# IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2986332/)

**URL**: https://novapart.co/products/AIKB20N60CTATMA1/igbt-40-a-15-v-156-w-600-to-263-d2pak-3-pins
**SKU**: AIKB20N60CTATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.6800
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:156W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 156W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986332/)

## AIKB20N60CT 

## TRENCHSTOP[TM] 

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TM<br>**----- End of picture text -----**<br>


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Features: C<br>« Automotive AEC Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>¢ Maximum Junction Temperature 150°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>¢ Positive temperature coefficient in V CE(sat)<br>« Low EMI<br>C<br>«*¢ TRENCHSTOPGreenLow GatePackageCharge_ M and Fieldstop technology for 600V roeCG): ‘nf<br>applications offers: Z C75 op<br>- very tight parameter distribution <6?<br>- high ruggedness, temperature stable behavior “e<br>- very high switching speed -<br>Applications:<br>G<br>¢ Main inverter<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB20N60CT|600V|20A|1.5V|150°C|AK20DCT|PG-TO263-3|



Datasheet www.infineon.com 

2017-02-09 

AIKB20N60CT 

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## TRENCHSTOP[TM] �Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP[TM] �Series 

## **Maximum�Ratings** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turnoffsafeoperatingarea_V_CE≤600V,_T_vj≤150°C1)|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C|_P_tot||156.0|W|
|Operating junction temperature|_T_vj|-40...+150||°C|
|Storage temperature|_T_stg|-40...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.90|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



> 1) tp ≤ 1µs 

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## TRENCHSTOP[TM] �Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|1.50<br>1.85|2.05<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|1.65<br>1.65|2.05<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.29mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|-<br>550|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|11.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1100|-|pF|
|Output capacitance|_C_oes||-|71|-||
|Reverse transfer capacitance|_C_res||-|32|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|183|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=131nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|199|-|ns|
|Fall time|_t_f||-|42|-|ns|
|Turn-on energy|_E_on||-|0.31|-|mJ|
|Turn-off energy|_E_off||-|0.46|-|mJ|
|Total switchingenergy|_E_ts||-|0.77|-|mJ|



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## TRENCHSTOP[TM] �Series 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=20.0A,<br>_di_F_/dt_=880A/µs|-|41|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.31|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|711|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=131nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|217|-|ns|
|Fall time|_t_f||-|70|-|ns|
|Turn-on energy|_E_on||-|0.47|-|mJ|
|Turn-off energy|_E_off||-|0.60|-|mJ|
|Total switchingenergy|_E_ts||-|1.07|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=600V,<br>_I_F=20.0A,<br>_di_F_/dt_=800A/µs|-|201|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.28|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|481|-|A/µs|



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## ~~Series~~ TRENCHSTOP[TM] 

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140 30<br>KELLEY<br>120<br>HARE.NSSEEEEES 25 Ke EEN<br>- 100 (INTO « ‘<br>20<br>eX eye FR<br>Pe 80 PEN ye EA<br>15<br>| 60 ENS A<br>10<br>2ee Oe eee eee<br> a 40<br>5<br>Sees<br>20<br>PPP Trin} =f<br>PTET<br>0 0<br>YT TT PI N ~E | | ff A<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br>


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Figure 1.<br>temperature<br>( T j ≤ 150°C)<br>**----- End of picture text -----**<br>


Figure 2. 

**temperature** ( _V_ GE ≥ _T_ j ≤ 150°C) 

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60 60<br>VGE=20V VGE=20V<br>PON 17V LU 17V<br>50 15V Wa // aa 50 15V \Geye<br>13V 13V<br>- Nae \YL<br>11V 11V<br>eT 40 W/Z EE 40 WYOZ|<br>9V 9V<br>7V 7V<br>30 30<br>20 20<br>10 10<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T j=25°C) ( T j=150°C)<br>I C I C<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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40 3.0<br>25°C IC=10A<br>Tj=150°C IC=20A<br>35 IC=40A<br>2.5<br>z =<br>< 30 = $ jee lee<br>5 5 2.0 _<br>25<br>WwiadoO ffF7) = Wat _<br>20 1.5<br>oe EF ean<br>O / = P|| fT<br>uw4: 15 // adOFe<br>1.0<br>O i oe oe oe<br>-_<br>10<br>0.5<br>5<br>0 0.0<br>0 2 4 6 8 10 0 50 100 150<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=10V) 

Figure 6. 

