# Bipolar (BJT) Single Transistor, NPN, 100 V, 1 A, 1.3 W, SOT-89, Surface Mount
**URL**: https://novapart.co/products/2SC3646S-TD-E/bipolar-bjt-single-transistor-npn-100-v-1-a-13-w
**SKU**: 2SC3646S-TD-E
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1820
**Stock**: 200+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:120MHz; Power Dissipation Pd:1.3W; DC Collector Current:1A; DC Current Gain hFE:140hFE; Transis
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 120MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 140hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2724339/)
**DATA SHEET www.onsemi.com**
## Bipolar Transistor
**(–)100 V, (–)1 A, Low VCE(sat), (PNP)NPN Single PCP**
## 2SA1416, 2SC3646
## **Features**
- Adoption of FBET and MBIT Processes
- High Breakdown Voltage and Large Current Capacity
- Fast Switching Speed
- Ultrasmall Size Making it Easy to Provide High−Density Small−Sized Hybrid IC’s
- These Devices are Pb−Free and are RoHS Compliant
## **ELECTRICAL CONNECTION**
**==> picture [192 x 149] intentionally omitted <==**
**----- Start of picture text -----**
2 2
1: Base
1 1 2: Collector
3: Emitter
3 3
2SA1416 2SC3646
1
2
3
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**SOT−89 / PCP−1 CASE 419AU**
## **SPECIFICATIONS ( ): 2SA1416**
## **ABSOLUTE MAXIMUM RATINGS** at Ta = 25 ° C
|**SPECIFICATIONS ( ): 2SA1416**
**ABSOLUTE MAXIMUM RATINGS**at|Ta = 25°C|||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector to Base Voltage|VCBO|(−) 120|V|
|Collector to Emitter Voltage|VCEO|(−) 100|V|
|Emitter to Base Voltage|VEBO|(−) 6|V|
|Collector Current|IC|(−) 1|A|
|Collector Current (Pulse)|ICP|(−) 2|A|
|Collector Dissipation|PC|500|mW|
|Collector Dissipation (Note 1)||1.3|W|
|Junction Temperature|TJ|150|°C|
|Storage Temperature|TSTG|−55 to
+150|°C|
## **MARKING DIAGRAM**
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RANK RANK
2SA1416 2SC3646
AB LOT No. CB LOT No.
**----- End of picture text -----**
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 6 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted on ceramic substrate (250 mm[2] x 0.8 mm).
Publication Order Number: **2SA1416/D**
**1**
© Semiconductor Components Industries, LLC, 2005 **January, 2022 − Rev. 2**
**2SA1416, 2SC3646**
## **ELECTRICAL CHARACTERISTICS** at TA = 25 ° C
|**ELECTRICAL CHARACTERISTIC**|**ELECTRICAL CHARACTERISTIC**|**ELECTRICAL CHARACTERISTIC**|**S** at TA= 25°C||||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**|||**Symbol**|**Conditions**||**Ratings**||**Unit**|
||||||**Min**|**Typ**|**Max**||
|Collector Cutoff Current|||ICBO|VCB= (-)100 V,
IE= 0 A|||(-)100|nA|
|Emitter Cutoff Current|||IEBO|VEB= (-)4V, IC= 0 A|||(-)100|nA|
|DC Current Gain|||hFE|VCE= (-)5 V,
IC= (-)100 mA|100*||400*||
|Gain−Bandwidth Product|||fT|VCE= (-)10 V,
IC= (-)100 mA||120||MHz|
|Output Capacitance|||Cob|VCB= (-)10 V,
f = 1 MHz||(13)8.5||pF|
|Collector to Emitter Saturation Voltage|||VCE(sat)|IC= (-)400 mA,
IB= (-)40 mA||(−0.2)0.1|(-0.6)0.4|V|
|Base to Emitter Saturation Voltage|||VBE(sat)|IC= (-)400 mA,
IB= (-)−40 mA||(-)0.85|(-)1.2|V|
|Collector to Base Breakdown Voltage|||V(BR)CBO|IC= (-)10�A, IE= 0 A|(-)120|||V|
|Collector to Emitter Breakdown
