# IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-263 (D2PAK), 3 Pins
**URL**: https://novapart.co/products/AIGB30N65H5ATMA1/igbt-55-a-165-v-188-w-650-to-263-d2pak-3-pins
**SKU**: AIGB30N65H5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.5700
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 188W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 55A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3582432/)
## AIGB30N65H5
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High speed IGBT in TRENCHSTOP _ TM 5 technology
Features and Benefits:
High speed H5 technology offering:
Best-in-Class efficiency in hard switching and resonant
topologies
Plug and play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge Q G
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Applications:
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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIGB30N65H5|650V|30A|1.65V|175°C|AG30EH5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-18
AIGB30N65H5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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AIGB30N65H5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_C||55.0
35.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||90.0|A|
|Turn off safe operating area
_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||90.0|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±30|V|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||188.0
93.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Thermal resistance, min. footprint
junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on
PCB
junction - ambient|_R_th(j-a)||-|-|40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.65
1.85
1.95|2.10
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V
_T_vj=25°C
_T_vj=175°C|-
-|-
1000|40
-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|30.0|-|S|
1) Defined by design. Not subject to production test.
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AIGB30N65H5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|10|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,
_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=15.0A,
_V_GE=0.0/15.0V,
_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|184|-|ns|
|Fall time|_t_f||-|24|-|ns|
|Turn-on energy|_E_on||-|0.32|-|mJ|
|Turn-off energy|_E_off||-|0.09|-|mJ|
|Total switchingenergy|_E_ts||-|0.41|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=5.0A,
_V_GE=0.0/15.0V,
_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|188|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.14|-|mJ|
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Datasheet
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AIGB30N65H5
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## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=15.0A,
_V_GE=0.0/15.0V,
_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|203|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.44|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.55|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=5.0A,
_V_GE=0.0/15.0V,
_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|215|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.20|-|mJ|
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Datasheet
5
AIGB30N65H5
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**----- Start of picture text -----**
200 60
180
FEES 50 NOT
160 NAtty ON
140
e -XPET 2 EN
40
120
100 30
Nee: \
80
PFEPNESE TENE
20
et] 60 oF IN 8 \
40
PEASE 10 PETES
20
aN LN
0 P| Et [LIN] 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]
P tot I C
**----- End of picture text -----**
> Figure 1. Power **temperature** ( _T_ vj ≤ 175°C)
Figure 2. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
**==> picture [469 x 285] intentionally omitted <==**
**----- Start of picture text -----**
90 90
VGE=18V
80 ae a 80 YY
15V
70 12V 70 VGE=18V
10V 15V
60 60
8V 12V
7V 10V
50 50
6V 8V
40 5V 40 7V
4V 6V
30 30
5V
20 20 4V
10 10
0 0
0 1 2 3 4 5 0 1 2 3 4 5
V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]
I C I C
**----- End of picture text -----**
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
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Datasheet
2019-10-18
AIGB30N65H5
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**----- Start of picture text -----**
90 2.50
IC = 7.5A
Tvj = 25°C IC = 15A
8070 “T Tvj = 150°C T 2.25 IC = 30A
_ fpf| 3E 2.00
60
Pa rE
im 5 50 | th
w oa 1.50
: 40 =rm
a FE 1.25
A /
30
9 / oe
1.00
20 O
/
/ 0.75
10
0 0.50
4 5 6 7 8 9 10 0 25 50 75 100 125 150 175
V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]
I C
CEsat
V
**----- End of picture text -----**
Figure 5. Typical ( _V_ CE=20V)
Figure 6. Typical a function ( _V_ GE=15V)
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1000 a 1000 a SS SS ES ES
| 1 td(off) poa | td(off) Ee ee
I tf pot TT | tf a ee ee ee ee
td(on) td(on)
tr tr
| p | ft | tT | a eee
Pitot | | | | tT | | ott | | ht
100 100
itty ttt ys P e
ip) po eT (Sa ee
uw poa a hket ip)
= Nae a a
- aa a aekes eeeeee ee = aa eeeeeeeeeee
Q eee eee pf | ee em Teeter |
=tLe_ = eee- Tet
E E aay
pie TTT yg Per
2) 10 2) 10 Ss
- ee - ER
ee ER
a
a ee ee ee ee ee ee ee Se s e ee e e
ee ee ee ee eee a De De
P| | | | dt Po | ot tT | dT
1 1
0 10 20 30 40 50 60 70 80 90 100 5 15 25 35 45 55 65 75 85
I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]
t t
**----- End of picture text -----**
Figure 7.
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**----- Start of picture text -----**
Datasheet
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**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, r G=23 Ω , Dynamic test
Figure E)
**----- End of picture text -----**
Figure 8. Typical **resistor**
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, I C =15A,Dynamic test
Figure E)
**----- End of picture text -----**
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AIGB30N65H5
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1000 aEsa Rs 5.5
| td(off) a ee ee ee typ.
tf min.
td(on) 5.0 max.
I a eeee
tr
n O
4.5
e —_—_—_————e ee b A
> <
ry= 100 a e es e 1a 4.0 _—~ “a, ss) .
on a i x
im a Oo . a
- a Ww 3.5 NN ‘
3.0
Boo eaesshesseszscocgocsccgeccocteeeef ~ \.
:= =e3 sy ~~ NON\
2) 10 a eS = 2.5
7 a 7 ~
poaaa wi NX
aeseo) 2.0 Ny \
1.5
\
\
1 1.0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]
t
GE(th)
V
**----- End of picture text -----**
Figure 9.
Figure 10.
