# Bipolar (BJT) Single Transistor, NPN, 30 V, 1 A, 200 mW, SOT-346, Surface Mount

![Product image](https://novapart.co/image/farnell:1680163/)

**URL**: https://novapart.co/products/2SD2657KT146/bipolar-bjt-single-transistor-npn-30-v-1-a-200-mw
**SKU**: 2SD2657KT146
**Manufacturer**: ROHM
**Price**: €0.1390
**Stock**: 10+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:330MHz; Power Dissipation Pd:200mW; DC Collector Current:1A; DC Current Gain hFE:270hFE; Transistor C

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 330MHz |
| Transistor Case Style | SOT-346 |
| Dc Current Gain Hfe Min | 270hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1680163/)

2SD2657K 

## Low frequency amplifier 

## **2SD2657K** 

**! Application** 

Low frequency amplifier Driver 

## **! Features** 

1) A collector current is large. 

2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA 

## **! External dimensions** (Units : mm) 

**==> picture [190 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>2.8<br>0.3Min.<br>Each lead has same dimensions<br>ROHM : SMT3 Abbreviated symbol : FZ (1) Emitter<br>EIAJ : SC-59 (2) Base<br>JEDEC : SOT-346 (3) Collector<br>(1)<br>0.95<br>1.9 2.9<br>0.4 (3) (2) 0.95<br>0.15 0.8 1.1<br>0~0.1<br>**----- End of picture text -----**<br>


## **! Absolute maximum ratings** (Ta=25 ° C) 

|Parameter|Symbol|Limits|Unit|
|---|---|---|---|
|Collector-base voltage|VCBO|30|V|
|Collector-emitter voltage|VCEO|30|V|
|<br>Emitter-base voltage|VEBO|6|V|
|Collector current|IC|1.5|A|
||ICP|3|∗<br>A|
|Power dissipation|PC|200|mW|
|<br>Junction temperature|Tj|150|°C|
|Range of storage temperature|Tstg|−55~+150|°C|



## **! Packaging specifications** 

|Type|Package|Taping|
|---|---|---|
||Code|T146|
||Basic ordering unit (pieces)|3000|
|2SD2657K|||



- ∗ Single pulse, PW = 1ms 

## **! Electrical characteristics** (Ta=25 ° C) 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Collector-base breakdown voltage|BVCBO|30|−|−|V|IC=10µA|
|Collector-emitter breakdown voltage|BVCEO|30|−|−|V|IC=1mA|
|Emitter-base breakdown voltage|BVEBO|6|−|−|V|IE=10µA|
|Collector cutoff current|ICBO|−|−|100|nA|VCB=30V|
|Emitter cutoff current|IEBO|−|−|100|nA|VEB=6V|
|Collector-emitter saturation voltage|VCE(sat)|−|160|350|mV|IC=1A, IB=50mA|
|DC current gain|hFE|270|−|680|−|VCE=2V, IC=100mA<br>∗|
|Transition frequency|fT|−|330|−|MHz|VCE=2V, IE=−100mA, f=100MHz<br>∗|
|Corrector output capacitance|Cob|−|11|−|pF|VCB=10V, IE=0A, f=1MHz|



- ∗ Pulsed 

1/2 

2SD2657K 

**==> picture [132 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
! Electrical characteristic curves<br>**----- End of picture text -----**<br>


**==> picture [433 x 574] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 VCE = 2V 10 IC/IB = 20 /1 1 Ta = 25 ° C<br>Ta = 100 ° C Pulsed Pulsed Pulsed<br>Ta = 25 ° C VBE(sat) TaTaTa =−= 100 = 4025 °°° CCC<br>Ta =− 40 ° C 1<br>100 0.1<br>0.1 Ta = 100 ° C IC/IB = 50/1<br>VCE(sat) Ta = 25 ° C IC/IB = 20/1<br>Ta =− 40 ° C IC/IB = 10/1<br>10 0.01 0.01<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>COLLECTOR  CURRENT : IC (A) COLLECTOR  CURRENT : IC (A) COLLECTOR  CURRENT : IC (A)<br>Fig.1  DC current gain  Fig.2  Collector-emitter saturation voltage Fig.3  Collector-emitter saturation voltage<br>vs. collector current base-emitter saturation voltage vs. collector current<br>vs. collector current<br>1 VCE = 2V 1000 Ta = 25 ° C 1000 Ta = 25 ° C<br>Pulsed VCE = 2V VCE = 5V<br>f = 100MHz tstg f = 100MHz<br>0.1 Ta = 100 ° C Ta = 25 ° C 100<br>Ta =− 40 ° C tf<br>100<br>tdon<br>0.01 10<br>tr<br>0.001 10 1<br>0 0.5 1 1.5 0.01 0.1 1 10 0.01 0.1 1 10<br>BASE  TO  EMITTER  CURRENT : VBE (V) EMITTER  CURRENT : IE (A) COLLECTOR  CURRENT : IC (A)<br>Fig.4  Grounded emitter propagation Fig.5  Gain bandwidth product Fig.6  Switching time<br>characteristics vs. emitter current<br>1000 10<br>Ta = 25 ° C<br>IC = 0A<br>f = 1MHz<br>1<br>100 Cib<br>0.1<br>Cob<br>10<br>0.01<br>Ta = 25 ° C<br>1 0.001 Single Pulse<br>0.1 1 10 100 0.1 1 10 100<br>EMITTER  TO  BASE  VOLTAGE : VCOLLECTOR TO BASE VOLTAGE : VEB(CBV)(V) COLLECTOR  TO  EMITTER  VOLTAGE : VCE (V)<br>Fig.7  Collector output capacitance Fig.8  Safe Operating Area<br>vs. collector-base voltage<br>Emitter input capacitance<br>vs. emitter-base voltage<br>PW = 100ms<br>DC Operation<br>1ms<br>10ms<br>(V) (V)<br>(V) CE (sat)  CE(sat)<br>FE<br>BE (sat)<br>DC  CURRENT  GAIN : h<br>BASE  SATURATION  VOLTAGE : V<br>COLLECTOR  SATURATION  VOLTAGE : V COLLECTOR SATURATION VOLTAGE : V<br>(A)C  (MHz)T  SWITCHING  TIME : (ns)<br>COLLECTOR  CURRENT : I TRANSITION FREQUENCY : f<br>COLLECTOR  CURRENT : I (A)C<br>EMITTER INPUT CAPACITANCE : Cib (pF)<br>COLLECTOR OUTPUT CAPACITANCE : Cob (pF)<br>**----- End of picture text -----**<br>


2/2 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. 

Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. 

Products listed in this document use silicon as a basic material. 

Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). 

Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.0 



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