# Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1858936RL/)

**URL**: https://novapart.co/products/2N7002K-T1-GE3/power-mosfet-n-channel-60-v-190-ma-2-ohm-sot-23
**SKU**: 2N7002K-T1-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0660
**Stock**: 1000+
**Lead Time**: 83 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 190mA |
| Drain Source On State Resistance | 2ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1858936RL/)

**2N7002K** 

~~—~~ www.vishay.com 

Vishay Siliconix 

## **N-Channel 60 V (D-S) MOSFET** 

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SOT-23 (TO-236)<br>D<br>3<br>ea<br>2<br>S<br>1<br>G<br>Top View<br>**----- End of picture text -----**<br>


## **Marking code:** 7K 

## **PRODUCT SUMMARY** 

|VDS(V)|60|
|---|---|
|RDS(on)max. () at VGS= 10 V|2|
|Qgtyp. (nC)<br>ID(A)<br>Configuration|0.4<br>0.3<br>Single|



## **FEATURES** 

- Low on-resistance: 2  

- Low threshold: 2 V (typ.) 

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Available<br>RoHS"<br>Available<br>Available<br>**----- End of picture text -----**<br>


- Low input capacitance: 25 pF 

- Fast switching speed: 25 ns 

- Low input and output leakage 

- TrenchFET[®] power MOSFET 

- 2000 V ESD protection 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **Note** 

- This    datasheet    provides    information    about    parts    that    are RoHS-compliant and / or parts that are non RoHS-compliant.  For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details 

## **BENEFITS** 

- Low offset voltage 

- Low voltage operation 

- Easily driven without buffer 

- High speed circuits 

- Low error voltage 

## **APPLICATIONS** 

D 

- Direct logic-level interface: TTL/CMOS 

- Drivers: 

relays, solenoids, lamps, hammers, display, memories, transistors, etc. 

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G<br>**----- End of picture text -----**<br>


- Battery operated systems 

- Solid state relays 

S N-Channel MOSFET 

## **ORDERING INFORMATION** 

|Package|SOT-23|
|---|---|
|Lead (Pb)-free|2N7002K-T1-E3|
|Lead (Pb)-free and halogen-free|2N7002K-T1-GE3|



## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) 

|**ABSOLUTE MAXIMUM RATINGS**(TA = 25 °C, unless otherwise noted)TA = 25 °C, unless otherwise noted)A = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted))|**ABSOLUTE MAXIMUM RATINGS**(TA = 25 °C, unless otherwise noted)TA = 25 °C, unless otherwise noted)A = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted))|**ABSOLUTE MAXIMUM RATINGS**(TA = 25 °C, unless otherwise noted)TA = 25 °C, unless otherwise noted)A = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted))|**ABSOLUTE MAXIMUM RATINGS**(TA = 25 °C, unless otherwise noted)TA = 25 °C, unless otherwise noted)A = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted))|**ABSOLUTE MAXIMUM RATINGS**(TA = 25 °C, unless otherwise noted)TA = 25 °C, unless otherwise noted)A = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted))|
|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**LIMIT**|**UNIT**|
|Drain-source voltage||VDS|60|V|
|Gate-source voltage||VGS|± 20||
|Continuous drain current (TJ= 150 °C)b|TA= 25 °C|ID|0.3|A|
||TA= 100 °C||0.19||
|Pulsed drain currenta||IDM|0.8||
|Power dissipationb|TA= 25 °C|PD|0.35|W|
||TA= 100 °C||0.14||
|Maximum junction-to-ambientb||RthJA|350|°C/W|
|Operatingjunction and storage temperature range||TJ, Tstg|-55 to +150|°C|



## **Notes** 

a. Pulse width limited by maximum junction temperature b. Surface mounted on FR4 board 

