# Bipolar (BJT) Single Transistor, PNP, 30 V, 2 A, 500 mW, SOT-346, Surface Mount

![Product image](https://novapart.co/image/farnell:2965303/)

**URL**: https://novapart.co/products/2SB1706TL/bipolar-bjt-single-transistor-pnp-30-v-2-a-500-mw
**SKU**: 2SB1706TL
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1100
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 500mW |
| Dc Current Gain Hfe | 270hFE |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transistor Case Style | SOT-346 |
| Dc Current Gain Hfe Min | 270hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2A |
| Collector Emitter Voltage Max | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2965303/)

2SB1706 

Transistors 

## Low frequency amplifier 

## **2SB1706** 

� **Application** Low frequency amplifier Driver 

� **Features** 

- 1) A collector current is large. 

- 2) VCE(sat) ≤ -370mV 

At lc= -1.5A / lB= -75mA 

## � **External dimensions** (Unit : mm) 

**==> picture [187 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
TSMT3<br>1.0MAX<br>2.9 0.85<br>0.4 0.7<br>(3)<br>(1) (2)<br>0.95 0.95<br>1.9 0.16<br>(1) Base<br>(2) Emitter<br>(3) Collector Each lead has same dimensions<br>1.6 2.8 0~0.1<br>0.60.3~<br>**----- End of picture text -----**<br>


## � **Absolute maximum ratings** (Ta=25°C) 

|Parameter|Symbol|Limits|Unit|
|---|---|---|---|
|Collector-base voltage|VCBO|−30|V|
|Collector-emitter voltage|VCEO|−30|V|
|Emitter-base voltage|VEBO|−6|V|
|Collector current|IC|−2|A|
||ICP|−4|∗1<br>A|
|Power dissipation|PC|500|mW<br>∗2|
|Junction temperature|Tj|150|°C|
|Range of storage temperature|Tstg|−55 to+150|°C|



∗ 1 Single pulse, Pw = 1ms 

∗ 2 Each Terminal Mounted on a Recommended 

## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**(Ta=25°|C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Collector-base breakdown voltage|BVCBO|−30|−|−|V|IC= −10µA|
|Collector-emitter breakdown voltage|BVCEO|−30|−|−|V|IC= −1mA|
|Emitter-base breakdown voltage|BVEBO|−6|−|−|V|IE= −10µA|
|Collector cutoff curent|ICBO|−|−|−100|nA|VCB= −30V|
|Emitter cutoff current|IEBO|−|−|−100|nA|VEB= −6V|
|Collector-emitter saturation voltage|VCE(sat)|−|−180|−370|mV|IC= −1.5A, IB= −75mA|
|DC current gain|hFE|270|−|680|−|VCE= −2V, IC= −200mA|
|Transition frequency|fT|−|280|−|MHz|VCE= −2V, IE=200mA, f=100MHz|
|Collector output capacitance|Cob|−|20|−|pF|VCB= −10V, IE=0A, f=1MHz|



Rev.D 1/2 

2SB1706 

Transistors 

## � **Packaging specifications** 

|package<br>Code<br>Basic order<br>Type|Taping|
|---|---|
||TL|
||ing unit(pieces)<br>3000|
|2SB1706||



## � **Electrical characteristic curves** 

**==> picture [432 x 513] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 VCE=  − 2V 10 IC/IB=20/1 10 Ta=25 C<br>Ta=100 C Pulsed Pulsed Pulsed<br>Ta=25 C<br>1<br>Ta= − 40 C<br>100 1 IC/IB=50/1<br>0.1 Ta= − 40 C IC/IB=20/1 IC/IB=10/1<br>Ta=25 C<br>Ta=100 C<br>10 0.01 0.1<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br> COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)<br>Fig.1 DV current gain Fig.2 Collector-emitter saturation voltage Fig.3 Base-emitter saturation voltage<br>         vs. collector current          vs. collector current          vs. collectir current<br>10 VBE=2V 1000 Ta=25 C  10000 Ta=25 C<br>Pulsed VCE=  − 2V VCE=  − 12V<br>f=100MHz IC/IB=20/1<br>Pulsed<br>1000<br>Ta=100 C tstg<br>Ta=25 C<br>1<br>Ta= − 40 C 100 100<br>tf<br>tdon<br>0.1 10<br>tr<br>0.010.1 1 10 100.01 0.1 1 10 0.011 0.1 1 10<br>BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A)<br>Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time<br>characteristics          vs. emitter curent<br>1000<br>IC=0A<br>f=1MHz<br>Cib Ta=25 C<br>100<br>Cob<br>10<br>1<br>0.001 0.01 0.1 1 10 100<br>EMITTER TO BASE VOLTAGE : VBE (V)<br>COLLECTOR TO BASE VOLTAGE : VCB (V)<br>Fig.7 Collector output capacitance<br>         vs. collector-base voltage<br>         Emitter input capacitance<br>         vs. emitter-base voltage<br>(V)  (V)<br>CE(sat)  BE(sat)<br>FE<br>DC CURRENT GAIN : h<br>COLLECTOR SATURATION VOLTAGE : V BASE SATURATION VOLTAGE : V<br>COLLECTOR CURRENT :I (A)C SWITCHINGTIME : (ns)<br>TRANSITION FREQUENCY : fT (MHz)<br>COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)<br>**----- End of picture text -----**<br>


Rev.D 2/2 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1 



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