# Bipolar (BJT) Single Transistor, PNP, 20 V, 5 A, 10 W, TO-252, Surface Mount

![Product image](https://novapart.co/image/farnell:3615195/)

**URL**: https://novapart.co/products/2SB1205S-TL-E./bipolar-bjt-single-transistor-pnp-20-v-5-a-10-w-to
**SKU**: 2SB1205S-TL-E.
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.4610
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 10W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 320MHz |
| Transistor Case Style | TO-252 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 5A |
| Collector Emitter Voltage Max | 20V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615195/)

**Ordering number : EN2114C** 

## **2SB1205** 

## **Bipolar Transistor –20V, –5A, Low VCE(sat), PNP Single TP/TP-FA** 

http://onsemi.com 

## **Applications** 

- Flash, voltage regulators, relay drivers, lamp drivers 

## **Features** 

- Adoption of FBET, MBIT processes 

- Fast switching speed 

   - [•] Low saturation voltage 

   - [•] Large current capacity 

- Small and slim package making it easy to make 2SB1205-applied sets smaller 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

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**----- Start of picture text -----**<br>
Parameter Symbol Conditions Ratings Unit<br>Collector-to-Base Voltage VCBO --25 V<br>Collector-to-Emitter Voltage VCEO --20 V<br>Emitter-to-Base Voltage VEBO --5 V<br>Collector Current IC --5 A<br>Collector Current (Pulse) ICP --8 A<br>Continued on next page.<br>Package Dimensions  unit : mm (typ) Package Dimensions  unit : mm (typ)<br>7518-003  7003-003<br>6.5 2.3 6.5 2.3<br>5.0 0.5 2SB1205S-E 5.0 0.5 2SB1205S-TL-E<br>4 2SB1205T-E 4 2SB1205T-TL-E<br>7<br>0.85 0.85 0.5<br>0.7<br>1.2<br>1 2 3<br>0.6 0.5 0.6 0 to 0.2<br>1 : Base<br>1 : Base 1.2<br>| ! 2 : Collector roy 2 : Collector<br>1 2 3 3 : Emitter<br>3 : Emitter<br>4 : Collector<br>4 : Collector 2.3 2.3<br>2.3 2.3 TP TP-FA<br>aa can<br>1.5 1.5<br>5.5 7.0 5.5 7.0<br>1.2<br>.8 2.5<br>0.8 .61 7.5 0<br>**----- End of picture text -----**<br>


Continued on next page. 

**Package Dimensions** unit : mm (typ) 7518-003 

## **Product & Package Information** 

- Package : TP 

   - Package : TP-FA 

- JEITA, JEDEC : SC-64, TO-251 

- JEITA, JEDEC : SC-63, TO-252 

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• Minimum Packing Quantity : 500 pcs./bag  • Minimum Packing Quantity : 700 pcs./reel<br>Marking   Packing Type (TP-FA) : TL  Electrical Connection<br>(TP, TP-FA)<br>**----- End of picture text -----**<br>


2,4 

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B1205<br>RANK LOT No.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>TL<br>3<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 

**September, 2013** 

D0512 TKIM TC-00002845/N2503TN (KT)/92098HA (KT)/8219MO/4137KI/4116KI, TS  No.2114-1/9 

**2SB1205** 

|Continued from preceding page.|Continued from preceding page.||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Base Current|IB||--0.5|A|
|Collector Dissipation|PC||1|W|
|||Tc=25°C|10|W|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics**at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Collector Cutoff Current|ICBO|VCB=--20V, IE=0A|||--500|nA|
|Emitter Cutoff Current|IEBO|VEB=--4V, IC=0A|||--500|nA|
|DC Current Gain|hFE1|VCE=--2V, IC=500mA|100*||400*||
||hFE2|VCE=--2V, IC=--4A|60||||
|Gain-Bandwidth Product|fT|VCE=--5V, IC=--200mA||320||MHz|
|Output Capacitance|Cob|VCB=--10V, f=1MHz||60||pF|
|Collector-to-Emitter Saturation Voltage|VCE(sat)|IC=--3A, IB=--60mA||--250|--500|mV|
|Base-to-Emitter Saturation Voltage|VBE(sat)|IC=--3A, IB=--60mA||--1.0|--1.3|V|
|Collector-to-Base Breakdown Voltage|V(BR)CBO|IC=--10μA, IE=0A|--25|||V|
|Collector-to-Emitter Breakdown Voltage|V(BR)CEO|IC=--1mA, RBE=∞|--20|||V|
|Emitter-to-Base Breakdown Voltage|V(BR)EBO|IE=--10μA, IC=0A|--5|||V|
|Turn-On Time|ton|See specif ed Test Circuit.||40||ns|
|Storage Time|tstg|||200||ns|
|Fall Time|tf|||10||ns|



## * : The 2SB1205 is classifi ed by 500mA hFE as follows : 

|Rank|R|S|T|
|---|---|---|---|
|hFE|100 to 200|140 to 280|200 to 400|



## **Switching Time Test Circuit** 

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**----- Start of picture text -----**<br>
IB1<br>PW=20 μ s OUTPUT<br>D.C. ≤ 1% IB2<br>INPUT VR RB<br>RL<br>50 Ω<br>+ +<br>100 μ F 470 μ F<br>VBE=5V VCC= --10V<br>**----- End of picture text -----**<br>


