2SA2013-TD-E

Bipolar (BJT) Single Transistor, PNP, 50 V, 4 A, 3.5 W, SOT-89, Surface Mount

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:400MHz; Power Dissipation Pd:3.5W; DC Collector Current:-4A; DC Current Gain hFE:200hFE; Trans
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 3.5W
Transistor Mounting: Surface Mount
Transistor Polarity: PNP
Transition Frequency: 400MHz
Transistor Case Style: SOT-89
DC Current Gain hFE Min: 200hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 4A
Collector Emitter Voltage Max: 50V

Delivery and price
Units per pack	5000
Price	0.219 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 14, 2026