# IGBT, 55 A, 1.6 V, 188 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3582439/)

**URL**: https://novapart.co/products/AIKB30N65DF5ATMA1/igbt-55-a-16-v-188-w-650-to-263-d2pak-3-pins
**SKU**: AIKB30N65DF5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9100
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 188W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 55A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582439/)

## AIKB30N65DF5 

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**----- Start of picture text -----**<br>
High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>¢ Low gate charge Q G<br>E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Dynamically stress tested C<br>* Qualified according to AEC-Q101<br>¢ Green package (ROHS compliant) Ol<br>¢« Complete product spectrum and PSpice Models: ron ‘nf<br>http://www. infineon.com/igbt/ : GL 7. op<br>026<br>a,<br>Applications:<br>¢ Off-board charger f<br>¢ On-board charger Fan)<br>G<br>*« DC/DC converter A<br>¢ Power-Factor correction<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB30N65DF5|650V|30A|1.6V|175°C|AK30EDF5|PG-TO263-3|



Datasheet www.infineon.com 

2019-10-17 

AIKB30N65DF5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||55.0<br>35.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||37.0<br>22.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||188.0<br>93.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Defined by design. Not subject to production test. 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|30.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|25|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|188|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.33|-|mJ|
|Turn-off energy|_E_off||-|0.10|-|mJ|
|Total switchingenergy|_E_ts||-|0.43|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|194|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.12|-|mJ|



## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1005A/µs|-|67|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.44|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-232|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=755A/µs|-|39|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.24|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-536|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|208|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.41|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.52|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|233|-|ns|
|Fall time|_t_f||-|14|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.19|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=980A/µs|-|92|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.76|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-205|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=740A/µs|-|63|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.48|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.1|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-362|-|A/µs|



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200 60<br>180<br>To 50 Qe<br>160 NNN<br>140<br>e -XPET 2 EN<br>40<br>120<br>100 30<br>PL NEE ys<br>80<br>PFERAEA EEN<br>20<br>PLN<br>60<br>40<br>PN 10 NS<br>Pee<br>20<br>oN<br>0 0<br>25 50 75 100 125 N 150 Y 175 25 LEE 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>90 90<br>VGE = 20V<br>VGE = 20V<br>80 80 18V<br>18V<br>15V<br>70 a 15V a 70 ENG 7a<br>A 12V NO Aa<br>12V<br>10V<br>60 60<br>10V<br>8V<br>8V<br>50 50 7V<br>7V<br>6V<br>40 6V 40<br>5V<br>5V<br>30 aN /Ane 30 WEL<br>20 20<br>10 10<br>fv> | |foe—<br>0 0<br>Zavene 4en ee<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=150°C) 

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90 2.50<br>Tvj = 25°C IC = 7.5A<br>Tvj = 150°C IC = 15A<br>80 2.25 IC = 30A<br>EO] of | E J tit<br>70 PT feef O6E 2.00 7<br>60<br>Pa E 1.75 -—"<br>a om<br>50<br>a Ee 1.50<br>9 40 a<br>1.25<br>30<br>fe 4 laSo fo<br>O 1.00<br>20<br>0.75<br>10 7<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=20V) 

Figure 6. 

( _V_ GE=15V) 

