# IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pins
**URL**: https://novapart.co/products/AIGB40N65F5ATMA1/igbt-74-a-16-v-250-w-650-to-263-d2pak-3-pins
**SKU**: AIGB40N65F5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.6900
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 74A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3582433/)
## AIGB40N65F5
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**----- Start of picture text -----**
High speed FAST IGBT in TRENCHSTOP TM _ 5 technology
Features and Benefits: C
High speed F5 technology offering:
Best-in-Class efficiency in hard switching and resonant
topologies
650V breakdown voltage
Low gate charge Q G G
Maximum junction temperature 175°C E
Dynamically stress tested
Qualified according to AEC-Q101
Green package (ROHS compliant) C
Complete product spectrum and PSpice Models:
http://www. infineon.com/igbt/ @): j
Ro "ing
Applications: ~?O26 On
a
Off-board charger - :
On-board charger (ad ag
DC/DC converter f |
Power-factor correction G _
E
**----- End of picture text -----**
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Applications:
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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIGB40N65F5|650V|40A|1.6V|175°C|AG40EF5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-18
AIGB40N65F5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_C||74.0
46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area
_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±30|V|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||250.0
125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|0.60|K/W|
|Thermal resistance, min. footprint
junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on
PCB
junction - ambient|_R_th(j-a)||-|-|40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.60
1.80
1.90|2.10
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V
_T_vj=25°C
_T_vj=175°C|-
-|-
1000|40
-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S|
1) Defined by design. Not subject to production test.
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,
_V_GE=15V|-|90.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=20.0A,
_V_GE=0.0/15.0V,
_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|166|-|ns|
|Fall time|_t_f||-|6|-|ns|
|Turn-on energy|_E_on||-|0.39|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.50|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=5.0A,
_V_GE=0.0/15.0V,
_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|183|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
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Datasheet
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AIGB40N65F5
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## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=20.0A,
_V_GE=0.0/15.0V,
_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|203|-|ns|
|Fall time|_t_f||-|4|-|ns|
|Turn-on energy|_E_on||-|0.53|-|mJ|
|Turn-off energy|_E_off||-|0.21|-|mJ|
|Total switchingenergy|_E_ts||-|0.74|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=5.0A,
_V_GE=0.0/15.0V,
_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|243|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.24|-|mJ|
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Datasheet
5
AIGB40N65F5
**==> picture [474 x 642] intentionally omitted <==**
**----- Start of picture text -----**
300 80
70
250 TI NEE
60 \
\ BNE
200
50
ENDER. Pf Ne
150 40
30
PONE EEN
100
Not EN
20
50
SEEDNG eee
10
PN EN
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]
Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case
temperature temperature
( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)
120 120
VGE = 20V VGE = 20V
18V 18V
|/ |
100 15V 100 15V
ENG 7
12V 12V
i 10V see 10V | oe
80 80
8V 8V
aN 7V SN 7V
60 60
6V 6V
5V 5V
40 40
20 20
DACRE acm
0 0
0 1 2 3 4 5 0 1 2 3 4 5
V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]
P tot I C
I C I C
**----- End of picture text -----**
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
6
Datasheet
2019-10-18
## AIGB40N65F5
**==> picture [532 x 643] intentionally omitted <==**
**----- Start of picture text -----**
120 2.50
Tvj = 25°C IC = 10A
Tvj = 150°C IC = 20A
2.25 IC = 40A
100
z
s
Ee 2.00
_ |
80
Pa rE
im oe ep)
Ooa 60 fFEe 1.50 uo"
ua 5FE 1.25 f=
40
: pe fo
1.00
20
0.75
7
BO4nEe Eas
0 0.50
4 5 6 7 8 9 10 0 25 50 75 100 125 150 175
V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]
Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage as
( V CE=20V) a function of junction temperature
( V GE=15V)
1000 a a 1000 a SS SS ES ES
| 1 td(off) a a ee ee ee | td(off) a ee ee ee ee en
I tf p o | tf ee ee = eee eee
td(on) td(on)
tr tr
F p FE be
| a ee ee ee ee | fp,
z | Ta =
— 100 a cs 100 a
ip) Pe a es ee
uw a ee ee ee eee ip) a eseee
= a a eh he a a en
- poa edee ee ee = aa eeee eeee eeaeee e ee eee
Q pgs | | __ Q eeee
so are ne eelrea
Een ee7 E eea 7
2) 10 a 2) 10 a 2 es
- a a - Sa A
po po A
a a a 72 a
a es ee ee ys a ee ee ee ee
a p e | |
a Po | ot tT | dT
1 1
0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85
I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]
I C
CEsat
V
t t
**----- End of picture text -----**
Figure 7.
**==> picture [88 x 9] intentionally omitted <==**
**----- Start of picture text -----**
T vj =150°C, V CE=400V,
**----- End of picture text -----**
Figure 8. Typical **resistor**
_T_ vj =150°C, _V_ CE=400V,
**==> picture [78 x 19] intentionally omitted <==**
**----- Start of picture text -----**
V GE =15/0V, r G=15 Ω
Figure E)
**----- End of picture text -----**
_V_ GE =15/0V, _I_ C Figure E)
Datasheet
7
2019-10-18
AIGB40N65F5
**==> picture [475 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1000 aa 5.5
| 1 ttd(off)f a aee aee ee typ.min.
I td(on) a eeee ee ee eee _ 5.0 = max.
tr
p e rr —7 w sa
e) See
2f | || 4§ ~.
