# Bipolar (BJT) Single Transistor, NPN, 20 V, 500 mA, 200 mW, SOT-346, Surface Mount

![Product image](https://novapart.co/image/farnell:1680156/)

**URL**: https://novapart.co/products/2SD2114KT146V/bipolar-bjt-single-transistor-npn-20-v-500-ma-200
**SKU**: 2SD2114KT146V
**Manufacturer**: ROHM
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:350MHz; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:820hFE; Transistor Case Style:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 350MHz |
| Transistor Case Style | SOT-346 |
| Dc Current Gain Hfe Min | 820hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 20V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1680156/)

Datasheet 

High-current Gain Medium Power Transistor (20V, 500mA) 

## 2SD2114K 

## **l Outline** 

|Parameter|Value|
|---|---|
|VCEO|20V|
|IC|0.5A|



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**----- Start of picture text -----**<br>
 SMT3<br>(3)<br>(2)<br>(1)<br>SOT-346<br>SC-59<br>**----- End of picture text -----**<br>


## **l Features** 

1)High DC current gain 

## **l Inner circuit** 

- 2)High emitter-base voltage. 

VEBO=12V 

- 3)Low VCE(sat). 

VCE(sat)=180mV(Typ.) 

- (IC/IB=500mA/20mA) 

## **l Application** 

LOW FREQUENCY AMPLIFIER, MUTING, DC-DC CONVERTER 

## **l Packaging specifications** 

|Part No.|Package|Package<br>size|Taping<br>code|Reel size<br>(mm)|Tape width<br>(mm)|Basic<br>ordering<br>unit.(pcs)|Marking|
|---|---|---|---|---|---|---|---|
|2SD2114K|SMT3|2928|T146|180|8|3000|BB|



www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**2SD2114K** 

Datasheet 

## **l Absolute maximum ratings** (Ta = 25°C) 

|**lAbsolute maximum ratings**(Ta = 25°C)a = 25°C)= 25°C)||||
|---|---|---|---|
|Parameter|Symbol<br>~~a~~|Values|Unit|
|Collector-base voltage|VCBO<br>~~a~~|25|V|
|Collector-emitter voltage|VCEO<br>~~a~~|20|V|
|Emitter-base voltage|VEBO<br>~~a~~|12|V|
|Collector current|IC<br>~~a~~|0.5<br>|A|
||ICP*1<br>~~pf~~|1.0<br>~~pf~~|A|
|Power dissipation|PD*2<br>~~a~~|200|mW|
|Junction temperature|Tj<br>~~a~~|150|℃|
|Range of storage temperature|Tstg<br>~~a~~|-55 to +150|℃|



## **l Electrical characteristics** (Ta = 25°C) 

|**lElectrical characteristics** (Ta = 25°C)Ta = 25°C)a = 25°C)= 25°C)|(Ta = 25°C)Ta = 25°C)a = 25°C)= 25°C))||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions<br>~~**|**~~|Values<br>~~ee~~<br>~~**|**~~|||Unit|
||||Min.<br>~~**|**~~|Typ.|Max.||
|Collector-base breakdown<br>voltage|BVCBO|IC= 10μA<br>~~**|**~~|25<br>~~**|**~~|-|-|V|
|Collector-emitter breakdown<br>voltage|BVCEO<br>~~a~~|IC= 1mA<br>~~ee~~|20<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V|
|Emitter-base breakdown voltage|BVEBO<br>~~a~~<br>~~ae~~<br>~~a~~|IE= 10μA<br>~~ee~~<br>~~ee~~<br>|12<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|V<br>~~ee~~|
|Collector cut-off current|ICBO<br>~~a~~<br>~~ae~~<br>~~a~~<br>~~a~~|VCB= 20V<br>~~ee~~<br>~~ee~~<br><br>|-<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|500<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>|nA<br>~~ee~~|
|Emitter cut-off current|IEBO<br>~~ae~~<br>~~a~~<br>~~a~~<br>~~a~~|VEB= 10V<br>~~ee~~<br>~~ee~~<br><br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|500<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|nA<br>~~ee~~|
|Collector-emitter saturation voltage|VCE(sat) <br>~~a ee~~<br>~~a~~|IC= 500mA, IB= 20mA<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|180<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|400<br>~~ee~~<br>~~ee~~<br>|mV|
|DC currentgain|hFE<br>~~a ee~~|VCE= 3V, IC= 10mA<br>~~ee~~|820<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|2700<br>~~ee~~<br>~~ee~~|-|
|Transition frequency|fT|VCE= 10V, IE= -50mA,<br>f = 100MHz|-<br>~~ee~~|350<br>~~ee~~|-|MHz|
|Output capacitance|Cob|VCB= 10V, IE= 0A,<br>f = 1MHz|-|8.0|-|pF|
|On resistance|Ron|Vi= 100mVrms,<br>IB= 1mA, f = 1kHz<br>(See test circuit)|-|0.8|-|Ω|



