2N7002NXBKR

## **2N7002NXBK** 

## **60 V, N-channel Trench MOSFET** 

## **25 July 2019** 

## **Product data sheet** 

## **1.  General description** 

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 

## **2.  Features and benefits** 

- Logic-level compatible 

- Very fast switching 

- Trench MOSFET technology 

- ElectroStatic Discharge (ESD) protection > 2 kV HBM 

## **3.  Applications** 

- Relay driver 

- High-speed line driver 

- Low-side load switch 

- Switching circuits 

## **4.  Quick reference data** 

**Table 1. Quick reference data** 

|**Symbol**<br>~~es~~|**Parameter**<br>~~esfe~~|**Conditions**<br>~~fe~~|~~fe~~|**Min**<br>~~fe~~|**Typ**<br>~~fe~~|**Max**<br>~~fe~~|**Unit**<br>~~fe~~|
|---|---|---|---|---|---|---|---|
|VDS<br>~~es~~<br>~~S~~|drain-source voltage<br>~~esfe~~<br>~~So}~~|Tj= 25 °C<br>~~fe~~<br>~~o}~~<br>~~res~~|~~fe~~<br>~~o}~~|-<br>~~fe~~|-<br>~~fe~~<br>~~+~~|60<br>~~fe~~<br>~~+~~|V<br>~~fe~~<br>~~—~~|
|VGS<br>~~S~~<br>~~ee~~|gate-source voltage<br>~~So}~~<br>~~ee res~~||~~o}~~<br>~~eee~~|-20<br>~~eee~~|-<br>~~+~~<br>~~eee~~|20<br>~~+~~<br>~~eee~~|V<br>~~—~~<br>~~eee~~|
|ID<br>~~S~~<br>~~ee~~|drain current<br>~~So}~~<br>~~ee res~~|VGS= 10 V; Tamb= 25 °C<br>~~o}~~<br>~~res~~|[1]<br>~~o}~~<br>~~eee~~|-<br>~~eee~~|-<br>~~+~~<br>~~eee~~|270<br>~~+ ~~<br>~~eee~~|mA<br> ~~—~~<br>~~eee~~|
|||VGS= 10 V; Tsp= 25 °C<br>~~res~~|~~eee~~|-<br>~~eee~~|-<br>~~eee~~|330<br>~~eee~~|mA<br>~~eee~~|
|**Static characteristics**<br>~~ee res eee eee~~<br>~~pT~~<br>~~ee~~||||||||
|RDSon<br>~~pT~~<br>~~a~~|drain-source on-state<br>resistance<br>~~pT~~<br>~~ee~~|VGS= 10 V; ID= 200 mA; Tj= 25 °C<br>~~pT~~<br>~~ee~~|~~pT~~<br>~~ee~~|-<br>~~pT~~<br>~~ee~~<br>~~ee~~|2.2<br>~~pT~~<br>~~ee~~<br>~~ee~~|2.8<br>~~pT~~<br>~~ee~~<br>~~ee~~|Ω<br>~~pT~~<br>~~ee~~<br>~~ee~~|



[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm[2] . 

**Nexperia** 

**2N7002NXBK** 

**60 V, N-channel Trench MOSFET** 

## **5.  Pinning information** 

**Table 2. Pinning information** 

|**Pin**|**Symbol**|**Description**|**Simplified outline**|**Graphic symbol**|**Graphic symbol**|
|---|---|---|---|---|---|
|1|G|gate|1<br>2<br>3<br>**SOT23**|G|_017aaa255_<br>D<br>S|
|2|S|source||||
|3|D|drain||||



## **6.  Ordering information** 

## **Table 3. Ordering information** 

|**Type number**|**Package**|||
|---|---|---|---|
||**Name**|**Description**|**Version**|
|2N7002NXBK|SOT23|plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9<br>mm x 1.3 mm x 1 mm body|SOT23|



## **7.  Marking** 

## **Table 4. Marking codes** 

|**Type number**|**Marking code[1]**|
|---|---|
|2N7002NXBK|%4R|



[1] % = placeholder for manufacturing site code 

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**Product data sheet** 

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**2N7002NXBK** 

**60 V, N-channel Trench MOSFET** 

## **8.  Limiting values** 

## **Table 5. Limiting values** 

_In accordance with the Absolute Maximum Rating System (IEC 60134)._ 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VDS|drain-source voltage|Tj= 25 °C||-|60|V|
|VGS|gate-source voltage|||-20|20|V|
|ID|drain current|VGS= 10 V; Tamb= 25 °C|[1]|-|270|mA|
|||VGS= 10 V; Tamb= 100 °C|[1]|-|170|mA|
|||VGS= 10 V; Tsp= 25 °C||-|330|mA|
|IDM|peak drain current|Tamb= 25 °C; single pulse; tp≤  10 µs||-|0.9|A|
|Ptot|total power dissipation|Tamb= 25 °C|[2]|-|310|mW|
||||[1]|-|400|mW|
|||Tsp= 25 °C||-|1670|mW|
|Tj|junction temperature|||-55|150|°C|
|Tamb|ambient temperature|||-55|150|°C|
|Tstg|storage temperature|||-65|150|°C|
|**Source-drain diode**|||||||
|IS|source current|Tamb= 25 °C|[1]|-|200|mA|



