# Bipolar (BJT) Single Transistor, NPN, 20 V, 300 mA, 200 mW, SOT-346, Surface Mount
**URL**: https://novapart.co/products/2SD2704KT146/bipolar-bjt-single-transistor-npn-20-v-300-ma-200
**SKU**: 2SD2704KT146
**Manufacturer**: ROHM
**Price**: €0.0640
**Stock**: 1000+
**Lead Time**: 113 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:35MHz; Power Dissipation Pd:200mW; DC Collector Current:30mA; DC Current Gain hFE:820hFE; Transistor Case Style
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 35MHz |
| Transistor Case Style | SOT-346 |
| Dc Current Gain Hfe Min | 820hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 300mA |
| Collector Emitter Voltage Max | 20V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1680164/)
## For Muting (20V, 0.3A)
## **2SD2704K**
## **Features**
- 1) High DC current gain.
- hFE = 820 to 2700
- 2) High emitter-base voltage. VEBO = 25V (Min.)
- 3) Low Ron
Ron= 0.7 (Typ.)
## **Structure**
Epitaxial planar type NPN silicon transistor
## **Dimensions** (Unit : mm)
**==> picture [265 x 148] intentionally omitted <==**
**----- Start of picture text -----**
2SD2704K
SOT-346 2.9 1.1
0.4 0.8
(3)
|
(2) (1)
0.95 0.95 (1) Emitter
0.15 (2) Base
—_— 1.9 ! (3) Collector
ROHM : SMT3 Each lead has same dimensions
EIAJ : SC-59
Abbreviated symbol : XL
1.6 2.8
0.3Min.
**----- End of picture text -----**
**Packaging specifications** Package Taping Code T146 Basic ordering 3000 Type unit (pieces) 2SD2704K ~~Ee~~
## **Absolute maximum ratings** (Ta=25C)
|Parameter|Symbol|Limits|Unit|
|---|---|---|---|
|Collector-base voltage|VCBO|50|V|
|Collector-emitter voltage|VCEO|20|V|
|Emitter-base voltage|VEBO|25|V|
|Collector current|IC|0.3|A|
|Collector power dissipation|PC|0.2|W|
|Junction temperature|Tj|150|°C|
|Storage temperature|Tstg|−55 to+150|°C|
## **Electrical characteristics** (Ta=25C)
|**Electrical characteristics**(Ta=25C)|(Ta=25C)C)C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol
ee|Min.
ee|Typ.
ee|Max.
ee|Unit
ee|Conditions|
|Collector-base breakdown voltage|BVCBO
PTT
Pt|50
PTT
PtET|−
PTT
ET|−
PTT
ET|V
PTT
ET|IC=10μA|
|Collector-emitter breakdown voltage|BVCEO
Pt|20
PtET|−
ET|−
ET|V
ET|IC=1mA|
|Emitter-base breakdown voltage|BVEBO
Pt
a
Ft|25
Pt ET
a
FtET|−
ET
a
ET|−
ET
a
ET|V
ET
a
ET|IE=10μA|
|Collector cutoff current|ICBO
Ft
Pt|−
FtET
PtET|−
ET
ET|0.1
ET
ET|μA
ET
ET|VCB=50V|
|Emitter cutoff current|IEBO
Ft
Pt
Ft|−
Ft ET
PtET
FtET|−
ET
ET
ET|0.1
ET
ET
ET|μA
ET
ET
ET|VEB=25V|
|Collector-emitter saturation voltage|VCE(sat)
Pt
Ft|−
Pt ET
FtET|50
ET
ET|100
ET
ET|mV
ET
ET|IC/IB=30mA/3mA|
|DC current transfer ratio|hFE
Ft
a|820
Ft ET
aee|−
ET
ee|2700
ET
ee|−
ET
ee|VCE=2V, IC=4mA|
|Transition frequency|fT∗
a|−|35
ee|−
ee|MHz
ee|VCE=6V, IE= −4mA, f=10MHz|
|Output capacitance|Cob
PTT|−
PTT|3.9
PTT|−
PTT|pF
PTT|VCB=10V, IE=0A, f=1MHz|
|Output On-resistance|Ron
ee|−
ee|0.7
ee|−
ee|Ω
ee|IB=5mA, Vi=100mV(rms), f=1kHz|
∗[ Measured using pulse current]
www.rohm.com
**2012.01 - Rev.C**
1/3
○c 2012 ROHM Co., Ltd. All rights reserved.
