# Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3872207/)

**URL**: https://novapart.co/products/2SC4116-GR,LF(T/bipolar-bjt-single-transistor-npn-50-v-150-ma-200
**SKU**: 2SC4116-GR,LF(T
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0230
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 80MHz |
| Transistor Case Style | SOT-323 |
| Dc Current Gain Hfe Min | 70hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 150mA |
| Collector Emitter Voltage Max | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3872207/)

2SC4116 

Bipolar Transistors Silicon NPN Epitaxial Type 

## 2SC4116 

## 1. Applications 

- Low-Frequency Amplifiers 

- Audio Frequency General Purpose Amplifier Applications 

- AM Amplifiers 

## 2. Features 

- (1) AEC-Q101 qualified (Please see the orderable part number list) 

- (2) High voltage:  VCEO = 50 V 

- (3) High collector current: IC = 150 mA (max) 

- (4) High hFE: hFE = 70 to 700 

- (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 

- (6) Low noise: NF = 1 dB (typ.), 10 dB (max) 

- (7) Complementary to 2SA1586 

- (8) Small package 

## 3. Packaging 

**==> picture [154 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
1: Base<br>2: Emitter<br>3: Collector<br>USM<br>**----- End of picture text -----**<br>


Start of commercial production 1987-01 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-06-30 Rev.6.0 

1 

2SC4116 

4. Orderable part number 

|Orderable part number<br>~~ll;~~<br>~~a~~|Orderable part number<br>~~ll;~~<br>~~a~~|AEC-Q101<br>~~ll;~~<br>~~ccltl~~|Note<br>~~ll;~~<br>~~ltl~~|
|---|---|---|---|
|2SC4116-O|2SC4116-O,LF<br>~~a~~|~~ccltl~~|General Use<br>~~ltl~~|
||2SC4116-O,LXGF<br>~~Ge~~|YES<br>(Note 1)<br>~~Ge~~|Unintended Use<br>(Note 1)<br>~~Ge~~|
||2SC4116-O,LXHF<br>~~se~~|YES<br>~~se~~|Automotive Use<br>~~se~~|
|2SC4116-Y|2SC4116-Y,LF<br>~~Ge~~|~~Ge~~|General Use<br>~~Ge~~|
||2SC4116-Y,LXGF<br>~~Ge~~|YES<br>(Note 1)<br>~~Ge~~|Unintended Use<br>(Note 1)<br>~~Ge~~|
||2SC4116-Y,LXHF<br>~~se~~|YES<br>~~se~~|Automotive Use<br>~~se~~|
|2SC4116-GR|2SC4116-GR,LF<br>~~Ge~~|~~Ge~~|General Use<br>~~Ge~~|
||2SC4116-GR,LXGF<br>~~Ge~~|YES<br>(Note 1)<br>~~Ge~~|Unintended Use<br>(Note 1)<br>~~Ge~~|
||2SC4116-GR,LXHF<br>~~se~~|YES<br>~~se~~|Automotive Use<br>~~se~~|
|2SC4116-BL<br>~~pO~~|2SC4116-BL,LF<br>~~Ge~~|~~Ge~~|General Use<br>~~Ge~~|
||2SC4116-BL,LXGF<br>~~Ge~~<br>~~pO~~|YES<br>(Note 1)<br>~~Ge~~|Unintended Use<br>(Note 1)<br>~~Ge~~|
||2SC4116-BL,LXHF<br>~~pO~~|YES|Automotive Use|



Note 1: For more information, please contact our sales or use the inquiry form on our website. 

