# IGBT, 74 A, 1.66 V, 250 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2986329/)

**URL**: https://novapart.co/products/AIGW40N65H5XKSA1/igbt-74-a-166-v-250-w-650-to-247-3-pins
**SKU**: AIGW40N65H5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.8100
**Stock**: 50+
**Lead Time**: 78 days (indicative)

## Description

DC Collector Current:74A; Collector Emitter Saturation Voltage Vce(on):1.66V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 74A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.66V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986329/)

## AIGW40N65H5 

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High speed fast IGBT in TRENCHSTOP TM _ 5 technology<br>Features and Benefits: C<br>High speed H5 technology offering:<br>Best-in-Class efficiency in hard switching and resonant<br>topologies<br>Plug and play replacement of previous generation IGBTs<br>650V breakdown voltage G<br>Low gate charge Q G E<br>Maximum junction temperature 175°C<br>Dynamically stress tested<br>Qualified according to AEC-Q101<br>Green package (ROHS compliant)<br>Complete product spectrum and PSpice Models: =<br>http://www. infineon.com/igbt/ Gi,<br>Applications:<br>Off-board charger yf<br>On-board charger<br>DC/DC converter<br>Power-Factor correction<br>1<br>2<br>3<br>**----- End of picture text -----**<br>


## **Applications:** 

|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIGW40N65H5|650V|40A|1.66V|175°C|AG40EH5|PG-TO247-3|



Datasheet www.infineon.com 

2017-06-27 

AIGW40N65H5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,2)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.60|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.66<br>1.85<br>2.05|2.10<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>500|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|50.0|-|S|



1) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications 

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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2300|-|pF|
|Output capacitance|_C_oes||-|43|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|92.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|149|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.36|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.47|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|156|-|ns|
|Fall time|_t_f||-|24|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.11|-|mJ|



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## High�speed�switching�series�fifth�generation 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|186|-|ns|
|Fall time|_t_f||-|17|-|ns|
|Turn-on energy|_E_on||-|0.55|-|mJ|
|Turn-off energy|_E_off||-|0.22|-|mJ|
|Total switchingenergy|_E_ts||-|0.77|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|212|-|ns|
|Fall time|_t_f||-|36|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.23|-|mJ|



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**----- Start of picture text -----**<br>
275 80<br>250<br>TTTTTT] 70 Ty] [Td<br>225<br>CEE, 60 IA<br>200<br>- AEE. PA<br>ae ee 175 50<br>150<br>pho KBP DN<br>40<br>125<br>ee 100 30 |<br>er 75 TNC ye fr KA<br>20<br>50<br>Ne ee<br>10<br>ee \<br>25<br>0 Sg 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>To Ae<br>100 100<br>COA C7<br>VGE = 20V VGE = 20V<br>a Ca<br>18V 18V<br>80 80<br>ea 15V 15V<br>7an7s 12V ea |e Lee 12V<br>8 60 10V iVaneen 60 ene) 10V //ae a e<br>LOW ce<br>8V 8V<br>BC eae ee<br>7V 7V<br>40 40<br>ees 6V /Geeeees eeen8 6V (4p —<br>S NPR 5V & Re 5V<br>20 20<br>PON) PNK<br>PORK EE) EO JRBS<br>0 ZS 0 O EAEN<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


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120<br>Tj = 25°C<br>100 PT Tj = 150°C T<br>|<br>P L<br>ee<br>80<br>Pa ee<br>Ww<br>ee<br>rs)w 60 /|<br>Ww<br>=e ed<br>(oe) 40 ['<br>.<br>2 A 7<br>CCT<br>20 Pt [TY] 7 | |<br>0 — ———|<br>cet—_— 7 trrr )<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical transfer characteristic<br>( V CE=20V)<br>I C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.50<br>IC = 5A<br>IC = 10A<br>2.25 IC = 20A<br>IC = 40A<br>ls E _<br>llz 2.00 =<br>rE<br><x 1.75<br>ee:<br>EE 1.50<br>ad<br>1.25<br>_<br>® 1.00<br>0.75<br>0.50<br>Liltt dt<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 6. 

