![A1C15S12M3-F — IGBT Module, Three Phase CIB [Converter + Inverter + Brake], 15 A, 1.95 V, 142.8 W, 150 °C](/media/4/E/E/40ABAA2D5294BEE4.webp)
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A1C15S12M3-F
IGBT Module, Three Phase CIB [Converter + Inverter + Brake], 15 A, 1.95 V, 142.8 W, 150 °C
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: STMICROELECTRONICS
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:142.8W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist
- SVHC: No SVHC (17-Dec-2015)
- Product Range: ACEPACK 1 M
- IGBT Technology: Trench Field Stop
- IGBT Termination: Press Fit
- Power Dissipation: 142.8W
- IGBT Configuration: Three Phase CIB [Converter + Inverter + Brake]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 15A
- Power Dissipation Pd: 142.8W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 20.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **A1C15S12M3-F**
ACEPACK™ 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet - production data
## **Features**
- ACEPACK™ 1 power module DBC Cu Al2O3 Cu
- Press fit contact pins
- Converter inverter brake topology
- 1600 V, very low drop rectifiers for converter
-
-
- 1200 V, 15 A IGBTs and diodes
- VCE(sat): 1.95 V @ IC = 15 A
- Soft and fast recovery diode
- Integrated NTC
**Figure 1: Internal electrical schematic**
## **Applications**
- Inverters
- Motor drives
## **Description**
This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate fieldstop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Leads type**|
|---|---|---|---|
|A1C15S12M3-F|A1C15S12M3-F|ACEPACK™ 1|Press fit contactpins|
_www.st.com_
October 2017
DocID027679 Rev 5
1/19
This is information on a product in full production.
**Contents**
**A1C15S12M3-F**
## **Contents**
|**1**|**Electrical ratings ............................................................................. 3**|
|---|---|
||1.1<br>Inverter stage .................................................................................... 3|
||1.1.1<br>IGBTs.................................................................................................. 3|
||1.1.2<br>Diode .................................................................................................. 4|
||1.2<br>Brake stage ....................................................................................... 5|
||1.2.1<br>IGBT ................................................................................................... 5|
||1.2.2<br>Diode .................................................................................................. 7|
||1.3<br>Converter stage ................................................................................. 7|
||1.4<br>NTC ................................................................................................... 8|
||1.5<br>Package ............................................................................................ 9|
|**2**|**Electrical characteristics curves .................................................. 10**|
|**3**|**Test circuits ................................................................................... 13**|
|**4**|**Topology and pin description ...................................................... 14**|
|**5**|**Package information ..................................................................... 15**|
||5.1<br>ACEPACK™ 1 CIB press fit pins package information ................... 16|
|**6**|**Revision history ............................................................................ 18**|
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**A1C15S12M3-F**
**Electrical ratings**
## **1 Electrical ratings**
## **1.1 Inverter stage**
Limiting values at Tj = 25 °C, unless otherwise specified.
