# Power MOSFET, Low Gate Drive, N Channel, 30 V, 100 mA, 13 ohm, EMT, Surface Mount ![Product image](https://novapart.co/image/farnell:1525436/) **URL**: https://novapart.co/products/2SK3019TL/power-mosfet-low-gate-drive-n-channel-30-v-100-ma **SKU**: 2SK3019TL **Manufacturer**: ROHM **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1530 **Stock**: 10+ **Lead Time**: 148 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):13ohm; Rds(on) Test ; Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (23-Jan-2024) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 150mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4V | | Transistor Case Style | EMT | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 100mA | | Drain Source On State Resistance | 13ohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1525436/) 2SK3019 ## Transistor ## 2.5V Drive Nch MOS FET ## **2SK3019** - **2SK3019** � **Structure** � **Dimensions** (Unit : mm) Silicon N-channel **EMT3** MOSFET 1.6 0.7 0.3 0.55 - (3) - � **Applications** Interfacing, switching (30V, 100mA) 0.2 (2) (1)0.2 0.15 - 0.5 0.5 1.0 - � **Features** (1)Source (2)Gate - 1) Low on-resistance. (3)Drain Abbreviated symbol : KN 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. - 4) Drive circuits can be simple. 5) Parallel use is easy. � **Packaging specifications** � **Equivalent circuit** Package Taping Drain Code TL - Type Basic ordering unit (pieces) 3000 - 2SK3019 Gate - � **Absolute maximum ratings** (Ta=25°C) ∗ Gate Protection - Parameter Symbol Limits Unit Diode Source - Drain-source voltage VDSS 30 V Gate-source voltage VGSS ± 20 V ∗ A protection diode is included between the gate Continuous ID ± 100 mA and the source terminals to protect the diode - Drain current against static electricity when the product is in use. Pulsed IDP[∗][1] ± 400 mA Use a protection circuit when the fixed voltages are exceeded. - Total power dissipation PD[∗][2] 150 mW Channel temperature Tch 150 ° C Storage temperature Tstg − 55 to + 150 ° C - ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% ∗ 2 With each pin mounted on the recommended lands. ## � **Thermal resistance** |�**Thermal resistance**|||| |---|---|---|---| |Parameter|Symbol|Limits|Unit| |Channel to ambient|Rth(ch-a)
∗|833|°C / W| - ∗ With each pin mounted on the recommended lands. Rev.C 1/3 2SK3019 Transistor ## � **Electrical characteristics** (Ta=25°C) **==> picture [513 x 587] intentionally omitted <==** **----- Start of picture text -----**
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS − − ± 1 µ A VGS =± 20V, VDS = 0V
Drain-source breakdown voltage V(BR)DSS 30 − − V ID = 10 µ A, VGS = 0V
Zero gate voltage drain current IDSS − − 1.0 µ A VDS = 30V, VGS = 0V
Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS = 3V, ID = 100 µ A
Static drain-source on-state RDS(on) − 5 8 Ω ID = 10mA, VGS = 4V
resistance RDS(on) − 7 13 Ω ID = 1mA, VGS = 2.5V
Forward transfer admittance |Yfs| 20 − − ms ID = 10mA, VDS = 3V
Input capacitance Ciss − 13 − pF VDS = 5V
Output capacitance Coss − 9 − pF VGS = 0V
Reverse transfer capacitance Crss − 4 − pF f = 1MHz
Turn-on delay time td(on) − 15 − ns ID = 10mA, VDD 5V
Rise time tr − 35 − ns VGS = 5V
Turn-off delay time td(off) − 80 − ns RL = 500 Ω
Fall time tf − 80 − ns RG = 10 Ω
� Electrical characteristic curves
0.15 4V 200m VDS = 3V 2 VDS = 3V
3V Ta = 25 ° C 100m Pulsed PulsedID = 0.1mA
Pulsed 50m
3.5V
1.5
20m
0.1
10m
5m 1
2.5V
2m Ta = 125 ° C
0.05 1m 75 ° C
2V 0.5m − 2525 °° CC 0.5
0.2m
VGS = 1.5V
00 1 2 3 4 5 0.1m0 1 2 3 4 0 − 50 − 25 0 25 50 75 100 125 150
DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch ( ° C)
Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs.
channel temperature
50 VGS = 4V 50 VGS = 2.5V 15 Ta = 25 ° C
Pulsed Ta = 125 ° C Pulsed Pulsed
20 Ta = 1257525 °°° CCC 20 − 752525 °°° CCC
10 − 25 ° C 10 10
5 5
2 2 5 ID = 0.1A
1 1 ID = 0.05A
0.5 0.5 0
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 5 10 15 20
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static drain-source on-state Fig.5 Static drain-source on-state Fig.6 Static drain-source
resistance vs. drain current ( Ι ) resistance vs. drain current ( ΙΙ ) on-state resistance vs.
gate-source voltage
New Designs
Not Recommended for
(V)
GS(th)
DRAIN CURRENT : I (A)D DRAIN CURRENT : I (A)D
GATE THRESHOLD VOLTAGE : V
) ( Ω DS(on) ) ( Ω DS(on) ) ( Ω DS(on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R
**----- End of picture text -----**
Rev.C 2/3 2SK3019 Transistor **==> picture [513 x 562] intentionally omitted <==** **----- Start of picture text -----**
9 VGS = 4V 0.5 VDS = 3V 200m VGS = 0V
8 Pulsed Pulsed 100m Pulsed
0.2
7 Ta =− 25 ° C 50m
ID = 100mA 0.1 25 ° C
654 ID = 50mA 0.020.05 12575 °° CC 20m10m5m Ta = 125 − 752525 °°°° CCCC
0.01 2m
3
1m
0.005
2 0.5m
1 0.002 0.2m
0 − 50 − 25 0 25 50 75 100 125 150 0.0010.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.1m0 0.5 1 1.5
CHANNEL TEMPERATURE : Tch ( ° C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state Fig.8 Forward transfer Fig.9 Reverse drain current vs.
resistance vs. channel admittance vs. drain current source-drain voltage ( Ι )
temperature
200m Ta = 25 ° C 50 Ta = 25 ° C 1000 tf Ta = 25 ° C
100m50m Pulsed 20 fV = GS1MH = 0VZ 500 td(off) VVRDDGSG === 105V5V Ω
Ciss 200 Pulsed
20m
10 100
10m VGS = 4V 0V
5m 5 50
Coss
tr
2m Crss 20 td(on)
1m 2
10
0.5m
1 5
0.2m
0.1m 0.5 2
0 0.5 1 1.5 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 100
SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA)
Fig.10 Reverse drain current vs. Fig.11 Typical capacitance vs. Fig.12 Switching characteristics
source-drain voltage ( ΙΙ ) drain-source voltage (See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
� Switching characteristics measurement circuit
Pulse width
90%
VGS ID VDS VGS 10%50% 50%
D.U.T. RL
RG VDS 10% 10%
VDD
90%
90%
td (on) tr tf
td (off)
ton toff
Fig.13 Switching time measurement circuit Fig.14 Switching time waveforms
New Designs
Not Recommended for
) Ω (A)
( DR
DS(on)
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
REVERSE DRAIN CURRENT : I
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R
(A)
DR
CAPACITANCE : C (pF) SWITHING TIME : t (ns)
REVERSE DRAIN CURRENT : I
**----- End of picture text -----**
Rev.C 3/3 **==> picture [527 x 796] intentionally omitted <==** **----- Start of picture text -----**
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
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R1102A
© 2013 ROHM Co., Ltd. All rights reserved.
New Designs
Not Recommended for
**----- End of picture text -----**
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