**2SD2704K**
Data Sheet
## **Electrical characteristic curves**
**==> picture [483 x 527] intentionally omitted <==**
**----- Start of picture text -----**
1000 VCE = 2V 1000 VCE = 6V 10000 VCE = 2V
Ta = 125 ° C
Ta = 125 ° C Ta = 125 ° C
100 100
25 ° C 25 ° C 1000
Ta = 25 ° C
10 − 40 ° C 10 − 40 ° C Ta = − 40 ° C
100
0.1 0.1
0.1 0.1 10
0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1 10 100 1000
BASE TO EMITTER VOLTAGE : VBE(ON) (V) BASE TO EMITTER VOLTAGE : VBE(ON) (V) COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation Fig.2 Grounded emitter propagation Fig.3 DC current gain
characteristics ( Ι ) characteristics ( ΙΙ ) vs. collector current ( )
10000 10000 10000
VCE = 6V IC/IB = 10/1 IC/IB = 20/1
Ta = 125 ° C
1000 1000
1000
Ta = 25 ° C
Ta = − 40 ° C 100 Ta = 125 ° C 100 Ta = 125 ° C
100 Ta = 25 ° C Ta = 25 ° C
10 10
Ta = − 40 ° C Ta = − 40 ° C
10 1 1
1 10 100 1000 1 10 100 1000 1 10 100 1000
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. collector current ( ) vs. collector current ( ) vs. collector current ( )
10000 10000 10000
IC/IB = 50/1 I C /I B = 10/1 I C /I B = 20/1
1000
Ta = 125 ° C
Ta = − 40 ° C Ta = − 40 ° C
100 1000 1000
Ta = 25 ° C Ta = 25 ° C Ta = 25 ° C
10 Ta = − 40 ° C Ta = 125 ° C Ta = 125 ° C
1 100 100
1 10 100 1000 1 10 100 1000 1 10 100 1000
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage Fig.8 Base-emitter saturation voltage Fig.9 Base-emitter saturation voltage
vs. collector current ( ) vs. collector current ( ) vs. collector current ( )
(mA)COLLECTOR CURRENT : IC (mA)COLLECTOR CURRENT : IC DC CURRENT GAIN : hFE
(mV) (mV)
CE(sat) CE(sat)
FE
DC CURRENT GAIN : h
COLLECTOR SATURATION VOLTAGE : V COLLECTOR SATURATION VOLTAGE : V
(mV) (mV) (mV)
CE(sat) BE(sat) BE(sat)
COLLECTOR SATURATION VOLTAGE : V BASE SATURATION VOLTAGE : V BASE SATURATION VOLTAGE : V
**----- End of picture text -----**
Fig.6 Collector-emitter saturation voltage vs. collector current ( )
www.rohm.com
**2012.01 - Rev.C**
2/3
○c 2012 ROHM Co., Ltd. All rights reserved.
**2SD2704K**
Data Sheet
**==> picture [481 x 350] intentionally omitted <==**
**----- Start of picture text -----**
10000 I C /I B = 50/1 10000 Ta = 25 ° C 100 Ta = 25 ° C
f = 50MHz f = 1MHz
IE = 0A I E = 0A
10
1000 Ta = − 40 ° C
1
Ta = 25 ° C
Ta = 125 ° C
100 1 0.1
1 10 100 1000 1 10 100 1 10 100
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) EMITTER TO BASE VOLTAGE : V COLLECTOR TO BASE VOLTAGE : VEB (V)CB (V)
Fig.10 Base-emitter saturation voltage Fig.11 Gain bandwidth product Fig.12 Collector output capacitance
vs. collector current ( ) vs. emitter current vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
100 Ta = 25 ° C 100 Ta = 25 ° C
10 10
1 1
0.1 See Fig.15 0.1 See Fig.16
0.01 0.1 1 10 100 0.01 0.1 1 10 100
BASE CURRENT : IB (mA) BASE CURRENT : IB (mA)
Fig.13 Output-on resistance vs. base current ( ) Fig.14 Output-on resistance vs. base current ( )
(mV) (pF)
BE(sat) (MHz) (pF)
T
TRANSITION FREQUENCY : f
BASE SATURATION VOLTAGE : V COLLECTOR OUTPUT CAPACITANCE : Cob EMITTER INPUT CAPACITANCE : Cib
)( Ω ON RESISTANCE : Ron )( Ω ON RESISTANCE : Ron
**----- End of picture text -----**
## **Ron measurement circuit**
**==> picture [389 x 118] intentionally omitted <==**
**----- Start of picture text -----**
RL = 1k Ω RL = 1k Ω
InputVi V Outputv0 InputVi V Outputv0
100mV(rms) 100mV(rms)
1V(rms) IB 1V(rms) IB
f=1kHz f=1kHz
v0 v0
Ron = vi − v0 × RL Ron = vi − v0 × RL
Fig.15 Ron measurement circuit ( ) Fig.16 Ron measurement circuit ( )
**----- End of picture text -----**
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved.
**2012.01 - Rev.C**
3/3
Notice
## **N o t e s**
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
**==> picture [80 x 61] intentionally omitted <==**
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## ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
R1120A
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