![A2C25S12M3 — IGBT Module, Three Phase CIB [Converter + Inverter + Brake], 25 A, 1.95 V, 197 W, 150 °C, Module](/media/4/E/E/4AB1AA2D5495BEE4.webp)
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A2C25S12M3
IGBT Module, Three Phase CIB [Converter + Inverter + Brake], 25 A, 1.95 V, 197 W, 150 °C, Module
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- Manufacturer: STMICROELECTRONICS
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:197W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
- SVHC: No SVHC (25-Jun-2025)
- Product Range: ACEPACK 2 M
- IGBT Technology: Trench Field Stop
- IGBT Termination: Solder
- Power Dissipation: 197W
- IGBT Configuration: Three Phase CIB [Converter + Inverter + Brake]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 25A
- Power Dissipation Pd: 197W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 25A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 37.95 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **A2C25S12M3** ACEPACK™ 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet - preliminary data ## **Features** - ACEPACK™ 2 power module DBC Cu Al2O3 Cu - Converter inverter brake topology - 1600 V, very low drop rectifiers for converter - 1200 V, 25 A IGBTs and diodes - VCE(sat): 1.95 V @ IC = 25 A - Soft and fast recovery diode - Integrated NTC ## **Applications** **Figure 1: Internal electrical schematic** - Inverters - Motor drives ## **Description** This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2 package with NTC, integrating the advanced trench gate fieldstop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. **Table 1: Device summary** |**Order code**|**Marking**|**Package**|**Leads type**| |---|---|---|---| |A2C25S12M3|A2C25S12M3|ACEPACK™ 2|Solder contactpins| This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. _www.st.com_ October 2017 DocID031093 Rev 1 1/19 **Contents** **A2C25S12M3** ## **Contents** |**1**|**Electrical ratings ............................................................................. 3**| |---|---| ||1.1<br>Inverter stage .................................................................................... 3| ||1.1.1<br>IGBTs.................................................................................................. 3| ||1.1.2<br>Diode .................................................................................................. 5| ||1.2<br>Brake stage ....................................................................................... 6| ||1.2.1<br>IGBT ................................................................................................... 6| ||1.2.2<br>Diode .................................................................................................. 8| ||1.3<br>Converter stage ................................................................................. 9| ||1.4<br>NTC ................................................................................................... 9| ||1.5<br>Package .......................................................................................... 10| |**2**|**Electrical characteristics curves .................................................. 11**| |**3**|**Test circuits ................................................................................... 14**| |**4**|**Topology and pin description ...................................................... 15**| |**5**|**Package information ..................................................................... 16**| ||5.1<br>ACEPACK™ 2 CIB solder pins package information ...................... 17| |**6**|**Revision history ............................................................................ 