# Power MOSFET, N Channel, 100 V, 73 A, 0.025 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1208657/)

**URL**: https://novapart.co/products/2SK3586-01/power-mosfet-n-channel-100-v-73-a-0025-ohm-to
**SKU**: 2SK3586-01
**Manufacturer**: FUJI ELECTRIC
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.3100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 270W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 270W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.025ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 73A |
| Drain Source On State Resistance | 0.025ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1208657/)

## - 2SK3586 01 ~~So RSETRIE~~ _**FUJI POWER MOSFET**_ **N-CHANNEL SILICON POWER MOSFET** _**Super FAP-G Series**_ 

## **Outline Drawings   (mm)** 

## **Features** 

**==> picture [117 x 322] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220AB<br>a 7<br>o<br>Type nore - i L<br>OOO<br>Drain(D)<br>|<br>Gate(G)<br>Source(S)<br>**----- End of picture text -----**<br>


**High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof** 

## **Applications** 

**Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters** 

## **Maximum ratings and characteristicAbsolute maximum ratings** 

**(Tc=25°C  unless otherwise specified)** 

||**Maximum ratings and characteristicAbsolute maximum ratingsAbsolute maximum ratings**<br>**(Tc=25°C  unless otherwise specified)**<br>~~ee~~|**Maximum ratings and characteristicAbsolute maximum ratingsAbsolute maximum ratings**<br>**(Tc=25°C  unless otherwise specified)**<br>~~ee~~|**Maximum ratings and characteristicAbsolute maximum ratingsAbsolute maximum ratings**<br>~~ee~~|
|---|---|---|---|
||**Symbol**<br>~~ee~~||**Ratings**<br>~~ee~~|
|Drain-source   voltage|VDS<br>~~ee~~||100<br>~~ee~~|
||VDSX   *5<br>~~ee~~<br>eeeee||70<br>~~ee~~<br>eee|
|Continuous  drain  current|ID<br>~~ee~~<br>eeeee<br>ee||±50<br>~~ee~~<br>eee<br>ee|
|Pulsed  drain  current|ID(puls]<br>eeeee<br>ee<br>ee||±200<br>eee<br>ee<br>ee|
|Gate-source  voltage|VGS<br>ee<br>ee||±30<br>ee<br>ee|
|Non-repetitive Avalanche current|IAS    *2<br>ee<br>ee<br>ee||50<br>ee<br>ee<br>ee|
|Non-repetitive Avalanche current<br>Maximum Avalanche Energy|EAS    *1<br>ee<br>ee<br>ee||465<br>ee<br>ee<br>ee|
|Maximum Avalanche Energy<br>Maximum Drain-Source dV/dt|dVDS/dt*4<br>ee<br>ee<br>ee||20<br>ee<br>ee<br>eee|
|Peak Diode Recovery dV/dt|dV/dt*3<br>ee<br>ee<br>|-_-—————||5<br>ee<br>eee<br>-_-—————|
|Peak Diode Recovery dV/dt<br>Max. power  dissipation|PDTa=25<br>Tc=25<br>ee<br>|-_-—————<br>ee|Ta=25°C<br>ee <br>-_-—————|2.02<br> eee<br>-_-—————|
|||Tc=25°C<br>-_-—————<br>a <br>ee|135<br>-_-—————<br> ee<br>ee|
|Operating  and  storage<br>temperature  range|Tch<br>| -_-—————<br>ee||+150<br>-_-—————<br>ee|
||Tstg<br>ee||-55 to +150<br>ee|



## **Equivalent circuit schematic** 

*1 L=223µH, Vcc=48V      *2 Tch  150°C[<] = *3  IF   -I[<] = D, -di/dt=50A/µs, Vcc   BV[<] = DSS, Tch   150°C[<] = 