**==> picture [471 x 386] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, V CE =400V, V GE=15/0V, ( I C=0.3mA)
I C =15A, r G=23 ,Dynamic test circuit in Figure
E)
6.0 1.1
Eoff Eoff
5.5 Eon 1.0 Eon
Ets f Ets 7
a Fj } tt fe
5.0 ee ee
ee e e 0.9
= 4.5 7Ate= | e,
Bt tt 0.8 ’
} 4.0 v2 ¢
re ; ett 0.7 | eft
> a 3.5 7 =
0.6
eg ft/ 25 7 7
3.0
: 4 |
ef v4 7 z 0.5 o -
zw Sor BL ee eT
2 | 2.5 Bee
Zz ; Se
= 4 Zz 0.4 A 2
O 2.0 | [|||] 7YE | | OSs eo
PA Oe 0.3 ee
1.5
A 0.2 —<
° 1.0 C7 | baer ye | | e
ae A —
0.5 0.1
ean pt tee y | tt
ee
0.0 0.0
tT | CL
0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85
I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]
Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a
function of collector current function of gate resistor
(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, r G=23 Ω ,Dynamic test circuit in V GE =15/0V, I C =15A, Dynamictest circuit in
Figure E) Figure E)
E E
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**----- Start of picture text -----**
Datasheet
**----- End of picture text -----**
8
2019-10-18
AIGB30N65H5
**==> picture [489 x 286] intentionally omitted <==**
**----- Start of picture text -----**
0.7 0.7
Eoff Eoff
Eon Eon
Ets Ets a“
0.6 0.6
of
5 _eor ay oo
Wwo 0.5 Luo 0.5 ° 7? a
o Bo “ oo
° -_ - ~ —_ o a“a
> 0.4 = 5 0.4 7
2 -- q a
Ww eo Ww peat yr
fi 0.3 — fi 0.3 a 4
= = -
S) S) -
EE
0.2 0.2
n
n a
0.1 0.1
0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500
T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
E E
**----- End of picture text -----**
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E)
Figure 14.
(inductive load, _T_ vj = 150°C, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E)
**==> picture [474 x 322] intentionally omitted <==**
**----- Start of picture text -----**
16
— V CC a30V [ Cies 7
V CC Co(er)
14 1E+4 I= Coes (2
7/ H Cres oe
I LS eS
_ 12 |; aa a
=Ww 7 e e eee
1000
F 10 s _———
O> VZ uw aSS
Vs / 2 a a ee ee ee ee ee
ke 8 VA —< p ot TE
100
E Bae Aaa 5 f | | | | |
tt 6 / oO E E
Mu a SD rePS ee a
x SR a in leti
4
10
aa
2 a
0 PLE EE 1 Pot | |
0 10 20 30 40 50 60 70 80 0 50 100 150 200 250 300 350 400
Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of
( I C=30A) collector-emitter voltage
( V GE =0V, f=1MHz)
C
GE
V
**----- End of picture text -----**
9
Datasheet
2019-10-18
AIGB30N65H5
**==> picture [234 x 263] intentionally omitted <==**
**----- Start of picture text -----**
1
_ Se
= pH eee eT
YZ |
aT ee
S CSS
eg ae D = 0.5
0.2
3 0.1 He llANI
0.1
4 ee Ty eee
~¢ PT TA a a |
owS BP) Ae: 0.05 a|
0.02
ul ble nate HHH
PTT 0.01
c A eT
single pulse
c SH ee
LUei 0.01 [4 cueLE
Zz LL
< Ro nt 1 Ro [i
a | a |
i- SFPAINSti Sn ci gwot}rugg
AoI TN om har,tootcostes oooill
CAYCE i: 1 2 Tc 3 4 5 6
ri[K/W]: 7.5E-3 0.179623 0.30962 0.262097 0.022228 2.2E-3
τ i[s]: 1.4E-5 2.6E-4 1.6E-3 8.2E-3 0.126279 2.036965
(| 4 Lt
0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
t p , PULSE WIDTH [s]
c)th(j-
Z
**----- End of picture text -----**
> Figure 17. IGBT ( _D_ = _t_ p/T)
10
Datasheet
2019-10-18
AIGB30N65H5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
**==> picture [112 x 124] intentionally omitted <==**
**==> picture [43 x 105] intentionally omitted <==**
**==> picture [140 x 91] intentionally omitted <==**
|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00
|0.25
|0.000
|0.010
|
|||0.65
0.95|1.15
0.85|0.026
0.037|0.033
0.045|
|||0.33
|0.65
|0.013
|0.026
|
|||8.51
1.17|9.45
1.40|0.335
0.046|0.372
0.055|
|||7.10
9.80|7.90
10.31|0.280
0.386|0.311
0.406|
|||8.60
2.54
6.50||0.339
0.256
0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930
16.05|16.25
950|0.632
0366|0.640
0374|
|||.
4.50
|.
4.70
|.
0.177
|.
0.185
|
|||10.70
|10.90
|0.421
|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.1 2019-10-18
AIGB30N65H5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
Figure C. Definition of diode switching
characteristics
**----- End of picture text -----**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
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**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
12
V�2.1 2019-10-18
Datasheet
AIGB30N65H5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Revision�History**
AIGB30N65H5
## **Revision:�2019-10-18,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-18|Final Datasheet|
13
V�2.1 2019-10-18
Datasheet
## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/AIGB30N65H5ATMA1/igbt-55-a-165-v-188-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/aigb30n65h5atma1/transistor-igbt-650v-55a-to-263/dp/3582432)
---
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