# Bipolar (BJT) Single Transistor, PNP, 50 V, 1 A, 1.3 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:2845286/)

**URL**: https://novapart.co/products/2SB1122S-TD-E/bipolar-bjt-single-transistor-pnp-50-v-1-a-13-w
**SKU**: 2SB1122S-TD-E
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1750
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 1.3W |
| Dc Current Gain Hfe | 140hFE |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 150MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 140hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845286/)

- **Ordering number : EN2040C 2SB1122** 

- ~~—_~~ @ 

## **Ordering number : EN2040C 2SB1122** ~~—_~~ **Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP** 

http://onsemi.com 

## **Applicaitons** 

- Voltage regulators relay drivers, lamp drivers, electrical equipment 

## **Features** 

- Adoption of FBET process 

- Ultrasmall size making it easy to provide high-density hybrid IC’s 

## **Specifi cations** 

**Absolute Maximum Ratings** at Ta=25°C 

Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO --60 V Collector to Emitter Voltage VCEO --50 V Emitter to Base Voltage VEBO --5 V Collector Current IC --1 A ~~===~~ Collector Current (Pulse) ICP --2 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Package Dimensions** 

unit : mm (typ) 7007B-004 

## **Product & Package Information** 

- Package 

: PCP 

- JEITA, JEDEC : SC-62, SOT-89, TO-243 

- Minimum Packing Quantity : 1,000 pcs./reel 

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Top View 2SB1122S-TD-E<br>4.5 2SB1122T-TD-E<br>1.6 1.5<br>1 2 3<br>0.4<br>0.4<br>0.5<br>1.5<br>3.0<br>2<br>f= 0.75<br>1<br>3<br>1 : Base<br>2 : Collector<br>3 : Emitter<br>a 7<br>Bottom View PCP<br>2.5<br>1.0 4.0<br>**----- End of picture text -----**<br>


## **Packing Type: TD** 

## **Marking** 

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**----- Start of picture text -----**<br>
TD RANK<br>BE LOT No.<br>**----- End of picture text -----**<br>


## **Electrical Connection** 

Semiconductor Components Industries, LLC, 2013 **December, 2013** 

D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS  No.2040-1/4 

**2SB1122** 

## Continued from preceding page. 

|Continued from preceding page.|||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Collector Dissipation|PC|When mounted on ceramic substrate (250mm<br>2×0.8mm)|1.3|W|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|



## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Collector Cutoff Current|ICBO|VCB=--50V, IE=0A|||--100|nA|
|Emitter Cutoff Current|IEBO|VEB=--4V, IC=0A|||--100|nA|
|DC Current Gain|hFE1|VCE=--2V, IC=--100mA|140*||400*||
||hFE2|VCE=--2V, IC=--1A|30||||
|Gain-Bandwidth Product|fT|VCE=--10V, IC=--50mA||150||MHz|
|Output Capacitance|Cob|VCB=--10V, f=1MHz||12||pF|
|Collector to Emitter Saturation Voltage|VCE(sat)|IC=--500mA, IB=--50mA||--180|--500|mV|
|Base to Emitter Saturation Voltage|VBE(sat)|IC=--500mA, IB=--50mA||--0.9|--1.2|V|
|Collector to Base Breakdown Voltage|V(BR)CBO|IC=--10μA, IE=0A|--60|||V|
|Collector to Emitter Breakdown Voltage|V(BR)CEO|IC=--1mA, RBE=∞|--50|||V|
|Emitter to Base Breakdown Voltage|V(BR)EBO|IE=--10μA, IC=0A|--5|||V|
|Turn-ON Time|ton|See specif ed Test Circuit.||40||ns|
|Storage Time|tstg|||300||ns|
|Fall Time|tf|||30||ns|



* : 2SB1122 is classifi ed by 100mA hFE as follows : 

|Rank|S|T|
|---|---|---|
|hFE|140 to 280|200 to 400|



## **Switching Time Test Circuit** 

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**----- Start of picture text -----**<br>
IB1<br>PW=20μs<br>D.C.≤1% IB2 OUTPUT<br>INPUT VR RB RL<br>50Ω<br>50Ω<br>+ +<br>100μF 470μF<br>VBE=5V VCC= --25V<br>**----- End of picture text -----**<br>


