# Power MOSFET, N Channel, 60 V, 30 A, 0.02 ohm, TO-220F, Through Hole

![Product image](https://novapart.co/image/farnell:2845353/)

**URL**: https://novapart.co/products/2SK3703-1E/power-mosfet-n-channel-60-v-30-a-002-ohm-to-220f
**SKU**: 2SK3703-1E
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 25W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.02ohm |
| Transistor Case Style | TO-220F |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.02ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845353/)

**Ordering number : EN7681B** 

## **2SK3703** 

## **N-Channel Power MOSFET 60V, 30A, 26m** Ω **, TO-220F-3SG** 

http://onsemi.com 

## **Features** 

- ON-resistance  RDS(on)1=20mΩ (typ.) 

   - Input capacitance  Ciss=1780pF (typ.) 

- 4V drive 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Drain-to-Source Voltage|VDSS||60|V|
|Gate-to-Source Voltage|VGSS||±20|V|
|Drain Current(DC)|ID||30|A|
|Drain Current(Pulse)|IDP|PW≤10μs, dutycycle≤1%|120|A|
|Allowable Power Dissipation|PD||2.0|W|
|||Tc=25°C|25|W|
|Channel Temperature|Tch||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
|Avalanche Energy (Single Pulse)*1|EAS||135|mJ|
|Avalanche Current *2|IAV||30|A|



Note : * 1 VDD=20V, L=200μH, IAV=30A (Fig.1) 

* 2 L≤200μH, Single pulse 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Package Dimensions** 

unit : mm (typ) 

7529-001 

## **Product & Package Information** 

• Package : TO-220F-3SG • JEITA, JEDEC : SC-67 

• Minimum Packing Quantity : 50 pcs./magazine 

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**----- Start of picture text -----**<br>
10.16 4.7 2SK3703-1E<br>3.18 2.54<br>Marking  Electrical Connection<br>2<br>A<br>K3703 1<br>LOT No.<br>2.76<br>1.47 MAX 2 :<br>0.8 DETAIL-A (0.84) 3<br>1 2 3<br>0.5 1 : Gate<br>FRAME 2 : Drain<br>EMC 3 : Source<br>a 2.54 a 2.54 @ TO-220F-3SG<br>3.3<br>6.68<br>15.87<br>15.8<br>3.23<br>12.98<br>)(   1.0<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 **July, 2013** 

51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813  No.7681-1/7 

**2SK3703** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|60|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=60V, VGS=0V|||1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=10V, ID=1mA|1.2||2.6|V|
|Forward Transfer Admittance|| yfs||VDS=10V, ID=15A|13|22||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=15A, VGS=10V||20|26|mΩ|
||RDS(on)2|ID=15A, VGS=4V||28|40|mΩ|
|Input Capacitance|Ciss|VDS=20V, f=1MHz||1780||pF|
|Output Capacitance|Coss|||266||pF|
|Reverse Transfer Capacitance|Crss|||197||pF|
|Turn-ON Delay Time|td(on)|See Fig.2||16.5||ns|
|Rise Time|tr|||110||ns|
|Turn-OFF Delay Time|td(off)|||166||ns|
|Fall Time|tf|||144||ns|
|Total Gate Charge|Qg|VDS=30V, VGS=10V, ID=30A||40||nC|
|Gate-to-Source Charge|Qgs|||6.5||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||11.5||nC|
|Diode Forward Voltage|VSD|IS=30A, VGS=0V||1.0|1.2|V|



## **Fig.1 Avalanche Resistance Test Circuit** 

**Fig.2 Switching Time Test Circuit** 

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**----- Start of picture text -----**<br>
VIN VDD=30V<br>L<br>10V<br>0V<br>≥ 50 Ω ID=15A<br>VIN RL=2 Ω<br>2SK3703 D VOUT<br>10V PW=10 μ s<br>50 Ω VDD D.C. ≤ 1%<br>0V<br>G<br>2SK3703<br>P.G 50 Ω S<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|2SK3703-1E|TO-220F-3SG|50pcs./magazine|Pb Free|