## **1.1.1 IGBTs**
**Table 2: Absolute maximum ratings of the IGBTs, inverter stage**
|**Symbol**|**Description**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|1200|V|
|IC|Continuous collector current at Tc= 100 °C|15|A|
|ICP_(1)_|Pulsed collector current (tP= 1 ms)|30|A|
|VGE|Gate-emitter voltage|±20|V|
|PTOT|Totalpower dissipation IGBT (TJMAX= 175 °C)|142.8|W|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
**Table 3: Electrical characteristics of the IGBTs, inverter stage**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter<br>breakdown voltage|IC= 1 mA, VGE= 0 V|1200|||V|
|VCE(sat)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 15 A||1.95|2.45|V|
|||VGE= 15 V, IC= 15 A,<br>TJ= 150 ˚C||2.3||V|
|VGE(th)|Gate threshold<br>voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off<br>current|VGE= 0 V, VCE= 1200 V|||100|μA|
|IGES|Gate-emitter leakage<br>current|VCE= 0 V, VGE= ± 20 V|||±500|nA|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V||985||pF|
|Coes|Output capacitance|||118||pF|
|Cres|Reverse transfer<br>capacitance|||40||pF|
|Qg|Total gate charge|VCC= 960 V, IC= 15 A,<br>VGE= ±15 V||71||nC|
|td(on)|Turn-on delay time|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω, VGE= ±15 V,<br>di/dt = 820 A/µs||120||ns|
|tr|Current rise time|||14.5||ns|
|Eon_(1)_|Turn-on switching<br>energy|||0.59||mJ|
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**A1C15S12M3-F**
**Electrical ratings**
||**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
||td(off)|Turn-off delay time|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω, VGE= ±15 V,<br>dv/dt = 8200 V/µs;||115||ns|
||tf|Current fall time|||84||ns|
||Eoff_(2)_|Turn-off switching<br>energy|||0.83||mJ|
||td(on)|Turn-on delay time|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω, VGE= ±15 V,<br>di/dt = 690 A/µs, TJ= 150 °C||122||ns|
||tr|Current rise time|||17||ns|
||Eon_(1)_|Turn-on switching<br>energy|||1.08||mJ|
||td(off)|Turn-off delay time|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω, VGE= ±15 V,<br>dv/dt = 7000 V/µs,<br>TJ= 150 °C||122||ns|
||tf|Current fall time|||146||ns|
||Eoff_(2)_|Turn-off switching<br>energy|||1.06||mJ|
||tSC|Short-circuit<br>withstand time|VCC≤ 600 V, VGE≤ 15 V,<br>Tjstart≤ 150 °C|10|||µs|
||RTHj-c|Thermal resistance<br>junction to case|each IGBT||0.95|1.05|°C/W|
||RTHc-h|Thermal resistance<br>case to heatsink|each IGBT<br>λgrease= 1 W/(m·°C)||0.90||°C/W|
## **Notes:**
(1) Including the reverse recovery of the diode.
(2)Including also the tail of the collector current.
## **1.1.2 Diode**
Limiting values at Tj = 25 °C, unless otherwise specified.
**Table 4: Absolute maximum ratings of the diode, inverter stage**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage|1200|V|
|IF|Continuous forward current at (TC= 100 °C)|15|A|
|IFP_(1)_|Pulsed forward current|30|A|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
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**A1C15S12M3-F**
**Electrical ratings**
**Table 5: Electrical characteristics of the diode, inverter stage**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 15 A|-|3.0|3.8|V|
|||IF= 15 A, TJ= 150 ˚C|-|2.1|||
|trr|Reverse recoverytime|IF= 15 A, VR= 600 V,<br>VGE= ±15 V,<br>diF/dt = 820 A/μs|-|190||ns|
|Qrr|Reverse recoverycharge||-|1.45||µC|
|Irrm|Reverse recoverycurrent||-|23||A|
|Erec|Reverse recoveryenergy||-|0.55||mJ|
|trr|Reverse recoverytime|IF= 15 A, VR= 600 V,<br>VGE= ±15 V,<br>diF/dt = 690 A/μs, TJ= 150 °C|-|400||ns|
|Qrr|Reverse recoverycharge||-|2.75||µC|
|Irrm|Reverse recoverycurrent||-|25||A|
|Erec|Reverse recoveryenergy||-|1.2||mJ|
|RTHj-c|Thermal resistance<br>junction to case|Each diode|-|1.60|1.75|°C/W|
|RTHc-h|Thermal resistance case<br>to heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|1.15||°C/W|
## **1.2 Brake stage**
Limiting values at Tj= 25 °C, unless otherwise specified.
