# IGBT, 80 A, 1.6 V, 305 W, 650 V, TO-263 (D2PAK), 3 Pins
**URL**: https://novapart.co/products/AIGB50N65F5ATMA1/igbt-80-a-16-v-305-w-650-to-263-d2pak-3-pins
**SKU**: AIGB50N65F5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9300
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 305W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3582435/)
## AIGB50N65F5
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**----- Start of picture text -----**
High speed FAST IGBT in TRENCHSTOP TM _ 5 technology
Features and Benefits: C
High speed F5 technology offering:
Best-in-Class efficiency in hard switching and resonant
topologies
650V breakdown voltage
Low gate charge Q G G
Maximum junction temperature 175°C E
Dynamically stress tested
Qualified according to AEC-Q101
Green package (ROHS compliant) C
Complete product spectrum and PSpice Models:
http://www. infineon.com/igbt/ @): j
Ro "ing
Applications: ~?O26 On
a
Off-board charger - :
On-board charger (ad ag
DC/DC converter f |
Power-factor correction G _
E
**----- End of picture text -----**
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**----- Start of picture text -----**
Applications:
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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIGB50N65F5|650V|50A|1.6V|175°C|AG50EF5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-19
AIGB50N65F5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°Cvaluelimitedbybondwire
_T_c=100°C|_I_C||80.0
56.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||150.0|A|
|Turn off safe operating area
_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||150.0|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±30|V|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||305.0
152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|0.50|K/W|
|Thermal resistance, min. footprint
junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on
PCB
junction - ambient|_R_th(j-a)||-|-|40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.60
1.80
1.90|2.10
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V
_T_vj=25°C
_T_vj=175°C|-
-|-
1000|40
-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|50.0|-|S|
1) Defined by design. Not subject to production test.
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|65|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,
_V_GE=15V|-|115.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=25.0A,
_V_GE=0.0/15.0V,
_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|166|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.55|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.66|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=6.0A,
_V_GE=0.0/15.0V,
_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|172|-|ns|
|Fall time|_t_f||-|28|-|ns|
|Turn-on energy|_E_on||-|0.13|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.17|-|mJ|
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Datasheet
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AIGB50N65F5
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## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=25.0A,
_V_GE=0.0/15.0V,
_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|179|-|ns|
|Fall time|_t_f||-|9|-|ns|
|Turn-on energy|_E_on||-|0.74|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.89|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=6.0A,
_V_GE=0.0/15.0V,
_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|205|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.21|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|
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Datasheet
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AIGB50N65F5
**==> picture [474 x 322] intentionally omitted <==**
**----- Start of picture text -----**
350 90
