31DF4

**31DF4 – 31DF6** 

Taiwan Semiconductor 

## **3A, 400V - 600V Super Fast Rectifier** 

## FEATURES 

- High efficiency, Low VF 

- High current capability 

- High surge current capability 

- Low power loss 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

- Switching mode converters and inverters 

- Freewheeling application 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|3|A|
|VRRM|400 - 600|V|
|IFSM|45|A|
|TJ MAX|150|°C|
|Package|DO-201AD||
|Configuration|Single die||



## Pd) ROHS HALOGEN — compuant FREE 

## MECHANICAL DATA 

- Case: DO-201AD 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Pure tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 1A whisker test 

- Polarity: Indicated by cathode band 

- Weight: 1.20g (approximately) 

## **DO-201AD** 

## Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER|SYMBOL|31DF4|31DF6|UNIT|
|Marking code on the device||31DF4|31DF6||
|Repetitive peak reverse voltage|VRRM|400|600|V|
|Reverse voltage, total rms value|VR(RMS)|280|420|V|
|Forward current|IF|3||A|
|Surge peak forward current, 8.3ms single<br>halfsinewave superimposed on ratedload|IFSM|45||A|
|Junction temperature|TJ|-55 to +150||°C|
|Storage temperature|TSTG|-55 to +150||°C|



1 Version: G2105 

**31DF4 – 31DF6** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-ambient thermal resistance|RӨJA|80|°C/W|



|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage(1)|IF= 3A, TJ= 25°C|VF||1.7|V|
|Reverse current @ rated VR<br>(2)|TJ= 25°C|IR|-|20|µA|
||TJ= 125°C||-|100|µA|
|Reverse recovery time|IF= 0.5A, IR= 1.0A,<br>Irr=0.25A|trr|-|35|ns|



## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)|PACKAGE|PACKING|
|---|---|---|
|31DFx|DO-201AD|1,250 / Tape & Reel|
|31DFx A0G|DO-201AD|500 / Ammo box|



## **Notes:** 

1. "x" defines voltage from 400V (31DF4) to 600V (31DF6) 

2 Version: G2105 

5 ——__$_$___________ **31DF4 – 31DF6** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [502 x 652] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 1000<br>3<br>HTT<br>2 100<br>1<br>f=1.0MHz<br>Vsig=50mVp-p<br>0 10 eTPLLennaiELT<br>25 50 75 100 125 150 0.1 1 10 100<br>LEAD TEMPERATURE (°C)  REVERSE VOLTAGE (V)<br>          Fig.3 Typical Reverse Characteristics       Fig.4 Typical Forward Characteristics<br>100 10<br>TJ=125 ° C<br>10<br>Sees) es Sees eee<br>1<br>Ss TJ=25 ° C LOZ<br>1<br>e e e EAE<br>Pulse width 300μs Pulse width 300μs<br>1% duty cycle<br>0.1 —————_——a 0.1 f Fe<br>10 20 30 40 50 60 70 80 90 100 1.4 1.5 1.6 1.7 1.8<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>      Fig.5 Maximum Non-Repetitive Forward Surge Current<br>60<br>8.3ms single half sine wave<br>45<br>30 cntBeene _| HtHttt<br>15 Poe<br>0 ere TE<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>                 3                                                               Version: G2105<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (µA)  INSTANTANEOUS FORWARD CURRENT (A)<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


**31DF4 – 31DF6** TAIWANSEMICONDUCTOR[pg Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: G2105 

**31DF4 – 31DF6** Taiwan Semiconductor $5 Eee} A @i @i@iaiai ii 

Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

## **DO-201AD** 

D—| 

## MARKING DIAGRAM 

P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code 

5 Version: G2105 

**31DF4 – 31DF6** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: G2105