( _V_ GE=15V) 

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1000<br>(Pe<br>td(off)<br>i al<br>tf<br>I td(on) ry<br>tr eed<br>I ee aa<br>e r<br>rT TT rePleo<br>g PTTL<br>P|<br>|<br>=<br>EG<br>100<br>§ EEEEEEEEEEEEEE<br>6EE EAEREEEEEEEEEEH<br>|©© GRREEtt [ttt]<br>PLEweber| eer<br>PE<br>10<br>0 10 20 30 40 50 60 70<br>R G , GATE RESISTOR [ Ω ]<br>Figure 8. Typical switching times as a function of<br>resistor<br>(inductive load, T j =150°C, V CE=400V,<br>V GE =15/0V, I C =20A,Dynamic test circuit in<br>7 Figure E)<br>t<br>**----- End of picture text -----**<br>


Figure 7. 

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(inductive load, T j =150°C, V CE=400V,<br>V GE =15/0V, R G=12 Ω ,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


2017-02-09 

## AIKB20N60CT 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
1000 a 7<br>|—_ td(off) a eSee e typ. T<br>tf<br>F ee ee eee<br>td(on)<br>tr 6<br>| Poeee rey s FR<br>Le a ee ee,<br>Pt TeA OOEte 5<br>2 PTT TET ETTett) &§ PeerySN<br>¢p) ee fe)ee ee™~<br>4<br>5 2 {| |) | | SR<br>100<br>g a a=<br>oO EGeSSa ee e e eesseee ee ee ee ee xe 3 FEEL<br>Pe SSeS E COP<br>= ee eee eee =<br>a<br>eeWw 2<br>PP eeE e ® 1<br>10 0<br>25 50 75 100 125 150 -50 0 50 100 150<br>T G , JUNCTION TEMPERATURE [°C] T G , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.29mA)<br>I C =20A, R G=12 ,Dynamic test circuit in<br>Figure E)<br>2.4 2.4<br>due to diode recovery due to diode recovery a<br>; [/]<br>Tes TTY 3 fee DO<br>2.0 Eoff 2.0 Eoff<br>PIE PITT Eon*  TTT TT tt a} P Eon* T<br>* *<br>Ets / E Ets 4<br>E a 2 JE ee<br>op)@ I T)/ (7p) f oe7<br>(op)Se 1.6 ULLAL7 nO8 1.6 L ee4<br>> > y<br>oO / 19) 7<br>ep 1.2 Lug 1.2 Pe<br>Gea: Ler|<br>=: 0.8 Iiliiiyeat :: 0.8 A eeaT<br>e LAvaert :ge LL retbee tl |<br>Eber;<br>0.4 0.4<br>La aodreer [ETP] EE<br>eetPATELTEE EEE ELLPLETEEEEEE<br>0.0 0.0<br>EEE Ee<br>0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T j =150°C, V CE=400V, (inductive load, T j =150°C, V CE=400V,<br>V GE =15/0V, R G=12 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A,Dynamictest circuit in<br>Datasheet Figure E) 8 Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


2017-02-09 

## AIKB20N60CT 

## TRENCHSTOP[TM] 

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Figure 13. 

(inductiveinductive lolo **ad** , _V_ CE =400V , _V_ GE=15/0V, _I_ C =20A, _R_ G=12 ,Dynamic test circuit Figure E) 

Figure 14. 

(inductiveinductive lolo **ad** , _T_ j = 150°C , _V_ GE=15/0V, _I_ C =20A, _R_ G=12 , Dynamic test circuit Figure E) 

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20 Ld Ld<br>120V } f= Ciss | TT<br>480V Coss<br>| [| / Ie- Crss LL | | tt Et<br>/ /<br>—_>aWw 15 \/ / / 1000 unaa SC e e ee ee ee<br>po<br>Oo} a<br><x / LC aee<br>a & ee<br>g J) ee a OO<br>or 2<br>wi- 10 A <E 1\<br>Lu \ “XN<br>100<br>= - poN UPeT<br>x a<br>0) a ee ee ee ee eee<br>-<br>5<br>0 10<br>0 25 50 75 100 125 150 0 10 20 30 40 50<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 15. Typical ( _I_ C=20A) 

