oe<br>I LS eS<br>_ 12 |; aa a<br>=Ww 7 e e eee<br>1000<br>F 10 s _———<br>O> VZ uw aSS<br>Vs / 2 a a ee ee ee ee ee<br>ke 8 VA —< p ot TE<br>100<br>E Bae Aaa 5 f | | | | |<br>tt 6 / oO E E<br>Mu a SD rePS ee a<br>x SR a in leti<br>4<br>10<br>aa<br>2 a<br>0 PLE EE 1 Pot | |<br>0 10 20 30 40 50 60 70 80 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
S 1 a eee at cc eso ee es |e<br>4 etart eee tn || = wr<br>1<br>we | JH |<br>9 Se | S P<br>ca SeR=a D = 0.5 2 SAU 7 2A D = 0.5<br>0.2 0.2<br>AR 0.1 ITI) 2 7<br>== I im 0.1 IMLI Poame Ti 0.1 ILU<br>~¢ eS SSE) Ya<br>=t YTBP TT AaAe 0.05 iCMTTTTT oS<t ee yAaesLy|LTCo // 0.05<br>0.02 0.02<br>a eeco /f | i!<br>0.01 0.01<br>: en 0.1 | AE ,<br>single pulse single pulse<br>i OT A Tat : pce Etro —C EC<br>Dn 0.01 ralWyqf| paiee l ee iDn |oen/a| Ty (Ba 2a eelSIE<br>FRSC H  GT -He  Eeee H  |<br>- ATCT COTM oie cette fl) EfCN Le ott<br>A ooo AAA LA TA | ool<br>A || i: 1 PET 2 3 CPT 4 5 6 a H i: EEEPP 1 2 3 4<br>ri[K/W]: 7.5E-3 0.179623 0.30962 0.262097 0.022228 2.2E-3 ri[K/W]: 0.36791 0.49101 0.61851 0.32287<br>τ i[s]: 1.4E-5 2.6E-4 1.6E-3 8.2E-3 0.126279 2.036965 τ i[s]: 1.1E-4 4.1E-4 4.2E-3 0.01769<br>d LT [ LEP PP i<br>0.001 0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. Diode function ( _D_ = _t_ p/T) 

**==> picture [476 x 322] intentionally omitted <==**

**----- Start of picture text -----**<br>
140 1.2<br>Tvj = 25°C, IF = 15A Tvj = 25°C, IF = 15A<br>Tvj = 150°C, IF = 15A Tvj = 150°C, IF = 15A<br>120<br>1.0<br>2 ~ im<br>= 100 \. <<br>0.8<br>= ~. ~ > i<br>(afe)i 80 oe~~. >&g ~<br>Luie) aWw 0.6<br>60<br>uw ><br>ia-Wwa<br>0.4<br>Se eee<br>40<br>20 0.2<br>500 1000 1500 2000 2500 500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/s] di F /dt , DIODE CURRENT SLOPE [A/s]<br>Figure 19. Typical reverse recovery time as a function Figure 20. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
22.5 0<br>Tvj = 25°C, IF = 15A Tvj = 25°C, IF = 15A<br>Tvj = 150°C, IF = 15A -50 Tvj = 150°C, IF = 15A<br>—<br>20.0<br>’ -100 ee<br>= a 77)<br>kK a =<br>17.5<br>WW 34 x= -150<br>a z“<br>5<br>O ye aro) -200 IN _~<br>15.0<br>ing 7 3°<br>Ww> 7 py a ‘=2 -250 aNNOa eee<br>12.5<br>nd 7 a -300<br>no} -350 ><br>i 10.0 [e}<br>-400<br>arti<br>7.5<br>-450<br>5.0 -500<br>500 1000 1500 2000 2500 500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>90 2.50<br>Tvj = 25°C IF = 7.5A<br>Tvj = 150°C IF = 15A<br>80 a 2.25 E IF = 30A Lit<br>/ //<br>70<br>/ 2.00<br>x =.<br>kK 60 i Lu<br>1.75<br>si g<br>5 50 e)<br>6): / :a 1.50 P| | tt<br>e$ 40 | E<br>=<br>1.25<br>30 ~<br>1.00<br>|<br>20<br>0.75<br>10<br>=<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

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AIKB30N65DH5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO263-3** 

**==> picture [112 x 124] intentionally omitted <==**

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



Datasheet 

V�2.1 2019-10-17 

AIKB30N65DH5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [189 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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AIKB30N65DH5 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKB30N65DH5 

## **Revision:�2019-10-17,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|



15 

V�2.1 2019-10-17 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKB30N65DH5ATMA1/igbt-55-a-165-v-188-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikb30n65dh5atma1/transistor-igbt-650v-55a-to-263/dp/3582440)
---

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