# Power MOSFET, N Channel, 1.5 kV, 2.5 A, 12 ohm, TO-3P, Through Hole ![Product image](https://novapart.co/image/farnell:1174965/) **URL**: https://novapart.co/products/2SK1317-E./power-mosfet-n-channel-15-kv-25-a-12-ohm-to-3p **SKU**: 2SK1317-E. **Manufacturer**: RENESAS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €2.1000 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | N Channel | | Power Dissipation | 100W | | Transistor Mounting | Through Hole | | Transistor Polarity | N Channel | | Power Dissipation Pd | 100W | | Rds(On) Test Voltage | 15V | | On Resistance Rds(On) | 12ohm | | Transistor Case Style | TO-3P | | Drain Source Voltage Vds | 1.5kV | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 2.5A | | Drain Source On State Resistance | 12ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1174965/) ## **2SK1317** ## Silicon N Channel MOS FET REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005 ## **Application** High speed power switching ## **Features** - High breakdown voltage VDSS = 1500 V - High speed switching - Low drive current - No secondary breakdown - Suitable for switching regulator, DC-DC converter and motor driver ## **Outline** **==> picture [350 x 134] intentionally omitted <==** **----- Start of picture text -----**
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
G 2. Drain
(Flange)
3. Source
1 S
2
3
**----- End of picture text -----**
Rev.2.00 Sep 07, 2005 page 1 of 6 **2SK1317** ## **Absolute Maximum Ratings** (Ta = 25°C) ||||(Ta = 25°C)| |---|---|---|---| |**Item**|**Symbol**|**Ratings **|**Unit**| |Drain to source voltage|VDSS|1500|V| |Gate to source voltage|VGSS|±20|V| |Drain current|ID|2.5|A| |Drainpeak current|ID(pulse)
*1|7|A| |Bodyto drain diode reverse drain current|IDR|2.5|A| |Channel dissipation|Pch*2|100|W| |Channel temperature|Tch|150|°C| |Storage temperature|Tstg|–55 to +150|°C| Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C ## **Electrical Characteristics** (Ta = 25°C) |||||||(Ta = 25°C)| |---|---|---|---|---|---|---| |**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test conditions**| |Drain to source breakdown voltage|V(BR)DSS|1500|—|—|V|ID= 10 mA, VGS= 0| |Gate to source leak current|IGSS|—|—|±1|µA|VGS=±20 V, VDS= 0| |Zerogate voltage drain current|IDSS|—|—|500|µA|VDS= 1200 V, VGS= 0| |Gate to source cutoff voltage|VGS(off)|2.0|—|4.0|V|ID= 1 mA, VDS= 10 V| |Static drain to source on state
resistance|RDS(on)|—|9|12|Ω|ID= 2 A, VGS= 15 V *3| |Forward transfer admittance||yfs||0.45|0.75|—|S|ID= 1 A, VDS= 20 V *3| |Input capacitance|Ciss|—|990|—|pF|VDS= 10 V, VGS= 0,
f = 1 MHz| |Output capacitance|Coss|—|125|—|pF|| |Reverse transfer capacitance|Crss|—|60|—|pF|| |Turn-on delaytime|td(on)|—|17|—|ns|ID= 2 A, VGS= 10 V,
RL= 15Ω| |Rise time|tr|—|70|—|ns|| |Turn-off delaytime|td(off)|—|110|—|ns|| |Fall time|tf|—|60|—|ns|| |Bodyto drain diode forward voltage|VDF|—|0.9|—|V|IF= 2 A, VGS= 0| |Body to drain diode reverse recovery
time|trr|—|1750|—|ns|IF= 2 A, VGS= 0,
diF/dt = 100 A/µs| Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 **2SK1317** ## **Main Characteristics** **==> picture [187 x 646] intentionally omitted <==** **----- Start of picture text -----**
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
5
15 V 10 V
Pulse Test 8 V
4
7 V
3
6 V
2
5 V
1
VGS = 4 V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
ID = 3 A
30
2 A
20
1 A
10
0.5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Channel Dissipation Pch (W)
(A)
D
Drain Current I
(V)
DS (on)
Drain to Source Saturation Voltage V
**----- End of picture text -----**
Maximum Safe Operation Area **==> picture [202 x 628] intentionally omitted <==** **----- Start of picture text -----**
10
3
1.0
0.3
0.1
0.03
Ta = 25°C
0.01
10 30 100 300 1,000 3,000 10,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
2.0
1.6 VDS = 20 V
Pulse Test
1.2
0.8 75°C
TC = 25°C
0.4 –25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
20
VGS = 10 V
15 V
10
5
2
Pulse Test
1.0
0.5
0.1 0.2 0.5 1.0 2 5 10
Drain Current ID (A)
Operation in this area
is limited by RDS (on)
10
µs
DC Operation (T
C
= 25°
C)
PW = 10 ms (1 Shot)
100
(A) 1 ms µs
D
Drain Current I
(A)
D
Drain Current I
)Ω
(
DS (on)
Static Drain to Source on State Resistance R
**----- End of picture text -----**
Rev.2.00 Sep 07, 2005 page 3 of 6 **2SK1317** **==> picture [220 x 659] intentionally omitted <==** **----- Start of picture text -----**