*4 VDS   100V<= *5  VGS=-30V e **Electrical characteristics (Tc =25°C  unless otherwise specified)** 

|**Item**|**Symbol**|**Min.      T**<br>**Test  Conditions**|**Min.      T**<br>**Test  Conditions**|**Min.      Typ.        Max.    Units**|**.        Max.    Units**|
|---|---|---|---|---|---|
|Drain-source  breakdown  voltaget|V(BR)DSS<br>~~a~~|ID= 250µA      VGS=0V<br>100|||V|
|Gate  threshold  voltage|VGS(th)<br>a|ID= 250µA      VDS=VGS<br>3.0<br> ~~a~~||3.0<br>5.0|V|
|Zero  gate  voltage  drain  current                I|Zero  gate  voltage  drain  current                IDSS<br>—————<br>a|VDS=100V  VGS=0V<br>VDS=80V  VGS=0V<br>T<br>T<br>—————|Tch=25°C<br>—————<br>ee|25<br>—————<br>ee<br>eee|µA<br>—————<br>ee<br>eee|
||||Tch=125°C<br>—————<br>ee<br>ee|250<br>—————<br>ee<br>ee<br>eee||
|Gate-source  leakage  current|IGSS<br>a|VGS=±30V<br>VDS=0V<br>ee||10<br>100<br>ee<br>eee|nA<br>eee|
|Drain-source  on-state  resistance|RDS(on)<br>a<br>~~Re~~|ID=25A    VGS=10V||19<br>25|mΩ|
|Forward  transcondutance<br>~~|~~|gfs<br>~~Re~~<br>~~|~~|ID=25A    VDS=25V<br>15<br>a||30<br>ee|S|
|Input  capacitance<br>~~|~~<br>**|**|Ciss<br>~~Re~~<br>~~|~~<br>**|**|VDS=75V<br>VGS=0V<br>f=1MHz<br>a<br>**a**<br>a||1830<br>2745<br>ee<br>eeee|pF<br>ee|
|Output  capacitance<br>~~|~~<br>**|**|Coss<br>~~|~~<br>**|**|||460<br>690<br>ee<br>eeee||
|Output  capacitance<br>Reverse  transfer  capacitance<br>**|**|Crss<br>**|**|||38<br>57<br>ee ee<br>ee||
|Turn-on  time  ton<br>PT|td(on)<br>~~—~~<br>Sd|VCC=48V  ID=25A<br>VGS=10V<br>RGS=10Ω<br>~~—~~<br>a<br>ee<br>Sd<br>se<br>a<br>J||20<br>30<br>ee<br>ee<br>eeeee|ns<br>ee<br>eee<br>se|
||tr<br>~~—~~<br>Sd<br>PT|||35<br>53<br>ee<br>ee<br>eeeee<br>se||
|Turn-off  time toff<br>PT|td(off)<br>~~—~~<br>Sd<br>PT|||50<br>75<br>eeeee<br>se<br>ee||
||tf<br>Sd<br>PT<br>J|||23<br>35<br>ee eee<br>se<br>ee<br>a||
|Total Gate Charge<br>PT|QG<br>PT<br>J|VCC=50V<br>ID=50A<br>VGS=10V<br>se<br>a<br>es<br>J<br>es<br>es||52<br>78<br>se<br>ee<br>es<br>a<br>es|nC<br>se<br>es<br>es<br>es<br>eee|
|Gate-Source Charge|QGS<br>J<br>a|||16<br>24<br>a<br>es<br>es<br>eeeee||
|Gate-Drain Charge|QGD<br>J<br>a|||18<br>27<br>a<br>es<br>eeeee||
|Gate-Drain Charge<br>Avalanche capability|IAV<br>a<br>~~es~~|L=100µH  Tch=25°C<br>50||ee eee|A<br>eee|
|Diode  forward  on-voltage|VSD<br>~~es~~<br>~~ee~~|IF=50A   VGS=0V   Tch=25°C<br>~~a~~<br>~~ee~~||1.10<br>1.65<br>~~ee~~|V<br>1.65|
|Reverse  recovery  time|trr<br>~~es~~<br>~~ee~~|IF=50A   VGS=0V<br>-di/dt=100A/µsTch=25°C<br>~~a~~<br>~~ee~~<br>ee||0.1<br>~~ee~~<br>~~ee~~|µs|
|Reverse  recoverycharge|Qrr<br>~~ee~~|||0.4<br>~~ee~~<br>ee<br>~~ee~~|µC<br>ee|



www.fujielectric.co.jp/denshi/scd 

1 

**2SK3586-01** 

FUJI POWER MOSFET 

## Characteristics 

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**----- Start of picture text -----**<br>
Allowable Power Dissipation<br>PD=f(Tc)<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 25 50 75 100 125 150<br>Tc [°C]<br>PD [W]<br>**----- End of picture text -----**<br>


