# IGBT, 55 A, 1.65 V, 250 W, 1.2 kV, TO-263 (D2PAK), 7 Pins
**URL**: https://novapart.co/products/AIGBG25N120S7ATMA1/igbt-55-a-165-v-250-w-12-kv-to-263-d2pak-7-pins
**SKU**: AIGBG25N120S7ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.0500
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4906333RL/)
**AIGBG25N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** _
## **Final datasheet Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology**
## **Features**
- VCE = 1200 V
- IC = 25 A
- Very low VCEsat = 1.65 V (typ.) at ICnom = 25 A, 25°C
- Short circuit robust tsc = 4 µs at VCE = 800 V, VGE = 15 V
- Smooth switching characteristics
**==> picture [72 x 73] intentionally omitted <==**
**----- Start of picture text -----**
TAB
“dd,
1 2 3 4 5 6 7
**----- End of picture text -----**
- Wide range of dv/dt controllability
- TO263-7 package with high creepage distance > 5.8 mm, 400 ≤ CTI < 600
- High reliability and operating lifetime
## **Potential applications**
- xEV auxiliary drives
- Automotive HV heaters
## **Product validation**
- Qualified according to AEC-Q101 for automotive applications
- Qualified Reflow device according to JEDEC J-STD-020 MSL1
## **Description**
Pin definition:
- Pin 1 - Gate
- Pin 2 - Kelvin Emitter
- Pin 3…7 - Emitter
- Tab - Collector
|**Type**|**Package**|**Marking**|
|---|---|---|
|AIGBG25N120S7|PG-TO263-7-U01|AGBG25S7|
Please read the sections "Important notice" and "Warnings" at the end of this document
Datasheet www.infineon.com
Revision 1.00 2025-09-18
**AIGBG25N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology**
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**Table of contents**
## **Table of contents**
||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**3**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**4**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
|**5**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14|
Datasheet
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**AIGBG25N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology**
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## **1 Package**
## **1 Package**
|**1**
**Package**|**1**
**Package**|**1**
**Package**|**1**
**Package**|||||
|---|---|---|---|---|---|---|---|
|**Table 1**
**Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Storage temperature|_T_stg|||-55||150|°C|
|Soldering temperature|_T_sold|reflow soldering (MSL1 according to JEDEC
J-STD-020)||||260|°C|
|IGBT thermal resistance,
junction-case|_R_th(j-c)||||0.45|0.6|K/W|
## **2 IGBT**
|**2**
**IGBT**|**2**
**IGBT**|**2**
**IGBT**||||
|---|---|---|---|---|---|
|**Table 2**
**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Collector-emitter voltage_1)_|_V_CE|_T_vj= -40...175 °C||1200|V|
|DC collector current,
limited by Tvjmax|_I_C||_T_c= 25 °C|55|A|
||||_T_c= 100 °C|37||
|Pulsed collector current, tp
limited by Tvjmax|_I_Cpulse|||75|A|
|Turn-of safe operating
area||_V_CE≤ 1200 V,_t_p≤ 1 µs,_T_vj≤ 175 °C||75|A|
|Gate-emitter voltage|_V_GE|||±20|V|
|Transient gate-emitter
voltage|_V_GE|_t_p≤ 0.5 µs,_D_< 0.01||±25|V|
|Short-circuit withstand
time|_t_SC|_V_CC≤ 800 V,_V_GE= 15 V, Allowed number of
short circuits < 1000, Time between short
circuits ≥ 1.0 s,_T_vj= 175 °C||4|µs|
|Power dissipation|_P_tot||_T_c= 25 °C|250|W|
||||_T_c= 100 °C|125||
_1)_ Tested at Tvj=25°C, verified by design/characterization over full temperature range
|**Table 3**
**Characteristic values**|**Table 3**
**Characteristic values**|**Table 3**
**Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter
saturation voltage|_V_CEsat|_I_C= 25 A,_V_GE= 15 V|_T_vj= 25 °C||1.65|2|V|
||||_T_vj= 175 °C||2|||
|Gate-emitter threshold
voltage|_V_GEth|_I_C= 0.49 mA, VCE= VGE||5.15|5.7|6.45|V|
|**(table continues...)**||||||||
Datasheet
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## **2 IGBT**
|**Table 3**
**(continued) Characteristic values**|**Table 3**
**(continued) Characteristic values**|**Table 3**
**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Zero gate-voltage collector
current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||40|µA|
||||_T_vj= 175 °C||2000|||
|Gate-emitter leakage
current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA|
|Transconductance|_g_fs|_I_C= 25 A,_V_CE= 20 V,_T_vj= 175 °C|||9.3||S|
|Short-circuit collector
current|_I_SC|_V_CC≤ 800 V,_V_GE= 15 V,
_t_SC≤ 4 µs, Allowed
number of short circuits
< 1000, Time between
short circuits ≥ 1.0 s|_T_vj= 25 °C||158.2||A|
||||_T_vj= 175 °C||126.5|||
|Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||3.6||nF|
|Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||58||pF|
|Reverse transfer
capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||17||pF|
