# IGBT, 240 A, 1.6 V, 882 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3615720/)

**URL**: https://novapart.co/products/AFGY160T65SPD-B4/igbt-240-a-16-v-882-w-650-to-247-3-pins
**SKU**: AFGY160T65SPD-B4
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €6.7800
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 882W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 240A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615720/)

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## Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 

## 650 V, 160 A 

## AFGY160T65SPD-B4 

## **Features** 

- AEC−Q101 Qualified and PPAP Capable 

- Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A 

- Maximum Junction Temperature: TJ = 175  C 

- Positive Temperature Co−Efficient 

- Tight Parameter Distribution 

**==> picture [79 x 225] intentionally omitted <==**

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C<br>G<br>E<br>G<br>C<br>E<br>TO−247−3LD<br>CASE 340CU<br>**----- End of picture text -----**<br>


- High Input Impedance 

- 100% of the Parts are Dynamically Tested 

## **MARKING DIAGRAM** 

- Short Circuit Ruggedness > 6 s @ 25  C 

- Copacked with Soft, Fast Recovery Extremefast Diode 

- This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Benefits** 

- Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications 

- Rugged Transient Reliability 

- Outstanding Parallel Operation Performance with Balance Current Sharing 

- Low EMI 

## **Applications** 

- Traction Inverter for HEV/EV 

**==> picture [170 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
$Y&Z&3&K<br>AFGY160T<br>65SPD&B<br>$Y =  onsemi  Logo<br>&Z = Assembly Plant Code<br>&3 = Date Code (Year & Week)<br>&K = Lot Traceability Code<br>AFGY160T65SPD = Specific Device Code<br>&B = BIN Designator<br>**----- End of picture text -----**<br>


- Auxiliary DC/AC Converter 

- Motor Drives 

- Other Power−Train Applications Requiring High Power Switch 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **AFGY160T65SPD−B4/D** 

**1** 

 Semiconductor Components Industries, LLC, 2017 **July, 2024 − Rev. 3** 

**AFGY160T65SPD−B4** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**|**Parameter**|**Ratings**|**Unit**|
|---|---|---|---|
|VCES|Collector to Emitter Voltage|650|V|
|VGES|Gate to Emitter Voltage|20|V|
||Transient Gate to Emitter Voltage|30|V|
|IC|Collector Current @ TC= 25C (Note 1)|240|A|
||Collector Current @ TC= 100C|220|A|
|INominal|Nominal Current|160|A|
|ICM|Pulsed Collector Current|480|A|
|IFM|Diode Forward Current @ TC= 25C (Note 1)|240|A|
||Diode Forward Current @ TC= 100C|188|A|
|PD|Maximum Power Dissipation @ TC= 25C|882|W|
||Maximum Power Dissipation @ TC= 100C|441|W|
|SCWT|Short Circuit Withstand Time @ TC= 25C|6|s|
|V/ t|Voltage Transient Ruggedness (Note 2)|10|V/ns|
|TJ|Operating Junction Temperature|−55 to +175|C|
|Tstg|Storage Temperature Range|−55 to +175|C|
|TL|Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds|300|C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited to bondwire. 

2. VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|R JC(IGBT)|Thermal Resistance, Junction to Case|−|0.17|C/W|
|R JC(Diode)|Thermal Resistance, Junction to Case|−|0.32|C/W|
|R JA|Thermal Resistance, Junction to Ambient|−|40|C/W|



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Device Marking**|**Device**|**Bin Designator**|**Packing Type**|**Qty per Tube/Reel***|
|---|---|---|---|---|
|AFGY160T65SPDA|AFGY160T65SPD−B4|A|Tube|30|
|AFGY160T65SPDB|AFGY160T65SPD−B4|B|Tube|30|
|AFGY160T65SPDC|AFGY160T65SPD−B4|C|Tube|30|
|AFGY160T65SPDD|AFGY160T65SPD−B4|D|Tube|30|



*Generally all tubes in one box will belong to the same bin. In rare and unusual cases there may be tubes from more than one bin inside one box. Such mixing would not be considered a quality excursion. The primary container quantity (MPQ) for these binning products is 30 units and therefore partial box shipment can be expected. 

