# DUAL GATE MOSFET, N CHANNEL, TO-72-4
**URL**: https://novapart.co/products/3N201/dual-gate-mosfet-n-channel-to-72-4
**SKU**: 3N201
**Manufacturer**: SOLID STATE
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €8.4700
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1.2W |
| Transistor Case Style | TO-72 |
| Drain Source Voltage Vds | 25VDC |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 50mA |
| Drain Source Voltage Vds N Channel | 25V |
| Continuous Drain Current Id N Channel | 50mA |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2857876/)
S&S 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003
## www.solidstateinc.com
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3N202
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RatingDrain-SourceMAXIMUM RATINGS | Symbot_[ Vale [Uni
Voltage [ vos [| 2 | Vdc |
Drain-Gate- Voltage yoGi 30 Vde
Vorin Goren’ —SSCSCS~S DG2|||30
Gate Current IG1 +10 mAdc
IG2 +10
Total Device Dissipation @ Ta = 25°C 360 mW
Derate above 25°C 2.4 mWwrc
Total Device Dissipation @ Tc = 25°C Watt
Derate above 25°C mw?rc
Lead Temperature | Tt |
Junction Temperature Range —65 to +175
Storage Channel Temperature Range
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|MAXIMUMRATINGS|MAXIMUMRATINGS|MAXIMUMRATINGS|MAXIMUMRATINGS|MAXIMUMRATINGS|MAXIMUMRATINGS|MAXIMUMRATINGS|MAXIMUMRATINGS|MAXIMUMRATINGS||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|MAXIMUM RATINGS
RatingDrain-SourceMAXIMUM | Symbot_[Symbot_[ Vale [Uni
Drain-SourceMAXIMUMVoltage
[ vos [| 2 | Vdc |
-
Vde
Drain-Gate- Voltage
yoGi
30
DG2|||30
30
VorinGoren’ —SSCSCS~S |||30
Gate Current
IG1
+10
mAdc|||||||||:|10-72(TO-206AF)
Gate 1
3
;
Gate|||||
1 Drain||
||||IG2||+10||||||||||Source|
|Total Device Dissipation @@ Ta = 25°C
Derate above 25°C|||||360
2.4||mW
mWwrc|||3 oll,
4||||4|Substrate
Case|
|Total Device Dissipation @ Tc = 25°C
Derate above 25°C
Lead TemperatureTemperature
|
Junction Temperature Range|||Watt
mw?rc
Tt |
—65 to +175|||||||DUAL-GATE MOSFET
VHFAMPLIFIER
N-CHANNEL—DEPLETION||||||
|Storage Channel Temperature Range||||||||||||||||
||||||||||||,|||||
|ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
[Characteristic
«Symon | Min | tye | Mex |_Unit_|||||||||||||||||
|OFF CHARACTERISTICS||||||||||||||||
|Drain-Source Breakdown Voltage||||||||V(BR)DSX||25|||||Vde|
|(Ip = 10 pAdc, Vs = 0, VG1is = VG2s|=|—5.0 Vdc)||||||||||||||
|Gate 1-Source Breakdown Voltage(1)||||||||V(BR)G1SO||+6.0||+12|+30||Vde|
|(Ig1 = +10 mAdc, Vg2s = Vps = 9)||||||||||||||||
|Gate 2-Source Breakdown Voltage(1)||||||||V(BR)G2SO||+6.0||+12|+30||Vde|
|(Ig2 = +10 mAdc, VGis = Vps = 0)||||||||||||||||
|Gate 1 Leakage Current||||||||IGg1ss||||||||