IC=10IB1= --10IB2= --2A 

## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|2SB1205S-E|TP|500pcs./bag|Pb Free|
|2SB1205T-E|TP|500pcs./bag||
|2SB1205S-TL-E|TP-FA|700pcs./reel||
|2SB1205T-TL-E|TP-FA|700pcs./reel||



No.2114-2/9 

**2SB1205** 

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**----- Start of picture text -----**<br>
IC  --  VCE IC  --  VCE<br>--5 --5<br>From top<br>--100mA<br>--90mA<br>--4 --4<br>--80mA<br>--70mA<br>--3 --3<br>--2 --2<br>--1 --1<br>IB=0 IB=0<br>0 0<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 0 --1 --2 --3 --4 --5<br>Collector-to-Emitter Voltage, VCE  --  V ITR09216 Collector-to-Emitter Voltage, VCE  --  V ITR09217<br>IC  --  VBE hFE  --  IC<br>--6 1000<br>VCE= --2V VCE= --2V<br>7<br>--5<br>5<br>--4 3<br>2<br>--3<br>100<br>--2 7<br>5<br>--1<br>3<br>0 2<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10<br>Base-to-Emitter Voltage, VBE  --  V ITR09218 Collector Current, IC  --  A ITR09219<br>fT  --  IC Cob  --  VCB<br>1000 3<br>VCE= --5V f=1MHz<br>7<br>2<br>5<br>3 100<br>2<br>7<br>5<br>100<br>7 3<br>5<br>2<br>3<br>2 10<br>5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 5 7 --1.0 2 3 5 7 --10 2 3<br>Collector Current, IC  --  A ITR09220 Collector-to-Base Voltage, VCB  --  V ITR09221<br>VCE(sat)  --  IC VBE(sat)  --  IC<br>--1000 --10<br>IC / IB=50 IC / IB=50<br>7<br>7<br>5<br>5<br>3<br>2 3<br>2<br>--100<br>7<br>5 --1.0<br>3 7<br>2 5<br>--10 3<br>5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10<br>Collector Current, IC  --  A ITR09222 Collector Current, IC  --  A ITR09223<br>--5mA<br>--10mA<br>--25°C<br>25°C<br>Ta=75°C<br>--10mA<br>Ta= --25°C<br>25°C<br>--20mA<br>--15mA<br>Ta= --25°C<br>75°C<br>--30mA<br>75°C<br>--20mA<br>25°C<br>--25mA<br>--40mA --30mA<br>--35mA<br>--60mA --50mA --40mA<br>Ta=75°C<br>°C<br>--25<br>°C<br>25<br>Collector Current, IC  --  A Collector Current, IC  --  A<br>DC Current Gain, hFE<br>Collector Current, IC  --  A<br>Output Capacitance, Cob  --  pF<br>Gain-Brandwidth Product, fT  --  MHz<br>Collector-to-Emitter  Saturation Voltage, VCE(sat)  --  mV Base-to-Emitter Saturation Voltage, VBE(sat)  --  mV<br>**----- End of picture text -----**<br>


No.2114-3/9 

**2SB1205** 

**==> picture [214 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
A S O<br>2<br>--10 ICP= --8A<br>IC= --5A<br>5<br>3<br>2<br>--1.0<br>5<br>3<br>2<br>--0.1<br>Tc=25°C<br>5<br>3 Single pulse<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5<br>Collector-to-Emitter Voltage, VCE  --  V ITR09224<br>DC operation(Ta=25°<br>C)<br>100ms 10ms<br>DC operation(Tc=25C)°<br>1ms<br>Collector Current, IC  --  A<br>**----- End of picture text -----**<br>


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PC  --  Ta<br>12<br>10<br>8<br>6<br>4<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C ITR09225<br>No heat sink<br>Collector Dissipation, PC  --  W<br>**----- End of picture text -----**<br>


No.2114-4/9 

**2SB1205** 

## **Taping Specifi cation** 

2SB1205S-TL-E, 2SB1205T-TL-E 

**==> picture [464 x 665] intentionally omitted <==**

No.2114-5/9 

**2SB1205** 

**Outline Drawing** 2SB1205S-TL-E, 2SB1205T-TL-E 

## **Land Pattern Example** 

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**----- Start of picture text -----**<br>
Mass (g) Unit Unit: mm<br>0.282<br>* For reference [mm]<br>7.0<br>1.5<br>2.3 2.3<br>7.0<br>2.0<br>2.5<br>**----- End of picture text -----**<br>


No.2114-6/9 

**2SB1205** 

## **Bag Packing Specifi cation** 

2SB1205S-E, 2SB1205T-E 

No.2114-7/9 

**2SB1205** 

## **Outline Drawing** 

2SB1205S-E, 2SB1205T-E 

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**----- Start of picture text -----**<br>
Mass (g) Unit<br>0.315<br>* For reference [mm]<br>**----- End of picture text -----**<br>


No.2114-8/9 

**2SB1205** 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No.2114-9/9 



## Links

- [View this product on Novapart](https://novapart.co/products/2SB1205S-TL-E./bipolar-bjt-single-transistor-pnp-20-v-5-a-10-w-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/2sb1205s-tl-e/bipolar-transistor/dp/3615195)
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