# Bipolar (BJT) Single Transistor, NPN, 45 V, 30 mA, 500 mW, TO-18, Through Hole

![Product image](https://novapart.co/image/farnell:1653598/)

**URL**: https://novapart.co/products/2N930A./bipolar-bjt-single-transistor-npn-45-v-30-ma-500
**SKU**: 2N930A.
**Manufacturer**: MULTICOMP PRO
**Price**: €0.6030
**Stock**: 10+

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:45MHz; Power Dissipation Pd:500mW; DC Collector Current:30mA; DC Current Gain hFE:60hFE; Transistor Case Style:

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 45MHz |
| Transistor Case Style | TO-18 |
| Dc Current Gain Hfe Min | 60hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 30mA |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1653598/)

## **Transistor** 

## **Description:** 

A Widely used “Industry Standard” silicon NPN transistor in a TO-18 type case designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies. 

## **Absolute Maximum Ratings:** 

Collector-Base Voltage, VCBO : 60V Collector-Emitter Voltage, VCEO : 60V Emitter-Base Voltage, VEBO : 6V Continuous Collector Current, IC : 30mA Total Device Dissipation (TA = +25°C), PD : 500mW Derate above 25°C     : >3.33mW/°C Total Device Dissipation (TC = +25°C), PD : 1.8W Derate above 25°C     : 12mW/°C Operating Junction Temperature Range, TJ : -65°C to +200°C Storage Temperature Range, Tstg : -65°C to +200°C 

## **Electrical Characteristics: (TA = +25°C unless otherwise specified)** 

|**Electrical Characteristics: (TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified) = +25°C unless otherwise specified)**|**Electrical Characteristics: (TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified) = +25°C unless otherwise specified)**|**Electrical Characteristics: (TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified) = +25°C unless otherwise specified)**|**Electrical Characteristics: (TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified) = +25°C unless otherwise specified)**||||
|---|---|---|---|---|---|---|
|**Parameter**<br>**Electrical Characteristics: (TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified) = +25°C unless otherwise specified)**<br>~~a~~||**Symbol**<br>**Test Conditions**<br>**Electrical Characteristics: (TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified) = +25°C unless otherwise specified)**<br>~~SO~~||**Min.**|**Max.**|**Unit**|
|**OFF Characteristics**|||||||
||Collector-Emitter Breakdown Voltage|V(br)ceo|Ic= 10mA, Ib= 0, Note 1|45|-||
||Collector-Base Breakdown Voltage|V(br)cbo|Ic= 10μA, Ie= 0|80|-|V|
||Emitter-Base Breakdown Voltage|V(br)ebo|Ie= 10μA, Ic= 0|6|-||
||Collector Cut-off Current|Icbo|Vcb= 45V, Ie= 0|-|2||
|||||||nA|
||Emitter Cut-Off Current|Iebo|Veb= 5V, Ic= 0|-|2||



Note 1. Pulse Test: Pulse Width <= 300μs, Duty Cycle <= 2%. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

Page <1> 16/09/19 V1.0 

## **Transistor** 

## **Electrical Characteristics: (TA = +25°C unless otherwise specified)** 

|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>**ON Characteristics**<br>~~a~~<br>~~GC~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>**ON Characteristics**<br>~~a~~<br>~~GC~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>**ON Characteristics**<br>~~a~~<br>~~GC~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>**ON Characteristics**<br>~~a~~<br>~~GC~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>**ON Characteristics**<br>~~a~~<br>~~GC~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>**ON Characteristics**<br>~~a~~<br>~~GC~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>**ON Characteristics**<br>~~a~~<br>~~GC~~|
|---|---|---|---|---|---|---|
||DC Current Gain|hFE|VCE= 5V, IC= 0.001mA, Note 1|60|-|-|
||||VCE= 5V, IC= 0.01mA|100|300|-|
||||Vce= 5V, Ic= 10mA, Note 1|-|600|-|
||Collector-Emitter Saturation Voltage|VCE(sat)|Ic= 10mA, Ib= 0.5mA, Note 1|-|0.5|V|
||Base-Emitter Saturation Voltage|VBE(sat)|IC= 10mA, IB= 0.5mA, Note 1|0.7|0.9||
|**Small-Signal Characteristics**|||||||
||Current Gain-Bandwidth Product|ft|Vce= 5V, Ic= 0.5mA, f = 30MHz,<br>Note 2|45|-|MHz|
||Output Capacitance|Cobo|Vcb= 5V, Ie= 0, f = 1MHz|-|6|pF|
||Noise Figure|NF|Vce= 5V, Ic= 10μA, f = 1kHz,<br>Rs = 10kΩ|-|3|dB|



Note 1. Pulse Test: Pulse Width <= 300μs, Duty Cycle <= 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. 

1. EMITTER 2. BASE 3. COLLECTOR 

|**Dim.**|**Min.**|**Max.**|
|---|---|---|
|A|5.24|5.84|
|B|4.52|4.97|
|C|4.31|5.33|
|D|0.4|0.53|
|E|-|0.76|
|F|-|1.27|
|G|-|2.97|
|H|0.91|1.17|
|J|0.71|1.21|
|K|12.7|-|
|L|45°|45°|



Dimensions : Millimetres 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Bipolar Transistor, NPN, 60V, TO-18|2N930A|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

16/09/19 V1.0 

Page <2> 



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- [Supplier page](https://es.farnell.com/multicomp-pro/2n930a/bipolar-transistor/dp/1653598)
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