|(VGis = +5.0 Vde, Vg2s = Vos = 9)||||||||||||+ .040|+10||nAdc|
|(VG1g = —5.0 Vdc, Vg2sg = Vos = 0, Ta||=|150°C)|||||||||_|-10||pAdc|
|Gate 2 Leakage Current||||||||Ig2ss||||||||
|(VG2s = +5.0 Vdc, VGis = Vps = 0)||||||||||||+.050|+10||nAdc|
|(Vg2s = —5.0 Vde, VGgis = Vos = 0, Ta||=|150°C)|||||||||_|-10||pwAdc|
|Gate 1 to Source Cutoff Voitage||||||||VG1S(off)|||||||Vde|
|(Vps = 15 Vdc, Vgasg = 4.0 Vde, Ip = 20||wAdc)||||||||||||||
|Gate 2 to Source Cutoff Voltage||||||||VG2S\(off)||-0.2|||||Vde|
|(Vps = 15 Vde, VG1s = 0, Ip = 20 pAdc)||||||||||||||||
|ON CHARACTERISTICS||||||||||||||||
|Zero-Gate-Voltage Drain Current(2)||||||||Ipss|||||||mAdc|
|(Vps = 15 Vdc, Vgis = 0, VG2s = 4.0 Vdc)|||||3N201,3N202|||||6.0||13|30|||
||||||3N203|||||3.0||11|15|||
|SMALL-SIGNAL CHARACTERISTICS||||||||||||||||
|Forward Transfer Admittance(3)
(Vps = 15 Vdc, Vg2g = 4.0 Vdc, VGis|=|0,f = 1.0 kHz)|||3N201,3N202|||\Ytsl||8.0||12.8|20||mmhos|
||||||3N203|||||7.0||12.5|15|||
|Input Capacitance||||||||Ciss||||3.3||||
|(Vps = 15 Vdc, Vgasg = 4.0 Vdc, Ip =|Ipss,f = 1.0|||MHz)||||||||||||
|Reverse Transfer Capacitance||||||||Crss|||||0.03||pF|
|(Vps = 15 Vdc, VG2sg = 4.0 Vde, Ip =|10|mAdc,f =||1.0 MHz)||||||||||||
|Output Capacitance
.||||||||Coss||||1.7|||pF|
|(Vps = 15 Vde, VGasg = 4.0 Vde, Ip =|Ipss,f = 1.0|||MHz)||||||||||||
|FUNCTIONAL CHARACTERISTICS||||||||||||||||
|Noise Figure|||||||||NF|||||||
|(Vpp = 18 Vdc, VGq = 7.0 Vdc, f = 200 MHz) (Figure 1)||||||3N201||||||1.8|4.5|||
|(Vpp=18Vdc,VGg=6.0Vdc,f=45MHz)(Figure||||3)||3N203||||||5.3|6.0|||
## 3N201, 3N202, 3N203
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ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.)
Common Source Power Gain Gps
(Vpp = 18 Vdc, Vgg = 7.0 Vdc, f = 200 MHz) (Figure 1) 3N201 15 20 25
(Vpp = 18 Vdc, Vgg = 6.0 Vdc, f = 45 MHz) (Figure 3) 3N203 20 25 30
(Vpp = 18 Vdc, fLo = 245 MHz, fpf = 200 MHz) (Figure 2) 3N202 Ge (5) 15 19 25
Bandwidth BW MHz
(Vpp = 18 Vdc, Vgg = 7.0 Vde, f = 200 MHz) (Figure 1) 3N201 9.0
(Vpp = 18 Vdc, fLo = 245 MHz, fpf = 200 MHz) (Figure 2) 3N202 7.5
(Vpp = 18 Vde, VGg = 6.0 Vdc, f = 45 MHz) (Figure 3) 3N203 6.0
Gain Control Gate-Supply Voltage(4) VGG(GC) Vde
(Vpp = 18 Vdc, AGpg = —30 dB, f = 200 MHz) (Figure 1) 3N201 -3.0
(Vpp = 18 Vdc, AGpg = —30 dB, f = 45 MHz) (Figure 3) 3N203 -3.0
(1) All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate-voltage limiting
network is functioning properly.
(2) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2.0%.
(3) This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating.
(4) AGpg is defined as the change in Gpg from the value at VGq = 7.0 volts (3N201) and VGqG = 6.0 volts (3N203).
