# Power MOSFET, N Channel, 900 V, 8 A, 1.3 ohm, TO-220SIS, Through Hole

![Product image](https://novapart.co/image/farnell:1300784/)

**URL**: https://novapart.co/products/2SK3799/power-mosfet-n-channel-900-v-8-a-13-ohm-to-220sis
**SKU**: 2SK3799
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5600
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 50W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 50W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 1.3ohm |
| Transistor Case Style | TO-220SIS |
| Drain Source Voltage Vds | 900V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 1.3ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1300784/)

2SK3799 

## TOSHIBA Field Effect Transistor  Silicon N-Channel MOS Type (π-MOSIV) 

## **2SK3799** 

## Switching Regulator Applications 

Unit: mm 

ow drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) igh forward transfer admittance : |Yfs| = 6.0 S (typ.) ow leakage current : IDSS = 100μA (max) (VDS = 720 V) nhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 

## **Maximum Ratings (Ta = 25°C)** 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Rating|Unit|
|a|Drain-source voltage|VDSS|900|V|
|Drain-gate voltage (RGS = 20 kΩ)|VDGR|900|V|
|Gate-source voltage|VGSS|±30|V|
|DC|(Note 1)|ID|8|A|
|Drain current|
|Pulse (Note 1)|IDP|24|A|
|eeee|ese|e|se|g———i;|on|
|Drain power dissipation|PD|50|W|
|Single pulse avalanche energy  (Note 2)|EAS|1080|mJ|
|Avalanche current|IAR|8|A|JEDEC|
|Repetitive avalanche energy  (Note 3)|EAR|5|mJ|JEITA|
|Channel temperature|Tch|150|°C|TOSHIBA|
|Storage temperature range|Tstg|−55~150|°C|

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|||
|---|---|
|1. Gate|
|2. Drain|
|3. Source|
|JEDEC|—|
|JEITA|SC-67|
|TOSHIBA|2-10U1B|

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Weight: 1.7 g (typ.) 

## **Thermal Characteristics** 

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||||||
|---|---|---|---|---|
|Thermal Characteristics|2|
|Characteristic|Symbol|Max|Unit|
|Thermal resistance, channel to case|Rth (ch−c)|2.5|°C / W|
|Thermal resistance, channel to ambient|Rth (ch−a)|62.5|°C / W|1|
|Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.|
|Note 2: VDD = 90 V, Tch = 25°C (initial), L = 30.9 mH, RG = 25Ω, IAR = 8 A|
|3|

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Note 3: Repetitive rating: pulse width limited by maximum channel temperature. 

This transistor is an electrostatic-sensitive device. Handle with care. 

2005-01-24 

1 

2SK3799 

## **Electrical Characteristics (Ta = 25°C)** 

|Characteristic<br>~~pf~~|Characteristic<br>~~pf~~|Symbol<br>~~pf~~<br>~~|~~|Test Condition<br>~~pf~~<br>~~|___{~~|Min<br>~~pf~~<br>~~___{{ft~~|Typ.<br>~~pf~~<br>~~{ft~~|Max<br>~~pf~~<br>~~{ft~~|Unit<br>~~pf~~<br>~~{ft~~|
|---|---|---|---|---|---|---|---|
|Gate leakage current<br>~~pf~~||IGSS<br>~~pf~~<br>~~|~~|VGS= ±30 V, VDS= 0 V<br>~~pf~~<br>~~|___{~~|—<br>~~pf~~<br>~~___{{ft~~|—<br>~~pf~~<br>~~{ft~~|±10<br>~~pf~~<br>~~{ft~~|µA<br>~~pf~~<br>~~{ft~~|
|Drain-source breakdown voltage||V(BR) GSS<br>~~|~~|IG= ±10µA, VGS= 0 V<br>~~| ___{~~|±30<br>~~___{ {ft~~|—<br>~~{ft~~|—<br>~~{ft~~|V<br>~~{ft~~|
|Drain cut-off current||IDSS|VDS= 720 V, VGS= 0 V|—|—|100|µA|
|Drain-source breakdown voltage||V(BR) DSS|ID= 10 mA, VGS= 0 V|450|—|—|V|
|Gate threshold voltage||Vth|VDS= 10 V, ID= 1 mA|2.0|—|4.0|V|
|Drain-source ON resistance||RDS (ON)|VGS= 10 V, ID= 4 A|—|1.0|1.3|Ω|
|Forward transfer admittance<br>~~OEE~~|||Yfs|<br>~~OEE~~|VDS= 15 V, ID= 4 A<br>~~OEE~~|3.5<br>~~OEE~~|6.0<br>~~OEE~~|—<br>~~OEE~~|S<br>~~OEE~~|
|Input capacitance<br>~~OEE~~||Ciss<br>~~OEE~~|VDS= 25 V, VGS= 0 V, f = 1 MHz<br>~~OEE~~|—<br>~~OEE~~|2200<br>~~OEE~~|—<br>~~OEE~~|pF<br>~~OEE~~|
|Reverse transfer capacitance<br>~~OEE~~||Crss<br>~~OEE~~||—<br>~~OEE~~|45<br>~~OEE~~|—<br>~~OEE~~||
|Output capacitance<br>~~OEE~~||Coss<br>~~OEE~~||—<br>~~OEE~~|190<br>~~OEE~~|—<br>~~OEE~~||
|Switching time<br>~~EE~~<br>~~A~~<br>~~Se~~|Rise time<br>~~EE~~<br>~~A~~|tr<br>~~EE~~<br>~~A~~|Duty ≤ 1%, tw= 10 µs <br>0 V<br>10 V<br>VGS<br>RL= 100Ω<br>VDD≈ 400 V<br>ID= 4 A<br>Output<br>4.7Ω<br>~~EE~~<br>~~A~~<br>~~Se~~|—<br>~~EE~~<br>~~A~~|25<br>~~EE~~<br>~~A~~|—<br>~~EE~~<br>~~A~~|ns<br>~~A~~<br>~~Se~~|
||Turn-on time<br>~~EE~~<br>~~A~~|ton<br>~~EE~~<br>~~A~~||—<br>~~EE~~<br>~~A~~|65<br>~~EE~~<br>~~A~~|—<br>~~EE~~<br>~~A~~||
||Fall time<br>~~A~~|tf<br>~~A~~||—<br>~~A~~|20<br>~~A~~|—<br>~~A~~||
||Turn-off time<br>~~A~~<br>~~Se~~|toff<br>~~A~~<br>~~Se~~||—<br>~~A~~<br>~~Se~~|120<br>~~A~~<br>~~Se~~|—<br>~~A~~<br>~~Se~~||
|Total gate charge (Gate-source<br>plus gate-drain)<br>~~Se~~||Qg<br>~~Se~~|VDD≈ 400 V, VGS= 10 V, ID= 8 A<br>~~Se~~|—<br>~~Se~~|60<br>~~Se~~|—<br>~~Se~~|nC<br>~~Se~~|
|Gate-source charge<br>~~Se~~||Qgs<br>~~Se~~||—<br>~~Se~~|34<br>~~Se~~|—<br>~~Se~~||
|Gate-drain (“miller”) charge<br>~~Se~~||Qgd<br>~~Se~~||—<br>~~Se~~|26<br>~~Se~~|—<br>~~Se~~||