Figure 16. ( _V_ GE 

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AIKB20N60CT 

## TRENCHSTOP[TM] 

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350 12<br>KU<br>a ~<br>300<br>= 10 aN<br>oei Lu<br>é eo ft) > NI<br>w: 250 =ee NY<br>fs)O falZz 8 aN NN<br>: eee<br>Ww:a 200 xeto= NKN\IN<br>6<br>fe) =<br>E 150 5<br>: es Ti T tty yn<br>:<br>or S)Se 4<br>100<br>or<br>: e Tt} T ett<br>-<br>: 6 PPP<br>(¢p) 2 Pp te<br>50<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, T j 150°C) ( V CE =400V, start at T j =25°C, T jmax ≤ 150°C)<br>1<br>SraCCFmei ma Sreeeee s aaelCy 1 Lo nn| Hill<br>> eeTP Ie eC<br><=— aINLAYaAW aa ll =< aCO COSCO: eat4 OC<br>O a a ed a a = rn Con Ne ATT<br>OK O a<br>O ese aan a<br>at oY ie 9 SEI /acel<br>IERna! DN y<br>0.1<br>cy D=0.5 ICI 2 ESP D=0.5<br>0.2 0.1 0.2<br>ora aeel Hy]i Oil 0.1 a EeCoCeee 0.1 EECCA<br>=xS Se 0.050.02 < Co COA7 eeCo| 0.050.02 ncOC<br>ar ELM Age 0.01 Ah = CON AA CTIEra 0.01<br>r n/a 1 | ee ea<br>single pulse single pulse<br>|_| Lal Am = i pu il<br>= =<br>0.01<br>gL CN A TTA<br>0.01<br>2 S O o e<br>ee {cee2 SSa ailrea r<br>TE a e<br>oT aA H g<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.07041 0.30709 0.3199 0.18715 ri[K/W]: 0.33997 0.44456 0.58146 0.13483<br>AG τ i[s]: 9.6E-5 6.8E-4 0.0108462 0.0692548 | mm 0 0 τ i[s]: 1.3E-4 1.5E-3 0 0.0182142 0.0920745<br>0.001 Ml Se | 0.001 i ...—|<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal resistance as a Figure 20. Diode transient thermal impedance as a<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


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D<br>**----- End of picture text -----**<br>


( _D_ = _t_ p/T) 

( _D_ = _t_ p/T) 

_**D**_ 

10 

Datasheet 

2017-02-09 

AIKB20N60CT 

## TRENCHSTOP[TM] 

**==> picture [476 x 322] intentionally omitted <==**

**----- Start of picture text -----**<br>
300 1.6<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>1.4<br>250<br>< 5 LLL | | | ff<br>z . ee 1.2 ee<br>w 200 ~ Je pop<br>F 7 Te] Be 1.0 |<br>6 150 aan > 0.8 fo<br>2 ee ee eeee<br>7 Go 0.6 fo<br>100<br>a w | | | | [| |<br>: re 0.4 ee ee<br>50 p) ) fe ¢ [ee<br>— 0.2 Pog | UT<br>rm | | | ft |<br>aT CUT<br>0 0.0 PF |<br>600 900 1200 1500 600 900 1200 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R =400V, Dynamic test circuit in Figure E) ( V R =400V, Dynamic test circuit in Figure E)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
25 0<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>E Tj=150°C, IF = 20A O|) O E Tj=150°C, IF = 20A ss<br>-150<br>= 20 ne ee e<br>P| gf |) |<br>BS  ote Pp | fe z -300 Poy fff<br>ede<br>15<br>-450<br>3 a #<br>Be 10 ge KC<br>-600<br>eyo| de<br>ef. 5 | do PEN<br>-750<br> 4 Nee<br>0 -900<br>Pte te E y Ep yr<br>600 900 1200 1500 600 900 1200 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


> ( ae _V_ R ODV Dynamic test circuit in Figure E) 

11 

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AIKB20N60CT 

## TRENCHSTOP[TM] 

**==> picture [474 x 303] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 2.5<br>Tj=25°C IC=10A<br>Tj=150°C IC=20A<br>IC=40A<br>50<br>2.0<br>2 40 fofp Ww=  |<br>im / < 1.5<br>3Q 30 / rs<br>$<br>Bf = 1.0<br>i 20 O<br>hs BP<br> a<br>0.5<br>10<br>a<br>0 0.0<br>a ee<br>0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 25. Typical diode forward current as a function Figure 26. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>


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AIKB20N60CT 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �Series 

## **Package Drawing PG-TO263-3** 

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



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Datasheet<br>**----- End of picture text -----**<br>


V�2.1 2017-02-09 

AIKB20N60CT 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �Series 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

V�2.1 2017-02-09 

Datasheet 

AIKB20N60CT 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �Series 

## **Revision�History** 

AIKB20N60CT 

## **Revision:�2017-02-09,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-02-09|Data sheet created|



15 

V�2.1 2017-02-09 

Datasheet 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIKB20N60CTATMA1/igbt-40-a-15-v-156-w-600-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aikb20n60ctatma1/igbt-aec-q101-600v-40a-156w-to/dp/2986332)
---

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