S17-1299-Rev. F, 21-Aug-17 

Document Number: 71333 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**2N7002K** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

|**SPECIFICATIONS**(TA= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TA= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TA= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.a**|**MAX.**|**UNIT**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 10 μA|60|-|-|V|
|Gate-threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|1|-|2.5||
|Gate-body leakage|IGSS|VDS= 0 V, VGS= ± 20 V|-|-|± 10|μA|
|||VDS= 0 V, VGS= ± 15 V|-|-|1||
|||VDS= 0 V, VGS= ± 10 V|-|-|± 150|nA|
|||VDS= 0 V, VGS= ± 10 V, TJ= 85 °C|-|-|± 1000||
|||VDS= 0 V, VGS= ± 5 V|-|-|± 100||
|Zero gate voltage drain current|IDSS|VDS= 60 V, VGS= 0 V|-|-|1|μA|
|||VDS= 60 V, VGS= 0 V, TJ= 125 °C|-|-|500||
|On-state drain currentb|ID(on)|VGS= 10 V, VDS= 7.5 V|800|-|-|mA|
|||VGS= 4.5 V, VDS= 10 V|500|-|-||
|Drain-source on-resistanceb|RDS(on)|VGS= 10 V, ID= 500 mA|-|-|2||
|||VGS= 4.5 V, ID= 200 mA|-|-|4||
|Forward transconductanceb|gfs|VDS= 10 V, ID= 200 mA|100|-|-|mS|
|Diode forward voltage|VSD|IS= 200 mA, VGS= 0 V|-|-|1.3|V|
|**Dynamica, b**|||||||
|Total gate charge|Qg|VDS= 10 V, VGS= 4.5 V<br>ID 250 mA|-|0.4|0.6|nC|
|Input capacitance|Ciss|VDS= 25 V, VGS= 0 V<br>f = 1 MHz|-|30|-|pF|
|Output capacitance|Coss||-|6|-||
|Reverse transfer capacitance|Crss||-|2.5|-||
|**Switchinga, c**|||||||
|Turn-on time|td(on)|VDD= 30 V, RL= 150<br>ID 200 mA, VGEN= 10 V, Rg= 10|-|-|25|ns|
|Turn-off time|td(off)||-|-|35||



## **Notes** 

a. For DESIGN AID ONLY, not subject to production testing 

b. Pulse test: pulse width  300 μs duty cycle  2 % 

c. Switching time is essentially independent of operating temperature 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S17-1299-Rev. F, 21-Aug-17 

Document Number: 71333 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**2N7002K** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1.0<br>7 V<br>6 V<br>VGS = 10 V<br>0.8  5 V<br>0.6<br>0.4  4 V<br>0.2<br>3 V<br>0.0<br>0 1 2  3 4 5<br>VDS - Drain-to-Source Voltage (V)<br>- Drain Current (A)<br>I D<br>**----- End of picture text -----**<br>


**Output Characteristics** 

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**----- Start of picture text -----**<br>
1200<br>T J  = - 55 °C<br>900<br>25 °C<br>125 °C<br>600<br>300<br>0<br>0 1 2 3 4 5 6<br>VGS  - Gate-to-Source Voltage (V)<br>- Drain Current (mA)<br>I D<br>**----- End of picture text -----**<br>


**Transfer Characteristics** 

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**----- Start of picture text -----**<br>
4.0<br>3.5<br>3.0<br>2.5<br>2.0  V  GS  = 4.5 V<br>1.5  V GS  = 10 V<br>1.0<br>0.5<br>0.0<br>0 200 400 600 800 1000<br>ID - Drain Current (mA)<br>) <br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Drain Current** 

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7<br>6 V DS  = 10 V<br>ID = 250 mA<br>5<br>4<br>3<br>2<br>1<br>0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>Qg - Total Gate Charge (nC)<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Gate Charge** 

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40<br>VGS = 0 V<br>32<br>24 Ciss<br>16<br>Coss<br>8<br>Crss<br>0<br>0 5 10 15 20 25<br>VDS  - Drain-to-Source Voltage (V)<br>Capacitance<br>2.0<br>V GS  = 10 V at 500 mA<br>1.6<br>1.2  V  GS   = 4.5 V<br>at 200 mA<br>0.8<br>0.4<br>0.0<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>C - Capacitance (pF)<br>(Normalized)<br>- On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