|Gate charge|_Q_G|_V_CC= 960 V,_I_C= 25 A,_V_GE=|0/15 V||158||nC|
|Turn-on delay time|_t_d(on)|_V_CC= 800 V,_V_GE=15 V,
_R_G(on)= 4.5 Ω,
_R_G(of)= 4.5 Ω|_T_vj= 25 °C,
_I_C= 25 A||12.9||ns|
||||_T_vj= 175 °C,
_I_C= 25 A||14.5|||
|Rise time (inductive load)|_t_r|_V_CC= 800 V,_V_GE=15 V,
_R_G(on)= 4.5 Ω,
_R_G(of)= 4.5 Ω|_T_vj= 25 °C,
_I_C= 25 A||4.5||ns|
||||_T_vj= 175 °C,
_I_C= 25 A||5.8|||
|Turn-of delay time|_t_d(of)|_V_CC= 800 V,_V_GE=15 V,
_R_G(on)= 4.5 Ω,
_R_G(of)= 4.5 Ω|_T_vj= 25 °C,
_I_C= 25 A||120||ns|
||||_T_vj= 175 °C,
_I_C= 25 A||186|||
|Fall time (inductive load)|_t_f|_V_CC= 800 V,_V_GE=15 V,
_R_G(on)= 4.5 Ω,
_R_G(of)= 4.5 Ω|_T_vj= 25 °C,
_I_C= 25 A||86||ns|
||||_T_vj= 175 °C,
_I_C= 25 A||165|||
|Turn-on energy|_E_on|_V_CC= 800 V,_V_GE=15 V,
_R_G(on)= 4.5 Ω,
_R_G(of)= 4.5 Ω|_T_vj= 25 °C,
_I_C= 25 A||0.2||mJ|
||||_T_vj= 175 °C,
_I_C= 25 A||0.3|||
**(table continues...)**
Datasheet
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## **2 IGBT**
|**Table 3**
**(continued) Characteristic values**|**Table 3**
**(continued) Characteristic values**|**Table 3**
**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Turn-of energy|_E_of|_V_CC= 800 V,_V_GE=15 V,
_R_G(on)= 4.5 Ω,
_R_G(of)= 4.5 Ω|_T_vj= 25 °C,
_I_C= 25 A||1.47||mJ|
||||_T_vj= 175 °C,
_I_C= 25 A||2.61|||
|Total switching energy|_E_ts|_V_CC= 800 V,_V_GE=15 V,
_R_G(on)= 4.5 Ω,
_R_G(of)= 4.5 Ω|_T_vj= 25 °C,
_I_C= 25 A||1.67||mJ|
||||_T_vj= 175 °C,
_I_C= 25 A||2.91|||
|Operating junction
temperature|_T_vj|||-40||175|°C|
_**Note** : Electrical Characteristic at T_ vj _= 25°C, unless otherwise specified._
Datasheet
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**AIGBG25N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology**
**3 Characteristics diagrams**
**3 Characteristics diagrams**
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**Power dissipation as a function of case temperature** Ptot = f(Tc) T ≤ 175 °C vj
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Typical output characteristic
IC = f(VCE)
T = 25 °C
vj
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250 75
200 60
150 45
100 30
50 15
0 0
25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Typical output characteristic Typical transfer characteristic
IC = f(VCE) IC = f(VGE)
Tvj = 175 °C VCE = 20 V
75 75
60 60
45 45
30 30
15 15
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 12 14
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## **3 Characteristics diagrams**
## **Typical collector-emitter saturation voltage as a function of junction temperature**
VCEsat = f(Tvj)
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3.0
2.5
2.0
1.5
1.0
-50 -25 0 25 50 75 100 125 150 175
**----- End of picture text -----**
## **Typical switching times as a function of collector current**
t = f(IC) VCC = 800 V, Tvj = 25 °C, RG = 4.5 Ω
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1000
100
10
1
0 10 20 30 40 50 60 70 80
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## **Gate-emitter threshold voltage as a function of junction temperature**
VGEth = f(Tvj) IC = 0.85 mA
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**----- Start of picture text -----**
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-50 -25 0 25 50 75 100 125 150 175
**----- End of picture text -----**
## **Typical switching times as a function of collector current**
t = f(IC) VCC = 800 V, Tvj ≥ 25 °C, RG = 4.5 Ω
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10000
1000
100
10
1
0 10 20 30 40 50 60 70 80
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## **3 Characteristics diagrams**
## **Typical switching times as a function of gate resistor**
t = f(RG)
IC = 25 A, VCC = 800 V, Tvj = 175 °C
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10000
1000
100
10
1
0 5 10 15 20 25 30 35 40 45 50
**----- End of picture text -----**
## **Typical switching times as a function of junction temperature**
t = f(Tvj) IC = 25 A, VCC = 800 V, RG = 4.5 Ω
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**----- Start of picture text -----**
1000
100
10
1
25 50 75 100 125 150 175
**----- End of picture text -----**
**Typical switching times as a function of gate resistor** t = f(RG)
IC = 25 A, VCC = 800 V, Tvj = 25 °C
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**----- Start of picture text -----**
1000
100
10
1
0 5 10 15 20 25 30 35 40 45 50
**----- End of picture text -----**
## **Typical switching energy losses as a function of collector current**
E = f(IC) VCC = 800 V, Tvj = 25 °C, RG = 4.5 Ω
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7
6
5
4
3
2
1
0
0 20 40 60 80
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## **3 Characteristics diagrams**