18**| 2/19 DocID031093 Rev 1 **A2C25S12M3** **Electrical ratings** ## **1 Electrical ratings** ## **1.1 Inverter stage** Limiting values at Tj= 25 °C, unless otherwise specified. ## **1.1.1 IGBTs** **Table 2: Absolute maximum ratings of the IGBTs, inverter stage** |**Symbol**|**Description**|**Value**|**Unit**| |---|---|---|---| |VCES|Collector-emitter voltage (VGE= 0)|1200|V| |IC|Continuous collector current at Tc= 100 °C|25|A| |ICP_(1)_|Pulsed collector current (tP= 1 ms)|50|A| |VGE|Gate-emitter voltage|± 20|V| |PTOT|Totalpower dissipation IGBT (TJMAX= 175 °C)|197|W| |TJMAX|Maximumjunction temperature|175|°C| |TJop|Operative temperature range under switchingconditions|-40 to 150|°C| ## **Notes:** (1)Pulse width limited by maximum junction temperature. DocID031093 Rev 1 3/19 **A2C25S12M3** **Electrical ratings** **Table 3: Electrical characteristics of the IGBTs, inverter stage** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)CES|Collector-emitter<br>breakdown voltage|IC= 1 mA, VGE= 0 V|1200|||V| |VCE(sat)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 25 A||1.95|2.45|V| |||VGE= 15 V, IC= 25 A,<br>TJ= 150 ˚C||2.3||V| |VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V| |ICES|Collector cut-off<br>current|VGE= 0 V, VCE= 1200 V|||100|μA| |IGES|Gate-emitter leakage<br>current|VCE= 0 V, VGE= ±20 V|||±500|nA| |Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V||1550||pF| |Coes|Output capacitance|||130||pF| |Cres|Reverse transfer<br>capacitance|||65||pF| |Qg|Total gate charge|VCC= 960 V, IC= 25 A,<br>VGE= ±15 V||80||nC| |td(on)|Turn-on delay time|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>di/dt = 1290 A/µs||109||ns| |tr|Current rise time|||15.3||ns| |Eon_(1)_|Turn-on switching<br>energy|||0.97||mJ| |td(off)|Turn-off delay time|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>dv/dt = 9600 V/µs||109||ns| |tf|Current fall time|||132||ns| |Eoff_(2)_|Turn-off switching<br>energy|||1.36||mJ| |td(on)|Turn-on delay time|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>di/dt = 1274 A/µs, TJ= 150 °C||109||ns| |tr|Current rise time|||16.2||ns| |Eon|Turn-on switching<br>energy|||1.49||mJ| |td(off)|Turn-off delay time|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>dv/dt = 8200 V/µs, TJ= 150 °C||122||ns| |tf|Current fall time|||216||ns| |Eoff|Turn-off switching<br>energy|||1.85||mJ| |tSC|Short-circuit withstand<br>time|VCC≤ 600V, VGE≤ 15 V,<br>Tjstart≤ 150 °C|10|||µs| |RTHj-c|Thermal resistance<br>junction to case|each IGBT||0.69|0.76|°C/W| |RTHc-h|Thermal resistance<br>case to heatsink|each IGBT,<br>λgrease= 1 W/(m·°C)||0.79||°C/W| ## **Notes:** (1) Including the reverse recovery of the diode. (2)Including also the tail of the collector current. 4/19 DocID031093 Rev 1 **A2C25S12M3** **Electrical ratings** ## **1.1.2 Diode** Limiting values at Tj= 25 °C, unless otherwise specified. **Table 4: Absolute maximum ratings of the diode, inverter stage** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VRRM|Repetitivepeak reverse voltage|1200|V| |IF|Continuous forward current at (TC= 100 °C)|25|A| |IFP_(1)_|Pulsed forward current|50|A| |TJMAX|Maximumjunction temperature|175|°C| |TJop|Operative temperature range under switchingconditions|-40 to 150|°C| ## **Notes:** (1)Pulse width limited by maximum junction temperature. **Table 5: Electrical characteristics of the diode, inverter stage** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VF|Forward voltage|IF= 25 A|-|2.95|4.1|V| |||IF= 25 A, TJ= 150 ˚C|-|2.3||| |trr|Reverse recoverytime|IF= 25 A, VR= 600 V,<br>VGE= ±15 V,<br>diF/dt = 1290 A/μs|-|190||ns| |Qrr|Reverse recoverycharge||-|1.53||µC| |Irrm|Reverse recoverycurrent||-|29||A| |Erec|Reverse recoveryenergy||-|0.74||mJ| |trr|Reverse recoverytime|IF= 25 A, VR= 600 V,<br>VGE= ±15 V,<br>diF/dt = 1274 A/μs,<br>TJ= 150 °C|-|378||ns| |Qrr|Reverse recoverycharge||-|4.43||µC| |Irrm|Reverse