Document Number: 71333 

S17-1299-Rev. F, 21-Aug-17 

**3** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**2N7002K** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
1000<br>V  GS   = 0 V<br>100<br>T J  = 125 °C<br>10 TJ = 25 °C<br>T J  = - 55 °C<br>1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source-to-Drain Voltage (V)<br>- Source Current (A)<br>I S<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward Voltage** 

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5<br>4<br>3<br>ID = 200 mA ID = 500 mA<br>2<br>1<br>0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>) <br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-Source Voltage** 

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0.4  3<br>0.2  2.5<br>I D  = 250 µA<br>  0.0  2<br>- 0.2  1.5<br>- 0.4  1<br>T A  = 25 °C<br>- 0.6  0.5<br>- 0.8  0<br>- 50  - 25  0  2 5  5 0  7 5  100  125  150  0.01  0.1  1  10  100  600<br>TJ - Junction Temperature (°C) Time (s)<br>Variance (V)<br>Power  (W)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


**Threshold Voltage Variance Over Temperature** 

**Single Pulse Power, Junction-to-Ambient** 

S17-1299-Rev. F, 21-Aug-17 

Document Number: 71333 

**4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**2N7002K** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1  P DM<br>0.05<br>t  1<br>0.02 t 2  t 1<br>1. Duty Cycle, D =  t 2<br>2. Per Unit Base = R th JA  = 350 °C/W<br>3. T JM  - TA = PDMZthJA [(t)]<br>Single Pulse  4. Surface Mounted<br>0.01<br>10 -4  10  [-3 ] 10  [-2 ] 10  [-1 ] 1  1 0  100  600<br>Square Wave Pulse Duration (s)<br> Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10  [-4 ] 10  [-3 ] 10  [-2 ] 10  [-1 ] 1  10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Normalized Thermal Transient Impedance, Junction-to-Foot** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71333._ 

S17-1299-Rev. F, 21-Aug-17 

Document Number: 71333 

**5** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [59 x 49] intentionally omitted <==**

## **Package Information** 

## Vishay Siliconix 

## **SOT-23 (TO-236): 3-LEAD** 

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**----- Start of picture text -----**<br>
b<br>3<br>E1 E<br>1 2<br>S e<br>e1<br>D<br>0.10 mm<br>C<br>0.004" C 0.25 mm<br>A A2 q<br>Gauge Plane<br>Seating Plane Seating Plane<br>A1 C L<br>L1<br>**----- End of picture text -----**<br>


|**Dim**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
||**Min**|**Max**|**Min**|**Max**|
|**A**|0.89|1.12|0.035|0.044|
|**A1**|0.01|0.10|0.0004|0.004|
|**A2**|0.88|1.02|0.0346|0.040|
|**b**|0.35|0.50|0.014|0.020|
|**c**|0.085|0.18|0.003|0.007|
|**D**|2.80|3.04|0.110|0.120|
|**E**|2.10|2.64|0.083|0.104|
|**E1**|1.20|1.40|0.047|0.055|
|**e**|0.95 BSC||0.0374 Ref||
|**e1**|1.90 BSC||0.0748 Ref||
|**L**|0.40|0.60|0.016|0.024|
|**L1**|0.64 Ref||0.025 Ref||
|**S**|0.50 Ref||0.020 Ref||
|**q**|3°|8°|3°|8°|
|ECN: S-03946-Rev. K, 09-Jul-01<br>DWG: 5479|||||



Document Number: 71196 09-Jul-01 

www.vishay.com 

1 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR SOT-23** 

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**----- Start of picture text -----**<br>
0.037 0.022<br>(0.950) (0.559)<br>0.053<br>(1.341)<br>0.097<br>(2.459)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.106 (2.692) 0.049 (1.245)<br>0.029 (0.724)<br>**----- End of picture text -----**<br>


> Return to Index Return to Index 

Document Number: 72609 Revision: 21-Jan-08 

www.vishay.com 25 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/2N7002K-T1-GE3/power-mosfet-n-channel-60-v-190-ma-2-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/2n7002k-t1-ge3/mosfet-n-ch-60v-0-3a-diode-sot23/dp/1858936RL)
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