# Silicon Carbide Schottky Diode, CoolSiC 5G Series, Single, 650 V, 10 A, 15 nC, TO-263

![Product image](https://novapart.co/image/farnell:3500934RL/)

**URL**: https://novapart.co/products/AIDK10S65C5ATMA1/silicon-carbide-schottky-diode-coolsic-5g-series
**SKU**: AIDK10S65C5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €2.1100
**Stock**: 100+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | CoolSiC 5G Series |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 15nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3500934RL/)

AIDK10S65C5 

## CoolSiC™ Automotive Schottky Diode 650V G5 

## 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

## Features 

- Revolutionary semiconductor material - Silicon Carbide 

- Benchmark switching behavior 

- No reverse recovery/ No forward recovery 

- Temperature independent switching behavior 

- High surge current capability 

- Pb-free lead plating; RoHS compliant 

- Junction Temperature range from  -40°C to 175°C 

- System efficiency improvement over Si diodes 

- System cost / size savings due to reduced cooling requirements 

- Enabling higher frequency / increased power density solutions 

- Higher system reliability due to lower operating temperatures 

- Reduced EMI 

## Potential Applications 

- Traction inverter 

- Booster / DCDC Converter 

- On board Charger / PFC 

## Product Validation 

“Qualified for Automotive Applications. Product Validation according to AEC-Q100/101” 

## Description 

The 5th Generation CoolSiC™Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™portfolio. This ensures meeting the most stringent application requirements in the 650V voltage class. 

|Product Information|Product Information|Parameter|Value/Unit|Pin|Definition|
|---|---|---|---|---|---|
|OrderingCode|AIDK10S65C5|VDC,max|650 V|Pin 1,case|Cathode|
|Marking|AD1065C5|IF; TC< 124 °C|10 A|Pin 2|Anode|
|Package|PG-TO263-2-1|QC; VR= 400 V|15 nC|||
|SP Number|SP001725150|EC; VR= 400 V|3.5 μJ|||
|||Tj,max|175 °C|||



Datasheet 

Please read the Important Notice and Warnings at the end of this document Page 1 of 11 

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CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

Table of Contents 

## Table of Contents 

|Table of Contents||
|---|---|
|Features…………………………………………………………………………………………………………..……|1|
|Potential Applications………………………………………………………………………………………..………|1|
|Product Validation………………………………………………..…………………………………………………|1|
|Description……………………………………………..……………………………………………………………|1|
|Table of Contents……………………………………………..………………………………………………………|2|
|1          Maximum Ratings…………………………………………..…………………………………………………|3|
|2          Thermal Characteristics………………………………………..……………………………………………|4|
|3          Electrical Characteristics……………………………………………..………………………………………|5|
|4          Electrical Characteristics Diagrams…………………………………………..……………………………|6|
|5          Package Outlines………………………………………………………………………..……………………|9|
|Revision History………………………………………………………………………..……………………………|10|



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CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

Maximum Ratings 

|Maximum ratings1<br>Table 1||||
|---|---|---|---|
|Parameter|Symbol<br>~~|~~|Value<br>~~|~~|Unit|
|Repetitive peak reverse voltage|VRRM|650|V|
|Continuous forward current for RthJC,max<br>TC= 124 °C, D=1|IF<br>~~|~~|10<br>~~|~~|A|
|Surge non-repetitive forward current,<br>sine halfwave<br>TC= 25°C, tp=10ms<br>TC= 150°C, tp=10ms|IF,SM|42<br>33|A|
|Non-repetitive peak forward current<br>TC= 25°C, tp=10μs|IF,max|431|A|
|i²t value<br>TC= 25°C, tp=10ms<br>TC= 150°C, tp=10ms|∫i_2_ dt|5<br>9|A2s|
|Diode dv/dt ruggedness<br>VR=0...480V|dv/dt|100|V/ns|
|Power dissipation<br>TC= 25°C|Ptot|53|W|
|Operating temperature|Tj<br>~~Pf~~|-40…175<br>~~Pf~~|°C|
|Storage temperature<br>~~|~~|Tstg<br>~~|~~|-55…150<br>|°C|
|ESD<br>Human body model, R= 1.5 kΩ, C = 100 pF<br>Charged device model<br>~~|~~|~~||~~|8<br>2<br>~~|~~|kV|