## hFE values are calssified as follows : 

|rank|V|W|-|-|-|
|---|---|---|---|---|---|
|hFE|820-1800|1200-2700|-|-|-|



- *1 Pw=10ms Single Pulse 

- *2 Each terminal mounted on a reference land. 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

2/6 

**2SD2114K** 

Datasheet 

## **l Electrical characteristic curves** (Ta = 25°C) 

Fig.1 Ground Emitter Propagation 

## Fig.2 Typical Output Characteristics 

Characteristics 

Fig.3 DC Current Gain vs. Collector Current (I) 

Fig.4 DC Current Gain vs. Collector Current (II) 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

3/6 

**2SD2114K** 

Datasheet 

## **l Electrical characteristic curves** (Ta = 25°C) 

Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I) 

Fig.7 Base-Emitter Saturation Voltage vs. Collector Current 

Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II) 

Fig.8 Gain Bandwidth Product vs. Emitter Current 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

4/6 

**2SD2114K** 

Datasheet 

## **l Electrical characteristic curves** (Ta = 25°C) 

Fig.9 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage 

Fig.10 'ON' Resistance vs. Base Current 

Ron MEASUREMENT CIRCUIT 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**2SD2114K** 

Datasheet 

## **l Dimensions** 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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Notice 

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Notes<br>1) The information contained herein is subject to change without notice.<br>2) Before you use our Products, please contact our sales representative and verify the latest specifica-<br>tions:<br>3) Although ROHM is continuously working to improve product reliability and quality, semicon-<br>ductors can break down and malfunction due to various factors.<br>Therefore, in order to prevent personal injury or fire arising from failure, please take safety<br>measures such as complying with the derating characteristics, implementing redundant and<br>fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no<br>responsibility for any damages arising out of the use of our Poducts beyond the rating specified<br>by ROHM.<br>4) Examples of application circuits, circuit constants and any other information contained herein are<br>provided only to illustrate the standard usage and operations of the Products. The peripheral<br>conditions must be taken into account when designing circuits for mass production.<br>5) The technical information specified herein is intended only to show the typical functions of and<br>examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,<br>any license to use or exercise intellectual property or other rights held by ROHM or any other<br>parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of<br>such technical information.<br>6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-<br>cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in<br>this document.<br>7) The Products specified in this document are not designed to be radiation tolerant.<br>8) For use of our Products in applications requiring a high degree of reliability (as exemplified<br>below), please contact and consult with a ROHM representative : transportation equipment (i.e.<br>cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety<br>equipment, medical systems, servers, solar cells, and power transmission systems.<br>9) Do not use our Products in applications requiring extremely high reliability, such as aerospace<br>equipment, nuclear power control systems, and submarine repeaters.<br>10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with<br>the recommended usage conditions and specifications contained herein.<br>11) ROHM has used reasonable care to ensur the accuracy of the information contained in this<br>document. However, ROHM does not warrants that such information is error-free, and ROHM<br>shall have no responsibility for any damages arising from any inaccuracy or misprint of such<br>information.<br>12) Please use the Products in accordance with any applicable environmental laws and regulations,<br>such as the RoHS Directive. For more details, including RoHS compatibility, please contact a<br>ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting<br>non-compliance with any applicable laws or regulations.<br>13) When providing our Products and technologies contained in this document to other countries,<br>you must abide by the procedures and provisions stipulated in all applicable export laws and<br>regulations, including without limitation the US Export Administration Regulations and the Foreign<br>Exchange and Foreign Trade Act.<br>14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of<br>ROHM.<br>**----- End of picture text -----**<br>


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www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 

R1102A 

**Datasheet** 

## 2SD2114K - Web Page 

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|Part Number|2SD2114K|
|---|---|
|Package|SMT3HP|
|Unit Quantity|3000|
|Minimum Package Quantity|3000|
|Packing Type|Taping|
|Constitution Materials List|inquiry|
|RoHS|Yes|





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- [Supplier page](https://es.farnell.com/rohm/2sd2114kt146v/transistor-smt3/dp/1680156)
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