# Bipolar (BJT) Single Transistor, NPN, 30 V, 700 mA, 700 mW, SOT-23, Surface Mount
**URL**: https://novapart.co/products/30C02CH-TL-E/bipolar-bjt-single-transistor-npn-30-v-700-ma-mw
**SKU**: 30C02CH-TL-E
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0710
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 700mW |
| Dc Current Gain Hfe | 300hFE |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 540MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 300hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 700mA |
| Collector Emitter Voltage Max | 30V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3368611/)
**Ordering number : EN7363A**
## **30C02CH**
## **Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single CPH3**
http://onsemi.com
## **Applications**
- Low-frequency Amplifi er, high-speed switching, small motor drive
## **Features**
- Large current capacity
- Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330mΩ[IC=0.7A, IB=35mA]
- Ultrasmall package facilitates miniaturization in end products
- Small ON-resistance (Ron)
## **Specifi cations**
## **Absolute Maximum Ratings** at Ta=25°C
|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Collector-to-Base Voltage|VCBO||40|V|
|Collector-to-Emitter Voltage|VCEO||30|V|
|Emitter-to-Base Voltage|VEBO||5|V|
|Collector Current|IC||700|mA|
|Collector Current(Pulse)|ICP||1.4|A|
|Collector Dissipation|PC|Mounted on a ceramic board(600mm
2×0.8mm)|700|mW|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
## **Package Dimensions**
unit : mm (typ)
7015A-003
## **Product & Package Information**
- Package
: CPH3
- JEITA, JEDEC : SC-59, TO-236, SOT-23
- Minimum Packing Quantity : 3,000 pcs./reel
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30C02CH-TL-E
2.9 0.15 Packing Type: TL
3
0.05
TL
i a
1 2
0.95 0.4 1 : Base
Electrical Connection
2 : Emitter
3 : Collector
3
CPH3
1
a
2
0.6
0.2
2.8 1.6
0.6
0.2
0.9
**----- End of picture text -----**
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**----- Start of picture text -----**
Packing Type: TL Marking
TL
CL LOT No.
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Semiconductor Components Industries, LLC, 2013 **August, 2013**
80812 TKIM/O2203 TSIM TA-100140 No.7363-1/6
**30C02CH**
## **Electrical Characteristics** at Ta=25°C
|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Collector Cutoff Current|ICBO|VCB=30V, IE=0A|||100|nA|
|Emitter Cutoff Current|IEBO|VEB=4V, IC=0A|||100|nA|
|DC Current Gain|hFE|VCE=2V, IC=50mA|300||800||
|Gain-Bandwidth Product|fT|VCE=10V, IC=50mA||540||MHz|
|Output Capacitance|Cob|VCB=10V, f=1MHz||3.3||pF|
|Collector-to-Emitter Saturation Voltage|VCE(sat)|IC=200mA, IB=10mA||85|190|mV|
|Base-to-Emitter Saturation Voltage|VBE(sat)|IC=200mA, IB=10mA||0.9|1.2|V|
|Collector-to-Base Breakdown Voltage|V(BR)CBO|IC=10μA, IE=0A|40|||V|
|Collector-to-Emitter Breakdown Voltage|V(BR)CEO|IC=1mA, RBE=∞|30|||V|
|Emitter-to-Base Breakdown Voltage|V(BR)EBO|IE=10μA, IC=0A|5|||V|
|Turn-On Time|ton|See specif ed Test Circuit.||35||ns|
|Storage Time|tstg|||255||ns|
|Fall Time|tf|||40||ns|
## **Switching Time Test Circuit**
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IB1
PW=20 μ s OUTPUT
D.C. ≤ 1% IB2
INPUT VR RB RL
50 Ω
+ +
220 μ F 470 μ F
VBE= --5V VCC=12V
**----- End of picture text -----**
IC=20IB1= --20IB2=300mA
## **Ordering Information**
|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|30C02CH-TL-E|CPH3|3,000pcs./reel|Pb Free|
**==> picture [219 x 183] intentionally omitted <==**
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IC -- VCE
700
600
500
400
300
200 400μA
200μA
100
IB=0
0
0 100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV IT05082
1mA
3mA
2mA
7mA
5mA
10mA
50mA
15mA
30mA 20mA
Collector Current, IC -- mA
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**==> picture [216 x 184] intentionally omitted <==**
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IC -- VBE
800
VCE=2V
700
600
500
400
300
200
100
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE -- V IT05083
°C
Ta=75
°C
25
°C
--25
Collector Current, IC -- mA
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**30C02CH**
**==> picture [484 x 737] intentionally omitted <==**
**----- Start of picture text -----**
hFE -- IC VCE(sat) -- IC
1000 1000
VCE=2V 7 IC / IB=20
5
7
3
2
5
100
7
5
3 3
2
10
2 7
5
3
2
100 1.0
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05084 Collector Current, IC -- mA IT05085
VCE(sat) -- IC VBE(sat) -- IC
1000 10
IC / IB=50 IC / IB=20
7 7
5 5
3 3
2 2
100 1.0
7 7
5 5
3 3
2 2
10 0.1
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05086 Collector Current, IC -- mA IT05087
Cob -- VCB fT -- IC
10 1000
f=1MHz VCE=10V
7 7
5 5
3 3
2 2
1.0 100
1.0 2 3 5 7 10 2 3 5 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector-to-Base Voltage, VCB -- V IT05088 Collector Current, IC -- mA IT05089
Ron -- IB PC -- Ta
10 800
f=1MHz 1kΩ
7 IN OUT
700
5 1kΩ
3 600
IB
2
500
1.0 400
7
300
5
3 200
2
100
0.1 0
0.1 2 3 5 7 1.0 2 3 5 7 10 0 20 40 60 80 100 120 140 160
Base Current, IB -- mA IT06793 Ambient Temperature, Ta -- °C IT05091
Ta=--25°C
--25°C
25°C
Ta=75°C
75°C
25°C
°C
Ta=75
°C
--25
°C
--25
°C
25
°C
Ta=75
°C
25
Mounted on a ceramic board(600mm2✕
0.8mm)
DC Current Gain, hFE
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- V
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, fT -- MHz
Ω
ON Resistance, Ron --
Collector Dissipation, PC -- mW
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**30C02CH**
## **Embossed Taping Specifi cation** 30C02CH-TL-E
No.7363-4/6
**30C02CH**
**==> picture [81 x 22] intentionally omitted <==**
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Outline Drawing
30C02CH-TL-E
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## **Land Pattern Example**
**==> picture [482 x 370] intentionally omitted <==**
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Mass (g) Unit Unit: mm
0.013
* For reference [mm]
0.6
0.95 0.95
1.4
2.4
**----- End of picture text -----**
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**30C02CH**
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.7363-6/6
## Links
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- [Supplier page](https://es.farnell.com/en-ES/on-semiconductor/30c02ch-tl-e/trans-npn-30v-0-7a-150deg-c-0/dp/3368611)
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