= 100 a es a 4.0 EE —_| ~
ip) a i ~.
im poa a a (e) — SBA .
- es ee Wy 3.5 we \
= aa ~
3.0
e e
= ee 4 = ~ —_
S2)7 10 a eS Ww:7 2.5 ~ ~~ \ \Y
po wi XN
es \
a i ee ee ro) 2.0
1.5
1 1.0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]
t
GE(th)
V
**----- End of picture text -----**
Figure 9.
_V_ CE =400V, _V_ GE=15/0V,
Figure 10.
( _I_ C=0.4mA)
_I_ C =20A, _r_ G=15 E)
**==> picture [471 x 342] intentionally omitted <==**
**----- Start of picture text -----**
15 2.0
Eoff Eoff
Eon Eon
Ets Ets
12 1.6
n n ra
Lu Lu ?
7) 7) 7
o ep) ”
e) e) “
—! 9 —! 1.2
> > a
im “ m7 oo a7
Zz v4 Zz ¢
Lu ¢ Ww pod co
oOZz 6 ¢ a (VU)Z 0.8 ° o -7
= “ 7 = o*
oO 7 7 oO Poe “7
E “ , E -
a“a7
a
“ - 7 —
3 7 0.4 |
a a>
-t-_
“Lo -nee a —_—
0 0.0
0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85
I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]
Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a
function of collector current function of gate resistor
(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in
Figure E) Figure E)
E E
**----- End of picture text -----**
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**----- Start of picture text -----**
Datasheet
**----- End of picture text -----**
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2019-10-18
AIGB40N65F5
**==> picture [474 x 670] intentionally omitted <==**
**----- Start of picture text -----**
1.2 1.4
Eoff Eoff
Eon Eon
Ets 1.2 Ets
oy oy
0.9
on on 1.0
Ww Ww
7) 7)
o —-| oO
—! "7 o o
> -" > 0.8 ?
na na “7
Ww 0.6 > Ww Prat
) -- _-— ) 0.6 oe -
Zz _ =_— Zz oe -
= _ L “7 -
Ee — F Ee 0.4 7“ a “ -
a 0.3 3 =
0.2
ee - ————
0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500
T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of junction temperature function of collector emitter voltage
(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,
I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in
Figure E) Figure E)
16
——s-rnv V CC [ Cies 7
—_— V CC = / Co(er)
14 , 1E+4 I Coes
Cres
a
12 fi a
=. | a a a
Ww
1000
FE 10 A 2 EE
O> uw SEa ss
Vs 2 a ee ee ee ee eee eee
ke 8 —< pot tT
100
E _/ S of‘
i oO EEE
6 O a
Mux [__ <- oSSRSa ee re re he ee ae ee ree
o RO
4
10
aa
2 a
0 fit, td 1 Pot | |
0 20 40 60 80 100 0 50 100 150 200 250 300 350 400
Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of
( I C=40A) collector-emitter voltage
E E
C
GE
V
**----- End of picture text -----**
**==> picture [61 x 28] intentionally omitted <==**
**----- Start of picture text -----**
Figure 16.
( V GE
**----- End of picture text -----**
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Datasheet
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AIGB40N65F5
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**----- Start of picture text -----**
1
PFE EEE CHEE
EET See
PT TTermET
= RD ot
=
Ss EE ae et
8 D = 0.5
0.2
EE 0.1
0.1
i2 per]eZ)07 Ala 0.05 MAI| |
0.02
z Ea aH
0.01
ML, or eo ema
y single pulse
uw {2aeA
m7 Fa
0.01
% SeVs aE
z Cat Rp 1
s | _ I
SRE GH
° a A ||
A
i: 1 2 3 4 5 6
ri[K/W]: 5.5E-3 0.142332 0.228875 0.212006 0.017599 2.1E-3
τ i[s]: 1.3E-5 2.7E-4 1.8E-3 8.8E-3 0.13885 2.05094
0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
t p , PULSE WIDTH [s]
c)th(j-
Z
**----- End of picture text -----**
> Figure 17. IGBT ( _D_ = _t_ p/T)
10
Datasheet
2019-10-18
AIGB40N65F5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
**==> picture [112 x 124] intentionally omitted <==**
**==> picture [43 x 105] intentionally omitted <==**
**==> picture [140 x 91] intentionally omitted <==**
|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00
|0.25
|0.000
|0.010
|
|||0.65
0.95|1.15
0.85|0.026
0.037|0.033
0.045|
|||0.33
|0.65
|0.013
|0.026
|
|||8.51
1.17|9.45
1.40|0.335
0.046|0.372
0.055|
|||7.10
9.80|7.90
10.31|0.280
0.386|0.311
0.406|
|||8.60
2.54
6.50||0.339
0.256
0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930
16.05|16.25
950|0.632
0366|0.640
0374|
|||.
4.50
|.
4.70
|.
0.177
|.
0.185
|
|||10.70
|10.90
|0.421
|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.2 2019-10-18
AIGB40N65F5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
Figure C. Definition of diode switching
characteristics
**----- End of picture text -----**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
12
V�2.2 2019-10-18
Datasheet
AIGB40N65F5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Revision�History**
AIGB40N65F5
## **Revision:�2019-10-18,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2019-06-07|Final Datasheet|
|2.2|2019-10-18|updated fig.15|
13
V�2.2 2019-10-18
Datasheet
## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/AIGB40N65F5ATMA1/igbt-74-a-16-v-250-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aigb40n65f5atma1/transistor-igbt-650v-74a-to-263/dp/3582433)
---
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