(5) Power Gain Conversion
FIGURE 1 — 200-MHz TEST CIRCUIT SCHEMATIC
VGG FOR 3N201 O+18V
0.001 uF T RFC
10k TUT
560 k 0.001 uF D L2 fo) To 75-2
T "G2 = | 0.001 pF Load
“on s
From 75-92 S ut
source 0.001 uF C1 8.2 pF 270 C2 39 pF
[om] 4.0-30 pF, ERIE Variable Ceramic, Set for = 22 pF
c2 4.0-30 pF, ERIE Variable Ceramic, Set for = 10 pF
. 1L2 43 Turns,Turns, #14#14 AWGAWG Cooper,Cooper, 1/4"1/4°° !.D.,1.D., 1/6"1/8" PitchPitch
RFC DELEVAN No. 153712, 1.0 4H
FIGURE 2 — 200-MHz-to-45-MHz TEST CIRCUIT SCHEMATIC
245-MH2 FOR 3N202
Local Oscillator
Input(1)
From 50-2 56 2.2 pF
Source Tut
G2 o 45-MHz
ui
= >) IF Output
200-mnrRF Input ( Hon Ss 16 . Turns Co)
From 75-2 To 75-2
Source 0.001 |0.001 $270 | 2.2 Load
27 pF ci ue Ma pF
0.001
ue
110k
O+18V
91k
(1) Amplitude at Input from Local Oscillator = 3 V RMS C1 1.5-7.0 pF, ERIE Variable; Ceramic,: Set for ~_ 4.7 pF
u1 4 Turns, #14 AWG Copper, 1/4" 1.0., 1/6*’ Pitch
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3N201, 3N202, 3N203
**==> picture [461 x 657] intentionally omitted <==**
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FIGURE 3 — 45-MHz TEST CIRCUIT SCHEMATIC
3N203
9.1k °.* TUT 12 pF
VGG O 0.001O OuF . o fo) ToLoad 50-2
Ty
= G1 ° s 3.0k L2
5.6 pF : 1
From 50-2 (0 : 0.001 WF
Source ® 4
46
: [0.001] [uF]
s O
6.2 k : 120
u1 :
:
:
> O+18V
1 14 Turns, #30 AWG Copper, Close-Wound 7/32’ OD form with
ARNOLD ENGINEERING “'J"’ Tuning Core
L2 10 Turns, #30 AWG Copper, Close-Wound 7/32’* OD form with
ARNOLD ENGINEERING “J Tuning Core
TYPICAL CHARACTERISTICS
FIGURE 4 — DRAIN CURRENT versus FIGURE 5 — DRAIN CURRENT versus GATE-ONE to
DRAIN to SOURCE VOLTAGE SOURCE VOLTAGE
ref4 wows OV toss=eemA [TT Td 28w{—+ vos-wv ~—} {| | | | J
x4ceee ee — 2rat} inss=12ama [ | [|reso[| [[|]
Z 2 | a eeee eeeee Z |_| | J | tT tT J YY
So a Ba a Oc
2 6 fy +f 4+ Zig -—+ +} + | 7 tov fo
Ew iy | i [ TT = ey | | [| [T TT [A —T
3 ot I a ot, | [| | | [ 7ye | |
ae= 10 a |)Aa a= 10apL aa4 = S/d 2 Zz
8ee ee 2
re i
20 Y A ee ee 20A eee
a
0 20 40 60 80 10 CT12 #214 «216 «+418 20 a“15 =1.0 eee“0.5 0 eee+0.5 +10
Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vis, GATE-ONE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 6 — SMALL-SIGNAL COMMON-SOURCE GATE-ONE FIGURE 7 — SMALL-SIGNAL COMMON-SOURCE GATE-ONE
FORWARD TRANSFER ADMITTANCE versus FORWARD TRANSFER ADMITTANCE versus
DRAIN CURRENT GATE-ONE to SOURCE VOLTAGE
= 14 S14 -
ayBay ne = Ey [_ loss= 128ma | Vo2s = 4.0V
a : ee ee By a aS
E a =
Sn?3.0i20 Aa eee =aso 30 |ZAZi
Ze
Se a a = °0 1 Nd
ESAT50 2 A ae aNeyAeINTAGa"4 el<=Bresol [VXWe aSa]
SIN OX
Sof ee TS olan a AS
en)oeray tS = io —
=o 420 40 60ee80eee10 12 «+14 «216| |18 20 2= OSalZ 71.0 “0.5 0 *0.5Ct“1.0