[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm[2] . [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 

**==> picture [497 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
017aaa123 017aaa124<br>120 120<br>Pder Ider<br>(%) (%)<br>80 80<br>40 40<br>0 0<br>- 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175<br>Tj (°C) Tj (°C)<br>Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a<br>function of junction temperature function of junction temperature<br>**----- End of picture text -----**<br>


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**Nexperia** 

**2N7002NXBK** 

## **60 V, N-channel Trench MOSFET** 

**==> picture [486 x 293] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-014126<br>1<br>(1)<br>Limit RDSon = VDS/ID<br>ID<br>(A)<br>10 [-1]<br>(2)<br>(3)<br>(4)<br>(5)<br>10 [-2]<br>(6)<br>10 [-3]<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>IDM = single pulse<br>(1) tp = 10 µs<br>(2) tp = 1 ms<br>(3) tp = 10 ms<br>(4) DC; Tsp = 25 °C<br>(5) tp = 100 ms<br>(6) DC; Tamb = 25 °C; drain mounting pad 1 cm [2]<br>Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-<br>source voltage<br>**----- End of picture text -----**<br>


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**Product data sheet** 

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**2N7002NXBK** 

**60 V, N-channel Trench MOSFET** 

## **9.  Thermal characteristics** 

**Table 6. Thermal characteristics** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Rth(j-a)|thermal resistance from<br>junction to ambient|in free air|[1]|-|350|405|K/W|
||||[2]|-|270|310|K/W|
|Rth(j-sp)|thermal resistance from<br>junction to solder point|||-|65|75|K/W|



- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm[2] . 

**==> picture [481 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-014128<br>10 [3]<br>duty cycle = 1<br>Zth(j-a)<br>(K/W) 0.75<br>0.50<br>0.33 0.25<br>10 [2] 0.20<br>0.10<br>0.05<br>0.02<br>0.01<br>0<br>10<br>10 [-3] 10 [-2] 10 [-1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>


FR4 PCB, standard footprint 

**Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** 

**==> picture [481 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-014129<br>10 [3]<br>Zth(j-a)<br>(K/W) duty cycle = 1<br>0.75<br>0.50<br>10 [2] 0.33 0.25<br>0.20<br>0.10<br>0.05<br>0.02<br>0.01<br>0<br>10<br>10 [-3] 10 [-2] 10 [-1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>


FR4 PCB, mounting pad for drain 1 cm[2] 

**Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** 

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**2N7002NXBK** 

**60 V, N-channel Trench MOSFET** 

## **10.  Characteristics** 

**Table 7. Characteristics** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static characteristics**||||||||
|V(BR)DSS|drain-source<br>breakdown voltage|ID= 250 µA; VGS= 0 V; Tj= 25 °C||60|-|-|V|
|VGSth|gate-source threshold<br>voltage|ID= 250 µA; VDS=VGS; Tj= 25 °C||1.1|1.6|2.1|V|
|IDSS|drain leakage current|VDS= 60 V; VGS= 0 V; Tj= 25 °C||-|-|1|µA|
|IGSS|gate leakage current|VGS= 20 V; VDS= 0 V; Tj= 25 °C||-|-|10|µA|
|||VGS= -20 V; VDS= 0 V; Tj= 25 °C||-|-|-10|µA|
|||VGS= 10 V; VDS= 0 V; Tj= 25 °C||-|-|1|µA|
|||VGS= -10 V; VDS= 0 V; Tj= 25 °C||-|-|-1|µA|
|||VGS= 5 V; VDS= 0 V; Tj= 25 °C||-|-|0.3|µA|
|||VGS= -5 V; VDS= 0 V; Tj= 25 °C||-|-|-0.3|µA|
|RDSon|drain-source on-state<br>resistance|VGS= 10 V; ID= 200 mA; Tj= 25 °C||-|2.2|2.8|Ω|
|||VGS= 10 V; ID= 100 mA; Tj= 150 °C||-|4.5|5.7|Ω|
|||VGS= 5 V; ID= 200 mA; Tj= 25 °C||-|2.5|3.2|Ω|
|gfs|forward<br>transconductance|VDS= 10 V; ID= 200 mA; Tj= 25 °C||-|600|-|mS|
|RG|gate resistance|f = 2.5 MHz||-|2.5|-|Ω|
|**Dynamic characteristics**||||||||
|QG(tot)|total gate charge|VDS= 30 V; ID= 200 mA; VGS= 10 V;<br>Tj= 25 °C||-|1|-|nC|
|QGS|gate-source charge|||-|0.12|-|nC|
|QGD|gate-drain charge|||-|0.18|-|nC|
|Ciss|input capacitance|VDS= 10 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C||-|23.6|-|pF|
|Coss|output capacitance|||-|4.6|-|pF|
|Crss|reverse transfer<br>capacitance|||-|3|-|pF|
|td(on)|turn-on delay time|VDS= 50 V; ID= 200 mA; VGS= 10 V;<br>RG(ext)= 6 Ω; Tj= 25 °C||-|4.7|-|ns|
|tr|rise time|||-|4.3|-|ns|
|td(off)|turn-off delay time|||-|6.9|-|ns|
|tf|fall time|||-|2.9|-|ns|
|**Source-drain diode**||||||||
|VSD|source-drain voltage|IS= 200 mA; VGS= 0 V; Tj= 25 °C||-|0.87|1.2|V|