## **Typical switching energy losses as a function of collector current**
**Typical switching energy losses as a function of gate resistor**
## E = f(IC)
E = f(RG) IC = 25 A, VCC = 800 V, Tvj = 175 °CC = 25 A, VCC = 800 V, Tvj = 175 °C = 25 A, VCC = 800 V, Tvj = 175 °CCC = 800 V, Tvj = 175 °C = 800 V, Tvj = 175 °Cvj = 175 °C = 175 °C
**==> picture [540 x 598] intentionally omitted <==**
**----- Start of picture text -----**
VCC = 800 V, Tvj ≥ 25 °C, RG = 4.5 Ω IC = 25 A, VCC = 800 V, Tvj = 175 °CC = 25 A, VCC = 800 V, Tvj = 175 °C = 25 A, VCC = 800 V, Tvj = 175 °CCC = 800 V, Tvj = 175 °C = 800 V, Tvj = 175 °Cvj = 175 °C = 175 °C
10 6
9
8 5
7
6 4
5
4 2
3
2 1
1
0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50
Typical switching energy losses as a function of gate Typical switching energy losses as a function of
resistor junction temperature
E = f(RG) E = f(Tvj)
IC = 25 A, VCC = 800 V, Tvj = 25 °C IC = 25 A, VCC = 800 V, RG = 4.5 Ω
5 3.0
2.5
4
2.0
3
1.5
2
1.0
1
0.5
0 0.0
0 10 20 30 40 50 25 50 75 100 125 150 175
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**AIGBG25N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology**
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## **3 Characteristics diagrams**
## **Typical gate charge** VGE = f(QG)
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Typical capacitance as a function of collector-emitter
voltage
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**----- Start of picture text -----**
C = f(VCE)
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**----- Start of picture text -----**
f = 100 kHz, VGE = 0 V
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16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160
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10000
1000
100
10
1
0 100 200 300 400 500 600 700 800
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## **IGBT typical transient thermal impedance as a function of pulse width**
Zth(j-c) = f(tp)
## D = tp/T
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**----- Start of picture text -----**
1
0.1
0.01
0.001
1E-6 1E-5 0.0001 0.001 0.01 0.1 1
**----- End of picture text -----**
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## **4 Package outlines**
## **4 Package outlines**
|PACKAGE - GROU
NUMBER:|**PG-TO263-7-U01**
P|**PG-TO263-7-U01**
P|
|---|---|---|
|**DIMENSIONS**|**MILLIMETERS**||
||MIN.|MAX.|
|**A**|4.30|4.50|
|**A1**|0.00|0.10|
|**A2**|2.30|2.50|
|**b**|0.50|0.70|
|**b1**|0.00|0.15|
|**c**|0.40|0.60|
|**c1**|1.17|1.37|
|**D**
|9.05|9.45
|
|**D1**|5.90|6.10|
|**E**|9.80|10.20|
|**E1**|9.36|9.56|
|**E2**|0.00|0.30|
|**E3**|8.40|8.60|
|**e**|1.27||
|**H**|15.00||
|**L**|4.20|5.20|
|**L1**|0.70|1.30|
|**L2**|1.70|2.30|
|**L3**|2.70||
|**P**|0.35|0.55|
|**R**|2.03|2.23|
|**S**
|1.40
°|1.60
°|
|**THETA**|0.00|8.00|
**Figure 1**
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**AIGBG25N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology**
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**5 Testing conditions**
## **5 Testing conditions**
**==> picture [502 x 613] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t) I,V
90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b
10% V GE t a b
I C (t) Q a Q b
dI
90% I C 90% I C
10% I C 10% I C t Figure C. Definition of diode switching
characteristics
V CE (t)
t
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
Figure D.
10% V GE
t
I C (t)
CC
2% I C t
V CE (t) Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor C ,r
t 2 t 4 (only for ZVT switching)
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V C C
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**Figure 2**
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**AIGBG25N120S7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology**
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**Revision history**
## **Revision history**
|**Revision history**|||
|---|---|---|
|**Document revision**|**Date of release**|**Description of changes**|
|0.10|2024-03-14|Target datasheet|
|0.20|2025-04-29|Preliminary datasheet|
|1.00|2025-09-18|Final datasheet|
Datasheet
Revision 1.00 2025-09-18
13
## **Trademarks**
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**Edition 2025-09-18 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany**
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Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
## Links
- [View this product on Novapart](https://novapart.co/products/AIGBG25N120S7ATMA1/igbt-55-a-165-v-250-w-12-kv-to-263-d2pak-7-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aigbg25n120s7atma1/igbt-single-1-2kv-55a-to-263/dp/4906333RL)
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