# Bipolar (BJT) Single Transistor, NPN, 30 V, 3 A, 12.5 W, SOT-32, Through Hole

![Product image](https://novapart.co/image/farnell:1749417/)

**URL**: https://novapart.co/products/2SD882/bipolar-bjt-single-transistor-npn-30-v-3-a-125-w
**SKU**: 2SD882
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.2600
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:12.5W; DC Collector Current:3A; DC Current Gain hFE:100hFE; Transistor C

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 12.5W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 100MHz |
| Transistor Case Style | SOT-32 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1749417/)

**2SD882** 

NPN medium power transistor 

**==> picture [61 x 39] intentionally omitted <==**

## **Features** 

- High current 

- Low saturation voltage 

- Complement to 2SB772 

## **Applications** 

- Voltage regulation 

- Relay driver 

- Generic switch 

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1<br>3 [2]<br> SOT-32<br>(TO-126)<br>**----- End of picture text -----**<br>


- Audio power amplifier 

- DC-DC converter 

## **Description** 

The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. 

## **Figure 1. Internal schematic diagram** 

**==> picture [112 x 144] intentionally omitted <==**

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|2SD882|D882|SOT-32|Tube|



October 2007 

1/8 

Rev 3 

_www.st.com_ 

**2SD882** 

**Absolute maximum ratings** 

## **1 Absolute maximum ratings** 

## **Table 2. Absolute maximum rating** 

|**Table 2.**|**Absolute maximum rating**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCBO|Collector-base voltage (IE= 0)|60|V|
|VCEO|Collector-emitter voltage (IB= 0)|30|V|
|VEBO|Collector-base voltage (IC= 0)|5|V|
|IC|Collector current|3|A|
|ICM|Collector peak current (tP< 5ms)|6|A|
|IB|Base current|1|A|
|IBM|Base peak current (tP< 5ms)|2|A|
|PTOT|Total dissipation at Tc= 25°C|12.5|W|
|TSTG|Storage temperature|-65 to 150|°C|
|TJ|Max. operating junction temperature|150|°C|



## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJ-case|Thermal resistance junction-case max|10|°C/W|



2/8 

**2SD882** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25°C; unless otherwise specified) 

## **Table 4. Electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector cut-off current<br>(VBE= 0)|VCE= 60 V|||10|µA|
|ICEO|Collector cut-off current<br>(IB= 0)|VCE= 30 V|||100|µA|
|IEBO|Emitter cut-off current<br>(IC= 0)|VEB= 5 V|||10|µA|
|V(BR)CEO<br>(1)|Collector-emitter breakdown<br>voltage<br>(IB= 0 )|IC= 10 mA|30|||V|
|V(BR)CBO|Collector-base breakdown<br>voltage<br>(IE= 0 )|IC= 100 µA|60|||V|
|V(BR)EBO|Emitter-base breakdown<br>voltage<br>(IC= 0 )|IE= 100 µA|5|||V|
|VCE(sat)<br>(1)|Collector-emitter saturation<br>voltage|IC= 1 A                IB= 50 mA<br>IC= 2 A              IB= 100 mA<br>IC= 3 A              IB= 150 mA|||0.4<br>0.7<br>1.1|V<br>V<br>V|
|VBE(sat)<br>(1)|Base-emitter saturation<br>voltage|IC= 2 A              IB= 100 mA|||1.2|V|
|hFE|DC current gain|IC= 100 mA          VCE= 2 V<br>IC= 1 A                  VCE= 2 V<br>IC= 3 A                  VCE= 2 V|100<br>80<br>30||300||
|fT|Transition frequency|IC= 0.1 A            VCE= 10 V||100||MHz|



1. Pulsed duration = 300 ms, duty cycle ≤1.5%. 

3/8 

**2SD882** 

**Electrical characteristics** 

## **2.1 Typical characteristics (curves)** 

## **Figure 2. Reverse biased safe operating area Figure 3. DC current gain** 

**==> picture [173 x 163] intentionally omitted <==**

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## **Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage** 

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4/8 

**2SD882** 

**Package mechanical data** 

## **3 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 

5/8 

**2SD882** 

**Package mechanical data** 

## **SOT-32 (TO-126) mechanical data** 

|**SOT-32 (TO-126) mechanical data**|**SOT-32 (TO-126) mechanical data**|**SOT-32 (TO-126) mechanical data**|**SOT-32 (TO-126) mechanical data**|
|---|---|---|---|
|||||
|||||
|**DIM.**|**mm.**|||
||**MIN.**|**TYP**|**MAX.**|
|A|2.4||2.9|
|B|0.64||0.88|
|B1|0.39||0.63|
|D|10.5||11.05|
|E|7.4||7.8|
|e|2.04|2.29|2.54|
|e1|4.07|4.58|5.08|
|L|15.3||16|
|P|2.9||3.2|
|Q|3.8|||
|Q1|1||1.52|
|H2||2.15||
|I|1.27|||
|||||



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0016114E<br>**----- End of picture text -----**<br>


6/8 

**2SD882** 

**Revision history** 

## **4 Revision history** 

## **Table 5. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Sep-2005|2|Final datasheet. New template|
|02-Oct-2007|3|Updated mechanical data|



7/8 

**2SD882** 

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8/8 



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