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2SC5706-E

Bipolar (BJT) Single Transistor, NPN, 50 V, 5 A, 15 W, TO-251, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:400MHz; Power Dissipation Pd:15W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Tran
  • MSL: -
  • SVHC: No SVHC (15-Jan-2018)
  • No. of Pins: 4Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 15W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: NPN
  • Transition Frequency: 400MHz
  • Transistor Case Style: TO-251
  • DC Current Gain hFE Min: 200hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 5A
  • Collector Emitter Voltage Max: 50V
Delivery and price
Units per pack 1
Price 1.3 €
Current stock 500+
Lead time 7 days
PDF File icon Datasheet

Updated at March 14, 2026