Voltage|||V(BR)CEO|IC= (-)1 mA, RBE=∞|(-)100|||V|
|Emitter to Base Breakdown Voltage|||V(BR)EBO|IE= (-)10�A, IC= 0 A|(-)6|||V|
|Turn−On Time|||ton|See specified
Test Circuit||(80)80||ns|
|Storage Time|||tstg|||(700)850||ns|
|Fall Time|||tf|||(40)50||ns|
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*The 2SA1416/2SC3646 are classified by100 mA hFEas follows :
**Rank**
**R**
**S**
**T**
hFE
100 to 200
140 to 280
200 to 400|||||||||
|**Rank**|**R**|**S**|||||||
|hFE|100 to 200|140 to 280|||||||
## **Switching Time Test Circuit**
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IB1
PW = 20 � s
D.C. ≤ 1% IB2
INPUT RB
VR RL
50 � + +
100 � F 470 � F
−5 V 50 V
IC = 10 IB1= −10 IB2 = 400 mA
(For PNP, the polarity is reversed)
**----- End of picture text -----**
**www.onsemi.com**
**2**
**2SA1416, 2SC3646**
## **TYPICAL CHARACTERISTICS**
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**----- Start of picture text -----**
−1.0
2SA1416 −30 mA
−25 mA −15 mA
−0.8
−20 mA −10 mA
−5 mA
−0.6
−3 mA
−0.4
−2 mA
−1 mA
−0.2
IB = 0 mA
0
0 −1 −2 −3 −4 −5
Collector to Emitter Voltage, VCE (V)
(A)
C
Collector Current, I
**----- End of picture text -----**
**Figure 1. IC − VCE**
**==> picture [220 x 183] intentionally omitted <==**
**----- Start of picture text -----**
1.0
2SC3646 30 mA
25 mA
15 mA
20 mA
0.8
10 mA
0.6 5 mA
3 mA
2 mA
0.4
1 mA
0.2
IB = 0 mA
0
0 1 2 3 4 5
Collector to Emitter Voltage, VCE (V)
(A)
C
Collector Current, I
**----- End of picture text -----**
**Figure 2. IC − VCE**
**==> picture [228 x 408] intentionally omitted <==**
**----- Start of picture text -----**
−500
−2.5 mA 2SA1416
−2.0 mA
−400
−1.5 mA
−300
−1.0 mA
−200
−0.5 mA
−100
IB = 0 mA
0
0 −10 −20 −30 −40 −50
Collector to Emitter Voltage, VCE (V)
Figure 3. IC − VCE
−1.2
2SA1416
VCE = −5 V
−1.0
−0.8
−0.6
Ta = 75 ° C 25 ° C
−0.4
−25 ° C
−0.2
0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Base to Emitter Voltage, VBE (V)
Figure 5. IC − VBE
(mA)
C
Collector Current, I
(A)
C
Collector Current, I
**----- End of picture text -----**
**==> picture [226 x 407] intentionally omitted <==**
**----- Start of picture text -----**
500
2.5 mA 2.0 mA 2SC3646
400
1.5 mA
300
1.0 mA
200
0.5 mA
100
IB = 0 mA
0
0 10 20 30 40 50
Collector to Emitter Voltage, VCE (V)
Figure 4. IC − VCE
1.2
2SC3646
VCE = 5 V
1.0
0.8
0.6
°
Ta = 75 C °
25 C
0.4
−25 ° C
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage, VBE (V)
Figure 6. IC − VBE
(mA)
C
Collector Current, I
(A)
C
Collector Current, I
**----- End of picture text -----**
**www.onsemi.com**
**3**
**2SA1416, 2SC3646**
## **TYPICAL CHARACTERISTICS** (continued)
**==> picture [480 x 613] intentionally omitted <==**
**----- Start of picture text -----**
1000 2SA1416 1000 2SC3646
7 VCE = −5 V 7 VCE = 5 V
5 5
3 Ta = 75 ° C 3 Ta = 75 ° C
2 2
° −25 ° C −25 ° C
100 25 C 100 25 ° C
7 7
5 5
3 3
2 2
10 10
7−0.01 2 3 5 7 −0.1 2 3 5 7−1.0 2 3 7−0.01 2 3 5 7 −0.1 2 3 5 7−1.0 2 3
Collector Current, IC (A) Collector Current, IC (A)
Figure 7. hFE − IC Figure 8. hFE − IC
3 100
2SA1416 / 2SC3646 2SA1416 / 2SC3646
2 VCE = 10 V 7 f = 1 MHz
5
2SA1416
100 3
7 2 2SA1416
2SC3646
5
10
3 7
5
2 2SC3646
3
For PNP, minus sign is omitted For PNP, minus sign is omitted