1000 

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td(off)<br>tf<br>a fn td(on) A<br>tr<br>pst | | [nn en——<br>td(off)<br>a tf e e<br>100<br>td(on)<br>1 | tr a ee eee — 100 |<br>2 __ eee<br>@S | e R gg Ee<br>a e e = a ee ee ee eee<br>ee Per a ee es Seae<br>¢Seee =o eeee ccc<br>10<br>= a ee ee eee = 10 eoe 7 e<br>B a ee ee eee eee - a a<br>a o e<br>ee a a<br>FP | ft | | tt<br>1 1<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Figure 8.<br>Typicalcollectorswitcningcurren  times as a function of Typical resistor switching times as a function of gate<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =15A,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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1000 Es | 1a td(off) a a Rs a ee a ee ee 5.5 —_—_—_— typ.min.<br>tf<br>I td(on) 5.0 max.<br>tr<br>re aee sl<br>4.5<br>_——$—$——$ $$ee—$ ————— — FE i S s<br>ee<br>100 4.0<br>ip) a i<br>im poa a a (e) — SS\<br>3.5<br>ee eee eee<br>F es ee Mu ~ NY ‘<br><=bee - NON<br>3.0<br>zo Screg ~ Naan’<br>= = my EF N \<br>2)7 10 aa eS = 2.5 aN \<br>po Ww<br>ee \<br>a eseo) 2.0 \<br>1.5<br>\<br>\<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.3mA)<br>I C =15A, r G=23 ,Dynamic test circuit in Figure<br>E)<br>5.5 1.2<br>Eoff Eoff<br>5.0 Eon 4 1.1 Eon 4<br>Ets Ets<br>ELLY Eee<br>4.5 eT PTT 1.0 7<br>EY) e eter<br>z& /i& 0.9 a e?<br>4.0<br>op)7) /, y op)7) 0.8 ?<br>Ooa 3.5 a7 @) oe<br>eee feae<br>> 0.7<br>3.0<br>: ¢ > 7<br>0.6<br>Lu AA 8 | [ee] |<br>Zz / Ww 7<br>t 2.5 7 Zz : -<br>O ip a 0.5 ae<br>2 / oO ;<br>2.0<br>5 7 | | 85B 0.4 eePe<br>ee 1.5 Y A 3 L<br>7 ee 0.3 ee<br>Sf 1.0 T\7 A a a a Z<br>Y a 0.2<br>0.5 Bee“A — ae eee 0.1 aae<br>ee eee<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω ,Dynamic test circuitin V GE =15/0V, I C =15A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>


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0.7 0.7<br>Eoff Eoff<br>Eon Eon<br>0.6 Ets v2 0.6 Ets a<br>4 a<br>> “ = “<br>E E a<br>op)Ww 0.5 ¢a op) 0.5 ¢<br>io) = 7 Ww 7 7<br>a) -—_" 7 ep)a) ¢?<br>a<br>> 0.4 0.4<br>G} — > wr Z<br>ff “7| ffO a: 7<br>ii 0.3 a 0.3 a- a 7<br>g<br>L; Leo y<br>0.2 0.2<br>n i n<br>0.1 —————}___}|_. | 0.1 _——————__—_— ——<br>0.0 0.0<br>PP [EEL] EE } pre y<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =15A, r G=23 ,Dynamic test circuit in I C =15A, r G=23 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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16<br>— V CC a30V<br>V CC =<br>eA<br>14 7<br>/<br>_ 12 j;<br>=Ww V7<br>F 10<br>O> V7<br>Vs<br>ke 8 4,<br>: nw,<br>WWLuul 6 f —~<br>x<br>o<br>4<br>2 PLE<br>0 EEL<br>0 10 20 30 40 50 60 70 80<br>Q GE , GATE CHARGE [nC]<br>Figure 15. Typical gate charge<br>( I C=30A)<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
[ Cies ——__| | | | |<br>Co(er)<br>1E+4 I= Coes (EET<br>H Cres [oo<br>e e<br>a<br>a ee eeeee<br>1000<br>s _———<br>uw aSSee<br>2 a eeee ee<br>—< p o<br>100<br>a<br>ooO) S\NaNe<br>SR rr rs ered ee tt et es<br>|ee<br>Nee<br>10<br>a<br>aa<br>a<br>1 | | | | | |<br>0 50 100 150 200 250 300 350 400<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 16. Typical capacitance as a function of<br>collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>**----- End of picture text -----**<br>