( _V_ GE=15V) 

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**----- Start of picture text -----**<br>
1000 a a 1000 a SS SS ES ES<br>1| td(off) a ee ee ee | td(off) se ee ee ae<br>I tf p a a o i| tf aa aee eeeteee eee<br>td(on) td(on)<br>tr tr<br>F he FE be<br>| p o | Pea eee<br>/— {|__| __} |__|<br>—2 100 |a eS| |To cs 100 a<br>ip) a se a es<br>uw eea ee ee ee ip)<br>= ere a a<br>- a ee ee ee eee = a eeeee<br>Q poa ee es ee ee a ee e eeeee<br>=SL ND geteeea7 Zz eerd= be |<br>5 an ae<br>2) 10 a 2) 10 A SS<br>- a es - a<br>po a es ss es<br>aa<br>aa ee ee aeeee ee<br>a Deee<br>a Pf ft | hc] |<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =20A,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000 aEs |1 td(off) a aaRs  ee a a ee ee 5.5 typ.<br>tf min.<br>I td(on) aee 5.0 a max.<br>tr<br><x<br>rr — FE 4.5 S<br>=2 100 —Fryry fT aaye 4.0 hbKA | ~~ SN<br>ip)im= po a aes a (e)a ae SAY aw ~N.<br>- a a 3.5 Pe ~<br>es ee Ww a<br><= - ~<br>3.0<br>= | | | ed og AR —?<br>e _ — Lu ~ ~~<br>= pees eee ecteloeeee- ee meee La ~<br>10 2.5<br>7 a 7 Nn<br>po wi<br>ee N<br>a eseo) 2.0 ]<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>8 1.6<br>Eoff Eoff<br>Eon y/ Eon aa<br>7 = Ets / / 1.4 = Ets Y<br>/ 7<br>‘<br>_ / _ “<br>6 1.2<br>Lu / Lu “<br>io) / ip) y<br>(op) / (op) 7 -<br>e) 5 f e) 1.0 <<br>> / vA > “ =<br>©) / yo ©) 4A a7<br>w / iad Pa a<br>WwW 4 Ww 0.8 L<br>Zz / 7 Zz y a<br>Lu / WA Lu a -<br>Oo / / Oo a<br>Zz 3 Zz 0.6<br>: Awa : -<br>== 2 /aa yZO == 0.4 a ma<br>fa 1 / 7 a 0.2 LL|| | —<br>as<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.9 1.0<br>Eoff Eoff<br>0.8 EEonts 0.9 EEonts<br>ELLE) EYEE<br>ee ee 0.8<br>0.7<br>) aT ” “<br>0.7<br>0.6<br>o Peat Le o 0.6 Va Za<br>>O 0.5 wed oa — O> aa v a<br>0.5<br>ff -- ff A<br>0.4<br>a a a | L<br>o)Zz a Zzo) 0.4 7<br>0.3<br>E 0.3<br>;<br>0)<br>0.2<br>0.2<br>0) a= fF |<br>i ee<br>0.1 0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 , Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
16 1E+4<br>— V CC «BY EE H Cies — ————————————————<br>V CC Coes<br>14 —- =520V L Va 1\ Cres p ao<br>5 12 1000 | | |<br>oO —_ a ee<br><x LL Ps<br>FE 10 A 2 (a<br>e woo<br>LL 8 i 100 a ee ee ee<br>E ff 7 ————<br>= o ee<br>i ip a a ee<br>Lu 6 Oo aee<br>* 4 10 i eee<br>a es ss ee<br>po<br>2 a es<br>0 1<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>Se eee eet eet eet<br>a a |<br>cI<br>= A ca<br>S Sess ett<br>D = 0.5<br>0.2<br>| ae<br>aa 2 0.1 i<br>Seem 0.1<br>oO PE TT 0.05 Ht<br>2 eee<br>4 Cee 0.02 | IR<br><x YT AVA ee TTT 1<br>0.01<br>eC Sieg at<br>Bncae Aie single pulse ITT<br>e 0.01 teilnen 0<br>D ee ee ee<br>z tt 1 me |i<br>Re A A -- fll<br>- | | |<br>a eae<br>PALIIM ( UMM i: 1 EIN 2 TAT 3 ETI 4 TE<br>ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708<br>τ i[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881<br>| f PTT TTT TT TT<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance<br>( D = t p/T)<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


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## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO247-3** 

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## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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Figure D. 

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CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

12 

V�2.1 2017-06-27 

Datasheet 

AIGW40N65H5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Revision�History** 

AIGW40N65H5 

## **Revision:�2017-06-27,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-06-27|Data sheet created|



13 

V�2.1 2017-06-27 

Datasheet 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/AIGW40N65H5XKSA1/igbt-74-a-166-v-250-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aigw40n65h5xksa1/igbt-aec-q101-650v-74a-250w-to/dp/2986329)
---

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