# Bipolar (BJT) Single Transistor, NPN, 50 V, 400 mA, 200 mW, SOT-623, Surface Mount
**URL**: https://novapart.co/products/50C02SS-TL-E/bipolar-bjt-single-transistor-npn-50-v-400-ma-200
**SKU**: 50C02SS-TL-E
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0580
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Power Dissipation | 200mW |
| Dc Current Gain Hfe Min | 300hFE |
| Continuous Collector Current | 400mA |
| Collector Emitter Voltage Max | 50V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2774785RL/)
**Ordering number : EN7519A**
## **50C02SS**
## **Bipolar Transistor 50V, 0.4A, Low VCE(sat) NPN Single SSFP**
http://onsemi.com
## **Applications**
- Low-frequency Amplifer, high-speed switching small motor drive, muting circuit
## **Features**
- Large current capacity
- Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175mΩ[IC=0.5A, IB=50mA]
- Ultrasmall package facilitates miniaturization in end products
- Small ON-resistance (Ron)
## **Specifi cations**
## **Absolute Maximum Ratings** at Ta=25°C
|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Collector-to-Base Voltage|VCBO||60|V|
|Collector-to-Emitter Voltage|VCEO||50|V|
|Emitter-to-Base Voltage|VEBO||5|V|
|Collector Current|IC||400|mA|
|Collector Current(Pulse)|ICP||800|mA|
|Collector Dissipation|PC|Mounted on aglass-epoxyboard (20×30×1.6mm)|200|mW|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
## **Package Dimensions**
unit : mm (typ)
7029A-002
## **Product & Package Information**
- Package : SSFP • JEITA, JEDEC : SC-81
- Minimum Packing Quantity : 8,000 pcs./reel
**==> picture [300 x 186] intentionally omitted <==**
**----- Start of picture text -----**
1.4 50C02SS-TL-E
0.25 0.1
3
0 to 0.02
1 2
0.2 TL
fa 0.45 t
1 2 1 : Base 3
2 : Emitter
3 : Collector
1
3 SSFP
a 4
2
0.3
1.4 0.8
0.3
0.6
0.07
0.07
**----- End of picture text -----**
**==> picture [186 x 65] intentionally omitted <==**
**----- Start of picture text -----**
Packing Type: TL Marking
YN
TL
LOT No. LOT No.
**----- End of picture text -----**
## **Electrical Connection**
Semiconductor Components Industries, LLC, 2013 **August, 2013**
71812 TKIM/52703 TSIM TA-100152 No.7519-1/7
**50C02SS**
## **Electrical Characteristics** at Ta=25°C
|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Collector Cutoff Current|ICBO|VCB=40V, IE=0A|||100|nA|
|Emitter Cutoff Current|IEBO|VEB=4V, IC=0A|||100|nA|
|DC Current Gain|hFE|VCE=2V, IC=10mA|300||800||
|Gain-Bandwidth Product|fT|VCE=10V, IC=50mA||500||MHz|
|Output Capacitance|Cob|VCB=10V, f=1MHz||2.8||pF|
|Collector-to-Emitter Saturation Voltage|VCE(sat)|IC=100mA, IB=10mA||50|100|mV|
|Base-to-Emitter Saturation Voltage|VBE(sat)|IC=100mA, IB=10mA||0.9|1.2|V|
|Collector-to-Base Breakdown Voltage|V(BR)CBO|IC=10μA, IE=0A|60|||V|
|Collector-to-Emitter Breakdown Voltage|V(BR)CEO|IC=1mA, RBE=∞|50|||V|
|Emitter-to-Base Breakdown Voltage|V(BR)EBO|IE=10μA, IC=0A|5|||V|
|Turn-ON Time|ton|See specif ed Test Circuit.||30||ns|
|Storage Time|tstg|||340||ns|
|Fall Time|tf|||55||ns|
## **Switching Time Test Circuit**
**==> picture [162 x 105] intentionally omitted <==**
**----- Start of picture text -----**
IB1