Ip, ORAIN CURRENT (mA) VG1s, GATE-ONE to SOURCE VOLTAGE (VOLTS)
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3N201, 3N202, 3N203
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FIGURE 8 — SMALL-SIGNAL COMMON-SOURCE GATE-ONE FIGURE 9 — SMALL-SIGNAL COMMON-SOURCE GATE-ONE
FORWARD TRANSFER ADMITTANCE versus INPUT AND OUTPUT CAPACITANCE versus
GATE-TWO to SOURCE VOLTAGE GATE-TWO-to-SOURCE VOLTAGE
=sosé 13214 lpssVos=15V= 12.8 ma Boyt< jj{_|| be von i — | ~S LT toss= =12.89 V ;|ft —_
Et | | [ | 27 | gz °C Te eee
2= ot | IZ| A| Ty z5,, 1. | | | | | [| Tt
% yo | | ; a ss [ [| [ | Tt PT tT tT fT fT]
= go| | fi Yt — eo sf fr
eo aa Zi 7A | | TT] eed A A OO
oe) a 44 t e 25 a a a
2Zo_&-— 2.0io pV Feir; |]i> || ft| of7 tTtT T TT 1.0“LTo 1. [|[ [|[ [~-T TT7~ ~—TT fy~— [—yy[|
-10 0 +1.0 +2.0 +3.0 +4.0 5.0 -40 -30 -20 -10 O +10 +20 +30 +40 +50
VG2s, GATE-TWO to SOURCE VOLTAGE (VOLTS) Vg2s, GATE-TWO-to-SOURCE VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS
FIGURE 11 — COMMON-SOURCE POWER GAIN AND
FIGURE 10 — COMMON-SOURCE POWER GAIN AND SPOT NOISE FIGURE versus GAIN CONTROL
SPOT NOISE FIGURE versus DRAIN CURRENT GATE-SUPPLY VOLTAGE — 3N201
0628 fff ff ff fT +30ee eee 14
anLptf_|| [eets ff PF ggfeeesee ee eee
Sasf ne Le} | hl -—— 44} Von = 18 Vie 0s
a pie | |Pg vous | m4
25 Aee rT | | | | z f+ 1 AL ircit in Figu a5
we2 SIZSTTT voat s =a0v200mm ref [|([ | || gSy)|||Y Zt | inss=128ma_ ||_| 50%|S
=> yf| ae YSIS for 10 TS 3 7 [| "se
eZ 10 Ipss = 12.8 mA — 2 4 =
soi | _| po Pa [| \ Ff tas
50esaAO OO = 3 ‘40 a[| a = wee |_||
o tL [ | ~— | | [| | [TT]] aoe“ eeee ee ee
0 2.0 40 6.0 8.0 10 12 14 16 18 20 -3.0 -2.0 -1.0 0 +10 +20 +30 +40 +50 +60 +7.0
(p, ORAIN CURRENT (mA) VGGI(GC), GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
FIGURE 13 — SMALL-SIGNAL COMMON-SOURCE
FIGURE 12 — COMMON-SOURCE POWER GAIN CONVERSION POWER GAIN versus
versus DRAIN SUPPLY CURRENT — 3N201 LOCAL OSCILLATOR INPUT VOLTAGE — 3N202
+30 ee —|+ = 20wt) | EE tt
{ = 200 MHz — 2 16
= an | A ec | | ft
o 2 BW = 6.0 MHz
woyY — Sa 10fpi Ipss=. 12.8 mA
2 -10LY Se Ae
er a 4 _ z 0
° pf ap a sf. | | | | tT tt lt
7) 0an1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0rf9.0 WW ° i0 f 1.0| i ft2.0 | 3| ft tt4 5.0
Ippo. ORAIN SUPPLY CURRENT (mA) VaMs. LOCAL OSCILLATOR INPUT VOLTAGE (VOLTS)
**----- End of picture text -----**
3N201, 3N202, 3N203
**==> picture [217 x 181] intentionally omitted <==**
**----- Start of picture text -----**
FIGURE 14 — SMALL-SIGNAL COMMON SOURCE
INSERTION POWER GAIN versus GAIN CONTROL
GATE-SUPPLY VOLTAGE — 3N203
+30 Voo=18V ee
20 naef=45mHz | | [eTfT |
aa
= vA
z4aa2
3
ei, ———————| VY i -[ [ [ J ft fT