5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 

) 

|Characteristics<br>~~a~~|Characteristics<br>~~a~~|Symbol<br>~~a~~|Rating<br>~~a~~|Unit<br>~~a~~|
|---|---|---|---|---|
|Collector-base voltage<br>~~GO~~||VCBO<br>~~GO~~<br>~~GO~~|60<br>~~GO~~<br>~~GO~~|V<br>~~GO~~|
|Collector-emitter voltage<br>~~a~~||VCEO<br>~~a~~<br>~~GO~~|50<br>~~a~~<br>~~GO~~|V<br>~~a~~|
|Emitter-base voltage<br>~~a~~||VEBO<br>~~GO~~<br>~~a~~|5<br>~~GO~~<br>~~a~~|V<br>~~a~~|
|Collector current (DC)<br>~~a~~||IC<br>~~a~~|150<br>~~a~~|mA<br>~~a~~|
|Base current<br>~~a~~||IB<br>~~a~~|30<br>~~a~~|mA<br>~~a~~|
|Collector power dissipation<br>~~se~~<br>~~|~~|(Note 2), (Note 4)<br>~~se~~<br>~~|~~|PC<br>~~se~~<br>~~Pp~~|200<br>~~se~~<br>~~Pp~~|mW<br>~~se~~<br>~~-~~|
||(Note 3)<br>~~se~~<br>~~|~~||100<br>~~se~~<br>~~Pp~~||
|Junction temperature<br>~~|~~<br>~~rs~~|(Note 2)<br>~~|~~<br>~~rs~~|Tj<br>~~Pp~~<br>~~rs~~|150<br>~~Pp~~<br>~~rs~~|~~-~~<br>~~rs~~|
||(Note 3)<br>~~rs~~||125<br>~~rs~~||
|Storage temperature<br>~~rs~~<br>~~se~~|(Note 2)<br>~~rs~~<br>~~se~~|Tstg<br>~~rs~~<br>~~se~~|-55 to 150<br>~~rs~~<br>~~se~~|~~rs~~<br>~~se~~|
||(Note 3)<br>~~se~~||-55 to 125<br>~~se~~||



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 

Note 2: For devices with the ordering part number ending in LF(T. 

Note 3: For devices with the ordering part number ending in XGF(T, XHF(T. 

Note 4: Device mounted on an 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 0.5 mm[2] × 3) 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-06-30 Rev.6.0 