**==> picture [220 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
Maximum Avalanche Energy vs. starting Tch<br>E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A<br>500<br>400<br>300<br>200<br>100<br>0<br>0 25 50 75 100 125 150<br> starting Tch [°C]<br> EAV [mJ]<br>**----- End of picture text -----**<br>


Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 

**==> picture [195 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>20V<br>10V<br>160<br>120<br>8V<br>80 7.5V<br>7.0V<br>6.5V<br>40<br>6.0V<br>VGS=5.5V<br>0<br>0 2 4 6 8 10 12<br>VDS [V]<br>ID [A]<br>**----- End of picture text -----**<br>


## Typical Transfer Characteristic 

ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 

**==> picture [194 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>1<br>0.1<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS[V]<br>ID[A]<br>**----- End of picture text -----**<br>


## Typical Transconductance 

Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 

gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 

**==> picture [434 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 0.15<br>VGS=<br>5.5V 6.0V 6.5V 7.0V<br>0.12<br>7.5V<br>10<br>0.09 8V<br>0.06<br>1 10V<br>0.03<br>20V<br>0.1 0.00<br>0.1 1 10 100 0 40 80 120 160 200<br>ID [A] ID [A]<br> ]<br>Ω<br>gfs [S]<br>RDS(on) [<br>**----- End of picture text -----**<br>


2 

**2SK3586-01** 

FUJI POWER MOSFET 

**==> picture [194 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Gate Threshold Voltage vs. Tch<br>VGS(th)=f(Tch):VDS=VGS,ID=250µAµAA<br>7.0<br>6.5<br>6.0<br>5.5<br>5.0 max.<br>4.5<br>4.0<br>3.5<br>3.0 min.<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tch [°C]°C]C]<br>VGS(th) [V]<br>**----- End of picture text -----**<br>


**==> picture [426 x 460] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch<br>RDS(on)=f(Tch):ID=25A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=250µAµAA<br>60 7.0<br>6.5<br>6.0<br>50<br>5.5<br>5.0 max.<br>40<br>4.5<br>4.0<br>30 max. 3.5<br>3.0 min.<br>2.5<br>20<br>typ. 2.0<br>1.5<br>10<br>1.0<br>0.5<br>0 0.0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>Tch [°C] Tch [°C]°C]C]<br>Typical Gate Charge Characteristics Typical Capacitance<br>VGS=f(Qg):ID=50A, Tch=25°C 101 C=f(VDS):VGS=0V,f=1MHz<br>14<br>12 Ciss<br>10 100<br>Vcc= 50V<br>8<br>Coss<br>6<br>10-1<br>4<br>2<br>Crss<br>0 10-2<br>0 20 40 60 80 -1 0 1 2<br>10 10 10 10<br> Qg [nC] VDS [V]<br> ]<br>Ω<br>VGS(th) [V]<br>RDS(on) [ m<br> VGS [V] C [nF]<br>**----- End of picture text -----**<br>


Typical Forward Characteristics of Reverse Diode 

Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 

IF=f(VSD):80µs Pulse test,Tch=25°C 

**==> picture [428 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 103<br>tf<br>10 102<br>td(off) tr<br>td(on)<br>1 101<br>0.10.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10010-1 100 101 102<br>VSD [V]<br>ID [A]<br>IF [A]<br>t [ns]<br>**----- End of picture text -----**<br>


3 

**2SK3586-01** 

FUJI POWER MOSFET 

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**----- Start of picture text -----**<br>
Transient Thermal Impedance<br>101 Zth(ch-c)=f(t):D=0<br>100<br>10-1<br>10-2<br>10-3<br>10-6 10-5 10-4 10-3 10-2 10-1 100<br>t [sec]<br>Zth(ch-c) [°C/W]<br>**----- End of picture text -----**<br>


**==> picture [253 x 222] intentionally omitted <==**

**----- Start of picture text -----**<br>
Maximum Avalanche Current Pulsewidth<br>2IAV=f(tAV):starting Tch=25°C. Vcc=48V<br>10<br>Single Pulse<br>101<br>100<br>10-1<br>10-2<br>10-8 10-7 10-6 10-5 10-4 10-3 10-2<br>tAV [sec]<br>  [A]<br>AV<br>Avalanche Current I<br>**----- End of picture text -----**<br>


4 



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- [Supplier page](https://es.farnell.com/en-ES/fuji-electric/2sk3586-01/mosfet-n-to-220ab/dp/1208657)
---

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