No.7681-2/7 

**2SK3703** 

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ID  --  VDS ID  --  VGS<br>50 Tc=25°C 50 VDS=10V<br>45 45<br>40 40<br>35 35<br>30 30<br>25 25<br>20 20<br>15 V GS =3V 15<br>10 10<br>5 5<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Drain-to-Source Voltage, VDS  --  V IT05386 Gate-to-Source Voltage, VGS  --  V IT05387<br>RDS(on)  --  VGS RDS(on)  --  Tc<br>70 60<br>ID=15A<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>10<br>10<br>0 0<br>2 3 4 5 6 7 8 9 10 --50 --25 0 25 50 75 100 125 150<br>Gate-to-Source Voltage, VGS  --  V IT05388 Case Temperature,  Tc  --  °C IT05389<br>| yfs  | --  ID IS  --  VSD<br>100 5<br>7 32 VGS=0V<br>5 10<br>3 5 [7]<br>3<br>2 2<br>1.0<br>10 5 [7]<br>3<br>7 2<br>5 0.1<br>5 [7]<br>3<br>3<br>2 2<br>0.01<br>1.0 5 [7]<br>3<br>7 2<br>5 0.001<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 0.3 0.6 0.9 1.2<br>Drain Current, ID  --  A IT05390 Diode Forward Voltage, VSD  --  V IT05391<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>5 5<br>VDD=30V f=1MHz<br>3 VGS=10V 3<br>2 2 Ciss<br>1000<br>100<br>7<br>7<br>5<br>5<br>3<br>3<br>2<br>2<br>100<br>10 7<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 30<br>Drain Current, ID  --  A IT05392 Drain-to-Source Voltage, VDS  --  V IT05393<br>tf<br>td(on)<br>25°C<br> --25°C<br>td(off)<br>Tc=75°C<br>4V<br>Crss<br>Coss<br>ID=15A, VGS=10V<br>ID=15A, VGS=4V<br>°C<br>25<br>°C<br>75<br>°C<br>Tc= --25<br>tr<br>6V<br>8V<br>25°C<br>10V<br>Tc=75°C<br>--25°C<br>25°C<br>Tc=75°C<br>°C<br>25<br>°C<br>75<br>°C<br>Tc= --25<br>°C<br>--25<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Ω Ω<br>Static-Drain-to-Source  On-State Resistance, RDS(on)  --  m Static-Drain-to-Source  On-State Resistance, RDS(on)  --  m<br>|  --  S<br>fs<br>y<br>|<br>Source Current, IS  --  A<br>Forward Transfer Admittance,<br>Ciss,  Coss,  Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


No.7681-3/7 

**2SK3703** 

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**----- Start of picture text -----**<br>
VGS  --  Qg A S O<br>10 1000<br>VDS=30V 75<br>9 ID=30A 3<br>8 2 I DP =120A(PW ≤ 10 μ s)<br>100<br>7 7<br>5 ID=30A<br>3<br>6<br>2<br>5 10<br>7<br>5<br>4<br>3 Operatuon in this<br>3 2 area is limited by R DS (on).<br>1.0<br>2 7<br>5<br>1 32 Tc=25 ° C<br>0 0.1 Single pulse<br>0 5 10 15 20 25 30 35 40 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100<br>Total Gate Charge, Qg  --  nC IT05394 Drain-to-Source Voltage, VDS  --  V IT16832<br>PD  --  Ta PD  --  Tc<br>2.5 35<br>30<br>2.0<br>25<br>1.5<br>20<br>15<br>1.0<br>10<br>0.5<br>5<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C IT05397 Case Temperature,  Tc  --  °C IT05396<br>EAS  --  Ta<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature, Ta  --  °C IT10478<br>10ms<br>DC operation100ms<br>1ms<br>100<br>μs<br>10<br>Drain Current, ID  --  A μs<br>Gate-to-Source Voltage, VGS  --  V<br>Allowable Power Dissipation, PD  --  W Allowable Power Dissipation, PD  --  W<br>Avalanche Energy derating factor  --  %<br>**----- End of picture text -----**<br>


No.7681-4/7 

**2SK3703** 

## **Magazine Specifi cation** 

2SK3703-1E 

No.7681-5/7 

**2SK3703** 

**Outline Drawing** 2SK3703-1E 

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Mass (g) Unit<br>1.8<br>* For reference [mm]<br>**----- End of picture text -----**<br>


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No.7681-6/7 

**2SK3703** 

Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

No.7681-7/7 



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- [Supplier page](https://es.farnell.com/en-ES/onsemi/2sk3703-1e/mosfet-n-ch-60v-30a-to-220f-3sg/dp/2845353)
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