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**AFGY160T65SPD−B4** 

## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TJ = 25C unless otherwise noted) 

|**Symbol**<br>**Parameter**<br>**OFF CHARACTERISTICS**<br>~~Po~~|**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**|
|---|---|
|BVCES<br>Collector to Emitter Breakdown Voltage<br>VGE= 0 V, IC= 1 mA<br>650<br>−<br>−<br>V<br>~~a eG~~||
|BVCES/<br>TJ<br>Temperature Coefficient of Breakdown Voltage<br>VGE= 0 V, IC= 1 mA<br>−<br>0.6<br>−<br>V/C<br>ICES<br>Collector Cut-Off Current<br>VCE= VCES, VGE= 0 V<br>−<br>−<br>40<br>A<br>IGES<br>G−E Leakage Current<br>VGE= VGES, VCE= 0 V<br>−<br>−<br>250<br>nA<br>~~a~~<br>~~aGO~~<br>~~GO~~<br>~~Da~~<br>~~GG~~||
|**ON CHARACTERISTICS**||
|VGE(th)A<br>G−E Threshold (Bin A)<br>~~a~~|Ic = 160 mA; VCE= VGE<br>5.15<br>5.5<br>6.3<br>V|
|VCE(sat)A<br>Collector to Emitter Saturation Voltage (Bin A)<br>~~a~~|Ic = 160 A; VGE= 15 V<br>1.5<br>1.6<br>1.67<br>V|
|VGE(th)B<br>G−E Threshold (Bin B)<br>~~a~~|Ic = 160 mA; VCE= VGE<br>5.15<br>5.5<br>6.3<br>V|
|VCE(sat)B<br>Collector to Emitter Saturation Voltage (Bin B)<br>~~a~~|Ic = 160 A; VGE= 15 V<br>1.57<br>1.64<br>2.05<br>V|
|VGE(th)C<br>G−E Threshold (Bin C)<br>~~a a~~|Ic = 160 mA; VCE= VGE<br>4.3<br>5.3<br>5.65<br>V|
|VCE(sat)C<br>Collector to Emitter Saturation Voltage (Bin C)<br>~~a~~<br>~~a~~|Ic = 160 A; VGE= 15 V<br>1.5<br>1.6<br>1.67<br>V|
|VGE(th)D<br>G−E Threshold (Bin D)<br>~~a~~<br>~~a~~|Ic = 160 mA; VCE= VGE<br>4.3<br>5.3<br>5.65<br>V<br>~~GO~~|
|VCE(sat)D<br>Collector to Emitter Saturation Voltage (Bin D)<br>~~a~~<br>~~a~~|Ic = 160 A; VGE= 15 V<br>1.57<br>1.64<br>2.05<br>V|
|VGE(th)<br>G−E Threshold<br>Ic = 160 mA; VCE= VGE<br>4.3<br>5.3<br>6.3<br>V<br>VCE(sat)<br>Collector to Emitter Saturation Voltage<br>Ic = 160 A; VGE= 15 V<br>−<br>1.6<br>2.05<br>V<br>Ic = 160 A; VGE= 15 V;<br>TJ= 175C<br>−<br>2.15<br>−<br>V<br>**DYNAMIC CHARACTERISTICS**<br>~~a~~<br>~~Ge~~<br>~~a~~<br>~~ee ee~~<br>~~re~~<br>~~ee eee ee~~||
|Cies<br>Input Capacitance<br>VCE= 30 V,VGE= 0 V,<br>f = 1 MHz<br>−<br>6710<br>−<br>pF<br>Coes<br>Output Capacitance<br>−<br>450<br>−<br>pF<br>Cres<br>Reverse Transfer Capacitance<br>−<br>55<br>−<br>pF<br>RG<br>Internal Gate Resistance<br>f = 1 MHz<br>−<br>3<br>−<br>~~es~~<br>~~ee~~<br>~~re ee ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~re ee ee~~<br>~~ee~~<br>~~ae~~<br>~~ee~~<br>~~re ee ee~~<br>~~ee~~<br>~~pe~~||
|**SWITCHING CHARACTERISTICS**||
|Td(on)<br>Turn-On Delay Time<br>Tr<br>Rise Time<br>Td(off)<br>Turn-Off Delay Time<br>Tf<br>Fall Time<br>Eon<br>Turn-On Switching Loss<br>Eoff<br>Turn-Off Switching Loss<br>Ets<br>Total Switching Loss<br>Td(on)<br>Turn-On Delay Time<br>Tr<br>Rise Time<br>Td(off)<br>Turn-Off Delay Time<br>Tf<br>Fall Time<br>Eon<br>Turn-On Switching Loss<br>Eoff<br>Turn-Off Switching Loss<br>Ets<br>Total Switching Loss<br>~~a ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ae~~<br>~~ee~~<br>~~a ee~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~|VCC= 400 V, IC= 160 A,<br>RG= 5<br>VGE= 15 V,<br>Inductive Load, TJ= 25C<br>−<br>53<br>−<br>ns<br>−<br>197<br>−<br>ns<br>−<br>98<br>−<br>ns<br>−<br>141<br>−<br>ns<br>−<br>12.4<br>−<br>mJ<br>−<br>5.7<br>−<br>mJ<br>−<br>18.1<br>−<br>mJ<br>VCC= 400 V, IC= 160 A,<br>RG= 5<br>VGE= 15 V,<br>Inductive Load, TJ= 175C<br>−<br>52<br>−<br>ns<br>−<br>236<br>−<br>ns<br>−<br>104<br>−<br>ns<br>−<br>204<br>−<br>ns<br>−<br>21<br>−<br>mJ<br>−<br>8.5<br>−<br>mJ<br>−<br>29.5<br>−<br>mJ<br>~~re ee ee~~<br>~~ee~~<br>~~es ee ee ee~~<br>~~es ee ee ee~~<br>~~re ee~~<br>~~ee~~<br>~~ee~~<br>~~re ee ee ee~~<br>~~re ee ee ee~~<br>~~re ee ee ee~~<br>~~re ee ee~~<br>~~ee~~<br>~~re ee ee~~<br>~~ee~~<br>~~re ee ee~~<br>~~ee~~<br>~~re ee ee ee~~<br>~~re ee ee ee~~<br>~~re ee ee~~<br>~~ee~~<br>~~a~~|