## **1.2.1**
## **IGBT**
**Table 6: Absolute maximum ratings of the IGBT, brake stage**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|1200|V|
|IC|Continuous collector current (Tc= 100 °C)|15|A|
|ICP_(1)_|Pulsed collector current|30|A|
|VGE|Gate-emitter voltage|±20|V|
|PTOT|Totalpower dissipation|142.8|W|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
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**A1C15S12M3-F**
**Electrical ratings**
**Table 7: Electrical characteristics of the IGBT, brake stage**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter<br>breakdown voltage|IC= 1 mA, VGE= 0 V|1200|||V|
|VCE(sat)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 15 A||1.95|2.45|V|
|||VGE= 15 V, IC= 15 A,<br>TJ= 150 ˚C||2.3|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 1200 V|||100|µA|
|IGES|Gate-emitter leakage<br>current|VCE= 0 V, VGE= ±20 V|||±500|nA|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V||985||pF|
|Coes|Output capacitance|||118||pF|
|Cres|Reverse transfer<br>capacitance|||40||pF|
|Qg|Total gate charge|VCC= 960 V, IC= 15 A,<br>VGE= ±15 V||71||nC|
|td(on)|Turn-on delaytime|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω, VGE= ±15 V,<br>di/dt = 820 A/µs||120||ns|
|tr|Current rise time|||14.5||ns|
|Eon_(1)_|Turn-on switchingenergy|||0.59||mJ|
|td(off)|Turn-off delaytime|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω,<br>VGE= ±15 V,<br>dv/dt = 8200 V/µs;||115||ns|
|tf|Current fall time|||84||ns|
|Eoff_(2)_|Turn-off switching energy|||0.83||mJ|
|td(on)|Turn-on delaytime|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω, VGE= ±15 V,<br>di/dt = 690 A/µs, TJ= 150 °C||122||ns|
|tr|Current rise time|||17||ns|
|Eon|Turn-on switchingenergy|||1.08||mJ|
|td(off)|Turn-off delaytime|VCC= 600 V, IC= 15 A,<br>RG= 22 Ω, VGE= ±15 V,<br>dv/dt = 7000 V/µs,<br>TJ= 150 °C||122||ns|
|tf|Current fall time|||146||ns|
|Eoff|Turn-off switching energy|||1.06||mJ|
|tSC|Short-circuit withstand<br>time|VCC≤ 600 V, VGE≤ 15 V,<br>TJstart≤ 150 °C|10|||µs|
|RTHj-c|Thermal resistance<br>junction to case|Each IGBT||0.95|1.05|°C/W|
|RTHc-h|Thermal resistance case<br>to heatsink|Each IGBT,<br>λgrease= 1 W/(m·°C)||0.90||°C/W|
## **Notes:**
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
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**A1C15S12M3-F**
**Electrical ratings**
## **1.2.2 Diode**
**Table 8: Absolute maximum ratings of the diode, brake stage**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage|1200|V|
|IF|Continuous forward current at (TC= 100 °C)|15|A|
|IFP_(1)_|Pulsed forward current|30|A|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|
**Notes:**
(1)Pulse width limited by maximum junction temperature.
**Table 9: Electrical characteristics of the diode, brake stage**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 15 A|-|3.0|3.8|V|
|||IF= 15 A, TJ= 150 ˚C|-|2.1|||
|trr|Reverse recoverytime|IF= 15 A, VR= 600 V,<br>VGE= ±15 V,<br>di/dt = 820 A/μs|-|190||ns|
|Qrr|Reverse recoverycharge||-|1.45||µC|
|Irrm|Reverse recoverycurrent||-|23||A|
|Erec|Reverse recoveryenergy||-|0.55||mJ|
|trr|Reverse recoverytime|IF= 15 A, VR= 600 V,<br>VGE= ±15 V,<br>di/dt = 690 A/μs, TJ= 150 °C|-|400||ns|
|Qrr|Reverse recoverycharge||-|2.75||µC|
|Irrm|Reverse recoverycurrent||-|25||A|
|Erec|Reverse recoveryenergy||-|1.2||mJ|
|RTHj-c|Thermal resistance junction<br>to case|Each diode|-|1.60|1.75|°C/W|
|RTHc-h|Thermal resistance case to<br>heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|1.15||°C/W|
## **1.3 Converter stage**
Limiting values at Tj = 25 °C, unless otherwise specified.