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## **60 V, N-channel Trench MOSFET** 

**==> picture [497 x 524] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-014131 aaa-014132<br>1 10 [-3]<br>ID VGS = 10 V<br>(A) 4.5 V ID<br>0.8 3.5 V (A)<br>10 [-4]<br>0.6<br>(1) (2) (3)<br>3.0 V<br>0.4<br>10 [-5]<br>0.2<br>2.5 V<br>0 10 [-6]<br>0 1 2 3 4 5 0 1 2 3<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C; VDS = 5 V<br>(1) minimum values<br>Fig. 6. Output characteristics: drain current as a<br>(2) typical values<br>function of drain-source voltage; typical values<br>(3) maximum values<br>Fig. 7. Sub-threshold drain current as a function of<br>gate-source voltage<br>aaa-014133 aaa-014134<br>8 8<br>2.5 V 3.0 V 3.5 V<br>RDSon RDSon<br>(Ω) (Ω)<br>4.0 V<br>6 6<br>4.5 V<br>(1)<br>4 4<br>(2)<br>2 V GS  = 10 V 2<br>0 0<br>0 0.2 0.4 0.6 0.8 0 2 4 6 8 10<br>ID (A) VGS (V)<br>Tj = 25 °C ID = 0.2 A<br>Fig. 8. Drain-source on-state resistance as a function (1) Tj = 150 °C<br>of drain current; typical values (2) Tj = 25 °C<br>Fig. 9. Drain-source on-state resistance as a function<br>of gate-source voltage; typical values<br>**----- End of picture text -----**<br>


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## **60 V, N-channel Trench MOSFET** 

**==> picture [497 x 538] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-014135 aaa-014136<br>0.6 2.5<br>a<br>ID<br>(A) 2.0<br>0.4<br>1.5<br>(2)<br>1.0<br>0.2<br>0.5<br>(1)<br>0 0<br>0 1 2 3 4 5 -60 0 60 120 180<br>VGS (V) Tj (°C)<br>VDS > ID × RDSon<br>(1) Tj = 25 °C<br>(2) Tj = 150 °C<br>Fig. 11. Normalized drain-source on-state resistance<br>Fig. 10. Transfer characteristics: drain current as a<br>as a function of junction temperature; typical<br>function of gate-source voltage; typical values values<br>aaa-014137 aaa-014138<br>2.5 10 [2]<br>VGS(th)<br>(V) C<br>(1)<br>2.0 (pF) (1)<br>10<br>(2)<br>1.5<br>(2)<br>(3)<br>1.0 (3)<br>1<br>0.5<br>0 10 [-1]<br>-60 0 60 120 180 10 [-1] 1 10 10 [2]<br>Tj (°C) VDS (V)<br>ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V<br>(1) maximum values (1) Ciss<br>(2) typical values (2) Coss<br>(3) minimum values (3) Crss<br>Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances<br>junction temperature as a function of drain-source voltage; typical<br>values<br>**----- End of picture text -----**<br>


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## **60 V, N-channel Trench MOSFET** 

**==> picture [497 x 481] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-014139<br>10<br>VGS VDS<br>(V)<br>ID<br>8<br>VGS(pl)<br>6<br>VGS(th)<br>4 VGS<br>QGS2<br>QGS1<br>2 QGS QGD<br>QG(tot)<br>003aaa508<br>0 Fig. 15. Gate charge waveform definitions<br>0 0.2 0.4 0.6 0.8 1.0<br>QG (nC)<br>ID = 0.2 A; VDS = 30 V; Tamb = 25 °C<br>Fig. 14. Gate-source voltage as a function of gate<br>charge; typical values<br>aaa-014140<br>0.20<br>IS<br>(A)<br>0.15<br>(1)<br>0.10<br>0.05<br>(2)<br>0<br>0 0.4 0.8 1.2<br>VSD (V)<br>VGS = 0 V<br>(1) Tj = 150 °C<br>(2) Tj = 25 °C<br>Fig. 16. Source current as a function of source-drain voltage; typical values<br>**----- End of picture text -----**<br>


