# Schottky Rectifier, 45 V, 8 A, Single, DO-201AD, 2 Pins, 550 mV ![Product image](https://novapart.co/image/farnell:2101171/) **URL**: https://novapart.co/products/80SQ045NRLG/schottky-rectifier-45-v-8-a-single-do-201ad-2-pins **SKU**: 80SQ045NRLG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.3980 **Stock**: 1000+ **Lead Time**: 90 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):8A; Diode Configuration:Single; Diode Case Style:DO-201AD; No. of Pins:2Pins; Forward Voltage VF Max:550mV; Forward Sur ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | 80SQ0 | | Qualification | - | | Diode Mounting | Through Hole | | Diode Case Style | DO-201AD | | Diode Configuration | Single | | Forward Voltage Max | 550mV | | Forward Surge Current | 140A | | Average Forward Current | 8A | | Operating Temperature Max | 125°C | | Repetitive Peak Reverse Voltage | 45V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101171/) ## 80SQ045N ## **Preferred Device** ## Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. ## **Features** - High Current Capability - Low Stored Charge, Majority Carrier Conduction ## [@] **http://onsemi.com** **SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES** - Low Power Loss/High Efficiency - Highly Stable Oxide Passivated Junction - Guard−Ring for Stress Protection - Low Forward Voltage - High Surge Capacity - These are Pb−Free Devices* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.1 Gram (Approximately) **AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1** f - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: **MARKING DIAGRAM** 220°C Max. for 10 Seconds, 1/16″ from Case • Polarity: Cathode indicated by Polarity Band • ESD Protection: Human Body Model > 4000 V (Class 3) 80SQ Machine Model > 400 V (Class C) 045N YYWW **MAXIMUM RATINGS Rating Symbol Max Unit** Peak Repetitive Reverse Voltage VRRM 45 V YY = Year Working Peak Reverse Voltage VRWM WW = Work Week DC Blocking Voltage VR = Pb−Free Package Average Rectified Forward Current TL = 75 ° C IO 8.0 A (Note: Microdot may be in either location) (PsiJL = 12 ° C/W, P.C. Board Mounting, Note 2) **ORDERING INFORMATION** Non−Repetitive Peak Surge Current IFSM 140 A (Surge Applied at Rated Load Conditions **Device Package Shipping**[†] Halfwave, Single Phase, 60 Hz) Operating and Storage Junction TemperaTJ, Tstg −65 to +125 ° C 80SQ045N Axial Lead* 500 Units/Box ture Range (Reverse Voltage Applied) 80SQ045NG Axial Lead* 500 Units/Box Voltage Rate of Change (Rated VR) dv/dt 10 V/ns 80SQ045NRL Axial Lead* 1500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum 80SQ045NRLG Axial Lead* 1500/Tape & Reel Ratings are stress ratings only. Functional operation above the Recommended ~~Se~~ Operating Conditions is not implied. Extended exposure to stresses above the †For information on tape and reel specifications, Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *This package is inherently Pb−Free. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2006 **May, 2006 − Rev. 3** **80SQ045N/D** **80SQ045N** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**0.9 in x 0.9 in**
**Copper Pad Size**|**6.75 in** **x 6.75 in**
**Copper Pad Size**|**Unit**| |Thermal Resistance, Junction−to−Lead
(See Note 2 − Mounting Data)
Thermal Resistance, Junction−to−Ambient (See Note 2 − Mounting Data)|R�JL
R�JA|13
50|12
40|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TL = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TL= 25°C unless otherwise noted)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)
(iF= 8.0 A, TL= 25°C)|vF|0.55|V| |Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
TL= 25°C
TL= 100°C|iR|1.0
50|mA| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle = 2.0%. **==> picture [491 x 394] intentionally omitted <==** **----- Start of picture text -----**
30 30
10 10
MBR845
100 ° C
1 1
125 ° C 75 ° C 100 ° C
75 ° C
125 ° C
25 ° C 25 ° C
0.1 0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1E−01 10,000
125 ° C
1E−02 100 ° C
1E−03 75 ° C f = 1 MHzTJ = 25 ° C
1000
1E−04
25 ° C
1E−05
1E−06 100
0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
CURRENT (AMPS) CURRENT (AMPS)
, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD
IF IF
C, CAPACITANCE (pF)
, INSTANTANEOUS REVERSE CURRENT (AMPS)
IR
**----- End of picture text -----**
**Figure 3. Typical Reverse Current** **Figure 4. Typical Capacitance** **http://onsemi.com** **2** **80SQ045N** **==> picture [490 x 603] intentionally omitted <==** **----- Start of picture text -----**
75 9
70 8
dc
65 7 R � JL = 12 ° C/W
60 6
SQUARE
55 5
WAVE
50 4
See Note 2
45 3
40 2
35 1
30 0
0 2 4 6 8 10 0 20 40 60 80 100 120 140
R � JA ( ° C/W) TL, LEAD TEMPERATURE ( ° C)
Figure 5. R � JA versus Copper Area Figure 6. Current Derating − Lead
4.5
NOTE 2 — MOUNTING DATA
4
3.5 Mounting Method
SQUARE
3 WAVE TJ = 125 ° C P.C. Board with 6.75 sq. in.copper surface.
2.5
dc
2 ÉÉ
L = 3/8 �
1.5 ÉÉ
1 ÉÉ
0.5 ÉÉ
0 ÉÉ
0 2 4 6 8 10 ÉÉ
IO, AVERAGE FORWARD CURRENT (AMPS) ÉÉ Board Ground Plane
Figure 7. Forward Power Dissipation
ÉÉ
1
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.01
Copper Area = 0.271 sq. in.
0.01
SINGLE PULSE R � JA = 61.8 ° C/W t1 t2
DUTY CYCLE, D = t1/t2
0.001
0.0001 0.001 0.01 0.1 1.0 10 100 1000
t, TIME (sec)
CURRENT (AMPS)
, AVERAGE FORWARD
COPPER AREA (sq in) IF
, AVERAGE POWER
PFO DISSIPATION (WATTS)
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
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**Figure 8. Thermal Response, Junction−to−Ambient** **http://onsemi.com** **3** **80SQ045N** ## **PACKAGE DIMENSIONS** **AXIAL LEAD** CASE 267−05 ISSUE G NOTES: **K A D** 1 2 r ~~e i~~ SIce **B K** ae **==> picture [117 x 94] intentionally omitted <==** **----- Start of picture text -----**
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.287 0.374 7.30 9.50
B 0.189 0.209 4.80 5.30
D 0.047 0.051 1.20 1.30
K 1.000 −−− 25.40 −−−
STYLE 1: ====
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
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