# Power MOSFET, N Channel, 30 V, 150 mA, 2.9 ohm, SOT-23, Surface Mount
**URL**: https://novapart.co/products/3LN01C-TB-H./power-mosfet-n-channel-30-v-150-ma-29-ohm-sot-23
**SKU**: 3LN01C-TB-H.
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1360
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 250mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 250mW |
| Rds(On) Test Voltage | 4V |
| On Resistance Rds(On) | 2.9ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 150mA |
| Drain Source On State Resistance | 2.9ohm |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2630394/)
## **Ordering number : EN6260C 3LN01C** ~~___~~ @ **N-Channel Small Signal MOSFET** http://onsemi.com **30V, 0.15A, 3.7** Ω **, Single CP**
## **Features**
- Low ON-resistance
- Ultrahigh-speed switching
- 2.5V drive
## **Specifi cations**
**Absolute Maximum Ratings** at Ta=25°C
|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Drain to Source Voltage|VDSS||30|V|
|Gate to Source Voltage|VGSS||±10|V|
|Drain Current(DC)|ID||0.15|A|
|Drain Current(Pulse)|IDP|PW≤10μs, dutycycle≤1%|0.6|A|
|Allowable Power Dissipation|PD||0.25|W|
|Channel Temperature|Tch||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
**==> picture [510 x 368] intentionally omitted <==**
**----- Start of picture text -----**
Package Dimensions Ordering & Package Information
unit : mm (typ) Device Package Shipping memo
7013A-013
CP
3,000
3LN01C-TB-E SC-59, TO-236, Pb-Free
pcs./reel
SOT-23, TO-236AB
2.9 0.1 3LN01C-TB-E
3 3LN01C-TB-H CP 3,000 Pb-Free
3LN01C-TB-H SC-59, TO-236, and
pcs./reel
SOT-23, TO-236AB Halogen Free
=e
Packing Type: TB Marking
1 2
0.95 0.4
YA
1 : Gate TB
2 : Source
3 : Drain
ar CP Electrical Connection
3
1
2
et
Semiconductor Components Industries, LLC, 2013
June, 2013 61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
0.5
2.5 1.5
0.5
LOT No. LOT No.
0.3
1.1
0.05
**----- End of picture text -----**
**3LN01C**
## **Electrical Characteristics** at Ta=25°C
|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain to Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|30|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=30V, VGS=0V|||1|μA|
|Gate to Source Leakage Current|IGSS|VGS=±8V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=10V, ID=100μA|0.4||1.3|V|
|Forward Transfer Admittance|| yfs||VDS=10V, ID=80mA|0.15|0.22||S|
|Static Drain to Source On-State Resistance|RDS(on)1|ID=80mA, VGS=4V||2.9|3.7|Ω|
||RDS(on)2|ID=40mA, VGS=2.5V||3.7|5.2|Ω|
||RDS(on)3|ID=10mA, VGS=1.5V||6.4|12.8|Ω|
|Input Capacitance|Ciss|VDS=10V, f=1MHz||7.0||pF|
|Output Capacitance|Coss|||5.9||pF|
|Reverse Transfer Capacitance|Crss|||2.3||pF|
|Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||19||ns|
|Rise Time|tr|||65||ns|
|Turn-OFF Delay Time|td(off)|||155||ns|
|Fall Time|tf|||120||ns|
|Total Gate Charge|Qg|VDS=10V, VGS=10V, ID=150mA||1.58||nC|
|Gate to Source Charge|Qgs|||0.26||nC|
|Gate to Drain “Miller” Charge|Qgd|||0.31||nC|
|Diode Forward Voltage|VSD|IS=150mA, VGS=0V||0.87|1.2|V|
## **Switching Time Test Circuit**
**==> picture [127 x 119] intentionally omitted <==**
**----- Start of picture text -----**
VDD=15V
VIN
4V
0V ID=80mA
VIN RL=187.5 Ω
D.C.PW=10 ≤ 1% μ s D VOUT
G
3LN01C
P.G
50 Ω
S
**----- End of picture text -----**
No.6260-2/6
**3LN01C**
**==> picture [483 x 736] intentionally omitted <==**
**----- Start of picture text -----**
ID -- VDS ID -- VGS