## **Marking** 

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K3799 Part No. (or abbreviation code)<br>Lot No.<br>**----- End of picture text -----**<br>


A line indicates lead (Pb)-free package or lead (Pb)-free finish. 

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ID – VDS<br>10<br>COMMON SOURCE<br>Tc = 25°C<br>PULSE TEST  15<br>8 10<br>6<br>5.5<br>6 5.25<br>5<br>4<br>4.75<br>2 VGS = 4.5 V<br>0<br>0  2  4  6  8  10<br>DRAIN−SOURCE VOLTAGE  VDS  (V)<br>ID – VGS<br>20<br>COMMON SOURCE<br>VDS = 20 V<br>PULSE TEST<br>16<br>12 25<br>8<br>100  Tc = −55°C<br>4<br>0<br>0  2  4  6  8  10<br>GATE−SOURCE VOLTAGE  VGS  (V)<br>  (A)<br>D<br>DRAIN CURRENT  I<br>  (A)<br>D<br>DRAIN CURRENT  I<br>**----- End of picture text -----**<br>


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ID – VDS<br>20<br>COMMON SOURCE<br>Tc = 25°C<br>PULSE TEST<br>16<br>15<br>10<br>12 6<br>5.5<br>8<br>5<br>4<br>VGS = 4.5 V<br>0<br>0 4 8 12  16  20<br>DRAIN−SOURCE VOLTAGE  VDS  (V)<br>VDS – VGS<br>20<br>COMMON SOURCE<br>Tc = 25°C<br>PULSE TEST<br>16<br>12<br>ID = 8 A<br>8<br>4<br>4<br>2<br>0<br>0 4 8 12  16  20<br>GATE−SOURCE VOLTAGE  VGS  (V)<br>  (A)<br>D<br>DRAIN CURRENT  I<br>  (V)<br>DS<br>SOURCE VOLTAGE  V<br>−<br>DRAIN<br>**----- End of picture text -----**<br>


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⎪Yfs⎪ − ID 10 RDS (ON) − ID<br>100 COMMON SOURCE<br>COMMON SOURCE<br>VDS = 20 V  Tc = 25°C<br>PULSE TEST  PULSE TEST<br>VGS = 10 V<br>10 1<br>Tc = −55°C  100<br>25<br>1 0.1<br>0.1  1  10  100  1  10  100<br>DRAIN CURRENT  ID  (A) DRAIN CURRENT  ID  (A)<br>)Ω<br>  (S)   (<br>⎪<br>fs<br>⎪Y RDS (ON)<br>SOURCE ON RESISTANCE<br>−<br>DRAIN<br>FORWARD TRANSFER ADMITTANCE<br>**----- End of picture text -----**<br>