2 

2SC4116 

## 6. Electrical Characteristics (Unless otherwise specified, Ta = 25 °C ) 

|Characteristics<br>~~a~~|Symbol<br>~~a~~|Note<br>~~ee~~|Test Condition<br>~~ee~~|Min<br>~~ee~~|Typ.<br>~~ee~~|Max<br>~~ee~~|Unit|
|---|---|---|---|---|---|---|---|
|Collector cut-off current<br>~~a~~<br>~~es~~<br>~~De~~|ICBO<br>~~a~~<br>~~es~~<br>~~OO~~|~~ee~~<br>~~GO~~<br>~~OO~~|VCB= 60 V, IE= 0 mA<br>~~ee~~<br>~~GO~~<br>~~OO~~|~~ee~~<br>~~GO~~<br>~~OO~~|~~ee ~~<br>~~GO~~<br>~~OO~~|0.1<br> ~~ee~~<br>~~OO~~|µA<br>~~OO~~|
|Emitter cut-off current<br>~~es~~<br>~~De~~|IEBO<br>~~es~~<br>~~OO~~|~~GO~~<br>~~OO~~|VEB= 5 V, IC= 0 mA<br>~~GO~~<br>~~OO~~|~~GO~~<br>~~OO~~|~~GO~~<br>~~OO~~|0.1<br>~~OO~~|µA<br>~~OO~~|
|DC current gain<br>~~De~~<br>~~pf~~<br>~~a~~|hFE<br>~~OO~~<br>~~pf~~<br>~~a~~|(Note 5)<br>~~OO~~<br>~~pf~~|VCE= 6 V, IC= 2 mA<br>~~OO~~<br>~~pf~~<br>~~ee~~|70<br>~~OO~~<br>~~pf~~<br>~~ee~~|~~OO~~<br>~~pf~~|700<br>~~OO~~<br>~~pf~~|~~OO~~<br>~~pf~~|
|Collector-emitter saturation<br>voltage<br>~~a~~<br>~~De~~|VCE(sat)<br>~~a~~<br>~~GG~~|~~GG~~|IC= 100 mA, IB= 10 mA<br>~~ee~~<br>~~GG~~|~~ee~~<br>~~GG~~|0.1<br>~~GG~~|0.25<br>~~GG~~|V<br>~~GG~~|
|Transition frequency<br>~~a~~<br>~~De~~<br>~~es~~|fT<br>~~a~~<br>~~GG~~<br>~~QO~~|~~GG~~<br>~~QO~~|VCE= 10 V, IC= 1 mA<br>~~ee~~<br>~~GG~~<br>~~QO~~|80<br>~~ee~~<br>~~GG~~<br>~~QO~~|~~GG~~<br>~~QO~~|~~GG~~<br>~~QO~~|MHz<br>~~GG~~<br>~~QO~~|
|Collector output capacitance<br>~~De~~<br>~~es~~<br>~~a~~|Cob<br>~~GG~~<br>~~QO~~<br>~~ee~~|~~GG~~<br>~~QO~~<br>~~ee~~|VCB= 10 V, IE= 0 A, f = 1 MHz<br>~~GG~~<br>~~QO~~<br>~~ee~~|~~GG~~<br>~~QO~~<br>~~ee~~|2.0<br>~~GG~~<br>~~QO~~<br>~~ee~~|3.5<br>~~GG~~<br>~~QO~~<br>~~ee~~|pF<br>~~GG~~<br>~~QO~~<br>~~ee~~|
|Noise figure<br>~~es~~<br>~~a~~|NF<br>~~QO~~<br>~~ee~~|~~QO~~<br>~~ee~~|VCE= 6 V, IC= 0.1 mA,<br>f = 1 kHz, RG= 10 kΩ<br>~~QO~~<br>~~ee~~|~~QO~~<br>~~ee~~|1.0<br>~~QO~~<br>~~ee~~|10<br>~~QO~~<br>~~ee~~|dB<br>~~QO~~<br>~~ee~~|



## 7. Marking 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-06-30 

3 

Rev.6.0 

2SC4116 

## 8. Characteristics Curves (Note) 

Fig. 8.1 IC - VCE 

Fig. 8.3 VCE(sat) - IC 

Fig. 8.5 fT - IC 

Fig. 8.2 hFE - IC 

Fig. 8.4 VBE(sat) - IC 

Fig. 8.6 IB - VBE 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-06-30 

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Rev.6.0 

2SC4116 

Fig. 8.7 h PARAMETER - IC 

Fig. 8.8 h PARAMETER - VCE 

Fig. 8.9 PC - Ta Reference only with Tj of 125 

Fig. 8.10 PC - Ta . Reference only with Tj of 150 °Cc . 

Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-06-30 

5 

Rev.6.0 

2SC4116 

## Package Dimensions 

**==> picture [37 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Unit: mm<br>**----- End of picture text -----**<br>


Weight: 6.0 mg (typ.) 

**==> picture [148 x 41] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Name(s)<br>TOSHIBA: 2-2E1S<br>Nickname: USM<br>**----- End of picture text -----**<br>


©2021 Toshiba Electronic Devices & Storage Corporation 

2021-06-30 Rev.6.0 

6 

2SC4116 

## RESTRICTIONS ON PRODUCT USE 

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- TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. 

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https://toshiba.semicon-storage.com/ 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-06-30 

7 

Rev.6.0 



## Links

- [View this product on Novapart](https://novapart.co/products/2SC4116-GR,LF(T/bipolar-bjt-single-transistor-npn-50-v-150-ma-200)
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- [Supplier page](https://es.farnell.com/toshiba/2sc4116-gr-lf-t/transistor-npn-50v-0-15a-0-2w/dp/3872207)
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