recoverycurrent||-|41||A| |Erec|Reverse recoveryenergy||-|2.33||mJ| |RTHj-c|Thermal resistance<br>junction to case|Each diode|-|1.05|1.16|°C/W| |RTHc-h|Thermal resistance case<br>to heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|0.85||°C/W| DocID031093 Rev 1 5/19 **A2C25S12M3** **Electrical ratings** ## **1.2 Brake stage** Limiting values at Tj= 25 °C, unless otherwise specified. ## **1.2.1 IGBT** **Table 6: Absolute maximum ratings of the IGBT, brake stage** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCES|Collector-emitter voltage (VGE= 0)|1200|V| |IC|Continuous collector current (Tc= 100 °C)|25|A| |ICP_(1)_|Pulsed collector current|50|A| |VGE|Gate-emitter voltage|±20|V| |PTOT|Totalpower dissipation|197|W| |TJMAX|Maximumjunction temperature|175|°C| |TJop|Operative temperature range under switchingconditions|-40 to 150|°C| ## **Notes:** (1)Pulse width limited by maximum junction temperature. 6/19 DocID031093 Rev 1 **A2C25S12M3** **Electrical ratings** **Table 7: Electrical characteristics of the IGBT, brake stage** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)CES|Collector-emitter<br>breakdown voltage|IC= 1 mA, VGE= 0 V|1200|||V| |VCE(sat)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 25 A||1.95||V| |||VGE= 15 V, IC= 25 A,<br>TJ= 150 ˚C||2.3||| |VGE(th)|Gate threshold<br>voltage|VCE= VGE, IC= 1 mA|5|6|7|V| |ICES|Collector cut-off<br>current|VGE= 0 V, VCE= 1200 V|||100|µA| |IGES|Gate-emitter leakage<br>current|VCE= 0 V, VGE= ±20 V|||± 500|nA| |Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V||1550||pF| |Coes|Output capacitance|||130||pF| |Cres|Reverse transfer<br>capacitance|||65||pF| |Qg|Total gate charge|VCC= 960 V, IC= 25 A,<br>VGE= ±15 V||80||nC| |td(on)|Turn-on delaytime|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>di/dt = 1290 A/µs||109||ns| |tr|Current rise time|||15.3||ns| |Eon_(1)_|Turn-on switching<br>energy|||0.97||mJ| |td(off)|Turn-off delaytime|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>dv/dt = 9600 V/µs||109||ns| |tf|Current fall time|||132||ns| |Eoff_(2)_|Turn-off switching<br>energy|||1.36||mJ| |td(on)|Turn-on delaytime|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>di/dt = 1274 A/µs, TJ= 150 °C||109||ns| |tr|Current rise time|||16.2||ns| |Eon|Turn-on switching<br>energy|||1.49||mJ| |td(off)|Turn-off delaytime|VCC= 600 V, IC= 25 A,<br>RG= 15 Ω, VGE= ±15 V,<br>dv/dt = 8200 V/µs, TJ= 150 °C||122||ns| |tf|Current fall time|||216||ns| |Eoff|Turn-off switching<br>energy|||1.85||mJ| |tSC|Short-circuit<br>withstand time|VCC≤ 600 V, VGE≤ 15 V,<br>TJstart≤ 150 °C|10|||µs| |RTHj-c|Thermal resistance<br>junction to case|Each IGBT||0.69|0.76|°C/W| |RTHc-h|Thermal resistance<br>case to heatsink|Each IGBT,<br>λgrease= 1 W/(m·°C)||0.79||°C/W| ## **Notes:** (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. DocID031093 Rev 1 7/19 **A2C25S12M3** **Electrical ratings** ## **1.2.2 Diode** **Table 8: Absolute maximum ratings of the diode, brake stage** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VRRM|Repetitivepeak reverse voltage|1200|V| |IF|Continuous forward current at (TC= 100 °C)|25|A| |IFP_(1)_|Pulsed forward current|50|A| |TJMAX|Maximumjunction temperature|175|°C| |TJop|Operative temperature range under switchingconditions|-40 to 150|°C| ## **Notes:** (1)Pulse width limited by maximum junction temperature. **Table 9: Electrical characteristics of the diode, brake stage** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VF|Forward voltage|IF= 25 A|-|2.95||V| |||IF= 25 A, TJ= 150 ˚C|-|2.3||| |trr|Reverse recovery<br>time|IF= 25 A, VR= 600 V, VGE= ±15 V,<br>di/dt = 1290 A/μs|-|190||ns| |Qrr|Reverse recovery<br>charge||-|1.53||µC| |Irrm|Reverse recovery<br>current||-|29||A| |Erec|Reverse recovery<br>energy||-|0.74||mJ| |trr|Reverse recovery<br>time|IF= 25 