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RDS (ON) − Tc<br>5<br>COMMON SOURCE<br>VGS = 10 V<br>PULSE TEST<br>4<br>3<br>ID = 8 A<br>2<br>4  2<br>1<br>0<br>−80  −40  0  40  80  120  160<br>CASE TEMPERATURE  Tc  (°C)<br>)Ω<br>  (<br>DS (ON)<br>R<br>SOURCE ON RESISTANCE<br>−<br>DRAIN<br>**----- End of picture text -----**<br>


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C − VDS<br>10000<br>Ciss<br>1000<br>Coss<br>100<br>Crss<br>10<br>COMMON SOURCE<br>VGS = 0 V<br>f = 1 MHz<br>Tc = 25°C<br>1<br>0.1  1  10  100<br>DRAIN−SOURCE VOLTAGE  VDS  (V)<br>PD – Tc<br>80<br>60<br>40<br>20<br>0<br>0  40  80  120  160<br>CASE TEMPERATURE  Tc  (°C)<br>CAPACITANCE  C  (pF)<br>  (W)<br>D<br>DRAIN POWER DISSIPATION  P<br>**----- End of picture text -----**<br>


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IDR − VDS<br>100<br>COMMON SOURCE<br>Tc = 25°C<br>PULSE TEST<br>10<br>1<br>10<br>5 1<br>3 VGS = 0 V<br>0.1<br>0 −0.4 −0.8 −1.2  −1.6<br>DRAIN−SOURCE VOLTAGE  VDS  (V)<br>  (A)<br>DR<br>DRAIN REVERSE CURRENT  I<br>**----- End of picture text -----**<br>


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Vth − Tc<br>5<br>4<br>3<br>2<br>1<br>COMMON SOURCE<br>VDS = 10 V<br>ID = 1 mA<br>PULSE TEST<br>0<br>−80  −40  0 40 80  120  160<br>CASE TEMPERATURE  Tc  (°C)<br>DYNAMIC INPUT/OUTPUT<br>CHARACTERISTICS<br>500 20<br>COMMON SOURCE<br>ID = 8 A<br>Tc = 25°C<br>VDS PULSE TEST<br>400 16<br>300 100  12<br>200 VDS = 400 V<br>200 8<br>VGS<br>100 4<br>0 0<br>0  20  40  60  80  100<br>TOTAL GATE CHARGE  Qg  (nC)<br>  (V)<br>th<br>GATE THRESHOLD VOLTAGE  V<br>  (V)   (V)<br>DS GS<br>SOURCE VOLTAGE  VDRAIN− SOURCE VOLTAGE  VGATE−<br>**----- End of picture text -----**<br>


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rth – tw<br>**----- End of picture text -----**<br>


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10<br>1<br>Duty=0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02  PDM<br>t<br>0.01 0.01  SINGLE PULSE T<br>Duty = t/T<br>Rth (ch-c) = 2.5°C/W<br>0.001<br>10μ 100μ 1ｍ 10ｍ 100ｍ 1  10<br>PULSE WIDTH  tw  (s)<br>SAFE OPERATING AREA  EAS – TchAS – Tch – Tchch<br>100 2000<br>ID max (PULSE)  *<br>100  μs  * 1600<br>10 ID max (CONTINUOUS)<br>1 ms  *<br>1200<br>1<br>800<br>DC OPERATION<br>Tc = 25°C<br>400<br>0.1<br>*   SINGLE NONPETITIVE PULSE<br>Tc = 25°C<br>Curves must be derated linearly  0<br>with increase in temperature. VDSS max 25 50 75 100  125<br>0.01<br>1  10  100  1000  10000 CHANNEL TEMPERATURE (INITIAL)  Tch  (°C)ch  (°C)  (°C)<br>DRAIN−SOURCE VOLTAGE  VDS  (V)<br>th (ch-c)<br>/R<br>th (t)<br>IMPEDANCE  r<br>NORMALIZED TRANSIENT THERMAL<br>  (mJ)<br>  (A) AS<br>D<br>DRAIN CURRENT  I AVALANCHE ENERGY  E<br>**----- End of picture text -----**<br>


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EAS – TchAS – Tch – Tchch<br>2000<br>1600<br>1200<br>800<br>400<br>0<br>25 50 75 100  125  150<br>CHANNEL TEMPERATURE (INITIAL)  Tch  (°C)ch  (°C)  (°C)<br>  (mJ)<br>AS<br>AVALANCHE ENERGY  E<br>**----- End of picture text -----**<br>


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BVDSS<br>15 V<br>−15 V IAR<br>VDD VDS<br>TEST CIRCUIT WAVE FORM<br>VRDDG == 25  90 V, L Ω  = 30.9 mH  ΕAS = 21 ⋅L ⋅I2 ⋅ ⎛⎜ [⎜] ⎝ BVDSSBVDSS− VDD ⎞⎟ [⎟] ⎠<br>**----- End of picture text -----**<br>


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## **RESTRICTIONS ON PRODUCT USE** 

030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 

2005-01-24 

6 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/toshiba/2sk3799/mosfet-n-900v-to-220sis/dp/1300784)
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