10 2
7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC (A) Collector−to−Base Voltage, VCB (V)
Figure 9. fT − IC Figure 10. Cob − VCB
−1000 1000
2SA1416 2SC3646
7 IC / IB = 10 7 IC / IB = 10
5 5
3 3
2 2
−100 100
7 Ta = 75 ° C 7 Ta = 75 ° C
5 5
−25 ° C
3 25 ° C 3 25 ° C −25 ° C
2 2
7−0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC (A) Collector Current, IC (A)
FE FE
DC Current Gain, h DC Current Gain, h
(MHz)
T
Output Capacitance, Cob (pF)
Gain−Bandwidth Product, f
(sat) (mV)
(sat) (mV)
CE
CE
Voltage, V
Voltage, V
Collector−to−Emitter Saturation
Collector−to−Emitter Saturation
**----- End of picture text -----**
**Figure 11. VCE(sat) − IC**
**Figure 12. VCE(sat) − IC**
**www.onsemi.com**
**4**
**2SA1416, 2SC3646**
## **TYPICAL CHARACTERISTICS** (continued)
**==> picture [231 x 401] intentionally omitted <==**
**----- Start of picture text -----**
−10
2SA1416
7 IC / IB = 10
5
3
2
−1.0 Ta = −25 ° C
7
5 25 ° C −75 ° C
3 7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2
Collector Current, IC (A)
Figure 13. VBE(sat) − IC
5
3 ICP = 2 A
2
IC = 1 A 1 ms
1.0 10 ms
7
5 DC operation
100 ms
3
2
0.1
7
5 For PNP, minus sign is omitted
3 2SA1416 / 2SC3646
2 Single pulse Ta = 25 ° C
0.01 Mounted on a ceramic board
7 (250 mm [2] x 0.8 mm)
5
5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector−to−Emitter Voltage, VCE (V)
(sat) (V)
Base−to−Emitter BE
Saturation Voltage, V
(A)
C
Collector Current, I
**----- End of picture text -----**
**Figure 15. ASO**
**==> picture [232 x 183] intentionally omitted <==**
**----- Start of picture text -----**
10
2SC3646
7 IC / IB = 10
5
3
2
1.0 Ta = −25 ° C
7
5 25 ° C −75 ° C
3
7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2
Collector Current, IC (A)
(sat) (V)
Base−to−Emitter BE
Saturation Voltage, V
**----- End of picture text -----**
**Figure 14. VBE(sat) − IC**
**==> picture [225 x 185] intentionally omitted <==**
**----- Start of picture text -----**
1.6
2SA1416 / 2SC3646
1.4
1.3 Mounted on a ceramic board
1.2
(250 mm [2] x 0.8 mm)
1.0
0.8
0.6
0.5 No heat sink
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta ( ° C)
(W)
C
Collector Dissipation, P
**----- End of picture text -----**
**Figure 16. PC − Ta**
**www.onsemi.com**
**5**
**2SA1416, 2SC3646**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|2SA1416S−TD−E|AB|SOT−89 / PCP−1
(Pb−Free)|1000 / Tape & Reel|
|2SA1416T−TD−E||||
|2SC3646S−TD−E|CB|||
|2SC3646T−TD−E||||
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**www.onsemi.com**
**6**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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**----- Start of picture text -----**
SOT−89 / PCP−1
CASE 419AU
ISSUE O
DATE 30 APR 2012
**----- End of picture text -----**
## **DOCUMENT NUMBER: 98AON79746E**
**DESCRIPTION: SOT−89 / PCP−1**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 1**
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© Semiconductor Components Industries, LLC, 2019
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## **PUBLICATION ORDERING INFORMATION**
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◊
**==> picture [232 x 43] intentionally omitted <==**
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