80
300 Pit tt PP EE
70
250
60
PP Xo, PRE
NC 200
50
pepL ASE
SGR\G8n| 150 40 oN
Pp 30 saeeNen
Na 100 PEN
20
ON GERAD
50
10
PLU P|ULEty |
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 "*N 175
T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]
Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case
temperature temperature
( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)
P tot I C
**----- End of picture text -----**
**==> picture [469 x 285] intentionally omitted <==**
**----- Start of picture text -----**
150 150
VGE=20V VGE=20V
135 18V 135 18V
IN 15V ENG 15V 7a
120 120
\\ If NG ae
12V 12V
105 105
z 10V NY/ee 10V WS
8V 8V
90 90
N/A eS / ae
7V 7V
75 75
6V 6V
60 5V 60 5V
45 45
30 30
fx
15 15
> | |fyxs——
0 A e e 0 e 4
0 1 2 3 4 5 0 1 2 3 4 5
V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]
I C I C
**----- End of picture text -----**
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
6
Datasheet
2019-10-19
## AIGB50N65F5
**==> picture [474 x 643] intentionally omitted <==**
**----- Start of picture text -----**
150 2.50
Tvj = 25°C IC = 6.25A
135 Tvj = 150°C IC = 12.5A
2.25 IC = 25A
IC = 50A
120
fe)
_ I éE 2.00 7
ee 105 ee ee
ee eee
1.75
90
z 5
.ef BeerE
a 75 Ee 1.50
4a 60 Po | LAE OadFE 1.25
ee) ee:
rs) 45 / a
1.00
: fe) jp —
30
0.75
ffif de
15
0 -— LA.CA 0.50
4 5 6 7 8 9 10 0 25 50 75 100 125 150 175
V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]
Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage
( V CE=20V) a function of junction temperature
( V GE=15V)
1000 a a 1000 ——— a
|1 td(off) aa a ee ee |i td(off) ppm a ee|
I tf ee ee ee | tf a ee ee ee eee
td(on) td(on)
tr tr
Ff} | p o EE | baa ee |
100 100
z | TT} g -
ip) (a ee ee a es es a ee
uw pee ee ip) poee
= a Sa ne | a a a Se
- a eeee ee eeee ee = aa eeaeeeeee ee
Q a a en ee ee ee Geeeeee
= ciao Se
E Noe E oY
2) 10 a 2) 10 a A a ee ee
- a a - a
aEe iAa aeeeea es ee ee
a ee a ee ee ee ee ee eee eee
a ee ee a Deee
es ee ee ee ee Pf ft | hc] |
1 1
0 30 60 90 120 150 5 15 25 35 45 55 65 75 85
I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]
I C
CEsat
V
t t
**----- End of picture text -----**
Figure 7.
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, r G=12 Ω , Dynamic test
Figure E)
**----- End of picture text -----**
Figure 8. Typical **resistor**
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, I C =25A,Dynamic test
Figure E)
**----- End of picture text -----**
Datasheet
7
2019-10-19
AIGB50N65F5
**==> picture [474 x 341] intentionally omitted <==**
**----- Start of picture text -----**
1000 aa 5.5
td(off) typ.min.
I I ttfd(on) a ee — 5.0 max.
a eeee she
tr
4.5
( ee a -
oe a
ss 100 ee Qa 4.0 ~
ee
- esee ee 3.5 —™—. .
es es SY x
3.0
e n ee —— \
> p oco} Bf
10 E e i 2.5 N
”. A
poa eseo)x 2.0 \N
1.5
—+F4+4>4° |] [PPE] |
a
1 1.0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
T vj ,JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]
Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function
junction temperature of junction temperature
(inductive load, V CE =400V, V GE=15/0V, ( I C=0.5mA)
I C =25A, r G=12 ,Dynamic test circuit in Figure
E)
t
GE(th)
V
**----- End of picture text -----**
**==> picture [471 x 342] intentionally omitted <==**
**----- Start of picture text -----**
13 3.2
Eoff 3.0 Eoff
12 fe Eon ] f Eon t
Ets 2.8 Ets
ee ed ee ee | ft i | ft
11
2.6
10
Z Af2 2.4 f o
7 9 Y e 2.2
ee 8 2.0 ee ee
1.8
a 7 ee ae
1.6
6
ee eae 1.4 ee ae
5 1.2
ee 4 ee 0ee 1.0 ee eee
0.8
Bf A 3 ee
0.6
fet
2
0.4
>a eee
1
0.2
0 Pa eee 0.0 eee
0 30 60 90 120 150 5 15 25 35 45 55 65 75 85
I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]
Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses asa
function of collector T vj current V CE=400V, feuen ofgate T resistor vj V CE=400V,