## **11.  Test information** 

**==> picture [121 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
P  duty cycle δ = t1<br>t2 t2<br>t1<br>t<br>006aaa812<br>**----- End of picture text -----**<br>


**Fig. 17. Duty cycle definition** 

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**Product data sheet** 

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**2N7002NXBK** 

**60 V, N-channel Trench MOSFET** 

## **12.  Package outline** 

**==> picture [481 x 572] intentionally omitted <==**

**----- Start of picture text -----**<br>
Plastic surface-mounted package; 3 leads SOT23<br>D B E A X<br>HE v A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>Dimensions (mm are the original dimensions)<br>Unit A A1 bp c D E e e1 HE Lp Q v w<br>max 1.1 0.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm nom 1.9 0.95 0.2 0.1<br>min 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>sot023_po<br>Outline References European Issue date<br>version IEC JEDEC JEITA projection<br>14-06-19<br>SOT23 TO-236AB<br>14-09-22<br>**----- End of picture text -----**<br>


**Fig. 18. Package outline SOT23** 

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**Product data sheet** 

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**2N7002NXBK** 

**60 V, N-channel Trench MOSFET** 

## **13.  Soldering** 

**==> picture [497 x 537] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.3<br>2.9<br>1.9<br>solder lands<br>solder resist<br>3 1.7 2<br>solder paste<br>0.7 0.6 occupied area<br>(3×) (3×)<br>Dimensions in mm<br>0.5<br>(3×)<br>0.6<br>(3×)<br>1 sot023_fr<br>Fig. 19. Reflow soldering footprint for SOT23<br>2.2<br>1.2<br>(2×)<br>1.4<br>(2×)<br>solder lands<br>4.6 2.6 solder resist<br>occupied area<br>Dimensions in mm<br>1.4<br>preferred transport direction during soldering<br>2.8<br>4.5 sot023_fw<br>Fig. 20. Wave soldering footprint for SOT23<br>**----- End of picture text -----**<br>


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**Product data sheet** 

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**60 V, N-channel Trench MOSFET** 

## **14.  Revision history** 

**Table 8. Revision history** 

|**Data sheet ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|---|---|---|---|---|
|2N7002NXBK v.2|20190725|Product data sheet|-|2N7002NXBK v.1|
|Modification|•<br>Corrected the package information from SOT89 to SOT23||||
|2N7002NXBK v.1|20190701|Product data sheet|-|-|



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## **60 V, N-channel Trench MOSFET** 

## **15.  Legal information** 

## **Data sheet status** 

|**Document status**<br>**[1][2]**|**Product**<br>**status[3]**|**Definition**|
|---|---|---|
|Objective [short]<br>data sheet|Development|This document contains data from<br>the objective specification for<br>product development.|
|Preliminary [short]<br>data sheet|Qualification|This document contains data from<br>the preliminary specification.|
|Product [short]<br>data sheet|Production|This document contains the product<br>specification.|



[1] Please consult the most recently issued document before initiating or completing a design. 

[2] The term 'short data sheet' is explained in section "Definitions". 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. 

## **Definitions** 

**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 

## **Disclaimers** 

**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. 

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injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 

Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. 

**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 

**Terms and conditions of commercial sale** — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. 

**No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

**Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 

**Non-automotive qualified products** — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. 

**Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 

## **Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

© Nexperia B.V. 2019. All rights reserved 

All information provided in this document is subject to legal disclaimers. 

2N7002NXBK 

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**Product data sheet** 

**Nexperia** 

**2N7002NXBK** 

**60 V, N-channel Trench MOSFET** 

## **Contents** 

**1.  General description......................................................1 2.  Features and benefits.................................................. 1 3.  Applications.................................................................. 1 4.  Quick reference data....................................................1 5.  Pinning information......................................................2 6.  Ordering information....................................................2 7.  Marking..........................................................................2 8.  Limiting values............................................................. 3 9.  Thermal characteristics............................................... 5 10.  Characteristics............................................................6 11.  Test information..........................................................9 12.  Package outline........................................................ 10 13.  Soldering................................................................... 11 14.  Revision history........................................................12 15.  Legal information......................................................13** 

## © **Nexperia B.V. 2019. All rights reserved** 

For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 25 July 2019** 

© Nexperia B.V. 2019. All rights reserved 

All information provided in this document is subject to legal disclaimers. 

2N7002NXBK **Product data sheet** 

**14 / 14** 

**25 July 2019**