**Table 10: Absolute maximum ratings of the bridge rectifiers**
|**Symbol**|**Description**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage|1600|V|
|IF|RMS forward current|30|A|
|IFSM|Forward surge current tp= 10 ms, TC= 25 °C|315|A|
||Forward surge current tp= 10 ms, TC= 150 °C|250||
|I2t|tp= 10 ms, TC= 25 °C|496|A2s|
||tp= 10 ms, TC= 150 °C|312||
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|
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**A1C15S12M3-F**
**Electrical ratings**
**Table 11: Electrical characteristics of the bridge rectifiers**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|<br>**Typ.**|<br>**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 15 A|-|1.0|1.4|V|
|||IF= 15 A, TJ= 150 ˚C|-|0.9|||
|IR|Reverse current|TJ= 150 ˚C, VR= 1600 V|-|1||mA|
|RTHj-c|Thermal resistance junction to<br>case|Each diode|-|1.20|1.35|°C/W|
|RTHc-h|Thermal resistance case to<br>heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|1.15||°C/W|
## **1.4 NTC**
**Table 12: NTC temperature sensor, considered as stand-alone**
|**Symbol**|**Parameter**|**Test condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|Resistance|T = 25°C||5||kΩ|
|R100|Resistance|T = 100°C||493||Ω|
|ΔR/R|Deviation of R100||-5||+5|%|
|B25/50|B-constant|||3375||K|
|B25/80|B-constant|||3411||K|
|T|Operatingtemperature range||-40||150|°C|
**Figure 2: NTC resistance vs. temperature**
**==> picture [175 x 162] intentionally omitted <==**
**Figure 3: NTC resistance vs. temperature, zoom**
**==> picture [185 x 167] intentionally omitted <==**
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**Electrical ratings**
## **1.5 Package**
**Table 13: ACEPACK™ 1 package**
|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|Visol|Isolation voltage (AC voltage, t = 60 s)|||2500|V|
|Md|Screw mountingtorque|40||80|Nm|
|Tstg|Storage temperature|-40||125|°C|
|CTI|Comparative trackingindex|200||||
|Ls|Strayinductance module P1 - EW loop||28.7||nH|
|Rs|Module lead resistance, terminal to chip||3.9||mΩ|
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**A1C15S12M3-F**
**Electrical characteristics** curves
## **2 Electrical characteristics curves**
**Figure 4: IGBT output characteristics (VGE = 15 V) Figure 5: IGBT output characteristics (TJ = 150 °C)**
**==> picture [165 x 151] intentionally omitted <==**
**==> picture [165 x 151] intentionally omitted <==**
**Figure 6: IGBT transfer characteristics (VCE = 15 V)**
**==> picture [165 x 151] intentionally omitted <==**
**Figure 7: Switching energy vs. gate resistance**
**==> picture [167 x 152] intentionally omitted <==**
**==> picture [457 x 187] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 9: IGBT reverse biased safe operating area<br>Figure 8: Switching energy vs. collector current<br>(RBSOA)<br>**----- End of picture text -----**<br>
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**==> picture [474 x 406] intentionally omitted <==**
**----- Start of picture text -----**<br>
A1C15S12M3-F Electrical characteristics curves<br>Figure 11: Diode reverse recovery energy vs. diode<br>Figure 10: Diode forward characteristics<br>current slope<br>Figure 12: Diode reverse recovery energy vs. Figure 13: Diode reverse recovery energy vs. gate<br>forward current resistance<br>**----- End of picture text -----**<br>
**Figure 14: Converter diode forward characteristics**
**==> picture [161 x 150] intentionally omitted <==**
**Figure 15: IGBT thermal impedance**
**==> picture [179 x 152] intentionally omitted <==**
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**A1C15S12M3-F**
**Electrical characteristics** curves
**==> picture [193 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 16: Inverter diode thermal impedance<br>**----- End of picture text -----**<br>
**==> picture [179 x 151] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**==> picture [399 x 176] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 17: Test circuit for inductive load Figure 18: Gate charge test circuit<br>switching<br>A A<br>C<br>G L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>
**Figure 19: Switching waveform**
**Figure 20: Diode reverse recovery waveform**
**==> picture [146 x 71] intentionally omitted <==**
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**Topology and** pin description