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**==> picture [475 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>= Eee | 1 LIME Iee aar Til<br>CTT<br>5)Z 1 Mana CO on CTI aeCWE, ‘ ETL<br><x Trin Lee LTT CE CTT) 2 rm CI C ETTEEE l<br>a fs ‘A single pulse <x B iy a single pulse<br>0.01 0.01<br>:= 0.1 HHT?hy il 0.02 iit a: ec?ye ll 0.02 LUT<br>Seed ete aan 0.05 Ear = 0.1 Ad 0.05<br>0.1 0.1<br>Wiwa ae?TI ACAll| || 0.2D = 0.5 TTPi) 6 P/Nmit) /A 0.2D = 0.5 nlmill<br>b wWifd b SE aT aE!<br>UIA 0.01 ALT) 0.01 A ETTE<br>FE FA ly] & Cee iH<br>- Pt ATI TT PE Tchr, co=tere — ill  - CCTM iat Co=te/Re _ Il]<br>PAULI TTT TTT Vn CO CoT ool<br>A || i: 1 PET 2 3 CPT 4 5 6 n nn i: 1 2 3 4<br>ri[K/W]: 7.5E-3 0.179623 0.30962 0.262097 0.022228 2.2E-3 ri[K/W]: 0.39889 0.45435 0.58367 0.36365<br>τ i[s]: 1.4E-5 2.6E-4 1.6E-3 8.2E-3 0.126279 2.036965 τ i[s]: 1.4E-4 8.7E-4 9.2E-3 0.04412<br>0.001 4 re LE | e 0.001  a6 LE TT |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. 

( _D_ = _t_ p/T) 

**==> picture [476 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
130 1.1<br>Tvj = 25°C, IF = 15A Tvj = 25°C, IF = 15A<br>Tvj = 150°C, IF = 15A Tvj = 150°C, IF = 15A<br>120<br>= 1.0 a<br>> 110 fi<br>& \ am 0.9<br>100<br>keeee: eee—<br>0.8<br>o N > -<br>Luef 90 NM~~ 8w ~ a 7<br>rt ~ is 0.7<br>80<br>Ww ~ x<br>0.6<br>BIN 70 8<br>ag Ww<br>0.5<br>ee eee<br>60<br>0.4<br>50<br>40 0.3<br>400 800 1200 1600 2000 2400 400 800 1200 1600 2000 2400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. 

( _V_ R=400V) 

Figure 20. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
25.0 0<br>Tvj = 25°C, IF = 15A Tvj = 25°C, IF = 15A<br>Tvj = 150°C, IF = 15A Tvj = 150°C, IF = 15A<br>22.5 -50<br>20.0 -100<br>o ra N<br>oO= 17.5 7 xo)— -150 \<br>7 £<br>v 15.0 2 -200<br>)7 ea © ,<br>a 12.5 ma a. -250 S<br>n 7 A 3()<br>10.0 -300<br>if Z SN<br>, 7.5 Zn -350 Pf op ™é~<br>5.0 -400<br>400 800 1200 1600 2000 2400 400 800 1200 1600 2000 2400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>90 2.50<br>Tvj = 25°C IF = 7.5A<br>Tvj = 150°C IF = 15A<br>80 2.25 IF = 30A<br>EJ oy ) EB<br>j /<br>70<br>2.00<br>= 60 Ww<br>1.75<br>si g<br>50<br>6): /i :> 1.50 P| | tt<br>ingQ 40 / Q2<br>$ [ <x<br>=<br>30 (e) 1.25 —_|<br>1.00<br>20 © |<br>0.75<br>10 efit} LE<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>


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**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO263-3** 

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



Datasheet 

V�2.1 2019-10-17 

AIKB30N65DF5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [189 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

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AIKB30N65DF5 

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## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIKB30N65DF5 

## **Revision:�2019-10-17,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|



15 

V�2.1 2019-10-17 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKB30N65DF5ATMA1/igbt-55-a-16-v-188-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikb30n65df5atma1/transistor-igbt-650v-55a-to-263/dp/3582439)
---

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