# Bipolar - RF Transistor, NPN, 20 V, 1.5 GHz, 200 mW, 50 mA, SC-70

![Product image](https://novapart.co/image/farnell:2948318RL/)

**URL**: https://novapart.co/products/2SC4082T106P/bipolar-rf-transistor-npn-20-v-15-ghz-200-mw-50-ma
**SKU**: 2SC4082T106P
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.1020
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:1.5GHz; Power Dissipation Pd:200mW; DC Collector Current:5; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 1.5GHz |
| Transistor Case Style | SC-70 |
| Dc Current Gain Hfe Min | 82hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50mA |
| Collector Emitter Voltage Max | 20V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2948318RL/)

## High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 

## **2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K** 

##  **Features** 

1) High transition frequency. (Typ. fT = 1.5GHz) 

2) Small rbb’Cc and high gain. (Typ. 6ps) 

3) Small NF. 

##  **Packaging specifications and hFE** 

|Type|2SC5661|2SC4725|2SC4082|2SC3837K|
|---|---|---|---|---|
|Package|VMT3|EMT3|UMT3|SMT3|
|hFE|NP|NP|NP|NP|
|Marking|AC∗|AC∗|1C∗|AC∗|
|Code|T2L|TL|T106|T146|
|Basic ordering unit<br>(pieces)|8000|3000|3000|3000|



##  **Absolute maximum ratings** (Ta=25C) 

|**Absolute maximum ratings**(Ta=25C)|**Absolute maximum ratings**(Ta=25C)|(Ta=25C)C)C)|||
|---|---|---|---|---|
|Parameter||Symbol|Limits|Unit|
|Collector-base voltage||VCBO|30|V|
|Collector-emitter voltage||VCEO|20|V|
|Emitter-base voltage<br>Collector current||VEBO<br>IC|3<br>50|V<br>mA|
|Collector current<br>Collector power<br>dissipation|2SC4082, 2SC3837K<br>2SC5661, 2SC4725|PC|50<br>0.2<br>0.15|W|
|Junction temperature||Tj|150|°C|
|Junction temperature<br>Storage temperature||Tj<br>Tstg|−55 to+150|°C|



##  **Dimensions** (Unit : mm) 

**==> picture [185 x 319] intentionally omitted <==**

**----- Start of picture text -----**<br>
2SC5661<br>0.22 L l 35 T e 0.13s (1) Base<br>ROHM : VMT3 (2) Emitter<br>(3) Collector<br>2SC4725<br>= r i<br>(1) Emitter<br>ROHM : EMT3 (2) Base<br>EIAJ : SC-75A (3) Collector<br>SOT-416<br>2SC4082<br>(1) Emitter<br>(2) Base<br>ROHM : UMT3 (3) Collector<br>EIAJ : SC-70<br>Each lead has same dimensions<br>2SC3837K 2.9 1.1<br>0.4 0.8<br>(3)<br>(2) (1) (1) Emitter<br>a 0.95 n 0.95 (2) Base<br>ROHM : SMT3 po 1.9 0.15 (3) Collector<br>EIAJ : SC-59<br>Each lead has same dimensions<br>1.6 2.8<br>0.3Min.<br>**----- End of picture text -----**<br>


##  **Electrical characteristics** (Ta=25C) 

|**Electrical characteristics**|**Electrical characteristics**(Ta=25C)C)C)|(Ta=25C)C)C)|||||
|---|---|---|---|---|---|---|
|Parameter|Symbol<br>a|Min.<br><br>ee|Typ.<br>|Max.<br>|Unit<br>|Conditions|
|Collector-base breakdown voltage|BVCBO<br>ee|30<br>ee<br>ee<br>es|−<br>ee|−<br>ee|V<br>ee|IC=10μA|
|Collector-emitter breakdown voltage|BVCEO<br>ee|20<br>ee<br>ee<br>es<br>es|−<br>ee|−<br>ee|V<br>ee|IC=1mA|
|Emitter-base breakdown voltage|BVEBO<br>ee|3<br>es<br>ee<br>es<br>es|−<br>ee<br>es|−<br>ee|V<br>ee|IE=10μA|
|Collector cutoff current|ICBO<br>ee|−<br>es<br>ee<br>es<br>eses|−<br>ee<br>es<br>es|0.5<br>ee|μA<br>ee|VCB=15V|
|Emitter cutoff current|IEBO<br>ee|−<br>es<br>ee<br>eses<br>eses|−<br>es<br>ee<br>es<br>es|0.5<br>ee|μA<br>ee|VEB=2V|
|Collector-emitter saturation voltage|VCE(sat)<br>ee|−<br>eses<br>ee<br>eses<br>es|−<br>es<br>ee<br>es<br>ee|0.5<br>ee|V<br>ee|IC/IB=20mA/4mA|
|DC current transfer ratio|hFE<br>es|82<br>eses<br>es<br>es<br>es ee|−<br>es<br>es<br>ee<br>es ee|180<br>es|−<br>es|VCE/IC=10V/10mA|
|Transition frequency|fT<br>ee|600<br>es<br>ee<br>es ee<br>es|1500<br>ee<br>ee<br>es ee|−<br>ee|MHz<br>ee|VCE=10V , IE= −10mA , f=200MHz|
|Output capacitance|Cob<br>ee|−<br>es ee<br>ee<br>es|0.9<br>es ee<br>ee|1.5<br>ee|pF<br>ee|VCB=10V , IE=0A , f=1MHz|
|Collector-base time constant|rbb'·Cc<br>es|−<br>es<br>es<br>es|6<br>es|13<br>es|ps<br>es|VCB=10V , IC=10mA , f=31.8MHz|
|Noise factor|NF<br>ee|−<br>ee<br>es|4.5<br>ee|−<br>ee|dB<br>ee|VCE=12V , IC=2mA , f=200MHz , Rg=50Ω|



This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com 

**2009.12 - Rev.C** 

1/3 

○c 2009 ROHM Co., Ltd. All rights reserved. 

