# Power MOSFET, N Channel, 60 V, 380 mA, 1.6 ohm, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2317619RL/) **URL**: https://novapart.co/products/2N7002KT1G/power-mosfet-n-channel-60-v-380-ma-16-ohm-sot-23 **SKU**: 2N7002KT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.0460 **Stock**: 10+ **Lead Time**: 167 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:380mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 420mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOT-23 | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 380mA | | Drain Source On State Resistance | 1.6ohm | | Gate Source Threshold Voltage Max | 2.3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317619RL/) 2N7002K, 2V7002K ## Small Signal MOSFET **60 V, 380 mA, Single, N−Channel, SOT−23** ## **Features** - ESD Protected - Low RDS(on) ## **www.onsemi.com** - Surface Mount Package - 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |**V(BR)DSS**|**RDS(on) MAX**|**ID MAX**| |---|---|---| |60 V|1.6 @ 10 V|380 mA| ||2.5 @ 4.5 V|| ## **SIMPLIFIED SCHEMATIC** ## **Applications** - Low Side Load Switch **==> picture [131 x 101] intentionally omitted <==** **----- Start of picture text -----**
Gate 1
3 Drain
Source 2
(Top View)
**----- End of picture text -----**
- Level Shift Circuits - DC−DC Converter - Portable Applications i.e. DSC, PDA, Cell Phone, etc. ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|C unless otherwise stated)|C unless otherwise stated)|| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage|VDSS|60|V| |Gate−to−Source Voltage|VGS|±20|V| |Drain Current (Note 1)
Steady State 1 sq in Pad
TA= 25°C
TA= 85°C
~~eee~~|ID
~~eee~~|380
270
~~eee~~|mA
~~eee~~| |Drain Current (Note 2)
Steady State Minimum Pad
TA= 25°C
TA= 85°C
~~or~~|ID
~~or~~|320
230
~~or~~|mA
~~or~~| |Power Dissipation
Steady State 1 sq in Pad
Steady State Minimum Pad|PD|420
300|mW| |Pulsed Drain Current (tp= 10 s)
|IDM
|5.0
~~e~~|A
~~e~~| |Operating Junction and Storage
Temperature Range
~~SS~~|TJ, TSTG
~~SS~~|−55 to
+150
~~SSe~~|°C
~~SSe~~| |Source Current (Body Diode)
~~SS~~|IS
~~SS~~|300
~~SSe~~
~~ee~~|mA
~~SSe~~
~~ee~~| |Lead Temperature for Soldering Purposes
(1/8″from case for 10 s)

~~ee~~|TL

~~ee~~
~~ee~~|260
~~e~~
~~ee~~
~~ee~~
~~eee~~|°C
~~e~~
~~ee~~
~~ee~~
~~eee~~| |Gate−Source ESD Rating
(HBM, Method 3015)
~~ee~~|ESD
~~ee~~
~~ee~~|2000
~~ee~~
~~ee~~
~~eee~~|V
~~ee~~
~~ee~~
~~eee~~| **==> picture [172 x 195] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM
3 & PIN ASSIGNMENT
Drain
3
1
2
704 M
SOT−23
CASE 318
STYLE 21 1 2
Gate Source
704 = Specific Device Code*
M = Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
**----- End of picture text -----**
## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |2N7002KT1G|SOT−23
(Pb−Free)|3000 / Tape & Reel| |2V7002KT1G|SOT−23
(Pb−Free)|3000 / Tape & Reel| 1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2007 **October, 2016 − Rev. 15** **2N7002K/D** **2N7002K, 2V7002K** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Junction−to−Ambient − Steady State (Note 3)|R�JA|300|°C/W| |Junction−to−Ambient − t≤5 s (Note 3)||92|| |Junction−to−Ambient − Steady State (Note 4)||417|| |Junction−to−Ambient − t≤5 s (Note 4)||154|| 3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERIST**|**ICS**(TJ= 25°C un|less otherwise specified)|less otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V,|ID= 250�A|60|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||71||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 60 V|TJ= 25°C|||1|�A| ||||TJ= 125°C|||10|| |||VGS= 0 V,
VDS= 50 V|TJ= 25°C|||100|nA| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±10|�A| |||VDS= 0 V, VGS=±10 V||||450|nA| |||VDS= 0 V, VGS=±5.0 V||||150|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.0||2.3|V| |Negative Threshold Temperature
Coefficient|VGS(TH)/TJ||||4.0||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 500 mA|||1.19|1.6|�| |||VGS= 4.5 V, ID= 200 mA|||1.33|2.5|| |Forward Transconductance|gFS|VDS= 5 V, ID= 200 mA|||530||mS| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,