IC=10IB1= --10IB2= --500mA 

## **Ordering Information** 

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Device Package Shipping memo<br>2SB1122S-TD-E PCP 1,000pcs./reel<br>Pb Free<br>2SB1122T-TD-E PCP 1,000pcs./reel<br>IC  --  VCE IC  --  VBE<br>--1.0 --1200<br>VCE= --2V<br>--1000<br>--0.8<br>--800<br>--0.6<br>--600<br>--0.4<br>--400<br>--0.2<br>--200<br>IB=0mA<br>0 0<br>0 --1 --2 --3 --4 --5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2<br>Collector to Emitter Voltage, VCE  --  V ITR08877 Base to Emitter Voltage, VBE  --  V ITR08879<br>--1mA<br>--2mA<br>--4mA<br>--6mA<br>--8mA<br>--10mA<br>--12mA<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>--25<br>Collector Current, IC  --  A<br>Collector Current, IC  --  mA<br>**----- End of picture text -----**<br>


No.2040-2/4 

**2SB1122** 

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hFE  --  IC<br>1000<br>7 VCE= --2V<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>7<br>5<br>5 7 --10 2 3 5 7 --100 2 3 5 7--1000 2 3<br>Collector Current, IC  --  mA ITR08881<br>Cob  --  VCB<br>5<br>f=1MHz<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100<br>Collector to Base Voltage, VCB  --  V ITR08884<br>VBE(sat)  --  IC<br>--10<br>IC / IB=10<br>7<br>5<br>3<br>2<br>--1.0<br>7<br>5<br>3<br>2<br>5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2<br>Collector Current, IC  --  mA ITR08887<br>PC  --  Ta<br>1.4<br>1.3<br>1.2<br>1.0<br>0.8<br>0.6<br>0.5<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 160<br>°<br>Ambient Temperature, Ta --  C ITR08890<br>Ta= --25°C<br>--25°C<br>Ta=75°C<br>75°C<br>25°C<br>25°C<br>No heat sink<br>When mounted on ceramic substrate (250mm2✕<br>0.8mm)<br>DC Current Gain, hFE<br>Output Capacitance, Cob  --  pF<br>Base to Emitter Saturation Voltage, VBE(sat)  --  V<br>Collector Dissipation, PC  --  W<br>**----- End of picture text -----**<br>


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fT  --  IC<br>5<br>VCE= --10V<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>5 7 --10 2 3 5 7 --100 2 3 5<br>Collector Current, IC  --  mA ITR08883<br>VCE(sat)  --  IC<br>--1000<br>IC / IB=10<br>7<br>5<br>3<br>2<br>--100<br>7<br>5<br>3<br>2<br>--10<br>5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2<br>Collector Current, IC  --  mA ITR08885<br>S O A<br>3<br>ICP= --2A<br>2<br>IC= --1A<br>--1.0<br>7<br>5<br>3<br>2<br>--0.1<br>7<br>5<br>3<br>2 Ta=25°C  Single pulse<br>--0.01 When mounted on ceramic substrate (250mm [2] ✕0.8mm)<br>5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100<br>Collector to Emitter Voltage, VCE  --  V ITR08889<br>°C<br>--25<br>°C<br>Ta=75<br>°C<br>25<br>100ms<br>10ms<br>DC operation<br>1ms<br>Gain-Bandwidth Product, fT  --  MHz<br>Collector to Emitter  Saturation Voltage, VCE(sat)  --  mV<br>Collector Current, IC  --  A<br>**----- End of picture text -----**<br>


No.2040-3/4 

**2SB1122** 

## **Outline Drawing** 

## **Land Pattern Example** 

2SB1122S-TD-E, 2SB1122T-TD-E 

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Mass (g) Unit Unit: mm<br>0.058<br>* For reference [mm]<br>2.2<br>45°<br>45°<br>1.0<br>1.0 1.5<br>3.0<br>0.9<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br>


ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No.2040-4/4 



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