Static Drain to Source on State
Resistance vs. Temperature
20
ID = 2 A
VGS = 15 V
16 Pulse Test
0.5 A, 1 A
12
8
4
0
–40 0 40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
1,000
500
200 di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
100
50
0.05 0.1 0.2 0.5 1.0 2 5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
1,000 20
VDD = 250 V
800 400 V 16
600 V
600 VGS 12
VDS
400 8
VDD = 600 V
200 400 V 4
250 V ID = 2.5 A
0
0 20 40 60 80 100
Gate Charge Qg (nc)
)Ω
(
DS (on)
Static Drain to Source on State Resistance R
Reverse Recovery Time trr (ns)
(A) (V)
DS GS
Drain to Source Voltage V Gate to Source Voltage V
**----- End of picture text -----**
**==> picture [184 x 657] intentionally omitted <==** **----- Start of picture text -----**
Forward Transfer Admittance
vs. Drain Current
10
VDS = 20 V
5 Pulse Test
2 –25°C
Ta = 25°C
1.0 75°C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2 5
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
10,000
VGS = 0
f = 1 MHz
Ciss
1,000
100 Coss
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
1,000
VGS = 10 V VDD = 30 V• •
500 PW = 2 µs, duty < 1%
t
d (off)
200
100
tf
50
tr
20 td (on)
10
0.05 0.1 0.2 0.5 1.0 2 5
Drain Current ID (A)
(S)

yfs

Forward Transfer Admittance
Capacitance C (pF)
Switching Time t (ns)
**----- End of picture text -----**
Rev.2.00 Sep 07, 2005 page 4 of 6 **2SK1317** Reverse Drain Current vs. Source to Drain Voltage **==> picture [182 x 177] intentionally omitted <==** **----- Start of picture text -----**
5
Pulse Test
4
3
2
1
10 V, 15 V
VGS = 0, –5 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
(A)
DR
Reverse Drain Current I
**----- End of picture text -----**
**==> picture [388 x 199] intentionally omitted <==** **----- Start of picture text -----**
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
1.0
0.5
0.3 0.2
θch–c (t) = γS (t) • θch–c
0.1 θch–c = 1.25°C/W, TC = 25°C
PDM
PW
0.03 D =
T
PW
T
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
Pulse Width PW (S)
0.1
0.05
0.02
1 Shot Pulse0.01
(t)
S
γ
Normalized Transient Thermal Impedance
**----- End of picture text -----**
**==> picture [421 x 128] intentionally omitted <==** **----- Start of picture text -----**
Switching Time Test Circuit Waveforms
Vin Monitor 90%
Vout Monitor
Vin
10%
D.U.T
RL Vout 10% 10%
50 Ω
Vin VDD 90% 90%
10 V = 30 V td (on) t r td (off) t f
**----- End of picture text -----**
Rev.2.00 Sep 07, 2005 page 5 of 6 **2SK1317** ## **Package Dimensions** **==> picture [482 x 322] intentionally omitted <==** **----- Start of picture text -----**
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g
Unit: mm
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5
1.6
1.4 Max 2.0
2.8
1.0 ± 0.2 0.6 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5 5.45 ± 0.5
1.0 5.0 ± 0.3
0.5
19.9 ± 0.2
14.9 ± 0.2
2.0 0.3
18.0 ± 0.5
**----- End of picture text -----**
## **Ordering Information** |**Part Name**|**Quantity**|**Shipping Container**| |---|---|---| |2SK1317-E|360pcs|Box(Tube)| Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan - Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. - Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. - Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. - Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. ## **RENESAS SALES OFFICES** http://www.renesas.com Refer to " **http://www.renesas.com/en/network** " for the latest and detailed information. ## **Renesas Technology America, Inc.** 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 ## **Renesas Technology Europe Limited** Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 ## **Renesas Technology Hong Kong Ltd.** 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 ## **Renesas Technology Taiwan Co., Ltd.** 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 ## **Renesas Technology (Shanghai) Co., Ltd.** Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 ## **Renesas Technology Singapore Pte. Ltd.** 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 ## **Renesas Technology Korea Co., Ltd.** Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 ## **Renesas Technology Malaysia Sdn. Bhd.** Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 **==> picture [468 x 77] intentionally omitted <==** © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. 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