## **4 Topology and pin description**
**Figure 21: Electrical topology and pin description**
**==> picture [406 x 209] intentionally omitted <==**
**----- Start of picture text -----**<br>
P P1<br>G1 G3 G5<br>B<br>T1<br>U<br>L1<br>V<br>L2<br>W<br>GB<br>L3<br>G2 G4 G6<br>T2<br>N NB EU EV EW<br>**----- End of picture text -----**<br>
**Figure 22: Package top view with CIB pinout**
**==> picture [406 x 328] intentionally omitted <==**
**----- Start of picture text -----**<br>
L1 B<br>L2 L3 P NB<br>G5 P1 GB<br>W T1 N<br>T2 G6<br>G3 EW<br>V G4<br>EV<br>G1 G2<br>U EU<br>GIPD270320151420FSR<br>**----- End of picture text -----**<br>
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**Package information**
## **5 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**Package information**
**5.1 ACEPACK™ 1 CIB press fit pins package information**
**==> picture [236 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 23: ACEPACK™ 1 CIB press fit package outline<br>**----- End of picture text -----**<br>
**==> picture [464 x 582] intentionally omitted <==**
**----- Start of picture text -----**<br>
32.00<br>25.60<br>L1 B 22.40<br>L2 L3 P NB 19.20<br>G5 P1 GB<br>W T1 N 16.00<br>T2 G6<br>G3 EW 12.80<br>V G4<br>EV 9.60<br>G1 G2<br>U EU 6.40<br>3.20<br>0.00<br>S ID E V IE W<br>3.2 BSC<br>c 0.2<br>33.8±0.3<br>Section B-B 28.1±0.2<br>19.4±0.2<br>8.5<br>16.4±0.2<br>1.3±0.2<br>B<br>B<br>Detail A<br>2.5±0.2<br>A<br>A<br>3.5 REF x45°<br>4.5±0.1<br>TO P VIE W<br>8569715_2<br> The lead size includes the thickness of the lead plating material..<br> Dimensions do not include mold protrusion.<br> Package dimensions do not include any eventual metal burrs.<br>0<br>6<br>5.<br>2 12.80<br>REF<br>36.8 62.8±0.5<br>19.20 16.00 6.40 0.00 16.4±0.50 12±0.35<br>REF<br>2.3<br>C<br>BS<br>2<br>3.<br>48±0.3 41±0.2 42.5±0.2 53±0.1<br>**----- End of picture text -----**<br>
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**Package information**
**Figure 24: ACEPACK™ 1 CIB press fit recommended PCB holes layout**
**==> picture [240 x 516] intentionally omitted <==**
**----- Start of picture text -----**<br>
µ<br>\ | Finished<br>¥ s 1 Hear y J<br>Galvanic surfaéé fd Drilled hole<br>2<br>=<br>oO<br>DetailaAn oO_<br>Zz ZZ 1 VLLLLL Av ZZ LL.<br>26.50<br>21.25<br>/ ae I. / / 16.00<br>9.60<br>[ 7 L 1 |e e—— B | I /, 6.40<br>DA f L2 L3 y P1P NB ALY 3.20<br>G5 GB<br>W T1 N<br>0.00<br>T2 G6<br>G3 EW 3.20<br>V G4<br>EV 6.40<br>G1 G2<br>U EU 9.60<br>12.80<br>| ‘ { - \ ° | \ \a<br>| YL + \\— 16.00<br>21.25<br> \<br>26.50<br>R4,50<br>R1,40<br>14.05 12.80 6.40 3.20 0.00 6.40 12.80 14.05<br>**----- End of picture text -----**<br>
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**A1C15S12M3-F**
**Revision history**
## **6 Revision history**
**Table 14: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|01-Feb-2016|1|Initial release.|
|03-Feb-2016|2|Updated_Table 3: "Electrical characteristics of the IGBTs, inverter_<br>_stage"_.<br>Minor text changes.|
|28-Jul-2017|3|Product status changed from preliminary to production data.<br>Added_Electrical characteristics curves_.<br>Minor text changes.|
|30-Aug-2017|4|Updated_Table 3: "Electrical characteristics of the IGBTs, inverter_<br>_stage", Table 5: "Electrical characteristics of the diode, inverter_<br>_stage", Table 7: "Electrical characteristics of the IGBT, brake stage",_<br>_Table 5: "Electrical characteristics of the diode, inverter stage", Table_<br>_11: "Electrical characteristics of the bridge rectifiers", Section 2:_<br>_"Electrical characteristics curves"_.<br>_Minor text changes._|
|05-Oct-2017|5|Updated_Table 13: "ACEPACK™ 1 package"_,_Figure 15: "IGBT_<br>_thermal impedance"_,_Figure 16: "Inverter diode thermal impedance"_<br>and_Section 5.1: "ACEPACK™ 1 CIB press fit pins package_<br>_information"_.<br>Minor text changes.|
18/19
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**A1C15S12M3-F**
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DocID027679 Rev 5
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Updated at April 16, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
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