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**AFGY160T65SPD−B4** 

**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TJ = 25C unless otherwise noted) (continued) 

|**Symbol**<br>**Parameter**<br>**SWITCHING CHARACTERISTICS**<br>~~a~~|**Symbol**<br>**Parameter**<br>**SWITCHING CHARACTERISTICS**<br>~~a~~|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
||Qg<br>Total Gate Charge<br>Qge<br>Gate to Emitter Charge|VCE= 400 V, IC= 160 A,<br>VGE= 15 V|−<br>−|163<br>50|245<br>−|nC<br>nC|
||Qgc<br>Gate to Collector Charge||−|49|−|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**ELECTRICAL CHARACTERISTICS OF THE DIODE** (TJ = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS OF THE DIODE**|**ELECTRICAL CHARACTERISTICS OF THE DIODE**|**ELECTRICAL CHARACTERISTICS OF THE DIODE**(TJ = 25C unless otherwise noted)J = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS OF THE DIODE**(TJ = 25C unless otherwise noted)J = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TJ = 25C unless otherwise noted)J = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~pO~~<br>~~a~~|**Parameter**<br>~~pO~~<br>~~a~~|**Test Conditions**<br>~~pO~~<br>~~a~~<br>~~ee~~||**Min.**<br>~~pO~~<br>~~ee ee~~|**Typ.**<br>~~pO~~<br>~~ee~~|**Max.**<br>~~pO~~<br>~~ee~~|**Unit**<br>~~pO~~<br>~~ee~~|
|VFM<br>~~a~~|Diode Forward Voltage<br>~~a~~|IF= 160 A<br>~~a~~|TJ= 25C<br>~~ee~~|−<br>~~ee ee~~|1.4<br>~~ee~~|1.7<br>~~ee~~|V<br>~~ee~~|
||||TJ= 175C<br>~~ee~~|−<br>~~ee ee~~|1.35<br>~~ee~~|−<br>~~ee~~||
|Erec<br>~~a ~~<br>~~ee~~<br>~~Pf~~|Reverse Recovery Energy<br> ~~a~~<br>~~ee~~<br>~~Pf~~|VCE= 400 V, IF= 160 A,<br>IF/ t = 1000 A/ s<br>~~a~~<br>~~ee~~|TJ= 25C<br>~~ee~~<br>~~ee~~|−<br>~~ee ee~~<br>~~ee~~|598<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~|J<br>~~ee~~<br>~~ee~~<br>~~et~~|
||||TJ= 175C<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~et~~|4000<br>~~ee~~<br>~~et~~|−<br>~~ee~~<br>~~et~~||
|Trr<br>~~Pf~~|Diode Reverse Recovery<br>Time<br>~~Pf~~||TJ= 25C<br>~~ee~~|−<br>~~et~~|132<br>~~et~~|−<br>~~et~~|ns<br>~~et~~|
||||TJ= 175C<br>~~ee~~|−<br>~~et~~|245<br>~~et~~|−<br>~~et~~||
|Qrr<br>~~Pf~~<br>~~pt~~|Diode Reverse Recovery<br>Charge<br>~~Pf~~<br>~~pt~~||TJ= 25C<br>~~ee~~<br>~~—~~|−<br>~~et~~|3.3<br>~~et~~|−<br>~~et~~|C<br>~~et~~|
||||TJ= 175C<br>~~—~~|−|12.5|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**AFGY160T65SPD−B4** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 1. Typical Output Characteristics** 