PW=20 μ s OUTPUT
D.C. ≤ 1% IB2
INPUT VR RB RL
50 Ω
+ +
220 μ F 470 μ F
VBE= --5V VCC=25V
**----- End of picture text -----**
IC=20IB1= --20IB2=200mA
## **Ordering Information**
|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|50C02SS-TL-E|SSFP|8,000pcs./reel|Pb Free|
No.7519-2/7
**50C02SS**
**==> picture [483 x 737] intentionally omitted <==**
**----- Start of picture text -----**
IC -- VCE IC -- VBE
500 600
VCE=2V
450
500
400
350
400
300
250 300
200
200
150
100 200μA
100
50
0 IB=0 0
0 100 200 300 400 500 600 700 800 900 1000 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- mV IT05106 Base-to-Emitter Voltage, VBE -- V IT05107
hFE -- IC VCE(sat) -- IC
1000 3
7 VCE=2V IC / IB=10
2
5
3 100
2 7
5
100
7 3
5 2
3
10
2
7
10 5
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05108 Collector Current, IC -- mA IT05411
VCE(sat) -- IC VCE(sat) -- IC
3 1000
IC / IB=20 7 IC / IB=50
2
5
3
100
2
7
100
5
7
5
3
3
2
2
10 10
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05109 Collector Current, IC -- mA IT05110
VBE(sat) -- IC Cob -- VCB
10 10
IC / IB=20 f=1MHz
7
5 7
3
5
2
1.0
3
7
5
2
3
2
0.1 1.0
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC -- mA IT05111 Collector-to-Base Voltage, VCB -- V IT05112
Ta=75°C
Ta= --25°C
1mA
5mA
25°C
3mA
--25°C
25°C
75°C
600μA
2mA
7mA
8mA
10mA
°C
25
°C
Ta=75 °C
--25
°C
25
°C
25
°C
--25
°C
Ta=75
Ta=75--25°C°C
15mA
20mA
°C
Ta=75
30mA
°C
25
°C
--25
Collector Current, IC -- mA Collector Current, IC -- mA
DC Current Gain, hFE
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Output Capacitance, Cob -- pF
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
**----- End of picture text -----**
No.7519-3/7
**50C02SS**
**==> picture [471 x 368] intentionally omitted <==**
**----- Start of picture text -----**
fT -- IC Ron -- IB
1000 100
VCE=10V 7 f=1MHz 1kΩ
5 IN OUT
7 3 1kΩ
2
5 IB
10
7
5
3 3
2
1.0
2 7
5
3
2
100 0.1
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- mA IT05113 Base Current, IB -- mA IT06092
PC -- Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT05114
Mounted on a glass-epoxy board(20
✕
30
✕
1.6mm)
Ω
ON Resistance, Ron --
Gain-Bandwidth Product, fT -- MHz
Collector Dissipation, PC -- mW
**----- End of picture text -----**
No.7519-4/7
**50C02SS**
## **Embossed Taping Specifi cation** 50C02SS-TL-E
No.7519-5/7
**50C02SS**
## **Outline Drawing** 50C02SS-TL-E
**==> picture [254 x 370] intentionally omitted <==**
**----- Start of picture text -----**
Mass (g) Unit
0.0018
* For reference [mm]
**----- End of picture text -----**
## **Land Pattern Example**
**==> picture [215 x 214] intentionally omitted <==**
**----- Start of picture text -----**
Unit: mm
0.5
0.45 0.45
0.45 0.45
0.5
1.2
**----- End of picture text -----**
No.7519-6/7
**50C02SS**
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.7519-7/7
## Links
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- [Supplier page](https://es.farnell.com/en-ES/on-semiconductor/50c02ss-tl-e/transistor-npn-50v-0-4a-sot-623/dp/2774785RL)
---
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