V inetsOv GE r G=12 Ω Dynevnic test circuitin V " GE =15)/0V. I C =25A, Dynamic test circuit in
Figure E) Figure E)
E E
**----- End of picture text -----**
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**----- Start of picture text -----**
Datasheet
**----- End of picture text -----**
8
2019-10-19
AIGB50N65F5
**==> picture [526 x 670] intentionally omitted <==**
**----- Start of picture text -----**
1.2 1.2
Eoff Eoff
Eon 1.1 Eon
Ets Ets
1.0 1.0
—_ —_ “
0.9
D 0.8 =a 0.8
-_o" __ - o a
>a - > 0.7
Ww: 0.6 _ aaa owGo| 0.6 ee“* ee [|]
Zz - Ww ,
i _— Zeeea eea
0.5
L=
O 0.4 O 0.4
EE
° 0.3
0.2 0.2
P| “ [pa[| [ | ft 7
0.1
0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500
T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of junction temperature function of collector emitter voltage
(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,
I C =25A, r G=12 ,Dynamic test circuit in I C =25A, r G=12 ,Dynamic test circuit in
Figure E) Figure E)
16
[7
— V CC Cies
V CC Co(er)
14 -—— 7 / / 1E+4 H E CCoesres _—_——— L
a a a
ee ee
_ 12 Wf, a e e
ee
Ww
= 7. a a ee
1000
PL Lf lg Gee ==
FE 10 /) 2 SE
O uw aa
Vs= 8 <—porf
: iY S 100 Ro
i rT a. SS eee
Ww 6 oO SR ee ee ee ee ee ee
-
5
y
o [aee
4
10
2 [<<
0 Pet ft | 1 |a | | | | |
0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400
Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of
( I C=50A) collector-emitter voltage
E E
C
GE
V
**----- End of picture text -----**
**==> picture [61 x 28] intentionally omitted <==**
**----- Start of picture text -----**
Figure 16.
( V GE
**----- End of picture text -----**
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Datasheet
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AIGB50N65F5
**==> picture [234 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1
a
A
= PT ee TT
2 ee
D = 0.5
wom UT
0.2
a 0.1
qi 0.1 nt! i a
0.05
== Semn =—ee <0) 7 ABPa eeCoCneae
a TTT 0.02 CIC
0.01
fe PA ea single pulse LT
r Saite i paUMNTY PALMA
e200
i 0.01 20000
icp) i
z Zt " me |i
Re eR --|I
- PAN TT TT |
PUAN LIN VU Pe ol
PA LM i: 1 UIA 2 LAE 3 VT 4 5 6 EU
ri[K/W]: 3.6E-3 0.119435 0.182725 0.177799 0.014558 2.0E-3
τ i[s]: 1.1E-5 2.8E-4 1.9E-3 9.4E-3 0.149024 2.064771
0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
t p , PULSE WIDTH [s]
c)th(j-
Z
**----- End of picture text -----**
> Figure 17. IGBT ( _D_ = _t_ p/T)
10
Datasheet
2019-10-19
AIGB50N65F5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
**==> picture [112 x 124] intentionally omitted <==**
**==> picture [43 x 105] intentionally omitted <==**
**==> picture [140 x 91] intentionally omitted <==**
|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00
|0.25
|0.000
|0.010
|
|||0.65
0.95|1.15
0.85|0.026
0.037|0.033
0.045|
|||0.33
|0.65
|0.013
|0.026
|
|||8.51
1.17|9.45
1.40|0.335
0.046|0.372
0.055|
|||7.10
9.80|7.90
10.31|0.280
0.386|0.311
0.406|
|||8.60
2.54
6.50||0.339
0.256
0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930
16.05|16.25
950|0.632
0366|0.640
0374|
|||.
4.50
|.
4.70
|.
0.177
|.
0.185
|
|||10.70
|10.90
|0.421
|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.1 2019-10-19
AIGB50N65F5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
Figure C. Definition of diode switching
characteristics
**----- End of picture text -----**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
12
V�2.1 2019-10-19
Datasheet
AIGB50N65F5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Revision�History**
AIGB50N65F5
## **Revision:�2019-10-19,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-19|Final Datasheet|
13
V�2.1 2019-10-19
Datasheet
## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/AIGB50N65F5ATMA1/igbt-80-a-16-v-305-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aigb50n65f5atma1/transistor-igbt-650v-80a-to-263/dp/3582435)
---
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