A, VR= 600 V, VGE= ±15 V,<br>di/dt = 1274 A/μs, TJ= 150 °C|-|378||ns| |Qrr|Reverse recovery<br>charge||-|4.43||µC| |Irrm|Reverse recovery<br>current||-|41||A| |Erec|Reverse recovery<br>energy||-|2.33||mJ| |RTHj-c|Thermal resistance<br>junction to case|Each diode|-|1.05|1.16|°C/W| |RTHc-h|Thermal resistance<br>case to heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|0.85||°C/W| 8/19 DocID031093 Rev 1 **A2C25S12M3** **Electrical ratings** ## **1.3 Converter stage** Limiting values at Tj= 25 °C, unless otherwise specified. **Table 10: Absolute maximum ratings of the bridge rectifiers** |**Symbol**|**Description**|**Value**|**Unit**| |---|---|---|---| |VRRM|Repetitivepeak reverse voltage|1600|V| |IF|RMS forward current|50|A| |IFSM|Forward surge current tp= 10 ms, TC= 25 °C|450|A| ||Forward surge current tp= 10 ms, TC= 150 °C|365|| |I2t|tp= 10 ms, TC= 25 °C|1012|A2s| ||tp= 10 ms, TC= 150 °C|666|| |TJMAX|Maximumjunction temperature|175|°C| |TJop|Operative temperature range under switching conditions|-40 to 150|°C| **Table 11: Electrical characteristics of the bridge rectifiers** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VF|Forward voltage|IF= 25 A|-|1.0|1.4|V| |||IF= 25 A, TJ= 150 ˚C|-|0.9||| |IR|Reverse current|TJ= 150 ˚C, VR= 1600 V|-|1||mA| |RTHj-c|Thermal resistance junction<br>to case|Each diode|-|1.00|1.10|°C/W| |RTHc-h|Thermal resistance case to<br>heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|0.95||°C/W| ## **1.4 NTC** **Table 12: NTC temperature sensor, considered as stand-alone** |**Symbol**|**Parameter**|**Test condition**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |R25|Resistance|T = 25 °C||5||kΩ| |R100|Resistance|T = 100 °C||493||Ω| |ΔR/R|Deviation of R100||-5||+5|%| |B25/50|B-constant|||3375||K| |B25/80|B-constant|||3411||K| |T|Operating temperature<br>range||-40||150|°C| DocID031093 Rev 1 9/19 **==> picture [474 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Electrical ratings A2C25S12M3<br>Figure 2: NTC resistance vs. temperature Figure 3: NTC resistance vs. temperature, zoom<br>**----- End of picture text -----**<br> ## **1.5 Package** **Table 13: ACEPACK™ 2 package** |**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---| |Visol|Isolation voltage (AC voltage, t = 60 s)|||2500|V| |Md|Screw mountingtorque|40||80|Nm| |Tstg|Storage temperature|-40||125|°C| |CTI|Comparative trackingindex|200|||| |Ls|Strayinductance module P1 - EW loop||33.5||nH| |Rs|Module lead resistance, terminal to chip||3.6||mΩ| 10/19 DocID031093 Rev 1 **A2C25S12M3** **Electrical characteristics** curves ## **2 Electrical characteristics curves** **Figure 4: IGBT output characteristics (VGE = 15 V) Figure 5: IGBT output characteristics (TJ = 150 °C)** **==> picture [167 x 153] intentionally omitted <==** **==> picture [167 x 153] intentionally omitted <==** **Figure 6: IGBT output characteristics (VCE = 15 V)** **==> picture [168 x 153] intentionally omitted <==** **Figure 7: Switching energy vs gate resistance** **==> picture [168 x 152] intentionally omitted <==** **==> picture [457 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 8: Switching energy vs collector current Figure 9: IGBT reverse biased safe operating area<br>(RBSOA)<br>**----- End of picture text -----**<br> DocID031093 Rev 1 11/19 **A2C25S12M3** ## **Electrical characteristics** curves **==> picture [439 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 10: Diode forward characteristics Figure 11: Diode reverse recovery energy vs diode<br>current slope<br>**----- End of picture text -----**<br> **==> picture [466 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 12: Diode reverse recovery energy vs forward Figure 13: Diode reverse recovery energy vs gate<br>current resistance<br>**----- End of picture text -----**<br> **Figure 