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Thermal Characteristics 

## 2 Thermal Characteristics 

|Table 2|Thermal Characteristics1|Thermal Characteristics1||||||||
|---|---|---|---|---|---|---|---|---|---|
||||||Values|||||
|Parameter|||Symbol|||||Unit|Note/Test condition|
|||||Min.|Typ.||Max.|||
|Thermal resistance, junction–case2|||RthJC|-|2.2||2.9|K/W||
|Thermal resistance, junction-ambient2|||RthJA|-|-||62|K/W||



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CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

Electrical Characteristics 

## 3 

## Electrical Characteristics 

|Static Characteristics<br>Table 3|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol<br>~~eee~~|Values<br>~~eee~~|||Unit<br>~~eee~~|Note/Test condition|
|||Min.<br>~~eee~~<br>~~ft~~|Typ.<br>~~eee~~<br>~~ft|~~|Max.<br>~~eee~~<br>~~|~~|||
|DC blocking voltage|VDC<br>~~FT~~|650<br>~~ft~~<br>~~FT~~<br>~~td~~|-<br>~~ft |~~<br>~~FT~~<br>~~td~~|-<br>~~|~~<br>~~FT~~<br>~~td~~|V|Tj= 25°C, IR= 0.06 mA|
|Diode forward voltage3|VF<br>~~HE~~|-<br>~~td~~<br>~~HE~~<br>~~eft~~|1.5<br>~~td~~<br>~~HE~~<br>~~eftft~~|1.7<br>~~td~~<br>~~HE~~<br>~~ft~~||Tj= 25°C, IF= 10 A|
|||-<br>~~HE~~<br>~~eft~~|1.8<br>~~HE~~<br>~~eftft~~|2.1<br>~~HE~~<br>~~ft~~||Tj= 150°C, IF= 10 A|
|Reverse current|IR<br>~~HEE~~|-<br>~~eft~~<br>~~HEE~~<br>~~ft~~|2<br>~~eft ft~~<br>~~HEE~~<br>~~fti~~|60<br>~~ft~~<br>~~HEE~~<br>~~i~~|µA<br>~~HEE~~|VR= 650 V, Tj= 25 °C|
|||-<br>~~HEE~~<br>~~ft~~|12<br>~~HEE~~<br>~~fti~~|-<br>~~HEE~~<br>~~i~~||VR= 650 V, Tj= 150 °C|



|Parameter|Symbol<br>~~eee~~|Values<br>~~eee~~|Values<br>~~eee~~|Values<br>~~eee~~|Unit<br>~~eee~~|Note/Test condition|
|---|---|---|---|---|---|---|
|||Min.<br>~~eee~~|Typ.<br>~~eee~~|Max.<br>~~eee~~|||
|Total capacitive charge|QC|-|15|-|nC|VR= 400 V, di/dt = 200 A/µs,<br>IF≤ IF,MAX, Tj= 150 °C|
|Total capacitance|C|-<br>~~| ~~<br>~~[|~~|303<br> ~~|~~<br>~~[| f~~|-<br>~~|~~<br>~~f~~|pF|VR= 1 V, f = 1 MHz|
|||-<br>~~[|~~<br>~~P|~~|40<br>~~[| f~~<br>~~P|ft~~|-<br>~~f~~<br>~~ft~~||VR= 300 V, f = 1 MHz|
|||-<br>~~[|~~<br>~~P|~~|39<br>~~[| f~~<br>~~P|ft~~|-<br>~~f~~<br>~~ft~~||VR= 600 V, f = 1 MHz|



## Footnotes: 

> 1 The parameter is not subject to production test- verified by design/characterization. 

> 2 Rth,JC defined as per JESD-51-14. Rth,JA defined as per JESD-51-5/7. 

> 3 Only the value at 25°C is subject to production test. The value at 150°C is only verified by design/characterization. 