0.16 0.30
VDS=10V
0.14 3.5V
0.25
4.0V
0.12
0.20
0.10
0.08 0.15
VGS=1.5V
0.06
0.10
0.04
0.05
0.02
0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0
Drain to Source Voltage, VDS -- V IT00029 Gate to Source Voltage, VGS -- V IT00030
RDS(on) -- VGS RDS(on) -- ID
10 10
Ta=25°C VGS=4V
9
7
8
7 5
6 I D =80mA Ta=75°C
5 40mA 3 25°C
4 --25°C
3 2
2
1
0 1.0
0 1 2 3 4 5 6 7 8 9 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Gate to Source Voltage, VGS -- V IT00031 Drain Current, ID -- A IT00032
RDS(on) -- ID RDS(on) -- ID
10 100
VGS=2.5V 7 V GS =1.5V
7 5
3
5 Ta=75°C
2
25°C
3 --25°C 10 Ta=75°C
7
2 5 --25°C
3 25°C
2
1.0 1.0
0.01 2 3 5 7 0.1 2 3 5 7 1.0 0.001 2 3 5 7 0.01 2 3 5 7 0.1
Drain Current, ID -- A IT00033 Drain Current, ID -- A IT00034
7 RDS(on) -- Ta 1.0 | yfs | -- ID
VDS=10V
7
6 5
3
5
2 25°C
4
0.1
3 7
5
2
3
1 2
0 0.01
--60 --40 --20 0 20 40 60 80 100 120 140 160 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Ambient Temperature, Ta -- °C IT00035 Drain Current, ID -- A IT00036
75°C
Ta= --25°C
ID=80mA, VGS=4.0V
ID=40mA, VGS=2.5V
2.0V
2.5V
3.0V
6.0V 75°C 25°C
Ta=--25°C
Drain Current, ID -- A Drain Current, ID -- A
Ω Ω
Static Drain to Source On-State Resistance, RDS(on) -- Static Drain to Source On-State Resistance, RDS(on) --
Ω Ω
Static Drain to Source On-State Resistance, RDS(on) -- Static Drain to Source On-State Resistance, RDS(on) --
Ω
|yfs -- S
|
Static Drain to Source On-State Resistance, RDS(on) --
Forward Transfer Admittance,
**----- End of picture text -----**
No.6260-3/6
**3LN01C**
**==> picture [472 x 552] intentionally omitted <==**
**----- Start of picture text -----**
IS -- VSD SW Time -- ID
1.0 1000
7 VGS=0V 7 VDD=15V
VGS=4V
5 5
3 3
2 2
tf
0.1 100
7 7 tr
5 5
3 3
2 2 td(on)
0.01 10
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 2 3 5 7 0.1 2
Diode Forward Voltage, VSD -- V IT00037 Drain Current, ID -- A IT00038
100 Ciss, Coss, Crss -- VDS 10 VGS -- Qg
f=1MHz VDS=10V
7 9 ID=150mA
5
8
3
7
2
6
10 5
Ciss
7 4
5 Coss
3
3
2
2 Crss
1
1.0 0
0 2 4 6 8 10 12 14 16 18 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain to Source Voltage, VDS -- V IT00039 Total Gate Charge, Qg -- nC IT00040
PD -- Ta
0.30
0.25
0.20
0.15
0.10
0.05
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT00041
td(off)
°C
Ta=75
25°C--25°C
Source Current, IS -- A
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
Gate to Source Voltage, VGS -- V
Allowable Power Dissipation, PD -- W
**----- End of picture text -----**
No.6260-4/6
**3LN01C**
**Outline Drawing** 3LN01C-TB-E, 3LN01C-TB-H
**==> picture [254 x 370] intentionally omitted <==**
**----- Start of picture text -----**
Mass (g) Unit
0.013
* For reference [mm]
**----- End of picture text -----**
## **Land Pattern Example**
**==> picture [215 x 214] intentionally omitted <==**
**----- Start of picture text -----**
Unit: mm
0.8
0.95 0.95
0
1.
2.4
**----- End of picture text -----**
No.6260-5/6
**3LN01C**
Note on usage : Since the 3LN01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.6260-6/6
## Links
- [View this product on Novapart](https://novapart.co/products/3LN01C-TB-H./power-mosfet-n-channel-30-v-150-ma-29-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/onsemi/3ln01c-tb-h/mosfet-n-ch-30v-0-15a-sot-23/dp/2630394)
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