ew&y| [|f| [ | [ fT ft | |
Lt fT tT tT ft [tT]
ai _—t-f/t tT tt fT ft yy
a ee ee ee ee ee ee
went tT tT tT tT tT fy tt
-3.0 -2.0 -1.0 0 +10 +20 +30 +40 +50 +60 +70
VGG(GC). GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
**----- End of picture text -----**
## TYPICAL CHARACTERISTICS
**==> picture [466 x 362] intentionally omitted <==**
**----- Start of picture text -----**
FIGURE 15 — SMALL-SIGNAL GATE ONE FORWARD FIGURE 16 — SMALL-SIGNAL GATE ONE INPUT
TRANSFER ADMITTANCE versus FREQUENCY ADMITTANCE versus FREQUENCY
n 00 SS SS SS 10
Sis Voss
3 o = 10ey mA LT P Try tF t tet = rE 50 OsIp 210 maf ro1 PP 5.0
Benn See moan
ee aett As0%
# (LP PT is NE of PT A143
z2= £ "F0 | |T{{|TrittPE PTT TtPTTXPN 2= St10 pp tsor | eh_2
aseeee=>-5.0 tTYr [TT] | tf [|TWfire| =TtTy ete =ee<050eeea os ee ee Fisees ae—1+—05 97 &Ssz
Oeee Pp ee pn
= 7 | 2 Co w
- ; | | tT Tee tyt t oSN. vp 30 p>. ae 03 3
<< -15Se 20 ae- 7 ain 02 2
$ WC TT TP ee ee
2 10 40 100 300 500 1000 40 60 100 200 300 500
1, FREQUENCY (MHz) {, FREQUENCY (MHz)
FIGURE 17 — SMALL-SIGNAL GATE ONE OUTPUT
ADMITTANCE versus FREQUENCY
i —os =aa oe ——— — 010
Zz 0s p= 10 mA st As. |
= 3111. A |,,2
.
32 tt BP wg
:
|
ZA :
5 0.087
2 soltt|I aoe ee05 6
os a eeee oe
001 a 0.
40 60 100 200 300 500
{, FREQUENCY (MHz)
**----- End of picture text -----**
## Package Outline Dimensions
Dimensions are in inches unless otherwise noted.
**==> picture [485 x 3] intentionally omitted <==**
**----- Start of picture text -----**
SE
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**==> picture [220 x 197] intentionally omitted <==**
**----- Start of picture text -----**
TO-206AF (TO-72) METAL
A
‘ el
rel
re P oc
1
ty 4H 34H,
SEATINGPLANE nln F | K — 4
owja |[ [min] MILLIMETERS[ max | MININCHES| MAX
{sa [sev {oe { [o7w]
tleI 8 s52_| 495 | 0.178 | [0195] |
D “ce {| [ax] | $3 | [0170] | 0210 |
“+ aN o {oa [|] [053] [|] [oo] [|] [0021] [|]
1 DS saureersevercA 038 | 0016 | 0019
Mm wweAt G | w {| os)254[ BSC117 | 0036 | oos6 |
HD | « | 1270 [ — [oso | — |
fut {63 [ - [oo | - |
NOTE: ALL RULES AND NOTES ASSOCIATED WITH 10-72 [-m [asec| a5"asc__|
All JEDEC dimensions and notes apply.
**----- End of picture text -----**
**==> picture [35 x 91] intentionally omitted <==**
**----- Start of picture text -----**
3
lo o}
9
PIN 21 . DRAINGATE2
GATE|
4 SOURCE.
ANDSUBSTRATE CASE
**----- End of picture text -----**
## Links
- [View this product on Novapart](https://novapart.co/products/3N201/dual-gate-mosfet-n-channel-to-72-4)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/solid-state/3n201/dual-gate-mosfet-n-channel-to/dp/2857876)
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