**Figure 2. Typical Output Characteristics** 

**Figure 3. Typical Saturation Voltage Characteristics** 

**Figure 4. Transfer Characteristics** 

**Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level** 

**Figure 6. Saturation Voltage vs. VGE** 

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**AFGY160T65SPD−B4** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 7. Saturation Voltage vs. VGE** 

**Figure 8. Saturation Voltage vs. VGE** 

**Figure 9. Capacitance Characteristics** 

**Figure 10. Gate Charge Characteristics** 

**Figure 11. SOA Characteristics** 

**Figure 12. Turn Off Switching SOA Characteristics** 

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**AFGY160T65SPD−B4** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 13. Turn−on Characteristics vs. Gate Resistance** 

**Figure 14. Turn−off Characteristics vs. Gate Resistance** 

**Figure 15. Turn−on Characteristics vs. Collector Current** 

**Figure 16. Turn−off Characteristics vs. Collector Current** 

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**----- Start of picture text -----**<br>
50<br>Eon<br>10<br>Eoff Common Emitter<br>VCC = 400V, V GE = 15V<br>IC = 160A<br>TC = 25oC<br>TC = 175oC<br>1<br>0 10 20 30 40 50<br>Gate Resistance, R G [<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br>


**Figure 17. Switching Loss vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
100<br>Common Emitter<br>VGE = 15V, R G = 5<br>TC = 25oC<br>10 TC = 175oC E on<br>Eoff<br>1<br>0.1<br>0 20 40 60 80 100 120 140 160<br>Collector Current, IC [A]<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br>


**Figure 18. Switching Loss vs. Collector Current** 

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**AFGY160T65SPD−B4** 

**TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 19. Forward Characteristics** 

**Figure 21. Stored Charge** 

**Figure 20. Reverse Current** 

**Figure 22. Reverse Recovery Time** 

**Figure 23. Collector to Emitter Breakdown Voltage vs. Junction Temperature** 

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**AFGY160T65SPD−B4** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 24. Transient Thermal Impedance of IGBT** 

**Figure 25. Transient Thermal Impedance of Diode** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−247−3LD** CASE 340CU ISSUE B [7] 0.130 

DATE 28 OCT 2021 

## **GENERIC MARKING DIAGRAM*** 

XXXX = Specific Device Code *This information is generic. Please refer to AYWWZZ A = Assembly Site Code device data sheet for actual part marking. XXXXXXXXX Y = Year Pb−Free indicator, “G” or microdot “ ”, may XXXXXXXXX WW = Work Week or may not be present. Some products may ZZ = Assembly Lot Code not follow the Generic Marking. 

**DOCUMENT NUMBER: 98AON13773G** 

**DESCRIPTION: TO−247−3LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2018 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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