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Electrical Characteristics Diagrams 

**==> picture [313 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 Electrical Characteristics Diagrams<br>**----- End of picture text -----**<br>


Figure 1 

(LEFT) Power dissipation; Ptot= f(TC); RthJC,max 

(RIGHT) Diode forward current; IF= f(TC); Tj≤ 175 °C; RthJC,max; parameter: D=duty cycle 

Figure 2 (LEFT) Typical forward characteristic; IF= f(VF); tP=20 μs; parameter:Tj 

(RIGHT) Typical forward characteristics in surge current; I F= f(VF); tP=20 μs; parameter:Tj 

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CoolSiC™ Automotive Schottky Diode 650V G5 

650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

## Electrical Characteristics Diagrams 

Figure 3 (LEFT) Typical capacitive charge versus current slope (only capacitive charge, guaranteed by design); QC= f(diF/dt); Tj=150°C; VR=400V; IF **≤ IF,max** 

**(RIGHT) Typical reverse current versus reverse voltage; IR= f(VR);parameter: Tj** 

**==> picture [236 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
i 1 2 3 4<br>ri [K/W] 7.41E-01 3.00E-01 8.08E-01 3.50E-01<br>Ti [s] 6.80E-04 1.00E-03 4.19E-03 3.14E-02<br>**----- End of picture text -----**<br>


Figure 4 

(LEFT) Max. Transient thermal impedance; ZthJC= f(tP); parameter:D=tP/T (RIGHT) Typ. Capacitance vs. Reverse voltage; C= f(VR); Tj=25°C; f=1 MHz 

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650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

Electrical Characteristics Diagrams 

Figure 5 Typical capacitance stored energy; EC= f(VR) 

|A =|-9.2E-04|[V/°C]|
|---|---|---|
|B =|1.0E+00|[V]|
|C =|1.3E-06|[**Ω/(°C)2**]|
|D =|7.3E-05|[**Ω/°C**]|
|E =|4.1E-02|[**Ω**]|



Figure 6 Simplified forward characteristics model VF= f(IF); 

**==> picture [132 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
-40°C < Tj <175°C;  IF< 20 A<br>**----- End of picture text -----**<br>


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650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

## Package Outlines 

**==> picture [191 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 Package Outlines<br>**----- End of picture text -----**<br>


Figure 6 Package outline of PG-TO263-2-1 leaded 

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650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) 

Revision History 

## Revision History 

|Document<br>Version|Date of Release|Description of changes|
|---|---|---|
|V3.0|11.06.2019<br>~~po~~|1st release of Data Sheet|
||~~po~~||
||~~po~~||
||~~Pp~~||



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## Trademarks 

All referenced product or service names and trademarks are the property of their respective owners. 

||IMPORTANT NOTICE||
|---|---|---|
|Edition 2019-06-11|||
||The information given in this document shall in no event|For<br>further<br>information<br>on<br>the<br>product,|
|Published by|be regarded as a guarantee of conditions or characteristics|be regarded as a guarantee of conditions or characteristics<br>technology, delivery terms and conditions and|
|Infineon Technologies AG|(“Beschaffenheitsgarantie”) .|prices please contact your nearest Infineon|
|81726 München, Germany||Technologies office(www.infineon.com).|
||With respect to any examples, hints or any typical values||
|© 2017 Infineon Technologies AG.|stated herein and/or any information regarding the|WARNINGS|
|All Rights Reserved.|application of the product, Infineon Technologies hereby|Due to technical requirements products may|
||disclaims any and all warranties and liabilities of any kind,|contain dangerous substances. For information|
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|document?|infringement of intellectual property rights of any third|nearest Infineon Technologies office.|
|Email:erratum@infineon.com|party.||
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||stated in this document and any<br>applicable legal|signed by authorized representatives of Infineon|
||requirements,<br>norms<br>and<br>standards<br>concerning|Technologies, Infineon Technologies’ products|
||customer’s products and any use of the product of|may not be used in any applications where a|
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||information given in this document with respect to such||
||application.||



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