VDS= 20 V|||24.5|45|pF| |Output Capacitance|COSS||||4.2|8.0|| |Reverse Transfer Capacitance|CRSS||||2.2|5.0|| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 10 V;
ID= 200 mA|||0.7||nC| |Threshold Gate Charge|QG(TH)||||0.1||| |Gate−to−Source Charge|QGS||||0.3||| |Gate−to−Drain Charge|QGD||||0.1||| |**SWITCHING CHARACTERISTICS, VGS**|**= V**(Note 6)||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDD= 25 V,
ID= 500 mA, RG= 25�|||12.2||ns| |Rise Time|tr||||9.0||| |Turn−Off Delay Time|td(OFF)||||55.8||| |Fall Time|tf||||29||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 200 mA|TJ= 25°C||0.8|1.2|V| ||||TJ= 85°C||0.7||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures **www.onsemi.com** **2** **2N7002K, 2V7002K** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 619] intentionally omitted <==** **----- Start of picture text -----**
1.6 1.2
VGS = 10 V 5.0 V
4.5 V
9.0 V
8.0 V 4.0 V
1.2
7.0 V
6.0 V 0.8
3.5 V
0.8
TJ = 25 ° C
3.0 V 0.4
0.4
2.5 V
TJ = 125 ° C TJ = −55 ° C
0 0
0 2 4 6 0 2 4 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
3.2 3.2
VGS = 4.5 V VGS = 10 V
2.8 TJ = 125 ° C 2.8
2.4 TJ = 85 ° C 2.4 TJ = 125 ° C
2.0 TJ = 25 ° C 2.0 TJ = 85 ° C
1.6 1.6 °
TJ = −55 ° C TJ = 25 C
1.2 1.2
TJ = −55 ° C
0.8 0.8
0.4 0.4
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and
Temperature Temperature
2.4 2.2
ID = 0.2 A
2.0 ID = 500 mA
1.8
VGS = 4.5 V
1.6
VGS = 10 V
1.4
1.2 ID = 200 mA
1.0
0.8
0.4 0.6
2 4 6 8 10 −50 −25 0 25 50 75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)
Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with
Voltage Temperature
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
) �
, DRAIN−TO−SOURCE
DS(on)
R RESISTANCE (NORMALIZED)
, DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R
**----- End of picture text -----**
**www.onsemi.com** **3** **2N7002K, 2V7002K** ## **TYPICAL CHARACTERISTICS** **==> picture [240 x 383] intentionally omitted <==** **----- Start of picture text -----**
30
Ciss
20
TJ = 25 ° C
VGS = 0 V
Coss
10
Crss
0
0 4 8 12 16 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
10
VGS = 0 V
1
TJ = 85 ° C TJ = 25 ° C
0.1
0.01
0.4 0.6 0.8 1.0 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
C, CAPACITANCE (pF)
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) **Figure 9. Diode Forward Voltage vs. Current** **==> picture [236 x 156] intentionally omitted <==** **----- Start of picture text -----**
5
TJ = 25 ° C
4 ID = 0.2 A
3
2
1
0
0 0.2 0.4 0.6 0.8
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
Qg, TOTAL GATE CHARGE (nC) **Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [242 x 175] intentionally omitted <==** **----- Start of picture text -----**
2.5
2.4 ID = 250 � A
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( ° C)
, THRESHOLD VOLTAGE (V)
GS(TH)
V
**----- End of picture text -----**
**Figure 10. Threshold Voltage with Temperature** **www.onsemi.com** **4** **2N7002K, 2V7002K** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 376] intentionally omitted <==** **----- Start of picture text -----**
1000
Duty Cycle = 0.5
100 0.2
0.1
0.05
10 0.02
0.01
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 11. Thermal Response − 1 sq in pad
1000
Duty Cycle = 0.5
0.2
100
0.1
0.05
0.02
10
0.01
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
C/W) EFFECTIVE TRANSIENT
( ° THERMAL RESISTANCE
JC(t)
�
R
C/W) EFFECTIVE TRANSIENT
( ° THERMAL RESISTANCE
JC(t)
�
R
**----- End of picture text -----**
**Figure 12. Thermal Response − minimum pad** **www.onsemi.com** **5** **2N7002K, 2V7002K** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [463 x 328] intentionally omitted <==** **----- Start of picture text -----**
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
o E eat [|] HE T = 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
T 0 ° −−− 10 ° 0 ° −−− 10 °
a A1 SIDE VIEW SEE VIEW C c STYLE 21:
END VIEW PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90 r o 0.90
LO \ ct
3X 0.80 | LL 0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
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