**2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K** 

Data Sheet 

##  **Electrical characteristic curves** 

**==> picture [329 x 523] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 Ta = 25 ° C 500 Ta = 25 ° C<br>VCECE = 10V IC/IB = 5<br>200 200<br>100 100<br>50 50<br>20 20<br>10 10<br>0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR CURRENT : IC (mA)C (mA)(mA) COLLECTOR CURRENT : IC (mA)<br>Fig.1  DC current gain vs. collector current Fig.2  Collector-emitter saturation voltage<br>          vs. collector current<br>5000 Ta = 25 ° C 50<br>VCE = 10V<br>2000<br>20<br>1000<br>10<br>500<br>5<br>200<br>2 Ta = 25 ° C<br>VCE = 10V<br>100 − 0.1 − 0.2 − 0.5 − 1 − 2 − 5 − 10 − 20 − 50 1 f = 31.8MHz<br>0.1 0.2 0.5 1 2 5 10 20 50<br>EMITTER CURRENT : IE (mA)<br>COLLECTOR CURRENT : IC (mA)<br>Fig.4  Gain bandwidth product vs. emitter current<br>Fig.5  Collector to base time constance<br>          vs. collector current<br>25 Ta = 25 ° C 30 Ta = 25 ° C<br>VCE = 12V ICC = 2mA<br>20 f = 200MHz 25 f = 200MHz<br>20<br>15<br>15<br>10<br>10<br>5<br>5<br>0 0<br>0.5 1 2 5 10 20 50 0 2 4 6 8 10 12<br>COLLECTOR CURRENT : Ic (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V)CE (V)(V)<br>FE (mV)CE(sat)<br>COLLECTOR SATURATION VOLTAGE :V<br>rbb' (ps)<br>c<br>(MHz)<br>T<br>TRANSITION FREQUENCY : f<br>COLLECTOR TO BASE TIME CONSTANT : C<br>2 (dB)21el 2 (dB)21el (dB)21el21el<br>INSERTION GAIN : IS INSERTION GAIN : IS<br>**----- End of picture text -----**<br>


**==> picture [137 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 Ta = 25 ° C<br>VCECE = 10V<br>200<br>100<br>50<br>20<br>10<br>0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR CURRENT : IC (mA)C (mA)(mA)<br>FE<br>DC  CURRENT TRANSFER RATIO :h<br>**----- End of picture text -----**<br>


Fig.4  Gain bandwidth product vs. emitter current 

**==> picture [136 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 Ta = 25 ° C<br>ICC = 2mA<br>25 f = 200MHz<br>20<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12<br>COLLECTOR TO EMITTER VOLTAGE : VCE (V)CE (V)(V)<br>Fig.8  Insertion gain vs. collector voltage<br>2 (dB)21el (dB)21el21el<br>INSERTION GAIN : IS<br>**----- End of picture text -----**<br>


Fig.7  Insertion gain vs. collector current 

**==> picture [136 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0 Ta = 25 ° C<br>f = 1MHz<br>IE = 0A<br>2.0<br>Cob<br>1.0<br>0.5 Cre<br>0.2<br>0.1<br>0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR TO BASE VOLTAGE : VCB (V)<br>(pF)<br>(pF) re<br>oB<br>OUTPUT CAPACITANCE :C FEEDBACK CAPACITANCE :C<br>**----- End of picture text -----**<br>


Fig.3  Capacitance vs. reverse bias voltage 

**==> picture [133 x 331] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ta = 25 ° C<br>25 V CE = 10V<br>IC = 10mA<br>20<br>15<br>10<br>5<br>0<br>0.1 0.2 0.5 1 2 5 10<br>FREQUENCY : f (GHz)<br>Fig.6  Insertion gain vs. frequency<br>Ta = 25 ° C<br>VCE = 12V<br>f = 200MHz<br>20<br>10<br>0<br>0.1 0.2 0.5 1 2 5 10 20 50<br>COLLECTOR CURRENT : IC (mA)<br>2 (dB)21el<br>INSERTION GAIN : IS<br>NOISE FIGURE : NF(dB)<br>**----- End of picture text -----**<br>


Fig.9  Noise factor vs. collector current 

www.rohm.com 

**2009.12 - Rev.C** 

2/3 

○c 2009 ROHM Co., Ltd. All rights reserved. 

**2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K** 

Data Sheet 

**==> picture [136 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 Ta = 25 ° C<br>IC = 2mA<br>25 f = 200MHz<br>20<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12<br>COLLECTOR TO EMITTER VOLTAGE : VCE (V)<br>NOISE FIGURE : NF(dB)<br>**----- End of picture text -----**<br>


Fig.10  Noise factor vs. collector voltage 

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 

**2009.12 - Rev.C** 

3/3 

Notice 

## **N o t e s** 

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 

The content specified herein is subject to change for improvement without notice. 

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 

Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 

The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 

The Products specified in this document are not designed to be radiation tolerant. 

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. 

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. 

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. 

**==> picture [80 x 61] intentionally omitted <==**

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

http://www.rohm.com/contact/ 

www.rohm.com © 2009  ROHM Co., Ltd. All rights reserved. 

R0039A 



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