14: Converter diode forward characteristics** **==> picture [163 x 151] intentionally omitted <==** **Figure 15: IGBT thermal impedance** **==> picture [179 x 154] intentionally omitted <==** 12/19 DocID031093 Rev 1 **A2C25S12M3** **Electrical characteristics** curves **Figure 16: Inverter diode thermal impedance** **==> picture [208 x 153] intentionally omitted <==** DocID031093 Rev 1 13/19 **A2C25S12M3** **Test circuits** ## **3 Test circuits** **==> picture [401 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 17: Test circuit for inductive load Figure 18: Gate charge test circuit<br>switching<br>A A<br>C<br>G L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br> **Figure 19: Switching waveform** **Figure 20: Diode reverse recovery waveform** **==> picture [144 x 71] intentionally omitted <==** 14/19 DocID031093 Rev 1 **A2C25S12M3** **Topology and** pin description ## **4 Topology and pin description** **Figure 21: Electrical topology and pin description** **==> picture [406 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> P P1<br>G1 G3 G5<br>B<br>T1<br>U<br>L1<br>V<br>L2<br>W<br>GB<br>L3<br>G2 G4 G6<br>T2<br>N NB EU EV EW<br>**----- End of picture text -----**<br> **Figure 22: Package top view with CIB pinout** **==> picture [406 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> W W G3 V V G1 U U L3 L3<br>G5<br>L2<br>P1 P1<br>L2<br>T2<br>L1<br>L1<br>T1 B P P<br>EW EW G6 EV EV G4 EU EU G2 NB GB N N<br>GADG041020170942S A<br>**----- End of picture text -----**<br> DocID031093 Rev 1 15/19 **A2C25S12M3** **Package information** ## **5 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 16/19 DocID031093 Rev 1 **A2C25S12M3 Package information** **==> picture [404 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 5.1 ACEPACK™ 2 CIB solder pins package information<br>**----- End of picture text -----**<br> **==> picture [353 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 23: ACEPACK™ 2 CIB solder pins package outline (dimensions are in mm)<br>**----- End of picture text -----**<br> **==> picture [361 x 452] intentionally omitted <==** **----- Start of picture text -----**<br> 32.00<br>28.80<br>25.60 W G5W G 3 V V G1 U U L3 L3<br>22.40 g_ le T2 eo e8e c P1 ep P1 L2L2 oe | 4See “XS<br>L1<br>19.20 T1 B L1 P P<br>16.00 i, i EW “ EW G6 E V EV G4 —s E U EU G2 NB GB N N NN > S E GY<br>12.809.60 /// e Vj (6 2<br>0.00 _/<br>rrr laa A><br>aN<br>(a e ee<br>Ali a P EE STE<br>ge<br>= Se u a<br>Le<br>—} 3.2 BSC □0.64±0.03 | imL2<br>, El<br>Detail A<br>r o TF Tea_ I| 3.5 REF x45°<br>Ze<br> 56.7±0.3<br> 51±0.15<br> 22.7±0.3<br> 1.3±0.2<br> 16.4±0.2<br>8.5<br>@O Q0O @OOG QO OGO8 H00 8® -<br>@ 0600000000000©000000000000 80 0000 —=<br>Q8O0000GO 9O OO G OO =<br>@ 00900( 7}O 900000_QO O@0 000000 == |<br>8 00 7 000 9 00 8 0 00 a<br>© 00000000 9 0000 e0 =<br>©000000000000000<br> 2.5±0.2<br>He<br>te 4.5±0.1 L<br> 52.7 REF<br>- - TOP_VI E W<br>8569722_ACEPACK2_CIB_solderable_pins<br>0.00 16.00 28.80 44.80<br> 15.5±0.5<br>2.3 REF<br> 62.8±0.5 42.5±0.2<br>3.20 6.40 9.60 12.80 19.20 22.40 25.60 32.00 35.20 38.40 41.60 48.00<br> 12±0.35<br>A A<br> 48±0.3 37 REF 53±0.1<br> 3.2 BSC<br>**----- End of picture text -----**<br> - The lead size includes the thickness of the lead plating material. - Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DocID031093 Rev 1 17/19 **A2C25S12M3** **Revision history** ## **6 Revision history** **Table 14: Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |02-Oct-2017|1|Initial release.| 18/19 DocID031093 Rev 1 **A2C25S12M3** ## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. - © 2017 STMicroelectronics – All rights reserved DocID031093 Rev 1 19/19
Updated at April 16, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
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